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Winbond Electronics Corporation W97AH6KBVX2E
- Part No.:
- W97AH6KBVX2E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6KBVX2E.pdf
- Description:
- IC DRAM 1GBIT 134-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,447
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Product details
Overview
W97AH6KBVX2E from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM with 134-ball VFBGA (8mm × 10.5mm × 0.8mm), 1.2V core/VDDQ supply, 533MHz data rate (LPDDR2-1066), and support for partial array self-refresh (PASR) and ZQ calibration. It serves as main memory in space-constrained mobile SoC platforms such as smartphones and tablets.
For engineers reviewing the W97AH6KBVX2E datasheet, W97AH6KBVX2E pinout, W97AH6KBVX2E application, or W97AH6KBVX2E equivalent, key selection considerations include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3), 134-ball VFBGA mechanical compatibility, PASR bank/segment masking capability, and HSUL_12 I/O interface requirements.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit data bus (x16 organization), eight internal banks, and programmable mode registers for burst length (BL=4/8), read/write latency (RL=3/5, WL=1), and temperature-compensated refresh. It supports seamless burst operations, auto-precharge, and deep power-down modes.
Power management includes controlled power-up initialization with tRamp ≥ 100μs, CKE-gated power-down entry/exit, and MR10-triggered DQ calibration using external 240Ω ±1% ZQ resistor. The HSUL_12 driver output meets LPDDR2 differential swing (CK_t–CK_c ≥ 250mV) and single-ended input thresholds (VIH = 0.7×VDDQ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 1Gb density (64M×16) |
| Data Rate | 1066 MT/s (533MHz clock), compliant with LPDDR2-1066 timing bin |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V; supports HSUL_12 I/O signaling |
| Package | 134-ball VFBGA, 0.5mm pitch, 8mm × 10.5mm footprint, 0.8mm height |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles, tFAW = 12 cycles at 533MHz |
| Power Modes | Active, Power-Down, Deep Power-Down, Self-Refresh, Partial Array Self-Refresh (PASR) |
| Calibration | ZQ calibration via MR24; DQ calibration via MR32/MR40; RONPU/RONPD tracking over voltage/temperature |
Pinout & Package
W97AH6KBVX2E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, 8mm × 10.5mm body size, and 0.8mm maximum height. Pin assignment follows JEDEC-standard LPDDR2 ballout for x16 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (x16 bus) | Bi-directional HSUL_12 data lines; require matched trace lengths and Vref termination |
| DM0–DM1 | Data Mask | Per-byte write mask control for DQ[7:0] and DQ[15:8]; active-high during write bursts |
| CK_t / CK_c | Differential Clock Input | LVDS-compatible 533MHz clock pair; defines system timing reference; requires 100Ω differential termination |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read strobe pair; used for DQ capture alignment; must be length-matched to DQ |
| CA0–CA10 | Command Address Bus | Multiplexed column/address/control inputs; sampled on CK rising edge; require tight skew control |
| CKE | Clock Enable | Asynchronous gate for clock domain entry/exit; controls power-down and self-refresh activation |
| RESET_n | Asynchronous Reset | Hardware reset input; initiates initialization sequence when asserted low for ≥200ns |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | MR16/MR17 enable selective bank or segment retention during self-refresh, reducing standby current by up to 40% vs full-array mode |
| ZQ Calibration | On-die impedance tuning using external 240Ω resistor; maintains RONPU/RONPD within ±5% across voltage/temperature |
| HSUL_12 I/O Interface | Low-voltage swing (250–400mV diff), reduced EMI, and improved noise margin vs LVTTL; compatible with mobile SoC PHYs |
| Programmable Latency | Read latency (RL) configurable to 3 or 5 cycles; write latency (WL) fixed at 1 cycle; enables timing optimization per host controller |
| Deep Power-Down Mode | Reduces IDD6 to ≤10μA; retains no data but allows faster wake-up than full power-cycle; entered via MR26 command |
Applications
| Smartphone Application | Tablet Platform |
|---|---|
Use Scenario: Main memory subsystem in mid-tier Android smartphone with ARM Cortex-A53 SoC and 2GB total RAM (dual W97AH6KBVX2E devices). IC Role / Device Role / Timing Role: LPDDR2 x16 channel memory providing 8.5GB/s peak bandwidth at 533MHz; handles OS, app execution, and GPU frame buffers. Use Value: PASR reduces idle current to <150μA per chip, extending battery life during screen-off periods without compromising wake latency. | Use Scenario: Primary memory in 7-inch educational tablet with quad-core application processor and integrated graphics. IC Role / Device Role / Timing Role: Dual-rank LPDDR2 interface supporting burst reads/writes with tCCD = 2 and seamless RL=3/BL=4 operation for UI responsiveness. Use Value: HSUL_12 signaling ensures signal integrity across 40mm PCB traces while meeting 30ps inter-pair skew requirement for DQS–DQ alignment. