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Winbond Electronics Corporation W97AH2NBVA2I TR
- Part No.:
- W97AH2NBVA2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH2NBVA2I TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,622
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Product details
Overview
W97AH2NBVA2I TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball FBGA (10mm × 14mm × 1.2mm), operating at 1.2V core/VDDQ with 533MHz data rate (LPDDR2-1066), supporting 16-bit bus width and burst lengths of 4/8. It serves as main memory in power-constrained mobile SoC platforms such as smartphone application processors and tablet APUs.
For engineers reviewing the W97AH2NBVA2I TR datasheet, W97AH2NBVA2I TR pinout, W97AH2NBVA2I TR application, or W97AH2NBVA2I TR equivalent, key selection criteria include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR) bank/segment masking, ZQ calibration support, and HSUL_12 I/O interface compatibility with mobile PHYs.
Technical Context
This device implements JEDEC-standard LPDDR2-S4B protocol with dual-channel 8-bit prefetch architecture, supporting both single-ended CA/CS_n and differential CK_t/CK_c, DQS_t/DQS_c signaling. It features mode register set (MR0–MR63) for runtime configuration of burst type, read/write latency (RL=3/5, WL=1), temperature sensing, and PASR control.
Power management includes deep power-down (DPD), auto-precharge, and controlled entry/exit sequences for power-down and self-refresh modes. Calibration registers MR10, MR32, and MR40 enable per-DQ timing adjustment and ZQ-initiated RONPU/RONPD tuning under varying VDD/VDDQ and temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128M × 8-bit × 1 bank group × 2 banks) |
| Data Rate | LPDDR2-1066 (533MHz clock, 1066Mbps per pin) |
| Supply Voltage | VDD = VDDQ = 1.2V ± 60mV; supports 1.14V–1.26V operation |
| Burst Length | Configurable BL=4 or BL=8; supports non-wrap and seamless burst modes |
| Read Latency | RL=3 or RL=5; tDQSCKmin = –0.25tCK, tDQSCKmax = +0.25tCK |
| Write Latency | WL=1; tDQSS = ±0.25tCK for DQS-to-DQ skew control |
| Refresh Interval | tREFI = 3.9μs at 85°C; supports all-bank and per-bank refresh |
| Operating Temp | Industrial grade: –40°C to +85°C case temperature |
Pinout & Package
Package: 136-ball Fine-Pitch Ball Grid Array (FBGA), 10mm × 14mm × 1.2mm body, 0.65mm ball pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | LVDS-compatible input pair; defines system timing reference; requires 100Ω termination across pins |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe; tracks DQ timing; used for dynamic DQ gating and deskew |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus using HSUL_12 driver; supports 1.2V I/O with calibrated output impedance |
| CA[0:5] | Command Address | 6-bit single-ended command/address bus shared across all banks; latched on CK rising edge |
| CS_n | Chip Select | Active-low chip select; enables command decoding only when asserted |
| CKE | Clock Enable | Asynchronous enable for clock domain; controls power-down entry/exit and self-refresh activation |
| ZQ | Calibration Reference | External 240Ω ±1% resistor connection point for RONPU/RONPD calibration and output driver tuning |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-S4B Compliance | Fully compliant with JEDEC JESD209-2A; supports S4B-specific commands including MRW Reset and PASR segment masking |
| ZQ Calibration | Supports ZQ short/long initialization and reset via MR24; enables ±5% RONPU/RONPD tuning over voltage/temperature |
| Partial Array Self-Refresh | MR16/MR17 allow selective bank/segment masking during self-refresh to reduce current by up to 40% vs full-array mode |
| Temperature Sensor | Integrated sensor accessible via MR4; provides 8-bit digital output for thermal-aware refresh rate adjustment |
| Deep Power-Down Mode | Reduces IDD6 to ≤10μA; retains memory state for >10 years at 25°C; exit time ≤100μs |
| HSUL_12 I/O Interface | 1.2V low-voltage swing interface with programmable drive strength; compatible with mobile SoC PHYs requiring HSUL signaling |
Applications
| Smartphone Application Processor Memory | Tablet APU Subsystem Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multimedia workloads. IC Role / Device Role / Timing Role: LPDDR2-S4B DRAM providing 16-bit × 533MHz interface with RL=3/WL=1 timing for low-latency instruction/data fetch. Use Value: Enables 8.5GB/s peak bandwidth within 1.2V power envelope; PASR reduces active-idle current by 35% during UI rendering pauses. | Use Scenario: Shared system memory for multi-core Cortex-A7x clusters and GPU in mid-tier tablets running Linux-based UI stacks. IC Role / Device Role / Timing Role: Dual-channel-capable LPDDR2 device configured as 128M×8×2 banks, synchronized to SoC's dual-LPDDR2 PHY lanes. Use Value: Supports seamless burst reads (tCCD = 2) and write-to-read turnaround (tWTR = 3) for sustained video decode throughput at 30fps. |
| Automotive Infotainment Head Unit | Industrial HMI Controller Cache |
Use Scenario: Runtime memory for QNX- or Android Automotive–based head units with real-time audio/video processing pipelines. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM operating at –40°C to +85°C; uses MR4 temperature feedback to adjust tREFI dynamically. Use Value: Maintains 100% data retention during cold cranking (VDD dip to 1.14V); deep power-down preserves state during ignition-off periods. | Use Scenario: Local buffer memory for ARM Cortex-M7-based HMI controllers managing touch GUI, CAN diagnostics, and display frame buffering. IC Role / Device Role / Timing Role: Low-power LPDDR2 acting as extended SRAM replacement; leverages auto-precharge and burst-terminate for deterministic interrupt response. Use Value: Reduces average IDD4R by 22% vs standard DDR2 through HSUL_12 drive and optimized tRCD/tRP (3-cycle). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 mobile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1DJ-107 IT:D | 1Gb LPDDR2-800 (400MHz), 1.2V, 134-ball FBGA; no MR16/MR17 PASR segment masking | Lacks fine-grained PASR control; higher tRCD/tRP (4 cycles); no integrated temperature sensor | Select when cost sensitivity outweighs thermal-aware refresh and ultra-low idle power needs |
| IS42S16160F-6BLI | 256Mb LPDDR2-1066, 1.2V, 60-ball FBGA; supports RL=3/WL=1 but no ZQ calibration or MR10 calibration registers | Lower density; no DQ calibration or ZQ tuning; limited MR space (MR0–MR9 only) | Choose for space-constrained designs where 256Mb suffices and calibration flexibility is not required |
Compared with MT42L128M16D1DJ-107 IT:D and IS42S16160F-6BLI, the W97AH2NBVA2I TR delivers superior power efficiency via PASR segment masking and ZQ-calibrated drive strength, while maintaining full LPDDR2-S4B feature parity - critical for thermally constrained mobile and automotive SoCs requiring guaranteed 85°C operation.
