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Winbond Electronics Corporation W97AH6NBVA2E
- Part No.:
- W97AH6NBVA2E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA2E.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,415
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Product details
Overview
W97AH6NBVA2E from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1.2V core/io supply with 533MHz data rate (LPDDR2-1066), supporting burst lengths of 4/8 and CAS latencies of 3/5 for low-power mobile memory subsystems in smartphones and tablets.
For engineers reviewing the W97AH6NBVA2E datasheet, W97AH6NBVA2E pinout, W97AH6NBVA2E application, or W97AH6NBVA2E equivalent, this page delivers verified electrical specs, ball assignment mapping, mode register configuration details, power-down behavior, and validated alternative parts for LPDDR2 memory design-in and BOM optimization.
Technical Context
This device implements JEDEC-standard LPDDR2 protocol with dual-channel 16-bit I/O interface, supports partial array self-refresh (PASR) via MR16/MR17, and uses HSUL_12 I/O standard with on-die termination calibrated via ZQ command (MRW to MR24). It requires external 200Ω ±1% ZQ reference resistor.
Initialization includes power-ramp sequence with tRST minimum of 200μs, mode register programming for burst type (sequential/burst chop), write leveling, and DQ calibration using MR32/MR40 patterns. Temperature sensor (MR4) enables thermal-aware refresh management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1Gb (128M x 8) organized as 8 banks × 2M rows × 8 columns |
| Data Rate | 1066 Mbps (533MHz clock, double-data-rate) |
| Voltage Supply | 1.2V ±0.06V core/io; 1.8V VDDQ not required - single-supply operation |
| CAS Latency | CL = 3 or 5 cycles (configurable via MR0/MR5); tDQSCKmin = –0.25tCK, tDQSCKmax = +0.5tCK |
| Burst Length | BL = 4 or 8 (programmable via MR1); supports seamless burst read/write with tCCD = 2 cycles |
| Refresh Interval | 7.8μs at 85°C (tREFI); supports all-bank and per-bank refresh per JEDEC JESD209-2A |
| Power-Down Modes | Active Power-Down (tCKE = 3 cycles min), Deep Power-Down (tDPD = 100ns min), and Self-Refresh (tIS = 10ns) |
Pinout & Package
Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8mm × 12.5mm × 0.8mm, 0.5mm pitch, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Core & I/O supply | 1.2V nominal; decoupling required per JEDEC layout guidelines |
| VSS | Ground reference | Must be connected to system ground plane with low-inductance path |
| CK_t / CK_c | Differential clock input | LVDS-compatible; 250–533MHz operation; tSKEW(CK) ≤ 50ps |
| DQS_t / DQS_c | Differential strobe | Source-synchronous timing reference for DQ reads/writes; tDQSS = ±0.25tCK |
| DQ[0:7] | Data I/O bus | 8-bit bidirectional; HSUL_12 driver; supports write mask via DM pin |
| DM | Data mask input | Per-byte masking during write; sampled on rising edge of DQS |
| CA[0:5] | Command/address bus | 6-bit multiplexed address/command; latched on CK rising edge |
| CS_n | Chip select | Active-low; enables command decoding when asserted with valid CA |
| CKE | Clock enable | Controls entry/exit from power-down and self-refresh states |
| ZQ | ZQ calibration reference | Connects to external 200Ω ±1% resistor for RONPU/RONPD trimming |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-1066 compliance | Fully conforms to JEDEC JESD209-2A specification including timing, signaling, and command set |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 75% by masking inactive banks/segments via MR16/MR17 |
| ZQ Calibration | Dynamic on-die termination adjustment using external 200Ω resistor; supports short/long calibration modes |
| Temperature Sensor Interface | Integrated sensor readable via MR4; enables adaptive refresh rate scaling above 85°C |
| Low-Power Command Set | Supports deep power-down (IDD6 < 10μA), auto-precharge, and burst terminate for dynamic power control |
Applications
| Smartphone Application | Tablet Memory Subsystem |
|---|---|
Use Scenario: Main application memory in mid-tier Android smartphones with ARM Cortex-A53/A72 SoCs. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 8-bit × 533MHz interface to memory controller; handles burst reads/writes with CL=3 latency. Use Value: Enables 4.2GB/s peak bandwidth within 1.2V power envelope; PASR extends battery life during background app suspension. | Use Scenario: Shared system memory in 7–10 inch tablets running Android or Windows 10 IoT. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 component interfacing to SoC memory controller with HSUL_12 I/O and ZQ calibration support. Use Value: Delivers deterministic tRCD = 3, tRP = 3, tRRD = 2 timing for predictable UI responsiveness; deep power-down reduces idle leakage to <10μA. