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Winbond Electronics Corporation W97AH6NBVA2I TR
- Part No.:
- W97AH6NBVA2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97AH6NBVA2I TR.pdf
- Description:
- IC DRAM 1GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,280
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Product details
Overview
W97AH6NBVA2I TR from Winbond is a 1Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1.2V core/interface voltage with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and burst lengths of 4 or 8. It delivers low-power memory for smartphone application processors and portable multimedia SoCs.
For engineers reviewing the W97AH6NBVA2I TR datasheet, W97AH6NBVA2I TR pinout, W97AH6NBVA2I TR application, or W97AH6NBVA2I TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR) bank/segment masking, ZQ calibration support, and industrial temperature range (–40°C to +85°C).
Technical Context
This LPDDR2 device implements dual-bank architecture with 8 internal banks, supports both single-ended CA/CS_n and differential CK/DQS signaling, and uses HSUL_12 I/O standard for DQ/DM lines. It features mode register programming for burst type (sequential/burst chop), read/write latency (RL=3/5, WL=1), and temperature-sensing via MR4.
Power management includes deep power-down (DPD), auto-precharge, and controlled power ramp sequences. Calibration capabilities cover DQ timing (MR32/MR40), ZQ resistor matching (MR10), and PASR configuration (MR16/MR17) to reduce active bank count and dynamic power during light-load operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B SDRAM - Low-power double-data-rate synchronous DRAM compliant with JEDEC JESD209-2A specification. |
| Capacity & Organization | 1Gb (128M × 8) - Configured as 16-bit wide x 64M words; supports x8/x16 configurations via mode register. |
| Data Rate | 800 Mbps/pin (LPDDR2-800) - Enables 1.6 GB/s peak bandwidth on 16-bit bus; requires tCK = 2.5 ns minimum clock period. |
| Supply Voltages | VDD/VDDQ = 1.2V ± 0.06V - Tight tolerance ensures stable HSUL_12 output driver operation and signal integrity at high speed. |
| Operating Temp | –40°C to +85°C - Industrial-grade thermal rating suitable for embedded mobile and automotive infotainment applications. |
| Timing Parameters | tRCD = tRP = 3 × tCK, tRRD = 2 × tCK - Defines minimum row-to-column and row-precharge delays critical for command scheduling in SoC memory controllers. |
| Power Modes | Deep Power-Down, Self-Refresh, Partial Array Self-Refresh - Reduces standby current to <10 µA (DPD) and enables selective bank retention during idle periods. |
Pinout & Package
W97AH6NBVA2I TR is housed in a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 10.5 mm × 12.5 mm × 0.8 mm (ball pitch: 0.5 mm). Ball assignment follows JEDEC-standard LPDDR2 layout with dedicated DQ, DQS, CK, CKE, CA, and VREF pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[0:15] | Data Input/Output | 16-bit bidirectional data bus using HSUL_12 I/O standard; supports BL=4/8 reads/writes with DQS strobe alignment. |
| DQS[0:1] | Data Strobe | Differential strobes (DQS_t/c) for source-synchronous read/write capture; each controls 8 DQ bits (DQS0→DQ[0:7], DQS1→DQ[8:15]). |
| CK_t / CK_c | System Clock | Differential clock input (CK_t – CK_c) driving all timing-sensitive operations; frequency determines tCK and maximum data rate. |
| CA[0:5] | Command Address | 6-bit single-ended bus conveying row/column/bank addresses and command encodings (ACT, READ, WRITE, PRE, REF, etc.). |
| CS_n | Chip Select | Active-low enable controlling device participation in command decoding; allows multi-chip stacking with shared CA/CK. |
| CKE | Clock Enable | Gates internal clock domain; low state initiates power-down modes including self-refresh and deep power-down. |
| VREF | Reference Voltage | 0.6V reference for CA/CS_n input threshold; must be externally supplied with ±1% accuracy for reliable command recognition. |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration Support | Enables dynamic RONPU/RONPD adjustment using external 240Ω ±1% ZQ resistor, maintaining impedance match across voltage/temperature drift. |
| Partial Array Self-Refresh (PASR) | Reduces refresh power by masking inactive banks (MR16) or segments (MR17); cuts IDD6 current up to 50% during light-load operation. |
| Temperature Sensor Interface | MR4 reports die temperature in 2's complement format; enables host-controlled thermal throttling or adaptive refresh rate scaling. |
| Burst Chop Mode | Allows BL=8 reads/writes to be truncated to BL=4 using BST command, improving bus efficiency when full burst length is unnecessary. |
| HSUL_12 I/O Standard | Provides 1.2V pseudo-differential signaling with reduced swing (±150 mV) and fast edge rates, minimizing EMI and crosstalk in dense mobile PCB layouts. |
Applications
| Smartphone Application Processor Memory | Portable Media Player Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Helio) executing Android OS and multimedia frameworks. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit wide, 800 Mbps/pin interface with RL=3/WL=1 timing for low-latency instruction and data access. Use Value: Enables sub-20ns read latency and 1.6 GB/s bandwidth while maintaining <35 mA IDD0 (active) and <10 µA IDD6 (deep power-down) for extended battery life. | Use Scenario: Frame buffer and decode acceleration memory in handheld video players supporting 1080p H.264 playback. IC Role / Device Role / Timing Role: High-bandwidth, low-power buffer storing decoded video frames and intermediate processing data with seamless burst reads (tCCD = 2). Use Value: Supports burst interrupt capability (read-read/write-write overlap) and PASR to minimize power during static UI display or audio-only playback modes. |
| Automotive Infotainment Head Unit | Industrial Tablet Graphics Subsystem |
