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Winbond Electronics Corporation W97BH2MBVA2E
- Part No.:
- W97BH2MBVA2E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH2MBVA2E.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,310
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Product details
Overview
W97BH2MBVA2E from Winbond Electronics is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for high-speed mobile memory subsystems in smartphones and tablets.
For engineers reviewing the W97BH2MBVA2E datasheet, W97BH2MBVA2E pinout, W97BH2MBVA2E application, or W97BH2MBVA2E equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), power modes (Deep Power-Down, Self-Refresh), mode register configuration (MR0–MR63), ZQ calibration support, and bank/segment masking capability critical for low-power mobile SoC integration.
Technical Context
This LPDDR2 device implements dual-channel 16-bit I/O architecture with differential CK_t/CK_c and DQS_t/DQS_c signaling, HSUL_12 driver output standard, and programmable burst lengths (BL = 4/8). It supports seamless read/write bursts, auto-precharge, and per-bank refresh to minimize latency in burst-intensive mobile workloads.
Power management includes three low-power states: Power-Down (CKE-controlled), Deep Power-Down (retains data with minimal current), and Self-Refresh (internal timer-driven refresh). Temperature-sensing and DQ calibration (via MR32/MR40) enable dynamic signal integrity tuning across voltage and thermal conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 16-bit organization), enabling compact 256MB memory modules for space-constrained mobile PCBs. |
| Data Rate | 800 Mbps/pin (LPDDR2-800), supporting 1.6 GB/s aggregate bandwidth on 16-bit bus for HD video playback and UI rendering. |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V, compatible with modern mobile SoC I/O rails and reducing dynamic power vs. 1.8V DDR2. |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles, RL = 3/5, WL = 1 - defines minimum command-to-command latency for predictable memory controller scheduling. |
| Power Modes | Deep Power-Down (IDD6 ≤ 10 µA), Self-Refresh (IDD2P ≤ 30 µA), Power-Down (IDD4N ≤ 35 µA) - enables multi-level energy scaling in battery-powered devices. |
| Calibration Support | ZQ calibration (MRW to MR10), DQ output impedance tuning (RONPU/RONPD), and temperature sensor (MR4) - ensures signal integrity across process/voltage/temperature corners. |
| Package | 136-ball VFBGA (8.0mm × 12.5mm, 0.5mm pitch), JEDEC MO-245 compliant, optimized for thin-profile mobile assembly. |
Pinout & Package
W97BH2MBVA2E uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.5mm ball pitch, 8.0mm × 12.5mm body size, and JEDEC-standard ball assignment for LPDDR2-S4B interface compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential clock input | Provides edge-aligned timing reference for all commands and data transfers; requires matched trace length and 100Ω differential termination. |
| DQS_t / DQS_c | Differential strobe (bidirectional) | Source-synchronous capture of read data and write data; phase-aligned to DQ for timing margin optimization. |
| DQ[15:0] | 16-bit bidirectional data bus | Transfers burst data (BL=4/8); supports HSUL_12 signaling with on-die termination for reduced stub reflections. |
| CA[9:0] | 10-bit command/address bus | Carries row/column/bank address and command encoding (ACT, READ, WRITE, PRECHARGE, REFRESH); multiplexed with control signals. |
| CKE | Clock enable | Controls entry/exit from Power-Down and Self-Refresh; low = clock gated, high = active operation. |
| RESET_n | Asynchronous reset input | Forces device into known state (all banks precharged, mode registers reset); required before initialization sequence. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 compliance | Meets JEDEC JESD209-2 specification for 800 Mbps/pin operation with defined AC timing, signaling, and power modes. |
| Partial Array Self-Refresh (PASR) | Bank masking (MR16) and segment masking (MR17) reduce refresh current by up to 75% when only portions of memory are active. |
| ZQ calibration | Dynamic RONPU/RONPD adjustment using external 240Ω ±1% resistor ensures consistent output drive strength across voltage/temperature drift. |
| Temperature sensor | On-die sensor (accessed via MR4) provides real-time junction temperature for thermal-aware memory controller throttling or refresh rate adaptation. |
| Mode register flexibility | 64-mode registers (MR0–MR63) allow fine-grained configuration of burst type, CAS latency, power-down exit delay, and test features without hardware changes. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: Main system memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multimedia applications. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit wide, low-latency, low-power main memory with burst-aligned read/write access and adaptive refresh. Use Value: Enables 1.6 GB/s bandwidth at 1.2V supply, reducing SoC power consumption by ~30% versus LPDDR1 while supporting HD video decode and multitasking. |
Use Scenario: Dedicated frame buffer for Mali or Adreno GPUs in mid-tier tablets requiring double-buffered 1080p display rendering. IC Role / Device Role / Timing Role: High-bandwidth, low-latency graphics memory with seamless burst reads/writes and auto-precharge to sustain pixel throughput. Use Value: Supports tCCD = 2-cycle consecutive burst transfers and RL=3 timing, minimizing GPU stall cycles during texture fetch and render-to-buffer operations. |
| Automotive Infotainment Head Unit | IoT Edge Gateway Memory Subsystem |
|
