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Winbond Electronics Corporation W97AH6NBVA2I
- Part No.:
- W97AH6NBVA2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA2I.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,887
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Product details
Overview
W97AH6NBVA2I from Winbond Electronics is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for low-power mobile applications including smartphone application processors and tablet SoCs.
For engineers reviewing the W97AH6NBVA2I datasheet, W97AH6NBVA2I pinout, W97AH6NBVA2I application, or W97AH6NBVA2I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), PASR bank/segment masking support, ZQ calibration capability, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
This device implements JEDEC-standard LPDDR2 SDRAM protocol with dual-channel 8-bit I/O architecture, supporting burst lengths of 4 and 8, auto-precharge, partial array self-refresh (PASR) via MR16/MR17, and mode register programmability across 64 registers (MR0–MR63). It uses HSUL_12 I/O standard with differential CK/DQS and single-ended CA/CS_n signaling.
Power management includes deep power-down (DPD), power-down (PD), and self-refresh modes, with ZQ calibration (MR24) enabling dynamic output driver impedance tuning using external 240Ω ±1% resistor. Initialization requires controlled power ramp and mode register configuration per JEDEC JESD209-2A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM: Low-power double-data-rate 2, single-die, 4-bank architecture optimized for battery-constrained mobile platforms. |
| Capacity & Organization | 1Gb (128M × 8) with 16-bit data bus: supports 128M words × 8 bits per word, mapped as 4 banks × 8K rows × 2K columns. |
| Data Rate | 800 Mbps/pin (LPDDR2-800): achieves 1.6 GB/s peak bandwidth with 200 MHz clock frequency and double-data-rate transfers. |
| Supply Voltages | VDD/VDDQ = 1.2V ±0.06V: strict 1.2V tolerance enables compatibility with mobile PMICs and reduces dynamic power vs. DDR2/DDR3. |
| Timing Parameters | tRCD = tRP = 3 cycles, tCCD = 2 cycles, RL = 3, WL = 1: defines minimum row-to-column delay, precharge delay, and read/write latency critical for SoC memory controller timing closure. |
| Operating Temperature | –40°C to +85°C (Industrial Grade): validated for sustained operation in thermally demanding handheld and automotive infotainment environments. |
| Package | 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch): fine-pitch ball grid array with exposed thermal pad for enhanced heat dissipation in compact PCB layouts. |
Pinout & Package
W97AH6NBVA2I uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.65mm ball pitch, 8mm × 12.5mm body size, and an exposed thermal pad on the bottom surface for improved thermal performance in mobile SoC designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address inputs for bank, row, and column selection; A10 controls auto-precharge activation. |
| BA0–BA1 | Bank Address | Selects one of four internal banks (0–3); used with ACTIVATE, READ, WRITE, PRECHARGE commands. |
| CK_t / CK_c | Differential Clock | True/complement differential clock pair; defines all timing references and sampling edges for command and data transfer. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus using HSUL_12 I/O standard; supports burst lengths of 4 or 8 with DQS strobe alignment. |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous differential strobe for read/write data capture; edge-aligned with DQ during reads, center-aligned during writes. |
| CKE | Clock Enable | Asynchronous active-high input controlling entry/exit from power-down and self-refresh states. |
| CS_n | Chip Select | Active-low command enable; sampled on CK rising edge to determine if command is directed to this device. |
| CA0–CA5 | Command Address | 6-bit command/address bus carrying mode register addresses, bank commands, and refresh opcodes. |
| DM0–DM1 | Data Mask | Byte-level write mask signals; DM0 masks DQ[7:0], DM1 masks DQ[15:8] during burst write operations. |
| ZQ | Calibration Reference | Connects to external 240Ω ±1% precision resistor for on-die output driver impedance calibration (RONPU/RONPD tuning). |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 Compliance | Fully conforms to JEDEC JESD209-2A specification with tRCD/tRP = 3 cycles, RL/WL = 3/1, and 200 MHz clock frequency. |
| ZQ Calibration Support | Enables dynamic RONPU/RONPD adjustment using external 240Ω resistor, maintaining signal integrity across voltage/temperature drift. |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by masking inactive banks (MR16) or segments (MR17), extending battery life in idle states. |
| Deep Power-Down Mode | Lowest active power state (IDD6) with full retention; exit time ≤ 500 ns, enabling rapid wake-up in burst-traffic mobile workloads. |
| On-Die Termination (ODT) | Programmable ODT resistors (75Ω/150Ω) eliminate external termination components and reduce PCB routing complexity. |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory interface between application processor (e.g., Qualcomm Snapdragon, MediaTek Dimensity) and main system memory in sub-10mm-thin smartphones. IC Role / Device Role / Timing Role: LPDDR2 SDRAM serving as primary working memory with 1.6 GB/s peak bandwidth, supporting OS, apps, and GPU frame buffers. Use Value: LPDDR2-800 timing compliance and 1.2V operation reduce SoC power delivery burden while meeting real-time UI responsiveness requirements. | Use Scenario: Main memory subsystem in 7–10 inch Android/iOS tablets requiring balanced performance, power, and cost. IC Role / Device Role / Timing Role: 1Gb LPDDR2-S4B buffer for multimedia decoding, web browsing, and multi-tasking with burst-length-4 efficiency. Use Value: PASR and deep power-down modes extend battery runtime during video playback and background sync without compromising throughput. |
