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Winbond Electronics Corporation W97BH2MBVA1I TR
- Part No.:
- W97BH2MBVA1I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH2MBVA1I TR.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W97BH2MBVA1I TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 130-ball VFBGA (8mm × 11.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and burst lengths of 4 or 8 for smartphone application processors and embedded multimedia subsystems.
For engineers reviewing the W97BH2MBVA1I TR datasheet, W97BH2MBVA1I TR pinout, W97BH2MBVA1I TR application, or W97BH2MBVA1I TR equivalent, key selection considerations include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/5), partial array self-refresh (PASR) support, ZQ calibration capability, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
This LPDDR2 SDRAM implements dual-bank architecture with 16-bit prefetch, supports both single-ended CA/CS_n and differential CK/DQS signaling per JEDEC JESD209-2A, and uses mode registers (MR0–MR63) for configuration of burst type, read/write latency, temperature sensing, and PASR masking. It requires external 240Ω ±1% ZQ reference resistor for output driver calibration.
Power management includes deep power-down (DPD), auto-precharge, and controlled power-up/power-off sequences with defined tRAMP and tINIT delays. The device supports seamless burst reads/writes (tCCD = 2), burst terminate, and write data mask (DM) functionality for byte-level write control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 8-bit × 1 bank group × 2 banks) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), enabling 1.6 GB/s peak bandwidth on 16-bit bus |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V - strict regulation required for signal integrity and timing margin |
| Operating Temp | –40°C to +85°C - qualified for industrial and automotive infotainment applications |
| Burst Length | Configurable BL = 4 or 8 - determines minimum transaction size and burst termination behavior |
| Read Latency | RL = 3 or 5 clock cycles - sets DQS-to-read-data alignment window for controller timing closure |
| ZQ Calibration | Supports ZQ short/long calibration via MR24 - compensates for process/voltage/temperature drift in output impedance |
Pinout & Package
W97BH2MBVA1I TR uses a 130-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 11.5 mm with 0.65 mm ball pitch, compliant with JEDEC MO-270AB. Ball assignment follows standard LPDDR2-S4B layout with dedicated DQ/DQS/DM groups, dual differential clocks (CK_t/CK_c), command/address (CA[0:9]) and control (CS_n, CKE, RESET_n) balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with HSUL_12 driver; each pair shares one DM and one DQS_t/DQS_c |
| DQS0_t / DQS0_c DQS1_t / DQS1_c | Differential Strobe | Source-synchronous strobes for DQ0–7 and DQ8–15; used for read capture and write leveling |
| CK_t / CK_c | Differential Clock | Primary system clock input; defines all timing windows (tCK = 1.25 ns for LPDDR2-800) |
| CA0–CA9 | Command Address | Single-ended 10-bit bus for row/column/bank address and mode register access |
| CS_n | Chip Select | Active-low chip enable; enables command decoding only when asserted with valid CKE |
| RESET_n | Asynchronous Reset | Hardware reset input; initiates power-on initialization sequence when held low ≥ 200 μs |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Enables selective bank/segment refresh via MR16/MR17 - reduces self-refresh current by up to 70% during idle display buffer retention |
| Temperature Sensor Interface | Integrated sensor accessible via MR4 - provides real-time die temperature for dynamic thermal throttling in AP SoCs |
| Write Data Mask (DM) | Per-byte masking on DQ0–15 using DM0/DM1 - allows precise 8-bit writes without read-modify-write overhead |
| Deep Power-Down Mode | Reduces IDD current to ≤10 μA - extends battery life during extended standby in portable devices |
| HSUL_12 I/O Standard | Low-voltage swing (≈0.4V) differential signaling - meets LPDDR2-800 timing at 533 MHz clock frequency with reduced EMI |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment Display Buffer |
|---|---|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multimedia stacks. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit × 800 Mbps interface synchronized to 400 MHz CK clock; handles burst reads/writes with RL=3 and tRCD=3. Use Value: Enables 1.6 GB/s sustained bandwidth for UI rendering and video decode while maintaining <25 mA IDD2N current at 85°C. | Use Scenario: Frame buffer storage for LCD/HDMI display controllers in automotive head units with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Dual-bank LPDDR2 acting as double-buffered pixel memory; leverages PASR to retain active frame during GPU idle periods. Use Value: Reduces self-refresh current from 45 μA to 13 μA via MR16 bank masking - extends display-on battery runtime by 3.5× in 12V vehicle systems. |
| Industrial Tablet Graphics Subsystem | Medical Imaging Local Buffer |
Use Scenario: High-resolution graphics memory for FPGA-based display pipelines in ruggedized tablets used in field diagnostics. IC Role / Device Role / Timing Role: LPDDR2-800 interface with ZQ calibration (MR24) ensuring stable RONPU/RONPD across –40°C to +85°C ambient. Use Value: Maintains tDQSCKmin/tDQSCKmax skew < ±75 ps over full temperature range - eliminates read capture failures in 1080p60 video streaming. | Use Scenario: Real-time DICOM image buffering in portable ultrasound machines requiring deterministic latency and data integrity. IC Role / Device Role / Timing Role: Error-resilient memory with burst terminate (BST) and write mask (DM) support for partial-frame updates during Doppler scan acquisition. Use Value: Enables sub-100 ns write abort via BST command - prevents corrupted pixel lines during rapid probe repositioning events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1.2V, 2Gb, LPDDR2-1066 (1066 Mbps/pin); 130-ball VFBGA; same pinout but higher speed grade | Requires tighter tDQSCK tolerance (±45 ps vs. ±75 ps) and faster controller timing closure | Select when system demands >1.6 GB/s bandwidth and supports RL=4/6; verify ZQ resistor compatibility (240Ω vs. 200Ω) |
| K4P2G324EC-AC25 | 1.2V, 2Gb, LPDDR2-800; 130-ball VFBGA; identical speed grade but different MR register map and PASR implementation | Lacks MR4 temperature sensor; uses different PASR segment granularity (16MB vs. 32MB blocks) | Prefer for cost-sensitive designs where die temperature monitoring is unnecessary and legacy BIOS support exists |
Compared with MT42L128M16D1KJ-107 WT:A and K4P2G324EC-AC25, W97BH2MBVA1I TR offers balanced performance with integrated temperature sensing and finer PASR control - making it optimal for thermally constrained mobile SoC platforms needing adaptive power management.