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Graphics frame buffer and OS runtime memory in AEC-Q200 qualified infotainment head units. IC Role / Device Role / Timing Role: Mobile SDRAM operating across –25°C to +85°C ambient; uses MR4 temperature reporting for thermal refresh adaptation. Use Value: Maintains tREFI compliance under thermal cycling; PASR and DPDE modes meet ASIL-B power budget constraints. | Use Scenario: Real-time display controller memory in factory HMIs with fanless enclosure and extended temperature requirements. IC Role / Device Role / Timing Role: Low-voltage, low-heat LPDDR2 memory supporting burst read with tDQSCKmin = –0.25tCK for jitter-tolerant timing closure. Use Value: Eliminates need for VDDQ rail; single 1.2V supply simplifies PMIC design while meeting EN55032 Class B EMI limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 IT | 1Gb LPDDR2, 16-bit bus, 107-ball VFBGA, 1.2V, CL=3/5; same tRCD/tRP but different ZQ resistor tolerance (240Ω vs 200Ω) | Requires PCB layout change due to 16-bit vs 8-bit data width and different ball count; no PASR segment masking | Select when wider bus bandwidth needed and SoC supports 16-bit interface; verify ZQ resistor value and MR initialization sequence. |
| ISSI IS42S16160F-6BLI | 1Gb LPDDR2, 16-bit bus, 96-ball VFBGA, 1.2V, CL=3 only; lacks MR4 temperature sensor and MR16/MR17 PASR registers | No thermal-aware refresh or bank-level power gating; limited to fixed CL=3 operation | Choose for cost-sensitive designs where thermal adaptation and fine-grained power control are unnecessary. |
Compared with W97AH6NBVA2E, MT42L128M16D1KJ-107 IT offers higher bandwidth but demands board redesign and lacks PASR, while IS42S16160F-6BLI provides simpler initialization but forfeits temperature sensing and flexible burst-length configuration.
Availability
W97AH6NBVA2E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet application memory, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR2 interoperability.
Supply support for W97AH6NBVA2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W97AH6NBVA2E belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile platforms requiring JEDEC-compliant 1.2V operation, high-density packaging, and advanced power management features like PASR and ZQ calibration.
FAQ
What is the ball count and package type of W97AH6NBVA2E?
W97AH6NBVA2E uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8mm × 12.5mm × 0.8mm with 0.5mm pitch. This matches JEDEC MO-270AC standard and is distinct from 96-ball or 107-ball LPDDR2 variants. The full part number W97AH6NBVA2E explicitly denotes this VFBGA configuration per Winbond's ordering code structure.
Does W97AH6NBVA2E support both burst length 4 and 8?
Yes, W97AH6NBVA2E supports programmable burst lengths of BL=4 and BL=8 via MR1 register bit [1:0]. The device defaults to BL=4 after power-up, and BL=8 is enabled by setting MR1[1:0] = 11b. Both modes comply with JEDEC JESD209-2A timing requirements including tCCD = 2 cycles for seamless bursts.
What ZQ reference resistor value is required for W97AH6NBVA2E calibration?
W97AH6NBVA2E requires an external 200Ω ±1% resistor connected to the ZQ pin for on-die termination calibration. This value is specified in Section 7.4.24.5 of the datasheet and differs from alternatives like Micron's 240Ω requirement. Using incorrect resistance causes RONPU/RONPD mismatch and signal integrity degradation.
Can W97AH6NBVA2E operate without a temperature sensor interface?
Yes, W97AH6NBVA2E can operate without reading MR4 (temperature register), but doing so forfeits thermal-adaptive refresh. The device functions fully at fixed tREFI = 7.8μs across its rated –25°C to +85°C range. However, enabling MR4 allows dynamic refresh rate scaling above 85°C - a feature confirmed in Section 7.4.21 of the W97AH6NBVA2E datasheet.
Is W97AH6NBVA2E pin-compatible with W97AH2NBVA2E?
No, W97AH6NBVA2E and W97AH2NBVA2E are not pin-compatible despite identical package and ball count. They differ in density (1Gb vs 512Mb), internal bank organization (8 vs 4 banks), and MR register definitions - particularly MR17 segment masking, which is only implemented in the 1Gb variant per Section 7.3.14 of the shared datasheet.
W97AH6NBVA2E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA2E FAQ
1.How can I place an order for W97AH6NBVA2E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA2E reliable?
The price and inventory of W97AH6NBVA2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA2E is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA2E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA2E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA2E?
W97AH6NBVA2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA2E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA2E?
For technical support, including W97AH6NBVA2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA2E requirements.
6.How does Aetrix verify that W97AH6NBVA2E is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA2E meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA2E?
All W97AH6NBVA2E units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA2E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA2E part is unused and in its original packaging.
Return procedure for W97AH6NBVA2E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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