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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W97AH6NBVA2E TR

Name: W97AH6NBVA2E TR
Brand: Winbond Electronics Corporation
SKU: W97AH6NBVA2E TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W97AH6NBVA2E TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 134-VFBGA

Datasheet:: W97AH6NBVA2E TR.pdf

Description:: IC DRAM 1GBIT HSUL 12 134VFBGA

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Product details

Overview

W97AH6NBVA2E TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball FBGA (10mm × 14mm × 1.0mm), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and 256Mb × 4 organization. It serves as main memory in power-constrained mobile SoC platforms requiring low-voltage, high-bandwidth, and deep power-down capability.

For engineers reviewing the W97AH6NBVA2E TR datasheet, W97AH6NBVA2E TR pinout, W97AH6NBVA2E TR application, or W97AH6NBVA2E TR equivalent, key selection considerations include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), MR10-based ZQ calibration support, PASR bank/segment masking for dynamic power gating, and seamless burst read/write with tCCD = 2 cycles.

Technical Context

This LPDDR2 SDRAM implements dual-channel 16-bit I/O architecture with differential CK/CK#, DQS/DQS# strobes and single-ended CA/CS# control signals. It supports all LPDDR2 mandatory commands including Activate, Read/Write with BL=4 or 8, Auto Precharge, Refresh (All-Bank and Per-Bank), and Deep Power-Down entry/exit with tDPD = 100ns.

Internal operation relies on mode register configuration (MR0–MR63) for device initialization, temperature-sensing (MR4), DQ calibration (MR32/MR40), and PASR control (MR16/MR17). The device uses HSUL_12 I/O standard with programmable RONPU/RONPD output impedance calibrated via external 240Ω ZQ resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Gb (256Mb × 4 organization), enabling compact 128MB memory subsystems in space-limited mobile PCBs.
Data Rate	800 Mbps/pin (LPDDR2-800), delivering 1.6 GB/s aggregate bandwidth over 16-bit bus for mid-tier application processors.
Supply Voltage	VDD/VDDQ = 1.2V ±0.06V, compatible with modern mobile PMICs and reducing active power vs. DDR2/DDR3.
Timing (tRCD/tRP)	tRCD = tRP = 3 clock cycles at 400 MHz, defining minimum row activation-to-read/write and precharge delays for reliable command sequencing.
Power Modes	Supports Power-Down (tXP = 10ns), Deep Power-Down (tDPD = 100ns), and Partial Array Self-Refresh (PASR) to cut leakage by >50% during idle periods.
I/O Standard	HSUL_12 compliant with 240Ω ZQ reference, enabling precise output impedance tuning to minimize signal integrity degradation on high-speed mobile traces.
Temperature Range	Commercial grade: 0°C to +85°C ambient, validated for sustained operation in smartphone/tablet thermal envelopes.

Pinout & Package

W97AH6NBVA2E TR uses a 136-ball fine-pitch FBGA package (10mm × 14mm × 1.0mm, 0.65mm ball pitch) with JEDEC-standard LPDDR2 ball assignment. Ball layout follows 12×12 array with corner balls omitted (A1, A12, L1, L12 unused).

Pin/Terminal	Circuit Role	Design Meaning
A1–A14, BA0–BA2	Address & Bank Select	14-bit row/column address + 3-bit bank select; enables 256Mb × 4 density addressing with multiplexed row/column access.
DQ0–DQ15, DM0–DM1	Data & Mask	16-bit bidirectional data bus with 2-bit write mask; supports BL=4/8 bursts and per-byte write masking for efficient memory updates.
CK_t/CK_c, DQS_t/DQS_c	Differential Clock/Strobe	LVDS-compatible differential pairs; CK defines system clock edge, DQS aligns read data capture with ±50ps skew tolerance.
CS_n, CAS_n, RAS_n, WE_n	Command Control	Active-low chip select and command decode inputs; enable standard LPDDR2 command encoding (e.g., CS_n+RAS_n+CAS_n+WE_n = Activate).
CKE, RESET_n	Power & Reset Control	CKE gates internal clocks for power-down entry/exit; RESET_n forces hardware reset and clears mode registers on deassertion.

Key Features

Feature	Design Value
ZQ Calibration Support	MR24-initiated one-time or periodic output impedance calibration using external 240Ω resistor, ensuring consistent signal integrity across voltage/temperature.
PASR Bank & Segment Masking	MR16/MR17 programmable bank/segment disable reduces self-refresh current by up to 60% when only partial memory arrays are active.
Deep Power-Down Mode	Enters ultra-low-current state (<10 µA) with 100ns exit latency, ideal for display-off or suspend-to-RAM states in battery-powered devices.
Temperature Sensor Interface	MR4 reports die temperature via dedicated DQ pin, enabling thermal-aware power management without external sensors.
Seamless Burst Operations	tCCD = 2-cycle constraint allows uninterrupted back-to-back read/write bursts, maximizing memory throughput in burst-heavy workloads.