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Memory for automotive-grade infotainment head unit operating in -40°C to +85°C ambient. IC Role / Device Role / Timing Role: Temperature-aware LPDDR2 with MR4-reported die temperature and adaptive refresh scheduling (tSRF scaling). Use Value: MR4 readout enables host firmware to adjust refresh rate dynamically, maintaining data retention reliability across extended temperature range. | Use Scenario: Embedded HMI controller in factory-floor operator panel requiring long-term component availability and ESD robustness. IC Role / Device Role / Timing Role: Non-automotive LPDDR2 memory with 134-ball VFBGA footprint enabling compact 4-layer PCB layout and IPC Class 2 manufacturability. Use Value: VFBGA package supports reflow soldering at peak 260°C and achieves >1000 thermal cycles without solder joint failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 IT:D | 1Gb LPDDR2, 168-ball WFBGA, 1066MT/s, same VDD/VDDQ but wider 10.5mm × 13mm package | Requires PCB redesign due to larger footprint and different ball map; no PASR support | Select only if board layout accommodates 168-ball WFBGA and PASR is not required |
| IS42S16100E-XXBL | 1Gb LPDDR2, 134-ball VFBGA, 800MT/s (400MHz), lacks ZQ calibration and MR10/MR32/MR40 registers | Lower performance ceiling; incompatible with high-speed timing bins (tRCD/tRP = 3); no DQ calibration | Choose for cost-sensitive designs where 800MT/s suffices and calibration-free operation is acceptable |
Compared with MT42L128M16D1KJ-107 IT:D and IS42S16100E-XXBL, W97AH6KBVX2E delivers identical density and VFBGA compatibility but adds PASR, ZQ/DQ calibration, and full LPDDR2-1066 timing compliance-enabling lower power, higher signal integrity, and tighter timing margins in mobile-optimized systems.
Availability
W97AH6KBVX2E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet platform integration, and industrial HMI display controllers requiring stable component supply and long-term lifecycle support.
Supply support for W97AH6KBVX2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
W97AH6KBVX2E belongs to Winbond's LPDDR2-S4B product line, designed specifically for space-constrained, battery-powered applications demanding high bandwidth, low standby current, and JEDEC-compliant mobile memory interfaces.
FAQ
What is the package type and dimensions of W97AH6KBVX2E?
W97AH6KBVX2E uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, 8mm × 10.5mm body size, and maximum height of 0.8mm. This matches JEDEC MO-245AC standard and is optimized for thin mobile PCB assemblies. The pinout is defined in Section 4.1 of the official datasheet.
Does W97AH6KBVX2E support partial array self-refresh (PASR)?
Yes, W97AH6KBVX2E supports PASR via mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective retention of active memory regions during self-refresh. This feature reduces IDD6 current by up to 40% compared to full-array refresh, directly extending battery life in always-on mobile devices.
What is the maximum data rate supported by W97AH6KBVX2E?
W97AH6KBVX2E supports a maximum data rate of 1066 MT/s (533MHz clock frequency), compliant with the LPDDR2-1066 timing bin. Key timing parameters include tRCD = tRP = 3 cycles and tRRD = 2 cycles at this speed, as verified in Section 7.4.1 of the datasheet.
How does ZQ calibration work on W97AH6KBVX2E?
ZQ calibration on W97AH6KBVX2E uses an external 240Ω ±1% precision resistor connected to the ZQ pin to tune internal pull-up/pull-down driver impedances (RONPU/RONPD). Calibration is initiated via MR24 command and ensures output impedance stays within ±5% across voltage and temperature variations, critical for HSUL_12 signal integrity.
Is W97AH6KBVX2E compatible with standard LPDDR2 controllers?
Yes, W97AH6KBVX2E fully complies with JEDEC JESD209-2A LPDDR2 specification and is interoperable with industry-standard LPDDR2 memory controllers. It supports all mandatory commands (activate, read, write, precharge, refresh), mode register definitions, and timing diagrams required for drop-in integration into validated LPDDR2 host designs.
W97AH6KBVX2E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- -
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6KBVX2E FAQ
1.How can I place an order for W97AH6KBVX2E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6KBVX2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6KBVX2E reliable?
The price and inventory of W97AH6KBVX2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6KBVX2E is usually 5 days.
3.What payment methods are accepted for W97AH6KBVX2E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6KBVX2E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6KBVX2E?
W97AH6KBVX2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6KBVX2E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6KBVX2E?
For technical support, including W97AH6KBVX2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6KBVX2E requirements.
6.How does Aetrix verify that W97AH6KBVX2E is sourced from the original manufacturer or authorized distributors?
All W97AH6KBVX2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6KBVX2E meets industry standards.
7.What is the process for return or replacement of W97AH6KBVX2E?
All W97AH6KBVX2E units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6KBVX2E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6KBVX2E part is unused and in its original packaging.
Return procedure for W97AH6KBVX2E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6KBVX2E Tags
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M24C02-WMN6TP
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