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Winbond Electronics Corporation W97AH6NBVA1E TR
- Part No.:
- W97AH6NBVA1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA1E TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,336
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Product details
Overview
W97AH6NBVA1E TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 11.5mm, 0.5mm pitch), operating at 800 Mbps data rate (400 MHz clock) with 1.2V core/VDDQ and 1.8V VDD2 supply. It supports burst lengths of 4/8, CAS latency 3/5, partial array self-refresh (PASR), ZQ calibration, and temperature-sensing mode register access for power-optimized mobile SoC memory subsystems.
For engineers reviewing the W97AH6NBVA1E TR datasheet, W97AH6NBVA1E TR pinout, W97AH6NBVA1E TR application, or W97AH6NBVA1E TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, tRRD = 2), HSUL_12 I/O interface, bank masking capability (MR16/MR17), and deep power-down entry/exit timing under CKE-intensive environments.
Technical Context
This LPDDR2 device implements dual-channel 16-bit wide x4 internal organization (64M × 16), supporting 1.2V core operation with differential CK_t/CK_c and DQS_t/DQS_c signaling. Its command interface includes activate, read/write, precharge, refresh, and mode register write/read commands, with full support for auto-precharge, burst terminate, and seamless burst transitions (tCCD = 2).
Power management features include three low-power states: power-down (entry/exit within 1–2 clocks), deep power-down (retention loss, ~1μA IDD6), and self-refresh with PASR bank/segment masking. Calibration relies on external 240Ω ±1% ZQ resistor and internal MR10-based DQ calibration patterns (MR32/MR40).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (64M × 16) - supports 128 MB of 16-bit-wide LPDDR2 memory space per device. |
| Data Rate | 800 Mbps (400 MHz clock) - enables high-bandwidth mobile graphics and application processor interfaces. |
| Voltage Supplies | VDD/VDDQ = 1.2V ±0.06V; VDD2 = 1.8V ±0.1V - requires dual-rail PMIC support for LPDDR2 compliance. |
| CAS Latency | CL = 3 or 5 (configurable via MR0) - determines minimum read-to-data-valid delay in clock cycles. |
| Burst Length | BL = 4 or 8 (MR1.BT/BL bits) - defines number of consecutive data transfers per read/write command. |
| tRCD / tRP | 3 × tCK (1.25 ns @ 400 MHz) - sets minimum row-active-to-column-access and row-precharge delays. |
| ZQ Calibration | Supported via MRW to MR10 - adjusts output driver impedance (RONPU/RONPD) using external 240Ω reference resistor. |
Pinout & Package
W97AH6NBVA1E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 11.5 mm with 0.5 mm ball pitch and standard LPDDR2 ball assignment per JEDEC JESD209-2A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Edge-triggered system clock pair; CK_t rising edge initiates all command and data transfers. |
| DQS_t / DQS_c | Differential strobe input/output | Source-synchronous data strobe aligned with DQ edges; used for read capture and write leveling. |
| CA[0:5] | Command/address bus | 6-bit multiplexed command/address bus carrying mode register writes, bank activates, and precharge targets. |
| DQ[0:15] | Data I/O bus | 16-bit bidirectional data bus using HSUL_12 signaling; supports 800 Mbps with controlled slew rates. |
| DM[0:1] | Data mask input | Per-byte write mask signals enabling selective byte disable during burst write operations. |
| CKE | Clock enable | Asynchronous active-high signal controlling entry/exit from power-down and self-refresh modes. |
| VDD / VDDQ | Core/I/O supply | 1.2V supplies powering logic core and HSUL_12 I/O buffers; decoupling required per JEDEC layout guidelines. |
| VDD2 | Analog auxiliary supply | 1.8V supply for internal voltage references, temperature sensor, and ZQ calibration circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 Timing Compliance | Fully compliant with JEDEC JESD209-2A tRCD = 3, tRP = 3, tRRD = 2, tFAW = 10 at 400 MHz clock. |
| Partial Array Self-Refresh (PASR) | Configurable bank-level (MR16) and segment-level (MR17) retention control reduces self-refresh current by >50%. |
| Temperature-Aware Calibration | MR4_Device Temperature (MA=04H) reports die temperature; enables dynamic MR10 recalibration under thermal drift. |
| ZQ Impedance Calibration | Supports long/short ZQ calibration (MRW to MR24) with external 240Ω ±1% resistor for RONPU/RONPD tuning. |
| Deep Power-Down Mode | IDD6 ≤ 1 μA typical; retains no data but enables ultra-low standby power in battery-critical mobile sleep states. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring low-voltage, high-bandwidth DRAM. IC Role / Device Role / Timing Role: LPDDR2 SDRAM serving as primary working memory with CAS latency 3 timing and burst length 8 reads. Use Value: Enables 6.4 GB/s peak bandwidth per 16-bit channel at 1.2V, reducing SoC power consumption versus DDR2/DDR3. |
Use Scenario: Dedicated frame buffer for Mali or Adreno GPUs in Android tablets, supporting concurrent rendering and display output. IC Role / Device Role / Timing Role: Dual-bank interleaved memory accessed via AXI master interface with auto-precharge and seamless burst reads. Use Value: tCCD = 2 and RL=3 allow rapid switching between render and display fetch bursts without pipeline stalls. |
| Automotive Infotainment RAM | IoT Edge AI Accelerator Buffer |