Use Scenario: System memory for QNX- or Linux-based head units integrating navigation, Bluetooth, and rear-camera display. IC Role / Device Role / Timing Role: Industrial-temperature LPDDR2 device interfacing with NXP i.MX8 or Renesas R-Car SoCs via 16-bit LPDDR2-800 bus. Use Value: Guaranteed operation from –40°C to +85°C with robust ZQ calibration ensures signal integrity across vehicle cabin thermal cycles and EMI environments. | Use Scenario: GPU frame buffer and shader memory in ruggedized tablets used in warehouse logistics or field service applications. IC Role / Device Role / Timing Role: Dual-bank LPDDR2 supporting concurrent graphics rendering and UI compositing with auto-precharge and burst terminate commands. Use Value: Enables efficient memory utilization through bank interleaving and reduces refresh overhead via temperature-aware MR4-triggered refresh rate adaptation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16LQ-125K | 1Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V, 136-ball VFBGA; tighter tRCD/tRP = 2.5 cycles; no PASR segment masking (MR17). | Higher bandwidth but higher power; lacks MR17-level granularity for fine-grained power gating in ultra-low-power sleep states. | Select when peak bandwidth >1.6 GB/s is required and thermal/power budget allows higher IDD0/IDD2. |
| EM6AB160BS-10H | 1Gb LPDDR2-800, 1.2V, 134-ball VFBGA; supports only BL=4; no temperature sensor (MR4); no MR32/MR40 DQ calibration registers. | Simpler calibration flow but less flexible timing tuning; no die temperature reporting for adaptive refresh control. | Select for cost-sensitive designs where PASR, ZQ long/short calibration, and thermal awareness are not required. |
Compared with MT42L128M16LQ-125K and EM6AB160BS-10H, W97AH6NBVA2I TR offers balanced performance, industrial temperature support, and comprehensive power management (PASR, DPD, MR4 sensing), making it optimal for battery-constrained mobile and embedded systems requiring design longevity and thermal resilience.
Availability
W97AH6NBVA2I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, portable media player buffers, and automotive infotainment head units requiring stable component supply across extended product lifecycles.
Supply support for W97AH6NBVA2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM products for consumer, industrial, and automotive markets.
The W97AH series targets mobile and embedded platforms needing JEDEC-compliant LPDDR2 with enhanced power management, calibrated I/O, and industrial temperature reliability-designed specifically for space-constrained, battery-operated devices.
FAQ
What is the maximum data rate supported by W97AH6NBVA2I TR?
W97AH6NBVA2I TR supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a minimum clock period (tCK) of 2.5 ns. This enables a peak bandwidth of 1.6 GB/s on its 16-bit bus. The device does not support LPDDR2-1066; timing parameters like tRCD and tRP are specified for 3-cycle latency at this rate.
Does W97AH6NBVA2I TR support partial array self-refresh (PASR)?
Yes, W97AH6NBVA2I TR supports PASR via mode registers MR16 (bank masking) and MR17 (segment masking). This feature allows selective refresh of active memory regions only, reducing IDD6 current during low-activity states. Configuration is performed using MRW commands with MA[7:0] = 10H or 11H.
What package type and ball count does W97AH6NBVA2I TR use?
W97AH6NBVA2I TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 10.5 mm × 12.5 mm × 0.8 mm with 0.5 mm ball pitch. This JEDEC-standard LPDDR2 footprint supports high-density mobile PCB layouts and thermal dissipation requirements for handheld devices.
Is ZQ calibration required for W97AH6NBVA2I TR operation?
Yes, ZQ calibration is required for stable HSUL_12 I/O operation. W97AH6NBVA2I TR uses an external 240Ω ±1% ZQ resistor to calibrate output driver impedance (RONPU/RONPD). Calibration is initiated via MRW command to MR10 and supports short/long initialization sequences per JEDEC spec.
What is the operating temperature range for W97AH6NBVA2I TR?
W97AH6NBVA2I TR is rated for industrial temperature operation from –40°C to +85°C. This range is validated across all AC/DC specifications, including timing parameters, IDD current limits, and ZQ calibration stability, making it suitable for automotive infotainment and ruggedized portable equipment.
W97AH6NBVA2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97AH6NBVA2I TR FAQ
1.How can I place an order for W97AH6NBVA2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97AH6NBVA2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97AH6NBVA2I TR reliable?
The price and inventory of W97AH6NBVA2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97AH6NBVA2I TR is usually 5 days.
3.What payment methods are accepted for W97AH6NBVA2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97AH6NBVA2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97AH6NBVA2I TR?
W97AH6NBVA2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97AH6NBVA2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97AH6NBVA2I TR?
For technical support, including W97AH6NBVA2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97AH6NBVA2I TR requirements.
6.How does Aetrix verify that W97AH6NBVA2I TR is sourced from the original manufacturer or authorized distributors?
All W97AH6NBVA2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97AH6NBVA2I TR meets industry standards.
7.What is the process for return or replacement of W97AH6NBVA2I TR?
All W97AH6NBVA2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97AH6NBVA2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97AH6NBVA2I TR part is unused and in its original packaging.
Return procedure for W97AH6NBVA2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97AH6NBVA2I TR Tags
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M24C02-WMN6TP
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