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Winbond Electronics Corporation W97BH2MBVA1E
- Part No.:
- W97BH2MBVA1E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH2MBVA1E.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,863
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Product details
Overview
W97BH2MBVA1E from Winbond Electronics is a 2Gb LPDDR2-S4B mobile SDRAM with 16-bit data bus, 1.2V core/VDDQ supply, and 800 Mbps/pin data rate (LPDDR2-800). It implements dual-bank architecture with programmable burst lengths (BL=4/8), supports partial array self-refresh (PASR), and targets memory subsystems in smartphones and portable tablets requiring low-power, high-density mobile DRAM.
For engineers reviewing the W97BH2MBVA1E datasheet, W97BH2MBVA1E pinout, W97BH2MBVA1E application, or W97BH2MBVA1E equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), HSUL_12 I/O interface, ZQ calibration support, and PASR bank/segment masking capability for dynamic power optimization.
Technical Context
This device operates as a synchronous, double-data-rate mobile DRAM compliant with JEDEC JESD209-2 standard. It uses differential CK_t/CK_c clock inputs and single-ended CA/CS_n command/address signals, with HSUL_12 output drivers calibrated via external 240Ω ZQ resistor.
Internal architecture includes eight banks organized as two independent 4-bank groups, supporting concurrent activation across groups. Mode registers MR0–MR63 define device features including burst type (sequential/interleaved), read/write latency (RL=3/5, WL=1), temperature-sensing, and DQ calibration patterns for signal integrity tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 8-bit organization) |
| Data Bus Width | 16-bit (x16 configuration) |
| Max Data Rate | 800 Mbps/pin (LPDDR2-800, tCK = 2.5 ns) |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; VREF = 0.6V ± 1% DC |
| Timing Parameters | tRCD = tRP = 3 × tCK; tRRD = 2 × tCK; tFAW = 20 × tCK |
| I/O Standard | HSUL_12 (High-Speed Ultra-Low voltage, 1.2V) |
| Refresh Support | All-bank, per-bank, and Partial Array Self-Refresh (PASR) with bank/segment masking |
Pinout & Package
W97BH2MBVA1E is housed in a 136-ball FBGA package (10 mm × 12 mm × 0.8 mm height) with 0.5 mm ball pitch, RoHS-compliant matte tin finish, and thermal pad on underside for enhanced heat dissipation in mobile SoC integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Primary system clock pair; defines all timing windows; requires matched trace length and 100Ω differential termination |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe for DQ[15:0]; enables precise data capture at receiver |
| CA[6:0] | Command/Address Bus | 7-bit multiplexed bus carrying row/column/bank address and command encoding (ACT, READ, WRITE, etc.) |
| CS_n | Chip Select | Active-low enable for command decoding; must be stable one cycle before command launch |
| CKE | Clock Enable | Controls entry/exit from power-down and self-refresh; high = active, low = gated clock domain |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus using HSUL_12 drivers; supports BL=4/8 bursts with selectable wrap/non-wrap mode |
| ZQ | Calibration Reference | Connects to external 240Ω ±1% resistor for RONPU/RONPD output driver calibration and impedance matching |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 Compliance | Fully conforms to JEDEC JESD209-2 spec with tCK = 2.5 ns, RL=3/WL=1 base timing, and HSUL_12 I/O |
| Partial Array Self-Refresh (PASR) | Reduces refresh power by masking inactive banks (MR16) or segments (MR17), enabling dynamic memory partitioning |
| ZQ Calibration | Supports long/short calibration cycles (MR24) to maintain output impedance accuracy across voltage/temperature drift |
| Temperature Sensor Interface | Integrated sensor accessible via MR4; enables thermal-aware refresh rate adjustment and system-level thermal management |
| DQ Calibration Patterns | MR32/MR40 provide configurable DQ training sequences for optimal receiver eye margin in high-speed layouts |
Applications
| Smartphone Application | Tablet Memory Subsystem |
|---|---|
Use Scenario: Main memory for application processor in mid-tier Android smartphones with display resolution up to FHD+. IC Role / Device Role / Timing Role: LPDDR2-800 x16 SDRAM providing 1.6 GB/s peak bandwidth to SoC memory controller. Use Value: Enables sustained UI responsiveness and background app concurrency while maintaining sub-50mW active power per 2Gb die. | Use Scenario: Shared system memory in 7–10 inch tablets running lightweight OS with multi-tasking and media playback. IC Role / Device Role / Timing Role: Dual-rank LPDDR2 memory component interfacing with ARM-based SoC via HSUL_12 bus. Use Value: Supports seamless video decode (1080p@30fps) and GPU-accelerated UI rendering under thermally constrained tablet chassis. |
| IoT Gateway Buffer | Industrial HMI Controller |
