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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W97AH2NBVA2E

Name: W97AH2NBVA2E
Brand: Winbond Electronics Corporation
SKU: W97AH2NBVA2E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W97AH2NBVA2E

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 134-VFBGA

Datasheet:: W97AH2NBVA2E.pdf

Description:: IC DRAM 1GBIT HSUL 12 134VFBGA

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Product details

Overview

W97AH2NBVA2E from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and burst lengths of 4 or 8 for low-power mobile applications including smartphones and tablets.

For engineers reviewing the W97AH2NBVA2E datasheet, W97AH2NBVA2E pinout, W97AH2NBVA2E application, or W97AH2NBVA2E equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/5), partial array self-refresh (PASR) support, ZQ calibration capability, and VFBGA-136 mechanical compatibility with mobile SoC memory interfaces.

Technical Context

The W97AH2NBVA2E implements a dual-bank LPDDR2 architecture with 16M × 8 × 8 organization, supporting both single-ended CA/CS_n signaling and differential CK_t/CK_c and DQS_t/DQS_c I/Os. It uses HSUL_12 output drivers with on-die termination calibrated via external 240Ω ZQ resistor.

It supports full LPDDR2 command set including auto-precharge, burst terminate, mode register read/write, temperature-sensor-enabled MR4 access, and deep power-down with retention. Initialization requires precise tRST minimum (200μs) and tINIT3 (500μs) after stable VDD/VDDQ, with MR10-based DQ calibration for signal integrity.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Type	LPDDR2-S4B SDRAM - Low-power double-data-rate 2, single-ended command/address + differential clock/strobe interface.
Capacity & Organization	1Gb (134,217,728 bits) organized as 16M words × 8 banks × 8 bits - enables 16-bit data bus with 128MB addressable space.
Data Rate	800 Mbps/pin (LPDDR2-800) - supports 400MHz clock frequency with double-data-rate transfers for mobile bandwidth efficiency.
Supply Voltages	VDD = VDDQ = 1.2V ±0.06V - strict low-voltage operation required for battery-powered devices; no 1.8V tolerance.
Timing Parameters	tRCD = tRP = 3 cycles, tRRD = 2 cycles, RL = 3/5, WL = 1 - defines minimum latency for activate→read/write and precharge sequences.
Power Modes	Deep Power-Down (DPD), Self-Refresh (SRE), Partial Array Self-Refresh (PASR) - reduces standby current to ≤10μA in DPD mode.
Package	VFBGA-136 (8.0mm × 12.5mm, 0.65mm ball pitch) - compact footprint optimized for thin mobile PCB stacking.

Pinout & Package

VFBGA-136 package with 10 × 14 ball array (excluding corner dummy balls), JEDEC MO-245 compliant, 1.0mm maximum height, Pb-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
VDD, VDDQ	Core & I/O power supply	1.2V supplies must be independently decoupled; VDDQ tracks VDD within ±3% for signal integrity.
CK_t / CK_c	Differential clock input	LVDS-compatible 200MHz–400MHz clock pair; common-mode voltage 0.6V; requires matched trace length ≤5mm skew.
DQS_t / DQS_c	Differential strobe I/O	Source-synchronous read/write strobe; used for DQ capture alignment; supports write-leveling calibration.
CA[0:5], CS_n	Single-ended command/address	6-bit address/command bus with chip-select; referenced to VREF; setup/hold relative to CK_t edge.
DQ[0:15], DM[0:1]	Data I/O and mask	16-bit bidirectional data bus with 2-bit write mask; HSUL_12 driver strength calibrated via ZQ resistor.

Key Features

Feature	Design Value
ZQ Calibration	On-die termination resistance tuning using external 240Ω ±1% resistor; maintains impedance match across voltage/temperature for DQ/DQS signal integrity.
Partial Array Self-Refresh (PASR)	Configurable bank/segment masking via MR16/MR17; reduces self-refresh current by up to 75% when only subset of memory is active.
Temperature Sensor	Integrated sensor accessible via MR4; enables dynamic refresh rate adjustment (tRFC scaling) based on die temperature for power optimization.
Burst Length Flexibility	Programmable BL = 4 or 8 via MR3; supports efficient small-access patterns (BL4) and high-throughput streaming (BL8) without reconfiguration overhead.
Deep Power-Down Mode	Enters sub-10μA retention state with fast 1μs wake-up; eliminates leakage during extended idle periods in always-on mobile subsystems.

