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Winbond Electronics Corporation W97AH6KBVX2I
- Part No.:
- W97AH6KBVX2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6KBVX2I.pdf
- Description:
- IC DRAM 1GBIT 134-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,028
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Product details
Overview
W97AH6KBVX2I from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM IC operating at 800 Mbps data rate (400 MHz clock), supporting 16-bit bus width, 1.2V core/VDDQ supply, and industrial temperature range (–40°C to +85°C). It serves as main memory in portable SoC platforms requiring low-power, high-bandwidth memory with partial array self-refresh and ZQ calibration.
For engineers reviewing the W97AH6KBVX2I datasheet, W97AH6KBVX2I pinout, W97AH6KBVX2I application, or W97AH6KBVX2I equivalent, key selection factors include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), 134-ball VFBGA package (6.4 mm × 8.0 mm × 0.6 mm), MR10-based DQ calibration, and PASR bank/segment masking for dynamic power optimization.
Technical Context
This device implements the JEDEC LPDDR2 standard (JESD209-2) with dual-channel 8-bit I/O architecture, on-die termination (ODT) controlled via MR3, and HSUL_12 I/O interface compatible with 1.2V logic. It supports burst lengths of 4 and 8, read latencies RL=3/5, write latencies WL=1, and seamless burst transitions (tCCD = 2).
Power management includes deep power-down (DPD), auto-precharge, per-bank refresh, and temperature-sensor-assisted mode register MR4. Calibration relies on external 240Ω ±1% ZQ resistor and internal MR32/MR40 DQ pattern registers for signal integrity tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 M x 8) organized as 8 banks × 2M rows × 8 columns |
| Data Rate | 800 Mbps (LPDDR2-800), requiring 400 MHz differential CK clock |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V; supports stable operation under battery-voltage droop |
| Operating Temp | –40°C to +85°C (industrial grade), validated for extended thermal cycling |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles, tFAW = 20 ns - defines minimum row activation spacing |
| I/O Interface | HSUL_12 compliant, differential CK/DQS, single-ended CA/CS_n, 16-bit bidirectional DQ bus |
| Refresh Mode | All-bank and per-bank refresh; tREFI = 3.9 μs at 85°C, supports distributed refresh scheduling |
Pinout & Package
W97AH6KBVX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6.4 mm × 8.0 mm × 0.6 mm with 0.5 mm ball pitch. The package is RoHS-compliant and designed for high-density mobile PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Primary timing reference; requires matched trace length and 100Ω differential impedance |
| DQS_t / DQS_c | Differential Strobe Input/Output | Source-synchronous read/write strobe; used for DQ capture alignment and eye-centering |
| CA[0:9] | Command Address Bus | 10-bit multiplexed address/command bus; latched on CK rising edge for all commands |
| CS_n | Chip Select | Active-low enable; must be asserted for command decoding and bank activation |
| CKE | Clock Enable | Controls entry/exit from power-down and self-refresh modes; synchronous to CK |
| DQ[0:15] | Bidirectional Data Bus | 16-bit data path; supports BL=4/8 bursts with programmable drive strength via ZQ calibration |
| DM[0:1] | Data Mask | Byte-level write masking for DQ[7:0] and DQ[15:8]; sampled on write strobe edges |
| VDDQ / VDD | Power Supplies | Separate 1.2V supplies for I/O (VDDQ) and core (VDD); decoupling required per JEDEC LPDDR2 layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | MR16/MR17 enable selective bank/segment retention during self-refresh, reducing current by up to 60% vs full-array mode |
| ZQ Calibration | MR24-initiated on-die impedance tuning using external 240Ω resistor; maintains RONPU/RONPD within ±10% over voltage/temperature |
| Temperature Sensor | Integrated sensor feeds MR4 register; enables dynamic refresh rate adjustment based on die temperature |
| Deep Power-Down (DPD) | Enters ultra-low-current state (<10 μA) with retained data; exit latency <100 μs after CKE assertion |
| HSUL_12 I/O Standard | 1.2V-compatible interface with slew-rate control and programmable drive strength; eliminates need for external termination resistors |
Applications
| Smartphone Application | Tablet SoC Memory |
|---|---|
Use Scenario: Main system memory in ARM-based smartphone SoCs with dual-core or quad-core CPUs running Android OS. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 1.2 GB/s peak bandwidth to CPU/GPU subsystems with dynamic voltage/frequency scaling support. Use Value: Enables fast app launch and multitasking while maintaining sub-30 mA active current at 400 MHz clock frequency. | Use Scenario: Shared memory resource for application processor, GPU, and video decoder in 7–10 inch tablets. IC Role / Device Role / Timing Role: High-efficiency memory buffer supporting simultaneous decode of 1080p H.264 video and UI rendering. Use Value: PASR and DPD modes reduce standby power by 45% compared to standard LPDDR2, extending battery life beyond 10 hours. |
| Automotive Infotainment | Industrial Handheld Terminal |
Use Scenario: Primary memory in automotive-grade infotainment head units requiring AEC-Q200 compliance and extended temperature operation. IC Role / Device Role / Timing Role: Reliable DRAM interfacing with NXP i.MX6 or Renesas R-Car processors under vibration and thermal stress. Use Value: Industrial temp rating (–40°C to +85°C) and robust MR10-based DQ calibration ensure signal integrity across vehicle lifecycle. | Use Scenario: Embedded memory in ruggedized handheld terminals used in warehouse logistics and field service. IC Role / Device Role / Timing Role: Low-latency memory backing real-time Linux OS and barcode scanning firmware with frequent power cycling. Use Value: Fast deep power-down exit (<100 μs) enables instant-on functionality after wake-from-sleep without boot delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16XX-107:J | 1Gb LPDDR2-1066 (533 MHz), 168-ball WFBGA, supports tRCD/tRP = 4 cycles | Higher bandwidth but larger footprint and stricter timing margin requirements | Select when system clock exceeds 400 MHz and board layout accommodates 168-ball package |
| EM6AB160BS-107H | 1Gb LPDDR2-800, 134-ball VFBGA, same pinout but no integrated temperature sensor or MR4 reporting | Lacks temperature-aware refresh; requires external thermal monitoring for high-temp reliability | Choose for cost-sensitive designs where PASR and thermal adaptation are not required |
Compared with MT42L128M16XX-107:J and EM6AB160BS-107H, W97AH6KBVX2I provides tighter tRCD/tRP = 3-cycle timing at LPDDR2-800, native temperature sensing for adaptive refresh, and identical 134-ball VFBGA footprint to EM6AB160BS-107H - making it optimal for space-constrained industrial and mobile designs needing thermal resilience.
