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Winbond Electronics Corporation W97AH6NBVA1E
- Part No.:
- W97AH6NBVA1E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA1E.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,309
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Product details
Overview
W97AH6NBVA1E from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1.2V core/VDDQ supply with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for high-speed mobile memory interfaces in smartphones and tablets.
For engineers reviewing the W97AH6NBVA1E datasheet, W97AH6NBVA1E pinout, W97AH6NBVA1E application, or W97AH6NBVA1E equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR) support, ZQ calibration capability, and HSUL_12 I/O interface compatibility with application processors such as Qualcomm Snapdragon and MediaTek Helio series.
Technical Context
This device implements JEDEC-standard LPDDR2 protocol with dual-channel 16-bit data bus, supports burst lengths of 4 and 8, and uses mode registers MR0–MR63 for configuration including temperature-sensing, DQ calibration (MR32/MR40), and PASR bank/segment masking (MR16/MR17). It requires external 240Ω ±1% ZQ reference resistor for output driver calibration.
Power management includes deep power-down (tDPD = 100ns entry), auto-precharge, and controlled power-off sequences. Initialization mandates tRST minimum of 200ns after VDD/VDDQ stabilization, and supports seamless read/write bursts with tCCD = 2 cycles and tFAW = 40ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128M × 8-bit organization) |
| Data Rate | 800 Mbps/pin (LPDDR2-800, 400 MHz clock) |
| Voltage Supply | 1.2V ±0.06V for VDD/VDDQ; 2.5V for VDD2 (I/O) |
| Burst Length | Configurable BL=4 or BL=8; non-wrap restriction applies |
| tRCD / tRP | 3 clock cycles (12ns @ 400MHz) - defines minimum row-to-column delay and precharge time |
| ZQ Calibration | Supported via MRW command; requires external 240Ω ±1% resistor with ≤5pF capacitive loading |
| Operating Temp | –25°C to +85°C case temperature - validated for mobile handset thermal profiles |
Pinout & Package
W97AH6NBVA1E is housed in a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 10.5 mm × 12.5 mm × 0.8 mm (ball pitch: 0.65 mm), compliant with JEDEC MO-270AB standard. Ball assignment follows LPDDR2-S4B layout with dedicated CA[0:9], DQ[0:15], DQS[0:1]_t/c, CK_t/c, CKE, CS_n, and VREF pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CA[0:9] | Command/Address Bus | 10-bit multiplexed address and command inputs; sampled on CK rising edge |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus using HSUL_12 signaling; supports write data mask (DM) |
| DQS[0:1]_t/c | Differential Strobe | Source-synchronous differential strobes for DQ capture; tDQSCKmin = –0.25tCK, tDQSCKmax = +0.5tCK |
| CK_t/c | Differential Clock | Primary system clock input; 400 MHz max frequency; used for all timing references |
| CKE | Clock Enable | Active-high input controlling power-down and self-refresh entry/exit |
| CS_n | Chip Select | Active-low signal enabling command decoding; must be stable before command latch |
| VREF | Reference Voltage | 0.6V ±1% internal reference for CA/DQ input threshold; externally bypassed |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 Compliance | Fully conforms to JEDEC JESD209-2A specification with tRCD/tRP = 3, tCCD = 2, tFAW = 40ns |
| Partial Array Self-Refresh (PASR) | Reduces active bank count during self-refresh via MR16 (bank mask) and MR17 (segment mask) |
| ZQ Calibration | Dynamic RONPU/RONPD adjustment using external 240Ω resistor; supports long/short calibration modes |
| Temperature Sensor | On-die sensor accessible via MR4 (MA[7:0]=04H); enables thermal-aware refresh scheduling |
| HSUL_12 I/O Interface | Low-voltage swing (0.35V) differential signaling compatible with mobile AP memory controllers |
Applications
| Smartphone Main Memory | Tablet System Memory |
|---|---|
Use Scenario: Primary working memory for ARM-based application processors in sub-6-inch smartphones with <2GB total RAM requirement. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit × 800 Mbps interface synchronized to 400 MHz CK; handles burst reads/writes with tRTP = 2–3 cycles. Use Value: Enables low-latency UI rendering and app switching while maintaining 1.2V operation for battery efficiency. | Use Scenario: Shared system memory in 7–10 inch Android tablets requiring balanced bandwidth and power for multimedia playback. IC Role / Device Role / Timing Role: Dual-bank LPDDR2 device supporting seamless burst transfers (tCCD = 2) and auto-precharge for continuous video decode buffers. Use Value: Delivers 1.6 GB/s peak bandwidth with deep power-down support to extend standby time beyond 72 hours. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Memory subsystem in AEC-Q200 qualified infotainment head units running Linux-based IVI platforms. IC Role / Device Role / Timing Role: Temperature-compensated SDRAM using MR4 sensor feedback and PASR to reduce refresh current in cabin ambient up to 85°C. Use Value: Maintains data integrity across –25°C to +85°C without external thermal management overhead. | Use Scenario: Embedded display controller memory in factory-floor HMIs with extended lifecycle and no fan cooling. IC Role / Device Role / Timing Role: High-reliability LPDDR2 device with ZQ calibration and robust CKE-intensive power-down handling per JEDEC spec. Use Value: Ensures consistent timing margin under voltage ripple and thermal cycling in unregulated 12V DC environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1Gb LPDDR2-1066 (533 MHz), 1.2V, 136-ball VFBGA; higher speed grade but identical pinout and command set | Supports faster processor interfaces (e.g., Exynos 4 Quad); requires tighter tDQSCK timing control | Select when system clock exceeds 400 MHz and board layout supports improved signal integrity. |
| IS42S16100E-6BLI | 1Gb LPDDR2-667 (333 MHz), 1.2V, 136-ball VFBGA; lower speed grade, no MR32/MR40 DQ calibration registers | Limited to legacy APs with relaxed timing margins; lacks temperature-sensor and PASR features | Choose for cost-sensitive designs where thermal management and power optimization are secondary. |
Compared with MT42L128M16D1KJ-107 WT:A and IS42S16100E-6BLI, W97AH6NBVA1E offers optimal balance of LPDDR2-800 performance, on-die temperature sensing, and ZQ calibration - making it suitable for mid-tier mobile and industrial designs requiring verified timing margin and thermal adaptability without over-spec'ing speed.
Availability
W97AH6NBVA1E is available at Aetrix Electronics and suitable for smartphone main memory, tablet system memory, and automotive infotainment applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2 interoperability.
Supply support for W97AH6NBVA1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W97AH6NBVA1E belongs to Winbond's LPDDR2-S4B product line, designed specifically for space-constrained, power-sensitive mobile platforms requiring JEDEC-standard low-power double-data-rate memory with advanced power management and calibration features.
FAQ
What is the ball count and package type of W97AH6NBVA1E?
W97AH6NBVA1E uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package per JEDEC MO-270AB, with 0.65 mm ball pitch and 10.5 mm × 12.5 mm footprint. This matches LPDDR2-S4B mechanical specifications and ensures compatibility with standard mobile PCB assembly processes.
Does W97AH6NBVA1E support ZQ calibration, and what external component is required?
Yes, W97AH6NBVA1E supports both short and long ZQ calibration via MRW commands. It requires an external 240Ω ±1% precision resistor connected to the ZQ pin, with total capacitive loading limited to ≤5 pF, as specified in section 7.4.24.5 of the datasheet.
What is the minimum tRST requirement for W97AH6NBVA1E during power-up initialization?
W97AH6NBVA1E requires a minimum reset pulse width (tRST) of 200 ns after VDD and VDDQ reach stable regulation. This timing must be met before issuing any command, including MRS or ZQ calibration, to ensure reliable mode register programming and internal state initialization.
Can W97AH6NBVA1E operate in partial array self-refresh (PASR) mode, and how is it configured?
Yes, W97AH6NBVA1E supports PASR to reduce self-refresh current by masking inactive banks or segments. Configuration is done through mode registers MR16 (PASR_Bank Mask) and MR17 (PASR_Segment Mask), both accessed via MA[7:0] = 10H and 11H respectively, as defined in sections 7.3.13 and 7.3.14.
What JEDEC standard does W97AH6NBVA1E comply with, and which timing parameters define its LPDDR2-800 grade?
W97AH6NBVA1E complies with JEDEC JESD209-2A for LPDDR2. Its LPDDR2-800 grade is defined by tRCD = 3 cycles, tRP = 3 cycles, tCCD = 2 cycles, and tFAW = 40 ns - all verified at 400 MHz clock frequency and 1.2V supply per section 7.4.1.1 and Table 7.4.1.2.
W97AH6NBVA1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA1E FAQ
1.How can I place an order for W97AH6NBVA1E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA1E reliable?
The price and inventory of W97AH6NBVA1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA1E is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA1E?
W97AH6NBVA1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA1E?
For technical support, including W97AH6NBVA1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA1E requirements.
6.How does Aetrix verify that W97AH6NBVA1E is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA1E meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA1E?
All W97AH6NBVA1E units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA1E part is unused and in its original packaging.
Return procedure for W97AH6NBVA1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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