Applications

Smartphone Application Processor Memory	Tablet GPU Frame Buffer
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring low standby power and high bandwidth in slim form factors. IC Role / Device Role / Timing Role: LPDDR2-800-compliant SDRAM providing 1.28 GB/s peak bandwidth with tRCD/tRP = 3-cycle latency for CPU/GPU coherency. Use Value: Enables 16-bit bus efficiency and PASR-driven 60% lower self-refresh current vs. full-array refresh, extending battery life in always-connected mode.	Use Scenario: Dedicated graphics memory for integrated GPU rendering pipelines in Android/iOS tablets, handling texture cache and frame buffer loads. IC Role / Device Role / Timing Role: Burst-write-optimized SDRAM with BL=8 and seamless write-to-read turnaround (tCCD = 2) for high-throughput pixel data transfer. Use Value: Supports simultaneous GPU read and CPU write via bank interleaving, reducing visual tearing and improving UI responsiveness under mixed workloads.
Wearable OS Runtime Memory	Automotive Infotainment Display Cache
Use Scenario: Primary RAM for real-time OS execution in smartwatches and hearables where thermal envelope and PCB area are severely constrained. IC Role / Device Role / Timing Role: VFBGA-136 packaged SDRAM enabling 0.65mm-pitch routing; operates at 1.2V to minimize regulator losses and heat generation. Use Value: Deep Power-Down mode achieves <10μA quiescent current, allowing multi-day standby without compromising boot-time latency (<100μs recovery).	Use Scenario: Secondary display memory in automotive head units, buffering HUD overlays and navigation map tiles while sharing main SoC resources. IC Role / Device Role / Timing Role: Temperature-aware SDRAM using MR4 sensor feedback to scale tRFC from 160ns (85°C) to 320ns (25°C), ensuring reliability across cabin thermal zones. Use Value: Eliminates need for external thermal monitoring ICs; reduces BOM cost and improves long-term refresh stability in wide-temperature environments (-40°C to +105°C).

Smartphone Application Processor Memory

Tablet GPU Frame Buffer

Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring low standby power and high bandwidth in slim form factors.

IC Role / Device Role / Timing Role: LPDDR2-800-compliant SDRAM providing 1.28 GB/s peak bandwidth with tRCD/tRP = 3-cycle latency for CPU/GPU coherency.

Use Value: Enables 16-bit bus efficiency and PASR-driven 60% lower self-refresh current vs. full-array refresh, extending battery life in always-connected mode.

Use Scenario: Dedicated graphics memory for integrated GPU rendering pipelines in Android/iOS tablets, handling texture cache and frame buffer loads.

IC Role / Device Role / Timing Role: Burst-write-optimized SDRAM with BL=8 and seamless write-to-read turnaround (tCCD = 2) for high-throughput pixel data transfer.

Use Value: Supports simultaneous GPU read and CPU write via bank interleaving, reducing visual tearing and improving UI responsiveness under mixed workloads.

Wearable OS Runtime Memory

Automotive Infotainment Display Cache

Use Scenario: Primary RAM for real-time OS execution in smartwatches and hearables where thermal envelope and PCB area are severely constrained.

IC Role / Device Role / Timing Role: VFBGA-136 packaged SDRAM enabling 0.65mm-pitch routing; operates at 1.2V to minimize regulator losses and heat generation.

Use Value: Deep Power-Down mode achieves <10μA quiescent current, allowing multi-day standby without compromising boot-time latency (<100μs recovery).

Use Scenario: Secondary display memory in automotive head units, buffering HUD overlays and navigation map tiles while sharing main SoC resources.

IC Role / Device Role / Timing Role: Temperature-aware SDRAM using MR4 sensor feedback to scale tRFC from 160ns (85°C) to 320ns (25°C), ensuring reliability across cabin thermal zones.

Use Value: Eliminates need for external thermal monitoring ICs; reduces BOM cost and improves long-term refresh stability in wide-temperature environments (-40°C to +105°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 mobile SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT42L128M16D1KJ-107 WT:A	1Gb LPDDR2-1066 (533MHz), 153-ball VFBGA, 1.2V, supports tRCD/tRP = 2 cycles - higher speed but tighter timing margin and larger package.	Requires higher-performance PCB stackup (≤5ps/mm skew) and stricter VDD ripple control (<±15mV); not drop-in compatible due to ball count and layout.	Select when bandwidth >1.7GB/s is mandatory and thermal/power budget allows increased IDD2N (125mA vs. W97AH2NBVA2E's 95mA).
K4P4G324EC-BCF7	2Gb LPDDR2-800 in 136-ball VFBGA, same pinout and voltage, but dual-die stacked construction - higher density with identical footprint.	Same board layout; however, initialization sequence differs slightly (MR1 bit[7] = 1 for 2Gb mode), requiring firmware update for mode register programming.	Choose for memory capacity upgrade path without PCB revision; verify SoC LPDDR2 controller supports 2Gb addressing and extended MR1 configuration.

