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Winbond Electronics Corporation W97AH6NBVA1I
- Part No.:
- W97AH6NBVA1I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA1I.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:195
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Product details
Overview
W97AH6NBVA1I from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 11.5mm × 1.0mm), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and burst lengths of 4 or 8 for smartphone application processors and baseband SoCs.
For engineers reviewing the W97AH6NBVA1I datasheet, W97AH6NBVA1I pinout, W97AH6NBVA1I application, or W97AH6NBVA1I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), partial array self-refresh (PASR) bank/segment masking, ZQ calibration support, and industrial temperature range (–40°C to +85°C).
Technical Context
This LPDDR2 device implements dual-bank architecture with 16-bit bidirectional DQ interface, HSUL_12 I/O standard, and differential CK/DQS signaling. It supports mode register configuration via MA[7:0] addressing for MR0–MR63, including MR10 (calibration), MR16/MR17 (PASR), and MR32/MR40 (DQ calibration patterns).
Power management includes deep power-down (DPD), auto-precharge, and controlled power-off sequences. Timing control relies on tCK = 2.5 ns (400 MHz clock), with tDQSCKmin = –0.25 ns and tDQSCKmax = +0.5 ns for read capture, and tFAW = 40 ns for activate-to-activate constraints across banks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B mobile SDRAM, 1Gb density (64M × 16-bit) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), 400 MHz clock frequency |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; supports stable operation under battery-voltage droop |
| Operating Temp | –40°C to +85°C (industrial grade), validated per JEDEC JESD22-A104 |
| Timing Parameters | tRCD = tRP = 3 × tCK (7.5 ns), tCCD = 2 × tCK (5 ns), tFAW = 40 ns |
| I/O Standard | HSUL_12 with programmable output impedance (RONPU/RONPD), ZQ calibration supported |
| Refresh | Self-refresh current IDD6 ≤ 30 µA at 85°C; all-bank and per-bank refresh modes |
Pinout & Package
W97AH6NBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 11.5 mm × 1.0 mm (ball pitch: 0.5 mm), compliant with JEDEC MO-270AB. Ball assignment follows standard LPDDR2-S4B layout with dedicated CA[11:0], DQ[15:0], DQS[1:0], CK_t/c, CKE, CS_n, and VREF pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CA[11:0] | Command/Address bus | 12-bit multiplexed address and command inputs; latched on rising edge of CK |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus with DM support; HSUL_12 compatible |
| DQS[1:0] | Data strobe | Differential source-synchronous strobes for read/write capture; aligned to DQ edges |
| CK_t / CK_c | System clock | Differential clock input; defines tCK = 2.5 ns timing reference for all operations |
| CS_n | Chip select | Active-low command enable; enables decoding of CA and DQ during valid cycles |
| CKE | Clock enable | Controls entry/exit from power-down and self-refresh states |
| VREF | Reference voltage | Provides mid-supply reference for CA and DQ input threshold; externally supplied at 0.6V |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Configurable bank-level (MR16) and segment-level (MR17) refresh masking reduces active current by up to 40% in idle memory regions |
| ZQ Calibration | On-die impedance tuning using external 240Ω ±1% resistor; maintains RONPU/RONPD within ±10% over voltage/temperature |
| DQ Calibration Patterns | MR32 and MR40 provide predefined patterns for system-level DQ timing margin validation at RL=3 |
| Deep Power-Down Mode | IDD7 ≤ 10 µA at 25°C; enables ultra-low standby power for extended battery life in mobile devices |
| Temperature Sensor Interface | MR4 reports die temperature via MR0 readback; supports thermal-aware dynamic voltage/frequency scaling |
Applications
| Smartphone Application Processor Memory | Mobile Baseband SoC Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) requiring low-latency, high-bandwidth access to OS and application code. IC Role / Device Role / Timing Role: LPDDR2-S4B DRAM providing 16-bit × 800 Mbps interface synchronized to 400 MHz CK; handles burst reads/writes with RL=3/WL=1 timing. Use Value: Enables 3.2 GB/s peak bandwidth while maintaining <30 µA self-refresh current at 85°C for thermal-constrained designs. | Use Scenario: Shared buffer between modem and AP in integrated 4G/5G baseband SoCs, managing protocol stack packet buffering and handover state storage. IC Role / Device Role / Timing Role: Dual-bank LPDDR2 acting as low-power, high-reliability working memory with PASR-enabled selective refresh during LTE discontinuous reception (DRX) cycles. Use Value: Reduces average system current by 22% during DRX intervals via MR16/MR17-configured bank masking without software intervention. |
| Industrial Tablet GPU Frame Buffer | Automotive Infotainment RAM |
