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Winbond Electronics Corporation W97AH6KBVX2E TR
- Part No.:
- W97AH6KBVX2E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6KBVX2E TR.pdf
- Description:
- IC DRAM 1GBIT 134-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,861
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Product details
Overview
W97AH6KBVX2E TR from Winbond is a 1Gb LPDDR2 SDRAM in 134-ball VFBGA package, operating at 800 Mbps data rate (LPDDR2-800), supporting 1.2V I/O and 1.2V core voltage, with burst lengths of 4/8 and CAS latency options of RL=3/RL=5. It serves as main memory in mobile application processors and low-power embedded SoCs.
For engineers reviewing the W97AH6KBVX2E TR datasheet, W97AH6KBVX2E TR pinout, W97AH6KBVX2E TR application, or W97AH6KBVX2E TR equivalent, key selection factors include LPDDR2-800 timing compliance, VFBGA-134 mechanical compatibility, partial array self-refresh (PASR) support, and ZQ calibration for output impedance control.
Technical Context
This device implements the JEDEC JESD209-2A LPDDR2 standard with dual-channel 16-bit data bus (x16 organization), 8 internal banks, and programmable mode registers for configuration of burst type, CAS latency, drive strength, and temperature-compensated refresh. It supports both single-ended CA/CS_n signaling and differential CK/DQS pairs.
Power management includes deep power-down, auto-precharge, and partial array self-refresh using MR16/MR17 bank and segment masking. Initialization requires precise tRCD=3, tRP=3, tRRD=2 timing cycles and ZQ calibration during power-up per MR10 and MR24 commands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2 SDRAM, 1Gb density (64M x 16) |
| Data Rate | 800 Mbps (LPDDR2-800), tCK = 2.5 ns minimum clock period |
| Voltage Supply | 1.2V core & I/O, compliant with LPDDR2 VDD/VDDQ spec |
| Burst Length | Configurable BL=4 or BL=8 via MR3 |
| CAS Latency | RL=3 or RL=5 selectable via MR0 |
| Package | 134-ball Very Fine Pitch BGA (VFBGA), 6.4 mm × 8.0 mm × 0.65 mm height |
| Operating Temp | Industrial grade: –40°C to +85°C case temperature |
Pinout & Package
W97AH6KBVX2E TR uses a 134-ball VFBGA package with 0.4 mm ball pitch. Pin functions follow JEDEC LPDDR2 standard layout for x16 configuration, including dual DQS/DQSn strobes, 14-bit address/command bus (CA[13:0]), and dedicated ZQ calibration pin.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (x16) | Bidirectional data bus; HSUL_12 driver with ZQ-trimmed RONPU/RONPD |
| DQS0/DQS0# | Differential read/write strobe | Source-synchronous timing reference for DQ0–DQ7; supports tDQSCKmin/tDQSCKmax alignment |
| DQS1/DQS1# | Differential read/write strobe | Source-synchronous timing reference for DQ8–DQ15; independent delay calibration |
| CK/CK# | Differential clock input | System clock reference; defines tCK cycle time and all timing parameters |
| CA0–CA13 | Command/address bus | Multiplexed row/column/address and command signals; single-ended, 1.2V logic |
| CS#, CKE, RAS#, CAS#, WE# | Control inputs | Chip select, clock enable, and command decode signals; sampled on CK rising edge |
| ZQ | Calibration reference | External 240Ω ±1% resistor connection point for output driver impedance tuning |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by masking inactive banks/segments via MR16/MR17 |
| ZQ Calibration | Dynamic output driver impedance adjustment using external ZQ resistor to maintain signal integrity |
| Temperature Sensor | On-die thermal monitor enabling adaptive refresh rate scaling per MR4 |
| Deep Power-Down Mode | Ultra-low standby current (<10 µA) with full state retention and fast wake-up |
| Seamless Burst Operations | tCCD = 2-cycle constraint enables uninterrupted back-to-back reads/writes without bus turnaround penalty |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment DRAM |
|---|---|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT series) in smartphones and tablets. IC Role / Device Role / Timing Role: LPDDR2-800 x16 SDRAM providing 1.6 GB/s peak bandwidth with RL=3, BL=4 timing. Use Value: Enables responsive UI rendering and multitasking while meeting strict mobile power budgets via deep power-down and PASR. | Use Scenario: Primary DRAM for head-unit SoCs in automotive infotainment systems requiring AEC-Q200 stress tolerance. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 memory interfacing with NXP i.MX8 or Renesas R-Car processors. Use Value: Supports -40°C to +85°C operation with temperature-adaptive refresh (MR4) and robust signal integrity via differential DQS/CK. |
| Industrial HMI Controller Memory | Edge AI Accelerator Buffer |
Use Scenario: System memory in fanless industrial HMIs running Linux-based GUIs with real-time display updates. IC Role / Device Role / Timing Role: Low-latency, high-reliability DRAM with auto-precharge and tRCD=3 timing for deterministic response. Use Value: Ensures consistent frame buffer access and avoids display tearing through seamless burst reads (tCCD=2) and RL=3 latency. | Use Scenario: On-board buffer memory for FPGA-based edge AI inference accelerators processing sensor fusion data. IC Role / Device Role / Timing Role: High-throughput data staging memory supporting burst writes from ADC streams and burst reads to CNN engines. Use Value: Delivers 1.6 GB/s bandwidth with BL=8 and RL=5 for large tensor transfers while maintaining thermal stability via on-die temperature sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1Gb LPDDR2-1066 (1066 Mbps), 168-ball WFBGA, higher speed grade | Requires tighter tRCD=2.5 timing and different PCB layout due to larger package | Select when >1.6 GB/s bandwidth needed and board supports 168-ball footprint |
| IS42S16160F-6BLI | SDR SDRAM (not LPDDR2), 2.5V core/I/O, no differential clocks or ZQ calibration | Lacks LPDDR2 power features (deep power-down, PASR) and mobile interface compliance | Only suitable for legacy non-mobile designs where LPDDR2 features are unnecessary |
Compared with W97AH6KBVX2E TR, MT42L128M16D1KJ-107 WT:A offers higher bandwidth but demands stricter timing and larger board area, while IS42S16160F-6BLI lacks LPDDR2-specific low-power modes and differential signaling-making it incompatible for battery-powered or JEDEC-compliant mobile designs.
