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Winbond Electronics Corporation W97AH2NBVA2E TR
- Part No.:
- W97AH2NBVA2E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH2NBVA2E TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,481
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Product details
Overview
W97AH2NBVA2E TR from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 11.5mm, 0.5mm pitch), operating at 1066 Mbps data rate with 1.2V core/VDDQ supply and -25°C to +85°C industrial temperature range. It supports burst lengths of 4/8, RL=3/5, WL=1, and features partial array self-refresh (PASR), ZQ calibration, and temperature sensor for power-optimized mobile SoC memory interfaces.
For engineers reviewing the W97AH2NBVA2E TR datasheet, W97AH2NBVA2E TR pinout, W97AH2NBVA2E TR application, or W97AH2NBVA2E TR equivalent, this page delivers verified LPDDR2 timing parameters (tRCD=3, tRP=3, tRRD=2), ball assignment mapping, MR register definitions (MR0–MR63), PASR bank/segment masking, and ZQ calibration initialization/short/long sequences - all specific to the W97AH2NBVA2E TR variant.
Technical Context
This device implements the JEDEC LPDDR2-S4B standard with dual-channel 16-bit I/O (x16 configuration), supporting 1.2V single-supply operation and differential CK/CK# and DQS/DQS# signaling. It uses HSUL_12 I/O drivers with programmable output impedance calibrated via external 240Ω ±1% RZQ resistor and supports both regular and distributed refresh patterns per JEDEC JESD209-2A.
The W97AH2NBVA2E TR integrates on-die temperature sensing (MR4) and supports mode register read/write (MRR/MRW) for runtime configuration of burst type, wrap control, PASR masks (MR16/MR17), and DQ calibration patterns (MR32/MR40). Its command set includes seamless burst read/write (tCCD=2), auto-precharge, deep power-down, and controlled power-off sequences compliant with mobile system-level power management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128Mb × 8) organized as 8 banks × 16K rows × 1K columns |
| Data Rate | 1066 Mbps (LPDDR2-1066, 533 MHz clock) |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V; supports single-supply operation without VDD2 |
| Timing Parameters | tRCD = tRP = 3 × tCK; tRRD = 2 × tCK; tFAW = 20ns minimum |
| Operating Temperature | -25°C to +85°C (industrial grade, specified per JESD22-A104) |
| Refresh Requirement | 8,192 refresh cycles/64ms; supports all-bank and per-bank refresh modes |
| Power Management | Deep power-down current ≤10 µA; supports PASR with bank/segment masking via MR16/MR17 |
Pinout & Package
W97AH2NBVA2E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 11.5mm with 0.5mm ball pitch and standard LPDDR2 ball assignment layout. The package complies with JEDEC MO-270AB and is RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address inputs; A10 used for auto-precharge enable |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for command targeting |
| CK / CK# | Differential Clock | Edge-triggered reference clock for all command and data timing |
| DQS / DQS# | Differential Strobe | Source-synchronous read/write strobe aligned with DQ data edges |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus using HSUL_12 driver with ZQ-calibrated output impedance |
| DM0–DM1 | Data Mask | Byte-level write mask for DQ[7:0] and DQ[15:8]; active-high during write operations |
| CS# | Chip Select | Active-low command enable; sampled on CK rising edge |
| CKE | Clock Enable | Controls entry/exit from power-down and self-refresh states |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC LPDDR2-S4B Compliance | Fully compliant with JESD209-2A specification including command encoding, timing, and electrical requirements |
| ZQ Calibration Support | Enables dynamic output impedance tuning using external 240Ω ±1% RZQ resistor for signal integrity across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by masking inactive banks (MR16) or segments (MR17), configurable at runtime |
| On-Die Temperature Sensor | Monitors die temperature via MR4 register; enables thermal-aware refresh rate adjustment and system throttling |
| Seamless Burst Operations | Supports tCCD = 2-cycle constraint for back-to-back read/write bursts, minimizing bus turnaround latency |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory interface between application processor (e.g., Qualcomm Snapdragon, MediaTek Dimensity) and main system memory in slim-profile smartphones. IC Role / Device Role / Timing Role: LPDDR2-S4B x16 mobile SDRAM providing 1066 Mbps bandwidth with low-voltage 1.2V operation and deep power-down for display-off states. Use Value: Enables 1Gb density in compact 8mm × 11.5mm VFBGA footprint while meeting JEDEC tRCD/tRP=3 timing for sub-15ns command latency. |
Use Scenario: Primary memory subsystem for ARM-based tablet SoCs requiring sustained bandwidth during multimedia playback and multitasking. IC Role / Device Role / Timing Role: Dual-channel-capable LPDDR2 memory supporting burst lengths up to BL=8 and RL=5 for efficient video frame buffering. Use Value: PASR and temperature-aware refresh reduce average current by up to 40% during idle periods, extending battery life without compromising performance. |
| Automotive Infotainment DRAM | Industrial HMI Controller Memory |
Use Scenario: Memory for automotive-grade infotainment head units operating across extended temperature ranges (-25°C to +85°C). IC Role / Device Role / Timing Role: Industrial-temperature LPDDR2-S4B SDRAM with validated reliability under thermal cycling and vibration stress. Use Value: Meets AEC-Q200 stress test requirements for memory components; deep power-down current ≤10 µA supports always-on connectivity modes. |
Use Scenario: Embedded controller memory in human-machine interface panels used in factory automation and medical displays. IC Role / Device Role / Timing Role: Low-power, high-reliability LPDDR2 memory with ZQ calibration and MR-accessible DQ calibration patterns (MR32/MR40). Use Value: HSUL_12 I/O with programmable drive strength ensures robust signal integrity on long PCB traces common in panel-mounted controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KE-107 IT:D | 1Gb LPDDR2 x16, 1066 Mbps, but uses 1.2V/1.8V dual-supply architecture and 144-ball VFBGA (9mm × 13mm) | Requires separate VDD2 rail and larger PCB footprint; lacks integrated temperature sensor and PASR segment masking | Choose when legacy dual-supply design exists or when higher drive strength (1.8V VDD2) is needed for longer trace routing |
| IS42S16160F-6BLI | 1Gb LPDDR2 x16, 800 Mbps (LPDDR2-800), 1.2V single supply, 136-ball VFBGA (8mm × 11.5mm) | Lower data rate (800 vs. 1066 Mbps); no MR17 segment masking support; same ball map but different timing margins (tRCD/tRP=4) | Choose for cost-sensitive designs where 800 Mbps bandwidth suffices and simplified timing margining is preferred |
Compared with MT42L128M16D1KE-107 IT:D and IS42S16160F-6BLI, the W97AH2NBVA2E TR delivers higher bandwidth in identical footprint, integrated thermal monitoring, and finer-grained PASR control - making it optimal for next-generation mobile and industrial LPDDR2 systems requiring power-aware refresh and compact layout.
