Winbond Electronics Corporation W97BH2MBVA2E TR

Overview

W97BH2MBVA2E TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for high-speed mobile memory subsystems in smartphones and tablets.

For engineers reviewing the W97BH2MBVA2E TR datasheet, W97BH2MBVA2E TR pinout, W97BH2MBVA2E TR application, or W97BH2MBVA2E TR equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), power modes (Deep Power-Down, Self-Refresh), mode register configuration (MR0–MR63), and ball assignment for layout validation and low-power system integration.

Technical Context

The W97BH2MBVA2E TR implements LPDDR2 JEDEC JESD209-2A compliance with dual-channel 16-bit I/O, HSUL_12 signaling, and differential CK/DQS pairs. It supports burst lengths of 4/8/16, programmable read/write latencies (RL/WL), and partial array self-refresh (PASR) via MR16/MR17 for dynamic power optimization.

Its command interface includes Activate, Read, Write, Precharge, Refresh, Mode Register Read/Write, and ZQ calibration commands. Timing control relies on tFAW, tRRD, tCCD, and tRTP constraints-validated for 800 Mbps operation with tCK = 2.5 ns and tDQSCKmin/tDQSCKmax alignment per JEDEC spec.

Key Specifications

Pinout & Package

W97BH2MBVA2E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.5 mm ball pitch, optimized for compact mobile PCB layouts and thermal dissipation in stacked-die configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L256M16RE-107 WT:A and K4P2G324EC-ACF6, the W97BH2MBVA2E TR uniquely combines industrial temperature range, PASR, and integrated temperature sensing in the same 136-ball footprint-enabling lower-system-power designs where thermal awareness and footprint efficiency are critical.

Availability

W97BH2MBVA2E TR is available at Aetrix Electronics and suitable for smartphone main memory, tablet GPU frame buffers, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2 interoperability.

Supply support for W97BH2MBVA2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile LPDDR products for consumer, industrial, and automotive markets.

The W97BH2MBVA2E TR belongs to Winbond's LPDDR2-S4B product line, engineered specifically for power-constrained mobile platforms requiring JEDEC-compliant 1.2V operation, high-density packaging, and advanced power-state management.

FAQ

What is the ball count and package type of the W97BH2MBVA2E TR?

The W97BH2MBVA2E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with dimensions of 8.0 mm × 12.5 mm and 0.5 mm ball pitch. This compact footprint supports high-density mobile PCB layouts and is mechanically and thermally optimized for stacked-die integration in thin-profile devices. The ball assignment matches JEDEC LPDDR2-2A standard pinout for CA, DQ, CK, DQS, and control signals.

Does the W97BH2MBVA2E TR support partial array self-refresh (PASR)?

Yes, the W97BH2MBVA2E TR supports Partial Array Self-Refresh via Mode Registers MR16 (Bank Mask) and MR17 (Segment Mask). This feature allows selective refresh of active memory regions only, reducing refresh current by up to 75% compared to full-array refresh. PASR is enabled through MRW commands and is validated across the full –40°C to +85°C industrial temperature range.

What are the supported read and write latencies for the W97BH2MBVA2E TR?

The W97BH2MBVA2E TR supports Read Latency (RL) of 3 or 5 clock cycles and Write Latency (WL) of 1, both configurable via Mode Register MR0. RL=3 is used for LPDDR2-800 operation (tCK = 2.5 ns), ensuring minimal DQS-to-data valid delay. WL=1 enables efficient write command scheduling with tCCD = 2 cycle separation between consecutive writes.

How does ZQ calibration function on the W97BH2MBVA2E TR?

ZQ calibration on the W97BH2MBVA2E TR adjusts output driver impedance (RONPU/RONPD) using an external 240Ω ±1% reference resistor connected to the ZQ pin. Calibration occurs at power-up, after MRW reset, and optionally during runtime. It compensates for process/voltage/temperature variations, maintaining HSUL_12 signal integrity with controlled slew rates and overshoot limits per JEDEC spec.

Is the W97BH2MBVA2E TR compatible with standard LPDDR2 controllers?

Yes, the W97BH2MBVA2E TR is fully compliant with JEDEC JESD209-2A LPDDR2 specification and interoperable with standard LPDDR2 controllers from major SoC vendors including MediaTek, Qualcomm, and NXP. Its command set (Activate, Read, Write, Precharge, Refresh, MRR/MRW), timing parameters (tRCD=3, tRP=3, tFAW=20 ns), and electrical characteristics (HSUL_12, 1.2V) meet baseline controller requirements without firmware modification.