Availability
W97AH6KBVX2E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment DRAM, and industrial HMI controller memory requiring stable component supply across extended product lifecycles.
Supply support for W97AH6KBVX2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted firmware storage.
The W97AH6KBVX2E TR belongs to Winbond's LPDDR2 SDRAM product line, designed specifically for power-constrained mobile and embedded applications requiring JEDEC-compliant low-voltage memory with advanced power management.
FAQ
What is the package type and ball count for W97AH6KBVX2E TR?
W97AH6KBVX2E TR uses a 134-ball Very Fine Pitch BGA (VFBGA) package with 0.4 mm ball pitch and dimensions of 6.4 mm × 8.0 mm × 0.65 mm. This matches JEDEC MO-270AC standard for LPDDR2 x16 devices and is distinct from the 168-ball WFBGA variant used in higher-density or higher-speed versions of the same family.
Does W97AH6KBVX2E TR support ZQ calibration, and how is it implemented?
Yes, W97AH6KBVX2E TR supports ZQ calibration via the dedicated ZQ pin connected to an external 240Ω ±1% resistor. Calibration is performed using MRW commands to MR10 (ZQ init) and MR24 (ZQ short/long), adjusting RONPU and RONPD driver impedances to maintain signal integrity across voltage and temperature variations.
What CAS latency options are available for W97AH6KBVX2E TR, and how are they selected?
W97AH6KBVX2E TR supports CAS latency (RL) of 3 or 5, selected via Mode Register 0 (MR0) bit MA[2]. RL=3 is used for LPDDR2-800 timing with tRCD=3, while RL=5 enables relaxed timing margins for marginal signal integrity conditions-both are fully supported in the W97AH6KBVX2E TR datasheet and validated across industrial temperature range.
Can W97AH6KBVX2E TR operate in deep power-down mode, and what is its typical current draw?
Yes, W97AH6KBVX2E TR supports deep power-down mode with typical current draw below 10 µA at VDD=1.2V and TA=25°C. Entry requires specific command sequences and CKE low assertion; exit latency is defined by tDPD, typically ≤100 µs, preserving full memory state without data loss.
Is partial array self-refresh (PASR) supported on W97AH6KBVX2E TR, and how is it configured?
Yes, W97AH6KBVX2E TR supports PASR using Mode Registers MR16 (bank mask) and MR17 (segment mask) to disable refresh in unused memory regions. This reduces self-refresh current proportionally-for example, masking half the banks cuts IDD6 current by ~40%, verified in the electrical characteristics section of the W97AH6KBVX2E TR datasheet.
W97AH6KBVX2E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- -
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6KBVX2E TR FAQ
1.How can I place an order for W97AH6KBVX2E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6KBVX2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6KBVX2E TR reliable?
The price and inventory of W97AH6KBVX2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6KBVX2E TR is usually 5 days.
3.What payment methods are accepted for W97AH6KBVX2E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6KBVX2E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6KBVX2E TR?
W97AH6KBVX2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6KBVX2E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6KBVX2E TR?
For technical support, including W97AH6KBVX2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6KBVX2E TR requirements.
6.How does Aetrix verify that W97AH6KBVX2E TR is sourced from the original manufacturer or authorized distributors?
All W97AH6KBVX2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6KBVX2E TR meets industry standards.
7.What is the process for return or replacement of W97AH6KBVX2E TR?
All W97AH6KBVX2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6KBVX2E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6KBVX2E TR part is unused and in its original packaging.
Return procedure for W97AH6KBVX2E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6KBVX2E TR Tags
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