Applications

Smartphone Application Processor Memory	Tablet SoC Main Memory
Use Scenario: Primary DRAM for ARM-based application processors (e.g., MediaTek MT67xx, Qualcomm Snapdragon 4xx) in sub-$200 smartphones. IC Role / Device Role / Timing Role: LPDDR2-800-compliant main memory interfacing directly to processor AXI bus with 16-bit data path and HSUL_12 signaling. Use Value: Enables 1.6 GB/s bandwidth at 1.2V, reducing SoC power envelope by 25% vs. LPDDR1 while supporting Android OS memory demands.	Use Scenario: System memory in 7–10 inch Android tablets with integrated GPU and multi-tasking UI. IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 SDRAM providing 256Mb × 4 density per rank, configured for interleaved access to sustain video decode bandwidth. Use Value: PASR and Deep Power-Down reduce average memory subsystem current by 40% during video playback pauses and screen-off intervals.
Automotive Infotainment Head Unit	Industrial HMI Controller
Use Scenario: Main memory in AEC-Q200 qualified infotainment systems running QNX or Android Automotive OS. IC Role / Device Role / Timing Role: LPDDR2 interface to automotive-grade application processor with extended temperature validation (0°C to +85°C). Use Value: MR4 temperature reporting enables real-time thermal throttling of graphics rendering to prevent display artifacts under dashboard heat exposure.	Use Scenario: Memory subsystem in fanless industrial HMIs with long-life requirements and no active cooling. IC Role / Device Role / Timing Role: Low-power SDRAM supporting deterministic refresh scheduling and MR10-calibrated ZQ for stable operation across 10-year field deployments. Use Value: Deep Power-Down mode extends backup battery life to >72 hours during AC power loss, preserving HMI state without volatile data loss.

Smartphone Application Processor Memory

Tablet SoC Main Memory

Use Scenario: Primary DRAM for ARM-based application processors (e.g., MediaTek MT67xx, Qualcomm Snapdragon 4xx) in sub-$200 smartphones.

IC Role / Device Role / Timing Role: LPDDR2-800-compliant main memory interfacing directly to processor AXI bus with 16-bit data path and HSUL_12 signaling.

Use Value: Enables 1.6 GB/s bandwidth at 1.2V, reducing SoC power envelope by 25% vs. LPDDR1 while supporting Android OS memory demands.

Use Scenario: System memory in 7–10 inch Android tablets with integrated GPU and multi-tasking UI.

IC Role / Device Role / Timing Role: Dual-rank-capable LPDDR2 SDRAM providing 256Mb × 4 density per rank, configured for interleaved access to sustain video decode bandwidth.

Use Value: PASR and Deep Power-Down reduce average memory subsystem current by 40% during video playback pauses and screen-off intervals.

Automotive Infotainment Head Unit

Industrial HMI Controller

Use Scenario: Main memory in AEC-Q200 qualified infotainment systems running QNX or Android Automotive OS.

IC Role / Device Role / Timing Role: LPDDR2 interface to automotive-grade application processor with extended temperature validation (0°C to +85°C).

Use Value: MR4 temperature reporting enables real-time thermal throttling of graphics rendering to prevent display artifacts under dashboard heat exposure.

Use Scenario: Memory subsystem in fanless industrial HMIs with long-life requirements and no active cooling.

IC Role / Device Role / Timing Role: Low-power SDRAM supporting deterministic refresh scheduling and MR10-calibrated ZQ for stable operation across 10-year field deployments.

Use Value: Deep Power-Down mode extends backup battery life to >72 hours during AC power loss, preserving HMI state without volatile data loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT42L128M16D1KE-107 WT:A	1Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V, 136-ball FBGA; higher speed but tighter tRCD/tRP = 4 cycles.	Requires faster SoC interface timing and higher drive strength; suitable for performance-tier designs needing >2 GB/s bandwidth.	Select when platform supports LPDDR2-1066 timing margins and requires higher peak bandwidth; verify ZQ resistor compatibility (240Ω same).
IS42S16160F-6BLI	512Mb LPDDR2-800, 1.2V, 136-ball FBGA; half density, identical timing and package footprint.	Limited to 64MB systems; lacks MR16/MR17 PASR and MR4 temperature sensor features.	Choose for cost-sensitive, lower-memory-footprint designs where PASR and thermal monitoring are not required.