Availability
W97AH2NBVA2E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment DRAM applications requiring stable component supply, long-term lifecycle support, and industrial-temperature qualification.
Supply support for W97AH2NBVA2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W97AH2NBVA2E TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile and embedded systems requiring JEDEC-compliant high-speed memory with advanced power management features like PASR and ZQ calibration.
FAQ
What is the ball count and package type of W97AH2NBVA2E TR?
The W97AH2NBVA2E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 11.5mm with 0.5mm pitch. This matches JEDEC MO-270AB mechanical specifications and is compatible with standard LPDDR2-S4B layout guidelines. The ball assignment follows the standard CA/DQ/CK/DQS/DM/CS#/CKE layout defined in the Winbond datasheet revision A01-003.
Does W97AH2NBVA2E TR support ZQ calibration, and what external component is required?
Yes, the W97AH2NBVA2E TR supports full ZQ calibration including initialization, short, and long calibration sequences per JEDEC JESD209-2A. It requires an external 240Ω ±1% precision resistor (RZQ) connected between ZQ pin and VSS, with recommended capacitive loading ≤2.2pF. Calibration adjusts RONPU/RONPD output driver impedance to maintain signal integrity across voltage and temperature variations.
What LPDDR2 timing parameters are guaranteed for W97AH2NBVA2E TR at 1066 Mbps?
At 1066 Mbps (533 MHz clock), the W97AH2NBVA2E TR guarantees tRCD = tRP = 3 × tCK, tRRD = 2 × tCK, tFAW ≥ 20ns, and tCCD = 2 cycles. These values are validated across the full -25°C to +85°C temperature range and 1.2V ±0.06V supply. The device also supports seamless burst operations and auto-precharge with RU(tRTP/min)/tCK = 2 or 3 depending on burst length.
How does the temperature sensor in W97AH2NBVA2E TR function, and how is it accessed?
The W97AH2NBVA2E TR includes an on-die temperature sensor accessible via Mode Register MR4 (MA[7:0] = 04H). The sensor provides a digital reading that reflects junction temperature and is used by system firmware to adjust refresh rates or trigger thermal throttling. No external ADC is needed - the value is read directly through standard MRR commands with RL=3 and tMRR=2 timing.
Is W97AH2NBVA2E TR pin-compatible with other Winbond LPDDR2 parts like W97AH6NB?
No, the W97AH2NBVA2E TR is not pin-compatible with W97AH6NB. Although both share the same 136-ball VFBGA package and LPDDR2-S4B interface, their ball assignments differ: W97AH2NB uses a 1Gb x16 configuration with dedicated CA[0:13], BA[0:2], and DQ[0:15], while W97AH6NB is a 512Mb x32 part requiring different CA/BA mapping and dual DQ groups. Board-level reuse is not supported without redesign.
W97AH2NBVA2E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH2NBVA2E TR FAQ
1.How can I place an order for W97AH2NBVA2E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH2NBVA2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH2NBVA2E TR reliable?
The price and inventory of W97AH2NBVA2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH2NBVA2E TR is usually 5 days.
3.What payment methods are accepted for W97AH2NBVA2E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH2NBVA2E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH2NBVA2E TR?
W97AH2NBVA2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH2NBVA2E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH2NBVA2E TR?
For technical support, including W97AH2NBVA2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH2NBVA2E TR requirements.
6.How does Aetrix verify that W97AH2NBVA2E TR is sourced from the original manufacturer or authorized distributors?
All W97AH2NBVA2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH2NBVA2E TR meets industry standards.
7.What is the process for return or replacement of W97AH2NBVA2E TR?
All W97AH2NBVA2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH2NBVA2E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH2NBVA2E TR part is unused and in its original packaging.
Return procedure for W97AH2NBVA2E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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