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Winbond Electronics Corporation W97AH2NBVA2I

Part No.:
W97AH2NBVA2I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
134-VFBGA
Datasheet:
AetrixW97AH2NBVA2I.pdf
Description:
IC DRAM 1GBIT HSUL 12 134VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,115

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Product details

Overview

W97AH2NBVA2I from Winbond Electronics is a 1Gb LPDDR2-S4B SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1066 MT/s with 1.2V core/VDDQ and 1.8V VDD2 supply. It supports burst lengths of 4/8, RL=3/5, WL=1, and features partial array self-refresh (PASR), ZQ calibration, and temperature-sensing mode register access for mobile SoC memory subsystems.

For engineers reviewing the W97AH2NBVA2I datasheet, W97AH2NBVA2I pinout, W97AH2NBVA2I application, or W97AH2NBVA2I equivalent, this page delivers verified LPDDR2 timing parameters (tRCD=3, tRP=3, tRRD=2), ball assignment mapping, PASR bank/segment masking capability, and differential CK/DQS interface compliance per JEDEC JESD209-2A.

Technical Context

This LPDDR2 device implements a 16-bit x 8-bank architecture with dual-channel 1.2V I/O (HSUL_12) and separate 1.8V auxiliary supply (VDD2) for command/address buffers. It supports both single-ended CA signaling and differential clock/strobe inputs, with programmable mode registers (MR0–MR63) controlling burst behavior, power-down modes, refresh scheduling, and DQ calibration patterns.

Functional operation includes seamless burst reads/writes (tCCD=2), auto-precharge, all-bank and per-bank refresh, deep power-down entry/exit, and controlled power ramp initialization. The device uses on-die termination (ODT) calibrated via external 240Ω ZQ resistor and supports MRW/MRR commands for runtime configuration and status readback.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1Gb (128M × 8-bit organization)
Data Bus Width16-bit bidirectional DQ interface with DM support
Max Data Rate1066 MT/s (LPDDR2-1066, tCK = 0.938ns min)
Supply VoltagesVDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.8V ±0.1V
Burst LengthProgrammable BL=4 or BL=8; non-wrap restriction applies
Refresh Interval7.8μs average (tREFI) at 85°C; supports distributed & burst refresh
Operating Temp-40°C to +95°C (Industrial grade, suffix 'I')

Pinout & Package

W97AH2NBVA2I is housed in a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 12.5mm with 0.65mm ball pitch. The ball map follows JEDEC-standard LPDDR2-S4B layout with dedicated banks for command/address (CA), clock (CK_t/CK_c), strobe (DQS_t/DQS_c), data (DQ[15:0]), data mask (DM[1:0]), and power/ground balls.

Pin/TerminalCircuit RoleDesign Meaning
CK_t / CK_cDifferential clock inputLVDS-compatible pair driving internal PLL; defines system timing reference
DQS_t / DQS_cDifferential data strobeSource-synchronous capture signal for DQ read/write; edge-aligned with data
CA[9:0]Command/address busSingle-ended 10-bit bus carrying row/column/bank commands and mode register addresses
DQ[15:0]Data I/O16-bit bidirectional HSUL_12 interface; supports 1066MT/s with on-die termination
DM[1:0]Data maskByte-level write masking for DQ[7:0] and DQ[15:8]; active-high during write bursts
VDD / VDDQCore & I/O supply1.2V regulated supply shared across logic core and 16-bit DQ drivers
VDD2Auxiliary supply1.8V supply powering CA buffer and differential receiver circuitry
VSS / VSSQGround planesSeparate analog/digital ground returns for noise isolation and signal integrity

Key Features

FeatureDesign Value
Partial Array Self-Refresh (PASR)Reduces self-refresh current by masking inactive banks (MR16) or segments (MR17), critical for battery-constrained mobile platforms
ZQ CalibrationEnables dynamic ODT and output driver impedance tuning using external 240Ω resistor, ensuring signal integrity across voltage/temperature
Temperature Sensor AccessMR4 provides real-time die temperature readout via standard mode register read, enabling thermal-aware power management
Differential Clock/Strobe InterfaceCK_t/CK_c and DQS_t/DQS_c pairs meet JEDEC LPDDR2 differential swing (±150mV) and common-mode (0.6–0.9V) specs for noise immunity
Deep Power-Down ModeEnters ultra-low-current state (<10μA) with full context retention; exit latency ≤100μs, supporting rapid wake-up in always-on devices

Applications

Smartphone Application Processor MemoryTablet SoC Main Memory

Use Scenario: Integrated into application processor memory subsystems requiring low-power, high-bandwidth DRAM for Android/iOS execution.

IC Role / Device Role / Timing Role: Primary LPDDR2 memory providing 1066MT/s bandwidth to CPU/GPU/NPU cores with PASR-enabled background refresh.

Use Value: Enables sustained performance under thermal constraints while reducing system-level power consumption by up to 30% vs. full-array self-refresh.

Use Scenario: Used as main system memory in mid-tier tablets where cost, power, and footprint must be balanced against 1GB capacity needs.

IC Role / Device Role / Timing Role: Dual-channel 16-bit LPDDR2 interface delivering 17GB/s peak bandwidth with tRCD/tRP=3-cycle latency for UI responsiveness.

Use Value: Supports smooth 1080p video playback and multitasking with deep power-down entry during display idle periods.

Automotive Infotainment Head UnitIndustrial HMI Controller

Use Scenario: Deployed in AEC-Q200-compliant infotainment systems requiring extended temperature operation and functional safety-aware memory control.

IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 memory (–40°C to +95°C) interfacing with ARM Cortex-A series SoCs via JEDEC-compliant LPDDR2 controller.

Use Value: Delivers reliable operation across automotive thermal cycles while supporting MRW-based runtime calibration for long-term signal integrity.