|
Use Scenario: Memory subsystem for QNX- or Android Automotive-based head units with extended temperature operation requirements. IC Role / Device Role / Timing Role: LPDDR2 device operating across –25°C to +85°C with MR4-reported temperature feedback for thermal throttling. Use Value: PASR and deep power-down reduce idle power to <5 μA, meeting automotive ASIL-B functional safety standby budgets. |
Use Scenario: On-device inference buffer for micro-NPU co-processors in battery-powered smart cameras and voice assistants. IC Role / Device Role / Timing Role: Low-latency memory accessed via AXI-Lite or APB bridge with burst-length-4 writes and CL=3 reads. Use Value: ZQ calibration and DQ pattern MR32/MR40 ensure signal integrity at 800 Mbps over compact PCB layouts with limited routing layers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1Gb LPDDR2, 1066 Mbps (533 MHz), 136-ball VFBGA, same voltage rails but tighter tRCD/tRP = 2.5 cycles. | Requires higher-speed PCB layout (≤5 ps skew), stricter VREF tolerance (±1%), and faster PMIC response. | Select when bandwidth >8.5 GB/s is required and board design supports LPDDR2-1066 timing margins. |
| IS42S16160F-6BLI | 1Gb LPDDR2, 800 Mbps, 136-ball VFBGA, but lacks PASR, temperature reporting, and ZQ calibration registers. | No MR4/MR10/MR16 support; requires external impedance tuning and fixed refresh scheduling. | Choose for cost-sensitive designs where thermal adaptation and fine-grained power control are not required. |
Compared with MT42L128M16D1KJ-107 WT:A and IS42S16160F-6BLI, W97AH6NBVA1E TR delivers balanced performance with integrated thermal awareness, programmable power gating, and production-ready ZQ calibration-making it optimal for mid-tier mobile and embedded platforms where reliability and layout simplicity outweigh peak bandwidth needs.
Availability
W97AH6NBVA1E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment RAM requiring stable component supply across industrial temperature ranges and long product lifecycles.
Supply support for W97AH6NBVA1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W97AHxNB series targets LPDDR2 memory applications in portable electronics, emphasizing JEDEC-compliant timing, multi-level power management, and robust signal integrity for high-density mobile PCBs.
FAQ
What is the maximum data rate supported by W97AH6NBVA1E TR?
W97AH6NBVA1E TR supports a maximum data rate of 800 Mbps, corresponding to a 400 MHz clock frequency. This is validated under JEDEC JESD209-2A LPDDR2-800 specifications with tRCD = 3, tRP = 3, and tRRD = 2 clock cycles. The device does not support LPDDR2-1066 operation; attempting higher frequencies violates AC timing limits and may cause read/write failures.
Does W97AH6NBVA1E TR support partial array self-refresh (PASR)?
Yes, W97AH6NBVA1E TR supports PASR via mode registers MR16 (bank mask) and MR17 (segment mask). This allows selective retention of active memory banks or segments during self-refresh, reducing current draw by up to 60% compared to full-array refresh. Configuration is performed through MRW commands to MA[7:0] = 10H and 11H.
What external component is required for ZQ calibration on W97AH6NBVA1E TR?
W97AH6NBVA1E TR requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSSQ to perform ZQ calibration. This resistor sets the reference for RONPU and RONPD output driver impedance tuning. Deviations beyond ±1% tolerance result in noncompliant HSUL_12 output swing and timing margin violations.
Can W97AH6NBVA1E TR operate across the full industrial temperature range?
W97AH6NBVA1E TR is rated for operation from –25°C to +85°C ambient temperature. Its MR4_Device Temperature register (MA=04H) provides real-time die temperature readback, enabling thermal-aware refresh rate adjustment and system-level throttling. Operation outside this range is not characterized and may cause data retention or timing failure.
What is the purpose of the VDD2 supply pin on W97AH6NBVA1E TR?
VDD2 supplies 1.8V to internal analog circuits including the temperature sensor, ZQ calibration engine, and reference voltage generators. It must be independently decoupled and remain stable during deep power-down mode. Unlike VDD/VDDQ, VDD2 remains powered during most low-power states to preserve calibration state and thermal monitoring capability.
W97AH6NBVA1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA1E TR FAQ
1.How can I place an order for W97AH6NBVA1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA1E TR reliable?
The price and inventory of W97AH6NBVA1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA1E TR is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA1E TR?
W97AH6NBVA1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA1E TR?
For technical support, including W97AH6NBVA1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA1E TR requirements.
6.How does Aetrix verify that W97AH6NBVA1E TR is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA1E TR meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA1E TR?
All W97AH6NBVA1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA1E TR part is unused and in its original packaging.
Return procedure for W97AH6NBVA1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6NBVA1E TR Tags
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M24C02-WMN6TP
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