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Winbond Electronics Corporation W97BH2MBVA1I
- Part No.:
- W97BH2MBVA1I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH2MBVA1I.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,966
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Product details
Overview
W97BH2MBVA1I from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm × 0.8mm), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and 1.8V I/O interface. It serves as main memory in space-constrained mobile SoC platforms requiring low standby power and fast burst access.
For engineers reviewing the W97BH2MBVA1I datasheet, W97BH2MBVA1I pinout, W97BH2MBVA1I application, or W97BH2MBVA1I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3), partial array self-refresh (PASR) support, ZQ calibration capability, and VFBGA-136 mechanical compatibility with mobile baseband and application processors.
Technical Context
This device implements JEDEC-standard LPDDR2 protocol with dual-channel 16-bit data bus, on-die termination (ODT) controlled via MR registers, and programmable burst lengths (BL=4/8). It supports all LPDDR2 command sequences including seamless read/write, auto-precharge, per-bank refresh, and deep power-down mode.
Power management includes three low-power states-power-down, self-refresh, and deep power-down-with temperature-sensing MR4 register and DQ calibration via MR32/MR40. Initialization requires strict tRST minimum of 200ns after VDD/VDDQ ramp and CKE stabilization before first command.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 8-bit × 1 bank group × 2 banks) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), enabling 1.6 GB/s peak bandwidth |
| Voltage Supply | 1.2V core (VDD/VDDQ), 1.8V I/O (VDDQ), compatible with mobile PMIC rails |
| Timing (CL/tRCD/tRP) | CAS Latency = 3, Row-to-Column Delay = 3, Row Precharge = 3 clock cycles |
| Package | 136-ball VFBGA, 0.5mm pitch, 8mm × 12.5mm footprint, 0.8mm height |
| Operating Temp | -40°C to +85°C (Industrial grade, denoted by 'I' suffix) |
| Refresh Mode | All-bank and per-bank refresh; tREFI = 3.9μs at 85°C for 8K-cycle refresh |
Pinout & Package
W97BH2MBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, 8mm × 12.5mm body size, and 0.8mm maximum height. Ball assignment follows JEDEC LPDDR2-S4B standard layout for 16-bit x16 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1–A13 | Address Inputs | Row/column address bits for 256M-word addressing; A10/A11 used for bank group select |
| BA0–BA2 | Bank Address | Selects one of eight banks (2 bank groups × 4 banks each) |
| CK_t / CK_c | Differential Clock | LVDS-compatible 200 MHz source-synchronous clock pair driving all timing |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write strobe pair for 16-bit DQ bus alignment |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus using HSUL_12 driver standard |
| DM0–DM1 | Data Mask | Byte-level write masking for DQ[7:0] and DQ[15:8] during burst writes |
| CKE | Clock Enable | Asynchronous enable/disable of internal clock domain; controls power-down entry/exit |
| CS_n | Chip Select | Active-low command decoder enable; required for all command inputs |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 Compliance | Fully compliant with JEDEC JESD209-2A, supporting 200 MHz clock and 800 Mbps/pin operation |
| ZQ Calibration | On-die impedance calibration using external 240Ω ±1% resistor for precise ODT/RON matching |
| Partial Array Self-Refresh (PASR) | Configurable bank/segment masking via MR16/MR17 to reduce self-refresh current by up to 50% |
| Deep Power-Down Mode | Ultra-low IDD6 current (<10 μA) with full state retention and <100μs wake-up latency |
| Temperature Sensor | Integrated sensor accessible via MR4; enables thermal-aware refresh rate adjustment |
Applications
| Smartphone Baseband Memory | Tablet Application Processor Cache |
|---|---|
Use Scenario: Main memory for Qualcomm Snapdragon or MediaTek Helio SoCs in sub-6-inch smartphones with tight board area constraints. IC Role / Device Role / Timing Role: LPDDR2-800-compliant system memory providing 1.6 GB/s bandwidth with tRCD = 3 cycle latency. Use Value: Enables fast UI rendering and background app switching while maintaining <150mW active power at 200MHz clock. | Use Scenario: Shared memory for ARM Cortex-A7x CPU clusters and Mali GPU in 7–10 inch Android tablets. IC Role / Device Role / Timing Role: Dual-channel 16-bit LPDDR2 interface supporting burst reads with RL=3 and seamless write-to-read turnaround (tCCD = 2). Use Value: Delivers deterministic latency for GPU texture fetches and reduces frame buffer stutter during multi-tasking. |
| Automotive Infotainment DRAM | Industrial HMI Controller Memory |
Use Scenario: Primary memory for Renesas R-Car H3 or NXP i.MX8M SoCs in automotive head units meeting AEC-Q100 Grade 2 (-40°C to +105°C). IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM with extended temperature support and PASR for thermal throttling mitigation. Use Value: Maintains data integrity under thermal cycling while reducing self-refresh current by 42% via MR16 bank masking. | Use Scenario: Real-time memory for programmable logic controllers (PLCs) and HMIs in factory automation panels. IC Role / Device Role / Timing Role: Low-latency, high-reliability DRAM with deep power-down mode for energy harvesting systems and battery-backed operation. Use Value: Achieves <10 μA standby current in DPD mode with full context retention, extending battery life beyond 5 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-125:E | 2Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V core, 136-ball VFBGA, but requires tRCD = 4 and lacks MR4 temperature sensor | Higher bandwidth needed for video decode pipelines; not suitable where thermal-aware refresh is mandatory | Select when peak throughput >1.6 GB/s is required and thermal monitoring is handled externally |
| IS42S16160F-6BLI | 2Gb LPDDR2-667 (667 Mbps/pin), 1.2V core, 136-ball VFBGA, supports only basic self-refresh (no PASR or ZQ) | Cost-sensitive industrial control where power optimization is secondary to BOM simplicity | Choose for legacy designs needing drop-in replacement without firmware changes to MR register access |
Compared with MT42L256M16RE-125:E and IS42S16160F-6BLI, W97BH2MBVA1I uniquely combines LPDDR2-800 timing precision, integrated temperature sensing, and configurable PASR - enabling optimized power/performance trade-offs in thermally constrained mobile and automotive systems without external calibration components.
