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Winbond Electronics Corporation W97AH6NBVA1I TR
- Part No.:
- W97AH6NBVA1I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA1I TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,617
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Product details
Overview
W97AH6NBVA1I TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for high-speed mobile memory subsystems in smartphones and tablets.
For engineers reviewing the W97AH6NBVA1I TR datasheet, W97AH6NBVA1I TR pinout, W97AH6NBVA1I TR application, or W97AH6NBVA1I TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), PASR bank/segment masking, ZQ calibration support, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
This LPDDR2 device implements dual-bank architecture with 8 internal banks, supports burst lengths of 4 and 8, and uses HSUL_12 I/O standard for DQ/DM/DQS signals with differential clock (CK_t/CK_c) and strobe (DQS_t/DQS_c). It requires mode register programming for configuration including MR0–MR10, MR16–MR17, MR32, MR40, and MR63.
Power management includes active power-down, deep power-down, self-refresh, and partial array self-refresh (PASR) with bank and segment masking. Initialization mandates controlled power ramp, CKE assertion timing, and mode register write (MRW) sequences per JEDEC JESD209-2A specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM, 1Gb density (128M × 8-bit × 1 bank group) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), tCK = 2.5 ns minimum cycle time |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; supports 1.14V–1.26V operation with defined IDD limits |
| Operating Temp | Industrial grade: –40°C to +85°C case temperature (Tc) |
| Burst Length | Configurable BL = 4 or 8; supports seamless burst read/write with tCCD = 2 |
| Refresh Interval | Self-refresh exit time tRFC = 160 ns max; tREFI = 3.9 μs typical at 85°C |
| I/O Standard | HSUL_12 for DQ/DM/DQS; differential CK_t/CK_c and DQS_t/DQS_c with 250 mV min swing |
| ZQ Calibration | Supports ZQINIT, ZQSHORT, ZQLONG, and ZQRESET per JEDEC; RZQ = 240 Ω ± 1% |
Pinout & Package
Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm body, 0.5 mm ball pitch, RoHS-compliant, moisture sensitivity level 3 (MSL3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O supply | Separate 1.2V supplies; decoupling required per JEDEC layout guidelines |
| VSS | Digital ground | Common reference for all digital I/O and core logic; low-inductance connection critical |
| CK_t / CK_c | Differential clock input | LVDS-compatible; defines system timing reference; must meet tSKW skew spec |
| DQS_t / DQS_c | Differential strobe I/O | Source-synchronous read/write strobe; used for DQ capture alignment |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus; HSUL_12 driver with programmable ODT |
| DM[1:0] | Data mask | Byte-level write masking for DQ[7:0] and DQ[15:8]; active-high during write |
| CA[5:0] | Command/address bus | 6-bit multiplexed command/address; sampled on CK rising edge; CA[5] = CS_n |
| CKE | Clock enable | Asynchronous active-high; controls entry/exit from power-down states |
| RESET_n | Asynchronous reset | Active-low; initiates device initialization sequence when asserted during power-up |
Key Features
| Feature | Design Value |
|---|---|
| On-die termination (ODT) | Programmable pull-up/pull-down resistors per DQ/DM/DQS; eliminates external termination components |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 50% by masking inactive banks/segments via MR16/MR17 |
| ZQ calibration | Dynamic output impedance tuning using external 240 Ω resistor; maintains signal integrity across voltage/temperature |
| Temperature sensor | Integrated sensor (MR4) enables thermal-aware refresh rate adjustment and system thermal management |
| Deep power-down mode | Ultra-low standby current (IDD6 < 10 μA); retains configuration but loses DRAM contents |
| Mode register read (MRR) | Allows runtime verification of MR settings (e.g., MR0 device info, MR1 features) without halting operation |
Applications
| Smartphone Application | Tablet Memory Subsystem |
|---|---|
Use Scenario: Main application memory in mid-tier Android smartphones with ARM Cortex-A53/A55 SoCs. IC Role / Device Role / Timing Role: LPDDR2-800 SDRAM providing 1.28 GB/s bandwidth to SoC memory controller over 16-bit interface. Use Value: Enables smooth UI rendering and multitasking within 1.2V power envelope; PASR reduces battery drain during background app refresh. | Use Scenario: Primary memory in 7–10 inch tablets requiring extended battery life and thermal headroom. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 component supporting burst-optimized read/write with tRCD = 3 cycles. Use Value: ZQ calibration maintains signal integrity across wide temperature range; deep power-down extends standby time beyond 72 hours. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Graphics frame buffer and OS memory in automotive-grade infotainment units meeting AEC-Q200 stress requirements. IC Role / Device Role / Timing Role: Industrial-temp LPDDR2 SDRAM interfacing with NXP i.MX6/i.MX8 MPU via 16-bit LPDDR2 PHY. Use Value: –40°C to +85°C operation ensures reliability in vehicle cabin environments; MR4 temperature reporting aids thermal throttling. | Use Scenario: Memory for real-time HMI controllers in factory automation panels with fanless enclosure constraints. IC Role / Device Role / Timing Role: Low-power mobile SDRAM supporting deterministic latency for GUI rendering and data logging buffers. Use Value: Deep power-down and self-refresh modes reduce average power to < 50 mW; VFBGA package enables compact PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1DJ-107 WT:A | 1Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V, 134-ball VFBGA (7.5×13mm); different ball map and tRCD = 4 | Higher bandwidth but tighter timing margins; requires updated PCB layout and controller timing setup | Select only if system demands >800 Mbps/pin and controller supports RL=4/WL=2 |