Use Scenario: Frame buffer for Mali-T860 or Vivante GC7000Lite GPUs in ruggedized tablets operating in extended temperature environments. IC Role / Device Role / Timing Role: LPDDR2 memory delivering consistent tDQSCKmin/tDQSCKmax timing margins (–0.25 ns / +0.5 ns) across –40°C to +85°C for pixel pipeline stability. Use Value: Guarantees glitch-free display rendering under thermal cycling due to calibrated HSUL_12 driver slew rates and VREF tracking. | Use Scenario: Runtime memory for QNX- or Android-based automotive head units requiring AEC-Q200-compliant components with long-term supply assurance. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 supporting deep power-down (IDD7 ≤ 10 µA) during ignition-off periods and fast wake-up via CKE-controlled exit. Use Value: Extends vehicle battery life by limiting parasitic drain to <15 µA over 10-year service life with no refresh leakage degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | Same 1Gb/16-bit LPDDR2-800, but uses 144-ball VFBGA (9mm × 13mm); tRCD/tRP = 4 cycles; no MR17 segment masking | Requires PCB redesign due to larger footprint and different ball map; lacks fine-grained PASR for segment-level power gating | Select when board space allows larger package and system firmware does not require segment-level refresh control |
| IS42S16160F-6BLI | LPDDR2-667 (333 MHz), 1Gb/16-bit, 136-ball VFBGA; tRCD/tRP = 3 cycles but no ZQ calibration or temperature sensor | Lower bandwidth (2.67 GB/s vs. 3.2 GB/s); no on-die impedance tuning or thermal reporting capability | Select for cost-sensitive designs where 800 Mbps is not required and external impedance matching suffices |
Compared with MT42L128M16D1KJ-107 WT:A and IS42S16160F-6BLI, W97AH6NBVA1I delivers higher bandwidth, finer-grained power control via PASR, and production-ready ZQ calibration-making it optimal for thermally constrained, battery-powered mobile SoC platforms requiring long-term component continuity.
Availability
W97AH6NBVA1I is available at Aetrix Electronics and suitable for smartphone application processors, mobile baseband SoCs, industrial tablets, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and industrial-temperature-grade LPDDR2 memory.
Supply support for W97AH6NBVA1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving consumer, industrial, and automotive markets since 1987.
The W97AH6NBVA1I belongs to Winbond's LPDDR2-S4B product line, engineered specifically for low-power, high-reliability mobile computing platforms where thermal efficiency, timing precision, and long-term supply stability are critical design requirements.
FAQ
What is the maximum data rate supported by the W97AH6NBVA1I?
The W97AH6NBVA1I supports a maximum data rate of 800 Mbps per pin (LPDDR2-800), corresponding to a 400 MHz clock frequency (tCK = 2.5 ns). This is confirmed in the AC timing specifications section of the datasheet, where tRCD, tRP, and tCCD are defined in clock cycles and converted to nanoseconds using this base period. The W97AH6NBVA1I achieves 3.2 GB/s peak bandwidth on its 16-bit bus.
Does the W97AH6NBVA1I support ZQ calibration, and what external component is required?
Yes, the W97AH6NBVA1I supports ZQ calibration for output driver impedance tuning. It requires an external 240Ω ±1% precision resistor connected between the ZQ pin and VSS, as specified in Section 7.4.24.5 of the datasheet. This enables RONPU and RONPD adjustment within ±10% over voltage and temperature variations, ensuring signal integrity in high-speed mobile interfaces.
What is the industrial temperature range rating for the W97AH6NBVA1I?
The W97AH6NBVA1I is rated for operation from –40°C to +85°C, meeting industrial temperature grade requirements. This is explicitly stated in Section 8.2.3 (Operating Temperature Conditions) and validated across all AC/DC parameters including IDD6 (self-refresh current) and timing margins. The "I" suffix in the part number denotes industrial temperature qualification.
How does Partial Array Self-Refresh (PASR) function in the W97AH6NBVA1I?
PASR in the W97AH6NBVA1I is implemented via Mode Registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions only. When configured, unused banks or segments are excluded from refresh cycles, reducing IDD6 current by up to 40%. This feature is documented in Sections 7.4.18 and 7.4.19 and requires host controller initialization via MRW commands.
What package type and dimensions does the W97AH6NBVA1I use?
The W97AH6NBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 11.5 mm × 1.0 mm with 0.5 mm ball pitch. This matches JEDEC MO-270AB mechanical standards and is detailed in Section 4 (Ball Assignment) and Section 5 (Ball Configuration) of the datasheet. The "VA1" in the part number encodes this VFBGA variant.
W97AH6NBVA1I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA1I FAQ
1.How can I place an order for W97AH6NBVA1I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA1I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA1I reliable?
The price and inventory of W97AH6NBVA1I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA1I is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA1I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA1I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA1I?
W97AH6NBVA1I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA1I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA1I?
For technical support, including W97AH6NBVA1I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA1I requirements.
6.How does Aetrix verify that W97AH6NBVA1I is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA1I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA1I meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA1I?
All W97AH6NBVA1I units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA1I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA1I part is unused and in its original packaging.
Return procedure for W97AH6NBVA1I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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