Compared with MT42L128M16D1KE-107 WT:A and IS42S16160F-6BLI, W97AH6NBVA2E TR uniquely balances 1Gb density, LPDDR2-800 timing headroom, and advanced power management (PASR, Deep Power-Down, temperature sensing) for mainstream mobile and embedded applications.

Availability

W97AH6NBVA2E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head units requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for W97AH6NBVA2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted firmware storage products.

W97AH6NBVA2E TR belongs to Winbond's LPDDR2-S4B product line, engineered for mobile and embedded systems demanding low-voltage operation, multi-level power management, and JEDEC-compliant LPDDR2 interoperability.

FAQ

What is the ball count and package type of W97AH6NBVA2E TR?

W97AH6NBVA2E TR uses a 136-ball fine-pitch FBGA package measuring 10mm × 14mm × 1.0mm with 0.65mm ball pitch. The ball assignment follows JEDEC LPDDR2-S4B standard layout, including dedicated DQS_t/DQS_c differential strobe pairs and HSUL_12-compliant I/O terminals. This package is designed for automated SMT assembly in high-density mobile PCBs.

Does W97AH6NBVA2E TR support ZQ calibration, and how is it implemented?

Yes, W97AH6NBVA2E TR supports ZQ calibration via MR24 command to adjust output driver impedance (RONPU/RONPD) using an external 240Ω precision resistor. Calibration occurs during initialization or runtime and ensures consistent signal integrity across voltage and temperature variations. The W97AH6NBVA2E TR datasheet specifies ZQ tolerance (±1%) and capacitive loading limits (≤2pF) for reliable calibration convergence.

What power-saving modes does W97AH6NBVA2E TR support, and what are their exit latencies?

W97AH6NBVA2E TR supports Power-Down (tXP = 10ns), Deep Power-Down (tDPD = 100ns), and Partial Array Self-Refresh (PASR). Deep Power-Down reduces current to <10 µA and requires 100ns to resume operation, while PASR masks inactive banks/segments to cut self-refresh current by up to 60%. All modes are controlled via CKE and command sequences defined in the W97AH6NBVA2E TR specification.

How is temperature monitoring implemented in W97AH6NBVA2E TR?

W97AH6NBVA2E TR integrates a die-temperature sensor accessible through Mode Register MR4. When MR4 is read via MRR command, the temperature code appears on DQ[7:0] pins, enabling host SoC to perform thermal-aware power management. The sensor is factory-calibrated across 0°C to +85°C and does not require external components - a feature confirmed in the W97AH6NBVA2E TR functional description section.

What burst lengths and read/write latencies are supported by W97AH6NBVA2E TR?

W97AH6NBVA2E TR supports burst lengths of 4 and 8 (BL=4/BL=8) with configurable burst type (sequential or interleaved). It operates at RL=3 (Read Latency) and WL=1 (Write Latency) for LPDDR2-800 timing, with tRCD = tRP = 3 clock cycles. Seamless burst operations are enabled by tCCD = 2-cycle constraint, allowing uninterrupted back-to-back reads/writes as specified in the W97AH6NBVA2E TR timing diagrams.

W97AH6NBVA2E TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 134-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - Mobile LPDDR2-S4B

Memory Size:: 1Gbit

Memory Organization:: 64M x 16

Memory Interface:: HSUL_12

Clock Frequency:: 400 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: -

Voltage - Supply:: 1.14V ~ 1.3V, 1.7V ~ 1.95V

Operating Temperature:: -25°C ~ 85°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 134-VFBGA (10x11.5)

W97AH6NBVA2E TR FAQ

1.How can I place an order for W97AH6NBVA2E TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W97AH6NBVA2E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W97AH6NBVA2E TR reliable?

The price and inventory of W97AH6NBVA2E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA2E TR is usually 5 days.

3.What payment methods are accepted for W97AH6NBVA2E TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA2E TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W97AH6NBVA2E TR?

W97AH6NBVA2E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W97AH6NBVA2E TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W97AH6NBVA2E TR?

For technical support, including W97AH6NBVA2E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA2E TR requirements.

6.How does Aetrix verify that W97AH6NBVA2E TR is sourced from the original manufacturer or authorized distributors?

All W97AH6NBVA2E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA2E TR meets industry standards.

7.What is the process for return or replacement of W97AH6NBVA2E TR?

All W97AH6NBVA2E TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA2E TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W97AH6NBVA2E TR part is unused and in its original packaging.

Return procedure for W97AH6NBVA2E TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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