Use Scenario: Local buffering of sensor fusion data and edge inference results in cellular-connected IoT gateways. IC Role / Device Role / Timing Role: Low-latency, low-power memory buffer between MCU and LTE modem/NPU accelerator. Use Value: PASR and deep power-down modes reduce average memory power to <1.2 mW during idle polling intervals. | Use Scenario: Real-time display and control memory in fanless industrial HMIs with extended operating temperature range. IC Role / Device Role / Timing Role: Temperature-compensated LPDDR2 memory supporting -25°C to +85°C ambient operation with MR4 sensor feedback. Use Value: Maintains reliable tRCD/tRP timing margins across full industrial temp range via calibrated HSUL_12 drivers and ZQ tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1KJ-107 WT:A | Same density (2Gb), x16, LPDDR2-1066; higher speed grade; tighter tRCD/tRP = 2 cycles | Requires faster SoC memory controller with LPDDR2-1066 timing support and revised layout for 1.066 Gbps signaling | Select when system demands >1.6 GB/s bandwidth and controller supports RL=2/WL=1 timing |
| K4P2G324EC-ACF6 | 2Gb x16 LPDDR2-800; identical tRCD/tRP = 3, same HSUL_12 I/O; different ball map and ZQ pin location | Not pin-compatible; requires PCB redesign due to non-matching FBGA footprint and CA/DQ pin assignments | Consider only for new designs where layout flexibility allows re-routing; verify MR register compatibility for PASR/ZQ behavior |
Compared with MT42L256M16D1KJ-107 WT:A and K4P2G324EC-ACF6, the W97BH2MBVA1E offers optimized cost-performance balance for LPDDR2-800 systems with strict power budgets, validated PASR implementation, and Winbond's documented ZQ calibration stability over temperature.
Availability
W97BH2MBVA1E is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet SoC integration, and industrial HMI controllers requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2-800 performance.
Supply support for W97BH2MBVA1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W97BH series targets mobile and embedded applications demanding low-voltage, low-power DDR2 memory with advanced power management features like PASR and ZQ calibration, aligned with JEDEC LPDDR2 standards.
FAQ
What is the maximum supported data rate for W97BH2MBVA1E?
The W97BH2MBVA1E supports LPDDR2-800 operation with a maximum data rate of 800 Mbps per pin, corresponding to a clock period (tCK) of 2.5 ns. This is confirmed in the device's AC timing specifications table, where tRCD, tRP, and tRRD are defined in clock cycles relative to this base frequency. The W97BH2MBVA1E does not support LPDDR2-1066 mode.
Does W97BH2MBVA1E support partial array self-refresh (PASR)?
Yes, W97BH2MBVA1E fully supports PASR via Mode Registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions. This feature is explicitly detailed in Section 7.4.18–7.4.19 of the datasheet and reduces refresh current by up to 50% when only one bank group is active, critical for battery-powered devices.
What ZQ calibration resistor value is required for W97BH2MBVA1E?
W97BH2MBVA1E requires a 240Ω ±1% external precision resistor connected to the ZQ pin, as specified in Section 7.4.24.5 and Electrical Characteristics Table 8.2.4.5. This resistor serves as the reference for RONPU/RONPD output driver calibration, ensuring consistent HSUL_12 impedance matching across process, voltage, and temperature variations.
Is W97BH2MBVA1E compatible with LPDDR2-1066 controllers?
No, W97BH2MBVA1E is rated and characterized only for LPDDR2-800 operation (tCK = 2.5 ns). Its timing parameters-including tRCD = 3, tRP = 3, and tFAW = 20-are specified at this speed grade. Attempting LPDDR2-1066 operation would violate guaranteed timing margins and is not supported by Winbond's characterization or reliability testing for the W97BH2MBVA1E.
What is the operating temperature range for W97BH2MBVA1E?
W97BH2MBVA1E is specified for commercial operation from 0°C to +70°C ambient temperature, as stated in Section 8.2.3 of the datasheet. It includes an integrated temperature sensor (accessible via MR4) but is not qualified for industrial (-25°C to +85°C) or extended temperature grades-those require alternate part numbers in the W97BH family.
W97BH2MBVA1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 64M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH2MBVA1E FAQ
1.How can I place an order for W97BH2MBVA1E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH2MBVA1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH2MBVA1E reliable?
The price and inventory of W97BH2MBVA1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH2MBVA1E is usually 5 days.
3.What payment methods are accepted for W97BH2MBVA1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH2MBVA1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH2MBVA1E?
W97BH2MBVA1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH2MBVA1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH2MBVA1E?
For technical support, including W97BH2MBVA1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH2MBVA1E requirements.
6.How does Aetrix verify that W97BH2MBVA1E is sourced from the original manufacturer or authorized distributors?
All W97BH2MBVA1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH2MBVA1E meets industry standards.
7.What is the process for return or replacement of W97BH2MBVA1E?
All W97BH2MBVA1E units undergo pre-shipment inspection (PSI). If there is an issue with W97BH2MBVA1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH2MBVA1E part is unused and in its original packaging.
Return procedure for W97BH2MBVA1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH2MBVA1E Tags
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