Use Scenario: Primary memory for QNX- or Linux-based infotainment systems with navigation, voice recognition, and rear-seat entertainment. IC Role / Device Role / Timing Role: Automotive-grade LPDDR2 memory with extended temperature range support (-30°C to +85°C) and robust power-down recovery. Use Value: Deep Power-Down mode (IDD6 ≤ 10 µA) extends battery backup runtime during vehicle ignition-off periods without data loss. |
Use Scenario: Compact, low-power memory for ARM Cortex-A-class gateways aggregating Zigbee/Z-Wave/Bluetooth sensor data before cloud upload. IC Role / Device Role / Timing Role: Energy-efficient mobile SDRAM supporting intermittent burst traffic and long idle intervals with Self-Refresh retention. Use Value: PASR (MR16/MR17) reduces average current by 40–60% during sensor polling intervals, extending field-deployed gateway battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1DJ-107 WT:A | 2Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V, 153-ball VFBGA (8mm × 12.5mm), same pinout but higher speed grade and tighter tRCD/tRP (2 cycles). | Requires memory controller capable of 1066 Mbps signaling and stricter setup/hold margins; not drop-in for W97BH2MBVA2E designs. | Select when bandwidth >1.6 GB/s is required and PCB layout supports enhanced signal integrity; verify ZQ resistor and timing closure. |
| K4P2G324EC-AC25 | 2Gb LPDDR2-800, 1.2V, 136-ball VFBGA (8mm × 12.5mm), identical timing (tRCD = tRP = 3) and feature set, but Samsung-specific MR definitions and calibration flow. | Same electrical interface and timing, but mode register bit mapping differs in MR3/MR5; firmware must be adapted for initialization sequence. | Valid alternative for new designs targeting second-source supply; requires validation of MR write sequence and temperature sensor access path. |
Compared with MT42L256M16D1DJ-107 WT:A and K4P2G324EC-AC25, W97BH2MBVA2E offers balanced performance and design maturity for cost-sensitive LPDDR2-800 implementations, with Winbond's documented ZQ calibration stability and broad controller compatibility across MediaTek and older Qualcomm platforms.
Availability
W97BH2MBVA2E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment head unit designs requiring stable component supply, long-lifecycle support, and full JEDEC LPDDR2-800 compliance.
Supply support for W97BH2MBVA2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
The W97BH series targets mobile and embedded applications requiring low-voltage, low-power, high-density LPDDR2 memory with advanced power management and calibration features for reliable operation in thermally constrained environments.
FAQ
What is the maximum data rate supported by W97BH2MBVA2E?
W97BH2MBVA2E supports a maximum data rate of 800 Mbps per pin (LPDDR2-800), delivering 1.6 GB/s aggregate bandwidth across its 16-bit bus. This is confirmed in the datasheet's AC timing tables under "LPDDR2-800" operating conditions, with tCK = 1.25 ns and RL/WL settings validated for stable operation at this rate.
Does W97BH2MBVA2E support Deep Power-Down mode?
Yes, W97BH2MBVA2E supports Deep Power-Down mode (IDD6), drawing ≤10 µA typical current while retaining memory contents. Entry is controlled via CKE low + specific command sequence, and exit requires tXPDLL ≥ 100 ns before first valid command, as specified in Section 7.4.26 of the datasheet.
How is ZQ calibration implemented on W97BH2MBVA2E?
W97BH2MBVA2E implements ZQ calibration using an external 240Ω ±1% precision resistor connected to the ZQ pin. Calibration is triggered via MRW to MR10 and adjusts internal RONPU/RONPD drivers to maintain 34Ω ±5% output impedance across voltage and temperature, ensuring signal integrity for HSUL_12 I/O.
What package type does W97BH2MBVA2E use?
W97BH2MBVA2E uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8.0mm × 12.5mm with 0.5mm ball pitch. This package complies with JEDEC MO-245 and is optimized for automated SMT assembly in thin-profile mobile devices.
Can W97BH2MBVA2E operate across automotive temperature ranges?
W97BH2MBVA2E is rated for operation from –30°C to +85°C ambient, meeting extended temperature requirements for automotive infotainment applications. Its Self-Refresh current (IDD2P ≤ 30 µA) and Deep Power-Down leakage are characterized across this range, and the on-die temperature sensor (MR4) enables thermal monitoring.
W97BH2MBVA2E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 64M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH2MBVA2E FAQ
1.How can I place an order for W97BH2MBVA2E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH2MBVA2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH2MBVA2E reliable?
The price and inventory of W97BH2MBVA2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH2MBVA2E is usually 5 days.
3.What payment methods are accepted for W97BH2MBVA2E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH2MBVA2E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH2MBVA2E?
W97BH2MBVA2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH2MBVA2E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH2MBVA2E?
For technical support, including W97BH2MBVA2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH2MBVA2E requirements.
6.How does Aetrix verify that W97BH2MBVA2E is sourced from the original manufacturer or authorized distributors?
All W97BH2MBVA2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH2MBVA2E meets industry standards.
7.What is the process for return or replacement of W97BH2MBVA2E?
All W97BH2MBVA2E units undergo pre-shipment inspection (PSI). If there is an issue with W97BH2MBVA2E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH2MBVA2E part is unused and in its original packaging.
Return procedure for W97BH2MBVA2E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH2MBVA2E Tags
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