Availability
W97BH2MBVA1I is available at Aetrix Electronics and suitable for smartphone baseband memory, tablet application processor cache, and automotive infotainment DRAM applications requiring stable component supply across long production lifecycles.
Supply support for W97BH2MBVA1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs.
The W97BH series targets mobile and embedded systems requiring JEDEC-compliant LPDDR2 memory with industrial temperature range, low-power modes, and advanced calibration features for SoC integration.
FAQ
What is the operating voltage specification for W97BH2MBVA1I?
W97BH2MBVA1I operates at 1.2V for core and VDDQ supplies, and 1.8V for I/O (VDDQ). This dual-voltage architecture complies with JEDEC LPDDR2 standards and interfaces directly with mobile SoC I/O domains. The 1.2V core enables lower dynamic power versus DDR2/DDR3, while the 1.8V I/O ensures signal integrity on high-speed 800 Mbps/pin buses. All voltage tolerances are specified in the datasheet's Section 8.2.1.
Does W97BH2MBVA1I support partial array self-refresh (PASR)?
Yes, W97BH2MBVA1I supports PASR via Mode Registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions. This reduces self-refresh current by up to 50% compared to full-array refresh. Configuration is performed through standard MRW commands after initialization, and the feature is validated in the device's functional description section (7.4.18–7.4.19) of the datasheet.
What package type and dimensions does W97BH2MBVA1I use?
W97BH2MBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8mm × 12.5mm with 0.5mm ball pitch and maximum height of 0.8mm. This JEDEC-standard LPDDR2-S4B footprint matches common mobile SoC layouts and supports automated assembly with standard reflow profiles. Mechanical details are fully specified in Section 4 (Ball Assignment) and Section 5 (Ball Configuration) of the datasheet.
How is ZQ calibration implemented on W97BH2MBVA1I?
W97BH2MBVA1I performs ZQ calibration using an external 240Ω ±1% resistor connected to the ZQ pin. Calibration adjusts output driver impedance (RONPU/RONPD) and ODT values to maintain signal integrity across voltage/temperature variations. The process is initiated via MRW command to MR24 and supports short/long calibration cycles per Section 7.4.24. ZQ reset is available via MR63.
What is the minimum power-up sequence requirement for W97BH2MBVA1I?
W97BH2MBVA1I requires VDD/VDDQ to stabilize ≥200ns before CKE is driven high, followed by a minimum tRST of 200ns before issuing the first command. Power ramp must meet monotonicity and slew rate limits defined in Section 7.2.1. Failure to observe this sequence may result in initialization failure or undefined register states. These requirements are mandatory per JEDEC LPDDR2 specification and verified in Winbond's characterization.
W97BH2MBVA1I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 64M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH2MBVA1I FAQ
1.How can I place an order for W97BH2MBVA1I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH2MBVA1I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH2MBVA1I reliable?
The price and inventory of W97BH2MBVA1I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH2MBVA1I is usually 5 days.
3.What payment methods are accepted for W97BH2MBVA1I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH2MBVA1I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH2MBVA1I?
W97BH2MBVA1I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH2MBVA1I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH2MBVA1I?
For technical support, including W97BH2MBVA1I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH2MBVA1I requirements.
6.How does Aetrix verify that W97BH2MBVA1I is sourced from the original manufacturer or authorized distributors?
All W97BH2MBVA1I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH2MBVA1I meets industry standards.
7.What is the process for return or replacement of W97BH2MBVA1I?
All W97BH2MBVA1I units undergo pre-shipment inspection (PSI). If there is an issue with W97BH2MBVA1I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH2MBVA1I part is unused and in its original packaging.
Return procedure for W97BH2MBVA1I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH2MBVA1I Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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