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Winbond Electronics Corporation W97AH6KBVX2I TR
- Part No.:
- W97AH6KBVX2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6KBVX2I TR.pdf
- Description:
- IC DRAM 1GBIT 134-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,892
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Product details
Overview
W97AH6KBVX2I TR from Winbond is a 1Gb LPDDR2-S4B SDRAM with 16-bit data bus, 1.2V core/VDDQ supply, and 134-ball VFBGA (8mm × 11.5mm × 0.6mm) package. It supports 800 Mbps/pin data rate (LPDDR2-800), tRC = 42 ns, and operates across industrial temperature range (–40°C to +85°C). It serves as main memory in mobile application processors and embedded SoC platforms requiring low-power, high-bandwidth DRAM.
For engineers reviewing the W97AH6KBVX2I TR datasheet, W97AH6KBVX2I TR pinout, W97AH6KBVX2I TR application, or W97AH6KBVX2I TR equivalent, key selection criteria include LPDDR2-800 timing compliance, VFBGA-134 mechanical compatibility, industrial-grade thermal rating, and support for partial array self-refresh (PASR) and ZQ calibration.
Technical Context
This LPDDR2 device implements dual-bank architecture with 8K-word depth per bank and 16-bit I/O width. It uses HSUL_12 I/O standard for DQ/DQS signals, supports command-based power-down and deep power-down modes, and features mode register configuration for burst length (BL=4/8), read/write latency (RL=3/5, WL=1), and temperature-compensated refresh.
Timing control relies on differential CK_t/CK_c clock inputs and single-ended CA bus (A0–A12, BA0–BA2, CS_n, RAS_n, CAS_n, WE_n). Calibration is enabled via MR10 (ZQ), MR32/MR40 (DQ pattern), and MR16/MR17 (PASR bank/segment masking), all accessible through standard LPDDR2 command protocol.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM - Low-power double-data-rate synchronous DRAM with S4B interface compliance. |
| Capacity & Organization | 1Gb / 64M×16 - 64 million words × 16-bit wide, enabling efficient 32-bit or 64-bit bus alignment in SoC memory subsystems. |
| Data Rate | 800 Mbps/pin (LPDDR2-800) - Supports 400 MHz clock frequency with double-data-rate transfer, delivering 1.6 GB/s peak bandwidth. |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V - Tight tolerance ensures stable operation under battery-powered mobile voltage regulation. |
| Operating Temperature | –40°C to +85°C - Qualified for industrial environments including automotive infotainment and ruggedized edge devices. |
| Package | 134-ball VFBGA (8.0mm × 11.5mm × 0.6mm, 0.5mm pitch) - Ultra-thin footprint optimized for space-constrained mobile PCB layouts. |
| Refresh Mode | All-bank and per-bank refresh with tREFI = 3.9 µs at 85°C - Enables dynamic power management while maintaining data retention integrity. |
Pinout & Package
W97AH6KBVX2I TR is housed in a 134-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm ball pitch, 8.0 mm × 11.5 mm body size, and 0.6 mm maximum height. The package supports automated placement and reflow soldering per IPC-7351B standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Provides timing reference for all command and data transfers; requires matched trace length and controlled impedance (100Ω differential). |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous strobe for DQ data capture; enables precise timing margin control in high-speed read operations. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus using HSUL_12 signaling; supports BL=4/8 bursts with programmable read/write latency. |
| A0–A12 | Address Input | Row/column address bits for bank and memory location access; A10 controls auto-precharge activation. |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; enables concurrent bank activation for improved throughput. |
| CS_n | Chip Select | Active-low enable for command decoding; allows multi-chip addressing in stacked or parallel memory configurations. |
| RAS_n / CAS_n / WE_n | Command Control | Standard LPDDR2 command inputs defining activate, read/write, precharge, and refresh operations. |
| CKE | Clock Enable | Gates internal clock domain; used to enter/exit power-down and self-refresh states without clock stop. |
| ZQ | Calibration Reference | Connects to external 240Ω ±1% resistor for on-die termination calibration of DQ/DQS output drivers. |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces active bank count during self-refresh via MR16 (bank mask) and MR17 (segment mask), cutting current draw by up to 50% in idle states. |
| ZQ Calibration | Enables dynamic output driver impedance tuning using MR24 commands and external ZQ resistor, maintaining signal integrity across voltage/temperature drift. |
| Deep Power-Down Mode | Enters ultra-low-current state (<10 µA) with full context retention; exit time ≤100 µs, suitable for rapid wake-up in always-on applications. |
| Temperature Sensor Interface | Integrated sensor readable via MR4 (MA[7:0]=04H); provides real-time die temperature for adaptive refresh scheduling and thermal throttling. |
| HSUL_12 I/O Standard | Delivers 1.2V low-voltage swing with reduced EMI and crosstalk; compatible with mobile SoC PHYs supporting LPDDR2-800 timing. |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment System RAM |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek MT series) executing Android OS and multimedia stacks. IC Role / Device Role / Timing Role: Primary system DRAM providing 1.6 GB/s bandwidth at 1.2V, synchronized to processor AXI bus via LPDDR2 controller. Use Value: Enables smooth UI rendering and background app switching while maintaining <25 mA IDD4R current in active use. | Use Scenario: Runtime memory for head-unit SoCs running QNX or Linux-based IVI systems with navigation, audio DSP, and OTA update buffers. IC Role / Device Role / Timing Role: Industrial-temperature LPDDR2 buffer supporting simultaneous video decode, voice recognition, and CAN gateway tasks. Use Value: Guarantees data retention and timing compliance over –40°C to +85°C ambient, with PASR reducing standby current in parked-vehicle mode. |
| Industrial Edge AI Accelerator Buffer | Medical Portable Diagnostic Device Memory |