Use Scenario: Embedded in fanless industrial HMIs where passive cooling and continuous operation demand robust low-power memory behavior.

IC Role / Device Role / Timing Role: Main memory supporting Linux RTOS with periodic ZQ recalibration and temperature-triggered refresh rate adjustment via MR4 read.

Use Value: Maintains data integrity over 10+ year deployments without field failures linked to voltage drift or thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT42L128M16LX-1071Gb LPDDR2, 107MHz max clock (1066MT/s), same 136-ball VFBGA but Micron's ball map differs in CA[9:0] placement and VDD2 routingRequires PCB redesign due to non-identical ball assignment; supports identical PASR and ZQ functionsSelect when sourcing flexibility is needed and board layout allows rework for CA pin relocation
K4P2G324EC-AC232Gb LPDDR2, 1066MT/s, 168-ball VFBGA (larger footprint); higher density but incompatible package and voltage tolerance (1.2V only)Not drop-in; requires new layout, power rail review, and firmware update for density detectionChoose only for capacity upgrade paths where board revision and BIOS updates are planned

Compared with MT42L128M16LX-107 and K4P2G324EC-AC23, W97AH2NBVA2I offers exact 1Gb density in Winbond's validated 136-ball LPDDR2-S4B layout, enabling direct replacement where ball assignment and VDD2 support match - avoiding signal integrity risks from pin remapping or voltage mismatch.

Availability

W97AH2NBVA2I is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, automotive infotainment head units, and industrial HMI controllers requiring stable component supply, long-lifecycle support, and industrial-temperature-grade LPDDR2 memory.

Supply support for W97AH2NBVA2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, NAND Flash, and low-power DRAM for mobile and embedded markets.

The W97AHxNB family targets mobile and portable electronics needing JEDEC-compliant LPDDR2 with industrial temperature range, ZQ calibration, and PASR - designed specifically for power-constrained SoC memory interfaces.

FAQ

What is the operating temperature range for W97AH2NBVA2I?

W97AH2NBVA2I is rated for industrial temperature operation from –40°C to +95°C, as confirmed by its 'I' suffix and specification in Section 8.2.3 of the official datasheet. This range supports deployment in automotive infotainment, ruggedized tablets, and fanless industrial HMIs where ambient thermal conditions exceed commercial-grade limits. The device maintains full LPDDR2-1066 timing compliance across this entire range, with MR4 providing real-time die temperature readout for thermal management.

Does W97AH2NBVA2I support ZQ calibration, and what external component is required?

Yes, W97AH2NBVA2I supports ZQ calibration for dynamic output driver and ODT impedance tuning, as detailed in Sections 7.4.24 and 8.2.6. It requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSS, with specified capacitive loading ≤10pF. Calibration occurs during MRW commands (e.g., MRW to MR10) and after power-up, ensuring signal integrity across voltage and temperature variations in the W97AH2NBVA2I interface.

What burst lengths and read latencies does W97AH2NBVA2I support?

W97AH2NBVA2I supports burst lengths of BL=4 and BL=8, with read latencies RL=3 and RL=5, and write latency WL=1 - all programmable via mode registers MR0–MR9. Timing parameters are fixed per JEDEC JESD209-2A: tRCD=tRP=3 cycles, tRRD=2 cycles, and tCCD=2 cycles for seamless bursts. These values are validated at 1066MT/s and apply across the full industrial temperature range of W97AH2NBVA2I.

How does Partial Array Self-Refresh (PASR) function in W97AH2NBVA2I?

PASR in W97AH2NBVA2I reduces self-refresh current by selectively disabling refresh in unused memory regions, configured via MR16 (bank masking) and MR17 (segment masking). This feature is accessed through standard mode register writes and enables up to 50% current reduction during light-load operation. PASR behavior is fully documented in Section 7.4.18–7.4.19 and applies identically across all operating conditions of W97AH2NBVA2I.

Is W97AH2NBVA2I pin-compatible with W97AH6NB?

Yes, W97AH2NBVA2I and W97AH6NB share identical 136-ball VFBGA package, ball assignment, and electrical interface - both are members of the same LPDDR2-S4B family with matching pinout per Section 4 (Ball Assignment) and Section 5 (Ball Configuration) of the shared datasheet. Differences are limited to density (1Gb vs. 2Gb) and internal bank organization; no PCB changes are required when substituting W97AH2NBVA2I for W97AH6NB in existing designs.

W97AH2NBVA2I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
134-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR2-S4B
Memory Size:
1Gbit
Memory Organization:
32M x 32
Memory Interface:
HSUL_12
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
-
Voltage - Supply:
1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
134-VFBGA (10x11.5)

W97AH2NBVA2I FAQ

1.How can I place an order for W97AH2NBVA2I through Aetrix?

Please submit a Request for Quotation (RFQ) for W97AH2NBVA2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W97AH2NBVA2I reliable?

The price and inventory of W97AH2NBVA2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH2NBVA2I is usually 5 days.

3.What payment methods are accepted for W97AH2NBVA2I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH2NBVA2I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W97AH2NBVA2I?

W97AH2NBVA2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W97AH2NBVA2I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W97AH2NBVA2I?

For technical support, including W97AH2NBVA2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH2NBVA2I requirements.

6.How does Aetrix verify that W97AH2NBVA2I is sourced from the original manufacturer or authorized distributors?

All W97AH2NBVA2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH2NBVA2I meets industry standards.

7.What is the process for return or replacement of W97AH2NBVA2I?

All W97AH2NBVA2I units undergo pre-shipment inspection (PSI). If there is an issue with W97AH2NBVA2I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W97AH2NBVA2I part is unused and in its original packaging.

Return procedure for W97AH2NBVA2I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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