Availability
W97AH6KBVX2I is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC integration, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.
Supply support for W97AH6KBVX2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and mobile DRAM for consumer, industrial, and automotive markets.
W97AH6KBVX2I belongs to Winbond's LPDDR2-S4B product line, engineered specifically for low-power, high-reliability mobile and embedded applications demanding JEDEC-compliant timing, thermal adaptability, and compact VFBGA packaging.
FAQ
What is the package type and dimensions of W97AH6KBVX2I?
W97AH6KBVX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6.4 mm × 8.0 mm × 0.6 mm with 0.5 mm ball pitch. This package is optimized for high-density mobile PCB layouts and complies with JEDEC MO-271 standards. The W97AH6KBVX2I pinout matches Winbond's LPDDR2-S4B family specification for 1Gb density in VFBGA configuration.
Does W97AH6KBVX2I support partial array self-refresh (PASR)?
Yes, W97AH6KBVX2I supports Partial Array Self-Refresh via mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective retention of active memory regions during self-refresh. This feature reduces current consumption by up to 60% compared to full-array refresh. The W97AH6KBVX2I implementation is validated per JEDEC JESD209-2 Annex D and operates across its full industrial temperature range.
What ZQ calibration resistor value is required for W97AH6KBVX2I?
W97AH6KBVX2I requires an external 240Ω ±1% precision resistor connected to the ZQ pin for on-die impedance calibration. This resistor sets the reference for RONPU and RONPD driver output resistance tuning, ensuring signal integrity across voltage and temperature variations. The W97AH6KBVX2I datasheet specifies ZQ pad capacitance ≤10 pF and recommends 0402 or 0603 chip resistor placement within 3 mm of the ZQ ball.
What is the maximum data rate supported by W97AH6KBVX2I?
W97AH6KBVX2I supports a maximum data rate of 800 Mbps (LPDDR2-800), corresponding to a 400 MHz differential clock frequency. This is achieved with tRCD = tRP = 3 clock cycles and meets all AC timing parameters defined in the JEDEC LPDDR2 standard JESD209-2. The W97AH6KBVX2I performance is guaranteed across its full industrial temperature range and 1.2V ±5% supply tolerance.
Is W97AH6KBVX2I compatible with LPDDR2-1066 controllers?
No, W97AH6KBVX2I is rated for LPDDR2-800 (400 MHz clock) only and does not meet the timing or electrical specifications required for LPDDR2-1066 operation. Attempting to run W97AH6KBVX2I at 533 MHz violates tRCD/tRP = 3-cycle minimum and may cause data corruption or initialization failure. For LPDDR2-1066, consider alternatives like MT42L128M16XX-107:J - the W97AH6KBVX2I is not a drop-in replacement for that speed grade.
W97AH6KBVX2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- -
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6KBVX2I FAQ
1.How can I place an order for W97AH6KBVX2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6KBVX2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6KBVX2I reliable?
The price and inventory of W97AH6KBVX2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6KBVX2I is usually 5 days.
3.What payment methods are accepted for W97AH6KBVX2I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6KBVX2I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6KBVX2I?
W97AH6KBVX2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6KBVX2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6KBVX2I?
For technical support, including W97AH6KBVX2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6KBVX2I requirements.
6.How does Aetrix verify that W97AH6KBVX2I is sourced from the original manufacturer or authorized distributors?
All W97AH6KBVX2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6KBVX2I meets industry standards.
7.What is the process for return or replacement of W97AH6KBVX2I?
All W97AH6KBVX2I units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6KBVX2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6KBVX2I part is unused and in its original packaging.
Return procedure for W97AH6KBVX2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6KBVX2I Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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Microchip Technology
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