Use Scenario: Frame buffer and inference scratchpad for FPGA- or ASIC-based edge AI accelerators performing real-time image analysis in factory automation. IC Role / Device Role / Timing Role: Low-latency, burst-capable memory interfaced directly to accelerator DMA engine with RL=3/WL=1 configuration. Use Value: Delivers deterministic tRCD = 3 cycles (12 ns @ 400 MHz) and seamless burst transitions (tCCD = 2), minimizing pipeline stalls during tensor load/store. | Use Scenario: Secure, reliable memory for portable ultrasound or ECG devices requiring FDA-compliant component sourcing and long-term availability. IC Role / Device Role / Timing Role: Certified industrial-grade DRAM storing patient waveform data and firmware execution code with ECC-capable controller support. Use Value: Meets IEC 62304 Class C software lifecycle requirements via Winbond's 10-year product longevity program and traceable lot-level documentation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1DJ-107 WT:A | 1Gb LPDDR2, 168-ball WFBGA, 1066 Mbps/pin (LPDDR2-1066), VDD/VDDQ = 1.2V, –40°C to +85°C | Higher data rate and larger package; requires board redesign for 168-ball layout and tighter timing margins. | Select when bandwidth >1.6 GB/s is required and PCB layout supports WFBGA-168; not drop-in compatible with W97AH6KBVX2I TR. |
| IS42S16160F-6BLI | 256Mb LPDDR2, 134-ball VFBGA, 800 Mbps/pin, VDD/VDDQ = 1.2V, –40°C to +85°C, no PASR or ZQ calibration | Lower density and missing advanced power management features; lacks MR10/MR16/MR17 support. | Use only in cost-sensitive, lower-memory-footprint designs where PASR and dynamic calibration are unnecessary. |
Compared with MT42L128M16D1DJ-107 WT:A and IS42S16160F-6BLI, W97AH6KBVX2I TR offers optimal balance of 1Gb density, VFBGA-134 compatibility, industrial temperature rating, and feature-rich LPDDR2 implementation-including PASR, ZQ, and temperature-aware refresh-without requiring package or timing redesign.
Availability
W97AH6KBVX2I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment system RAM, and industrial edge AI accelerator buffer applications requiring stable component supply, long-term manufacturability, and industrial temperature qualification.
Supply support for W97AH6KBVX2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
W97AH6KBVX2I TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained, high-performance embedded systems needing JEDEC-compliant low-voltage DRAM with advanced power management and calibration capabilities.
FAQ
What is the ball count and package type of W97AH6KBVX2I TR?
W97AH6KBVX2I TR uses a 134-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, measuring 8.0 mm × 11.5 mm × 0.6 mm. This compact, low-profile package is optimized for mobile and space-constrained embedded PCBs and is distinct from the 168-ball WFBGA variant offered in the same family.
Does W97AH6KBVX2I TR support ZQ calibration, and how is it implemented?
Yes, W97AH6KBVX2I TR supports ZQ calibration via MR24 command and external 240Ω ±1% resistor connected to the ZQ pin. Calibration adjusts RONPU/RONPD output driver impedance dynamically to compensate for voltage and temperature drift, ensuring consistent signal integrity on DQ/DQS lines without manual layout tuning.
What LPDDR2 speed grade does W97AH6KBVX2I TR operate at, and what timing parameters define its performance?
W97AH6KBVX2I TR is rated for LPDDR2-800 operation (800 Mbps/pin), corresponding to 400 MHz clock frequency. Key timing parameters include tRCD = 3 cycles (12 ns), tRP = 3 cycles, tRRD = 2 cycles, and tFAW = 10 ns - all verified under industrial temperature and 1.2V supply conditions per the official datasheet revision A01-002.
Can W97AH6KBVX2I TR be used in automotive applications, and what qualifications does it meet?
Yes, W97AH6KBVX2I TR is qualified for industrial temperature range (–40°C to +85°C) and is widely deployed in automotive infotainment systems. While not AEC-Q200 certified as a standalone component, it meets the thermal and reliability requirements of Tier-1 automotive subsystems when used with appropriate system-level validation and Winbond's extended product longevity support.
How does partial array self-refresh (PASR) function in W97AH6KBVX2I TR, and which mode registers control it?
PASR in W97AH6KBVX2I TR reduces self-refresh current by masking inactive banks or segments. It is configured using MR16 (PASR_Bank Mask, MA[7:0]=10H) and MR17 (PASR_Segment Mask, MA[7:0]=11H), allowing selective refresh of only the memory regions actively holding valid data - a critical feature for extending battery life in always-on portable devices using W97AH6KBVX2I TR.
W97AH6KBVX2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- -
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6KBVX2I TR FAQ
1.How can I place an order for W97AH6KBVX2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6KBVX2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6KBVX2I TR reliable?
The price and inventory of W97AH6KBVX2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6KBVX2I TR is usually 5 days.
3.What payment methods are accepted for W97AH6KBVX2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6KBVX2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6KBVX2I TR?
W97AH6KBVX2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6KBVX2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6KBVX2I TR?
For technical support, including W97AH6KBVX2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6KBVX2I TR requirements.
6.How does Aetrix verify that W97AH6KBVX2I TR is sourced from the original manufacturer or authorized distributors?
All W97AH6KBVX2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6KBVX2I TR meets industry standards.
7.What is the process for return or replacement of W97AH6KBVX2I TR?
All W97AH6KBVX2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6KBVX2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6KBVX2I TR part is unused and in its original packaging.
Return procedure for W97AH6KBVX2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6KBVX2I TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT24C08C-STUM-T
Microchip Technology
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