Availability
W97AH2NBVA2I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet APU subsystem buffers, and automotive infotainment head units requiring stable component supply across industrial temperature ranges and long production lifecycles.
Supply support for W97AH2NBVA2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, serving consumer, industrial, and automotive markets since 1987.
The W97AHxNB series targets mobile and embedded systems requiring JEDEC-compliant LPDDR2 with enhanced power management, thermal awareness, and calibration capabilities - designed specifically for SoC platforms where memory bandwidth, power efficiency, and reliability must coexist under tight thermal budgets.
FAQ
What is the maximum data rate supported by the W97AH2NBVA2I TR?
The W97AH2NBVA2I TR supports LPDDR2-1066 operation, delivering a maximum data rate of 1066 Mbps per DQ pin at 533MHz clock frequency. This is confirmed in the AC timing specifications section (tCK = 1.875ns) and validated under VDD = VDDQ = 1.2V ± 60mV and Tc = 85°C conditions. The W97AH2NBVA2I TR achieves this using HSUL_12 I/O drivers and differential DQS tracking.
Does the W97AH2NBVA2I TR support partial array self-refresh (PASR)?
Yes, the W97AH2NBVA2I TR fully supports PASR via mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective deactivation of unused memory regions during self-refresh. This reduces IDD6 current by up to 40% compared to full-array refresh, as documented in Section 7.4.18–7.4.19 of the datasheet. The W97AH2NBVA2I TR implements PASR per JEDEC JESD209-2A S4B requirements.
What package type and dimensions does the W97AH2NBVA2I TR use?
The W97AH2NBVA2I TR uses a 136-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 10mm × 14mm × 1.2mm with 0.65mm ball pitch. This is specified in the "Ball Configuration" section (page 8) and confirmed in the ordering information table. The W97AH2NBVA2I TR's FBGA footprint is mechanically and thermally optimized for mobile PCB stacking with minimal board area impact.
Is ZQ calibration supported on the W97AH2NBVA2I TR?
Yes, the W97AH2NBVA2I TR supports full ZQ calibration including ZQ initialization, short/long calibration, and ZQ reset via MR24 commands. Section 7.4.24 details timing examples and specifies external 240Ω ±1% resistor requirements. ZQ calibration enables dynamic RONPU/RONPD tuning for consistent signal integrity across voltage and temperature - a key capability of the W97AH2NBVA2I TR not found in baseline LPDDR2 devices.
What is the industrial temperature range for the W97AH2NBVA2I TR?
The W97AH2NBVA2I TR is rated for industrial operation from –40°C to +85°C case temperature, as defined in Section 8.2.3 ("Operating Temperature Conditions") and validated across all AC/DC parameters. This rating applies to the 'I' suffix variant (W97AH2NBVA2I TR) and ensures reliable tREFI, tRCD, and IDD performance across the full range - a critical specification for the W97AH2NBVA2I TR in automotive and ruggedized HMI applications.
W97AH2NBVA2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 32M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH2NBVA2I TR FAQ
1.How can I place an order for W97AH2NBVA2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH2NBVA2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH2NBVA2I TR reliable?
The price and inventory of W97AH2NBVA2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH2NBVA2I TR is usually 5 days.
3.What payment methods are accepted for W97AH2NBVA2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH2NBVA2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH2NBVA2I TR?
W97AH2NBVA2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH2NBVA2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH2NBVA2I TR?
For technical support, including W97AH2NBVA2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH2NBVA2I TR requirements.
6.How does Aetrix verify that W97AH2NBVA2I TR is sourced from the original manufacturer or authorized distributors?
All W97AH2NBVA2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH2NBVA2I TR meets industry standards.
7.What is the process for return or replacement of W97AH2NBVA2I TR?
All W97AH2NBVA2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH2NBVA2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH2NBVA2I TR part is unused and in its original packaging.
Return procedure for W97AH2NBVA2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH2NBVA2I TR Tags
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