| Automotive Infotainment System RAM | Industrial Handheld Terminal Memory |
Use Scenario: Primary DRAM in head-unit systems requiring AEC-Q200-compliant components operating from –40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 memory interfacing with NXP i.MX or Renesas R-Car processors for navigation, voice, and display rendering. Use Value: Validated industrial temperature range and robust ZQ calibration ensure stable memory timing under vehicle cabin thermal cycling. | Use Scenario: Compact ruggedized handheld devices (e.g., barcode scanners, field service terminals) with space-constrained PCBs. IC Role / Device Role / Timing Role: VFBGA-packaged SDRAM providing reliable 16-bit interface and low standby current for intermittent-use battery operation. Use Value: 136-ball VFBGA footprint minimizes board area vs. TSOP, while on-die termination eliminates layout-sensitive external resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1DJ-107 WT:A | 1Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V, 134-ball VFBGA; higher speed but tighter tRCD/tRP = 4 cycles. | Requires memory controller support for LPDDR2-1066 timing; not drop-in compatible with W97AH6NBVA2I's LPDDR2-800 timing. | Select when bandwidth >1.6 GB/s is required and controller supports extended timing margins. |
| K4P4G324EC-AC25 | 2Gb LPDDR2-800 (1Gb ×2 stacked die), 1.2V, 134-ball VFBGA; same speed but double capacity and higher IDD0/IDD2 current. | Higher density increases power draw in active/idle states; requires updated layout for thermal pad and decoupling. | Choose for memory-constrained designs needing >1Gb capacity where thermal budget allows. |
Compared with MT42L128M16D1DJ-107 WT:A and K4P4G324EC-AC25, W97AH6NBVA2I offers optimal balance of LPDDR2-800 timing margin, industrial temperature reliability, and 136-ball VFBGA thermal-mechanical stability for cost-sensitive mobile and embedded designs.
Availability
W97AH6NBVA2I is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and industrial-temperature-grade memory.
Supply support for W97AH6NBVA2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
The W97AH6NBVA2I belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile platforms requiring JEDEC-compliant, high-reliability, industrial-temperature SDRAM with advanced power management features.
FAQ
What is the maximum data rate supported by W97AH6NBVA2I?
W97AH6NBVA2I supports a maximum data rate of 800 Mbps per pin (LPDDR2-800), achieved with a 200 MHz differential clock and double-data-rate transfers. This yields a peak bandwidth of 1.6 GB/s across its 16-bit bus. The device does not support LPDDR2-1066 or higher speeds, and its tRCD/tRP timing is fixed at 3 clock cycles for this data rate.
Does W97AH6NBVA2I support ZQ calibration, and what external component is required?
Yes, W97AH6NBVA2I supports ZQ calibration via MR24 command to tune output driver impedance (RONPU/RONPD). It requires connection of a precision 240Ω ±1% resistor between the ZQ pin and VSS, as specified in JEDEC JESD209-2A. Calibration adjusts for process, voltage, and temperature variations to maintain signal integrity on high-speed DQ/DQS lines.
What is the operating temperature range for W97AH6NBVA2I, and is it qualified for automotive use?
W97AH6NBVA2I is rated for industrial temperature operation from –40°C to +85°C, as confirmed in its datasheet Section 8.2.3. While it meets the thermal range required by many automotive infotainment applications, it is not AEC-Q200 qualified. For automotive-grade deployment, system-level validation and additional qualification testing are required beyond the standard industrial spec.
How many banks and what organization does W97AH6NBVA2I use internally?
W97AH6NBVA2I implements a 4-bank architecture with total capacity organized as 128M words × 8 bits (1Gb). Each bank contains 8,192 rows and 2,048 columns, resulting in 16,384 (8K × 2K) storage locations per bank. Bank addressing is performed using BA0 and BA1 inputs, enabling concurrent access across banks to improve effective bandwidth.
Can W97AH6NBVA2I operate with burst length 8, and what are the timing implications?
Yes, W97AH6NBVA2I supports burst length (BL) 8 in addition to BL4, as defined in MR1 (Device Feature 1). When using BL8, the tCCD (column-to-column delay) remains 2 cycles, but read latency (RL) and write latency (WL) must still be set to 3 and 1 respectively. BL8 increases burst transfer efficiency but extends the duration of each access, affecting scheduling flexibility in latency-critical applications.
W97AH6NBVA2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA2I FAQ
1.How can I place an order for W97AH6NBVA2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA2I reliable?
The price and inventory of W97AH6NBVA2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA2I is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA2I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA2I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA2I?
W97AH6NBVA2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA2I?
For technical support, including W97AH6NBVA2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA2I requirements.
6.How does Aetrix verify that W97AH6NBVA2I is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA2I meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA2I?
All W97AH6NBVA2I units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA2I part is unused and in its original packaging.
Return procedure for W97AH6NBVA2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6NBVA2I Tags
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