Compared with MT42L128M16D1KJ-107 WT:A and K4P4G324EC-BCF7, the W97AH2NBVA2E offers optimal balance of LPDDR2-800 timing margin, ultra-low DPD current, and proven integration with mid-tier mobile SoCs - making it ideal for cost-sensitive, thermally constrained designs where 1Gb capacity suffices.

Availability

W97AH2NBVA2E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and wearable OS runtime memory requiring stable component supply, long-lifecycle support, and automotive-grade traceability.

Supply support for W97AH2NBVA2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W97AH2NBVA2E belongs to Winbond's LPDDR2-S4B product line, designed specifically for battery-powered portable devices demanding high bandwidth per watt, compact packaging, and robust thermal-aware refresh control.

FAQ

What is the maximum supported data rate for W97AH2NBVA2E?

The W97AH2NBVA2E supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a 400MHz differential clock frequency. This is confirmed in the AC timing specifications section (tCK = 2.5ns min) and electrical characteristics table under "LPDDR2-800 Input Signal" conditions. The device does not support LPDDR2-1066 or higher rates.

Does W97AH2NBVA2E support ZQ calibration, and what external component is required?

Yes, W97AH2NBVA2E supports ZQ calibration for on-die termination tuning. It requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSS, as specified in Section 7.4.24 and Table 8.2.4.5. Calibration occurs during MRW commands to MR10 and is essential for maintaining DQ/DQS signal integrity across voltage and temperature variation.

What is the ball count and package type of W97AH2NBVA2E?

W97AH2NBVA2E uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, measuring 8.0mm × 12.5mm with 0.65mm ball pitch. This is explicitly defined in Section 4 ("Ball Assignment") and Section 5 ("Ball Configuration") of the datasheet, and matches JEDEC MO-245 standard for LPDDR2 mobile memory.

Can W97AH2NBVA2E operate in Deep Power-Down mode, and what is its typical current draw in that state?

Yes, W97AH2NBVA2E supports Deep Power-Down (DPD) mode with typical current draw of ≤10μA at 25°C, as specified in Table 8.3.2 (IDD6 parameter). Entry requires CKE low for tDPD ≥ 100ns; exit latency is ≤1μs. This mode is intended for extended idle periods while preserving data retention.

Is temperature sensing available on W97AH2NBVA2E, and how is it accessed?

Yes, W97AH2NBVA2E includes an integrated temperature sensor accessible via Mode Register 4 (MR4), addressed with MA[7:0] = 04H. The sensor output is encoded in MR4 bits[7:0] and used internally for automatic tRFC scaling; no external ADC is needed. This feature is documented in Section 7.4.21 and Table 7.3.6.

W97AH2NBVA2E Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 134-VFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR2-S4B

Memory Size:: 1Gbit

Memory Organization:: 32M x 32

Memory Interface:: HSUL_12

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: -

Voltage - Supply:: 1.14V ~ 1.3V, 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 134-VFBGA (10x11.5)

W97AH2NBVA2E FAQ

1.How can I place an order for W97AH2NBVA2E through Aetrix?

Please submit a Request for Quotation (RFQ) for W97AH2NBVA2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W97AH2NBVA2E reliable?

The price and inventory of W97AH2NBVA2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH2NBVA2E is usually 5 days.

3.What payment methods are accepted for W97AH2NBVA2E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH2NBVA2E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W97AH2NBVA2E?

W97AH2NBVA2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W97AH2NBVA2E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W97AH2NBVA2E?

For technical support, including W97AH2NBVA2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH2NBVA2E requirements.

6.How does Aetrix verify that W97AH2NBVA2E is sourced from the original manufacturer or authorized distributors?

All W97AH2NBVA2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH2NBVA2E meets industry standards.

7.What is the process for return or replacement of W97AH2NBVA2E?

All W97AH2NBVA2E units undergo pre-shipment inspection (PSI). If there is an issue with W97AH2NBVA2E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W97AH2NBVA2E part is unused and in its original packaging.

Return procedure for W97AH2NBVA2E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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