Availability
W97BH2MBVA1I TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment display buffers, and industrial tablet graphics subsystems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W97BH2MBVA1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
W97BH2MBVA1I TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for low-power, high-bandwidth memory interfaces in space-constrained portable electronics with stringent thermal and reliability requirements.
FAQ
What is the operating voltage range for W97BH2MBVA1I TR?
W97BH2MBVA1I TR operates at VDD/VDDQ = 1.2V ±0.06V (1.14V to 1.26V). This tight tolerance is mandatory for meeting LPDDR2-800 AC timing specifications including tDQSCK and tRCD. Deviation beyond this range risks setup/hold violations and increased bit error rates during high-speed transfers. The W97BH2MBVA1I TR datasheet specifies that VDD must ramp monotonically during power-up with tRAMP ≥ 100 ms to ensure reliable initialization.
Does W97BH2MBVA1I TR support partial array self-refresh (PASR)?
Yes, W97BH2MBVA1I TR supports PASR via mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions while idling others. This feature reduces self-refresh current from typical 45 μA to as low as 13 μA depending on mask configuration. The W97BH2MBVA1I TR implementation uses 32MB segment granularity and supports up to 4 masked segments per refresh cycle, directly improving battery life in display buffer applications.
What ZQ reference resistor value is required for W97BH2MBVA1I TR calibration?
W97BH2MBVA1I TR requires an external 240Ω ±1% ZQ reference resistor connected between ZQ pin and VSS, with ≤2 pF capacitive loading. This value is specified in section 7.4.24.5 of the official datasheet and is critical for accurate RONPU/RONPD calibration across voltage and temperature. Using a 200Ω resistor - as found in some competing LPDDR2 parts - will cause output driver mismatch and violate tDQSQ timing margins. The W97BH2MBVA1I TR supports both ZQ short (128 cycles) and long (1024 cycles) calibration modes via MR24.
Is W97BH2MBVA1I TR compatible with LPDDR2-1066 controllers?
No, W97BH2MBVA1I TR is rated for LPDDR2-800 operation only (800 Mbps/pin, tCK = 1.25 ns). While it may electrically interface with LPDDR2-1066 controllers, its internal timing parameters - including tRCD = 3, tRP = 3, and tRRD = 2 - are validated only at 800 Mbps. Attempting 1066 Mbps operation violates the W97BH2MBVA1I TR's published AC characteristics and risks data corruption due to insufficient DQS-to-DQ timing margin (tDQSCK). For 1066 Mbps, Winbond recommends W97BH2MBVA2I TR or equivalent.
What is the function of the RESET_n pin on W97BH2MBVA1I TR?
The RESET_n pin on W97BH2MBVA1I TR is an asynchronous, active-low hardware reset input that initiates the full power-on initialization sequence when held low for ≥200 μs. Unlike CKE-controlled entry into power-down states, RESET_n forces internal state machine reset, clears mode registers, and re-executes the complete power-ramp and training flow. This pin is essential for recovery after uncontrolled power loss and must be driven by a dedicated reset supervisor IC in production systems using W97BH2MBVA1I TR.
W97BH2MBVA1I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 64M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH2MBVA1I TR FAQ
1.How can I place an order for W97BH2MBVA1I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH2MBVA1I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH2MBVA1I TR reliable?
The price and inventory of W97BH2MBVA1I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH2MBVA1I TR is usually 5 days.
3.What payment methods are accepted for W97BH2MBVA1I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH2MBVA1I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH2MBVA1I TR?
W97BH2MBVA1I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH2MBVA1I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH2MBVA1I TR?
For technical support, including W97BH2MBVA1I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH2MBVA1I TR requirements.
6.How does Aetrix verify that W97BH2MBVA1I TR is sourced from the original manufacturer or authorized distributors?
All W97BH2MBVA1I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH2MBVA1I TR meets industry standards.
7.What is the process for return or replacement of W97BH2MBVA1I TR?
All W97BH2MBVA1I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97BH2MBVA1I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH2MBVA1I TR part is unused and in its original packaging.
Return procedure for W97BH2MBVA1I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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