| IS42S16160F-6BLI | 1Gb LPDDR2-800 in 134-ball VFBGA; no PASR or ZQ calibration; industrial temp; lacks MR4 temperature sensor | Lower feature set; suitable for cost-sensitive designs where thermal management and power optimization are secondary | Prefer W97AH6NBVA1I TR when PASR, ZQ, or temperature-aware refresh are required |
Compared with MT42L128M16D1DJ-107 WT:A and IS42S16160F-6BLI, the W97AH6NBVA1I TR provides balanced performance, advanced power management (PASR, deep power-down), and calibrated I/O integrity (ZQ), making it optimal for thermally constrained mobile and industrial applications where layout reuse and long-term supply stability matter.
Availability
W97AH6NBVA1I TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet application processors, and automotive infotainment units requiring stable component supply, long-lifecycle support, and industrial temperature grade assurance.
Supply support for W97AH6NBVA1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, serving consumer, industrial, and automotive markets since 1987.
The W97AH6NBVA1I TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile and embedded systems needing JEDEC-compliant low-voltage DRAM with advanced power-state control and calibration features.
FAQ
What is the ball count and package type of the W97AH6NBVA1I TR?
The W97AH6NBVA1I TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.5 mm ball pitch. This package meets JEDEC MO-270DA standards and is qualified for industrial temperature operation (–40°C to +85°C). The W97AH6NBVA1I TR ball assignment is documented in Section 4 of its official datasheet (Rev. A01-003).
Does the W97AH6NBVA1I TR support ZQ calibration, and what external component is required?
Yes, the W97AH6NBVA1I TR supports full ZQ calibration including ZQINIT, ZQSHORT, ZQLONG, and ZQRESET commands. It requires an external 240 Ω ±1% precision resistor connected between ZQ pin and VSS, with ≤1 pF capacitive loading, as specified in Section 7.4.24.5 of the W97AH6NBVA1I TR datasheet.
What are the supported burst lengths and read/write latencies for the W97AH6NBVA1I TR?
The W97AH6NBVA1I TR supports burst lengths of 4 and 8, with configurable read latency (RL) of 3 or 5 and write latency (WL) of 1 or 2. At LPDDR2-800 speed, the standard configuration is RL = 3 and WL = 1, yielding tRCD = 3 and tRP = 3 clock cycles - values confirmed in Section 7.4.1.1 of the W97AH6NBVA1I TR datasheet.
How does Partial Array Self-Refresh (PASR) function in the W97AH6NBVA1I TR?
PASR in the W97AH6NBVA1I TR allows selective refresh of active memory regions only, reducing self-refresh current by up to 50%. It is enabled via mode registers MR16 (bank mask) and MR17 (segment mask), both accessible through standard MRW commands. This feature is validated in Sections 7.4.18–7.4.19 of the W97AH6NBVA1I TR datasheet and requires host controller support.
Is the W97AH6NBVA1I TR compatible with standard LPDDR2 controllers compliant with JEDEC JESD209-2A?
Yes, the W97AH6NBVA1I TR fully complies with JEDEC JESD209-2A for LPDDR2-S4B devices. It supports all mandatory commands (ACT, READ, WRITE, PRE, REF, SRE, DPDE), timing parameters, and electrical specifications defined in the standard. Controller compatibility is confirmed by Winbond's published interoperability reports and validation with major SoC vendors' LPDDR2 PHYs.
W97AH6NBVA1I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA1I TR FAQ
1.How can I place an order for W97AH6NBVA1I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA1I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA1I TR reliable?
The price and inventory of W97AH6NBVA1I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA1I TR is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA1I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA1I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA1I TR?
W97AH6NBVA1I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA1I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA1I TR?
For technical support, including W97AH6NBVA1I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA1I TR requirements.
6.How does Aetrix verify that W97AH6NBVA1I TR is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA1I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA1I TR meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA1I TR?
All W97AH6NBVA1I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA1I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA1I TR part is unused and in its original packaging.
Return procedure for W97AH6NBVA1I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6NBVA1I TR Tags
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