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Winbond Electronics Corporation W97BH2MBVA2I
- Part No.:
- W97BH2MBVA2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH2MBVA2I.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W97BH2MBVA2I from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for low-noise mobile memory subsystems in smartphones and tablets.
For engineers reviewing the W97BH2MBVA2I datasheet, W97BH2MBVA2I pinout, W97BH2MBVA2I application, or W97BH2MBVA2I equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), bank architecture (4 banks), power modes (Deep Power-Down, Self-Refresh), and ball-mapped I/O roles critical for memory controller interface design and layout validation.
Technical Context
This device implements JEDEC-standard LPDDR2-S4B protocol with dual-channel 16-bit data bus, 128Mb × 16 organization, and support for burst lengths of 4 and 8. It uses HSUL_12 I/O standard with differential CK/DQS and single-ended CA/CS_n signaling.
It features programmable mode registers (MR0–MR63) for configuration of burst type, temperature compensation, PASR masking, ZQ calibration, and DQ timing calibration. Initialization requires controlled power ramp, CKE assertion, and MRW sequences per JEDEC JESD209-2A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (128Mb × 16), enabling compact 256MB memory modules in space-constrained mobile PCBs. |
| Data Rate | 800 Mbps/pin (LPDDR2-800), delivering 1.6 GB/s peak bandwidth over 16-bit bus for application processor memory bandwidth requirements. |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V, compatible with modern SoC I/O domains and requiring tight regulation for signal integrity. |
| Timing (tRCD/tRP) | tRCD = tRP = 3 cycles @ 400 MHz clock, defining minimum row activation-to-read/write and precharge delays for controller timing budgeting. |
| Burst Length | Configurable BL = 4 or 8, supporting efficient cache-line transfers (64-byte or 128-byte) aligned with ARM Cortex-A CPU L1/L2 cache line sizes. |
| Operating Temp | -40°C to +95°C (Industrial grade), qualified for sustained operation in thermally demanding handheld enclosures without derating. |
| Power Modes | Supports Deep Power-Down (IDD6 ≤ 10 µA), Self-Refresh (IDD2P ≤ 35 µA), and Partial Array Self-Refresh (PASR), reducing system standby power by >90% vs active mode. |
Pinout & Package
Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm, 0.5 mm ball pitch, RoHS-compliant, moisture sensitivity level 3 (MSL3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (bidirectional) | 16-bit data bus using HSUL_12 driver; each pair supports DQS-strobed read/write with tDQSCKmin/tDQSCKmax alignment for setup/hold compliance. |
| DQS0/DQS1 | Differential data strobe (read/write) | Source-synchronous strobes for DQ0–7 and DQ8–15; require matched trace length to DQ and controlled differential impedance (≈100 Ω). |
| CK_t / CK_c | Differential clock input | System reference clock (up to 400 MHz); used for all command latching and timing generation; requires AC-coupling and 100 Ω diff termination. |
| CA0–CA11 | Command/address bus (single-ended) | 12-bit multiplexed address/command bus; sampled on CK rising edge; includes bank address (BA0–BA1), row/column bits, and mode register access. |
| CS_n | Chip select (active-low) | Enables command decoding; must be stable for tIS/TH before/after CK edge; supports multi-bank command arbitration in multi-chip configurations. |
| CKE | Clock enable (active-high) | Controls entry/exit from Power-Down and Self-Refresh; low during deep sleep; high during active and precharge states. |
| RESET_n | Asynchronous reset (active-low) | Forces device into known state; requires ≥100 ns pulse width; used during cold boot or recovery after brown-out conditions. |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | On-die impedance tuning via external 240Ω ±1% RZQ resistor enables precise RONPU/RONPD matching to PCB trace impedance, reducing signal reflections and improving eye margin. |
| Temperature Sensor | Integrated sensor feeds MR4_Device Temperature register, allowing dynamic refresh rate adjustment (tREFI scaling) to maintain data retention across -40°C to +95°C without external components. |
| PASR (Bank/Segment) | Partial Array Self-Refresh allows selective bank or segment retention during low-power states, cutting IDD2P current by up to 50% versus full-array self-refresh in background tasks. |
| Mode Register Read (MRR) | Allows runtime verification of MR0–MR9 settings (e.g., burst length, drive strength, ODT) without halting memory operation-critical for debug and field validation. |
| Deep Power-Down Exit Time | tDPD = 500 µs max, enabling rapid wake-up from ultra-low-power state while maintaining <10 µA quiescent current-ideal for always-on sensor hubs and modem subsystems. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
|
Use Scenario: Main memory for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS and multimedia applications. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit wide, low-voltage, high-bandwidth memory interface synchronized to 400 MHz CK with RL=3/5 and tRCD=3 timing. Use Value: Enables 1.6 GB/s sustained bandwidth and sub-10 µA Deep Power-Down current, directly supporting multi-core CPU performance and battery life targets in sub-6mm chassis. |
Use Scenario: Dedicated frame buffer for Mali or Adreno GPUs rendering UI, video playback, and gaming graphics in 10-inch tablets. IC Role / Device Role / Timing Role: High-speed, low-latency memory serving as GPU-accessible framebuffer with burst-8 reads optimized for 128-byte texture fetches. Use Value: Reduces GPU memory latency by 22% vs LPDDR1 due to tCCD=2 and seamless burst chaining, improving 60 fps rendering consistency under thermal throttling. |
| Automotive Infotainment Head Unit | IoT Edge Gateway RAM |
|
Use Scenario: Primary working memory in AEC-Q100 Grade 3 qualified infotainment systems running QNX or Android Automotive OS. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 memory supporting -40°C to +95°C operation, with PASR and temperature-compensated refresh for extended reliability. Use Value: Eliminates need for external thermal monitoring ICs and reduces BOM cost by integrating temperature sensing and adaptive refresh control. |
Use Scenario: Runtime memory for Linux-based edge gateways aggregating sensor data from Zigbee/Z-Wave networks and forwarding to cloud via LTE/Wi-Fi. IC Role / Device Role / Timing Role: Low-quiescent-current SDRAM enabling <50 µA average system sleep current when paired with host SoC's suspend-to-RAM flow. Use Value: Achieves >10-year battery life in coin-cell-powered deployments via Deep Power-Down mode and hardware-controlled auto-precharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | Same 2Gb density, 136-ball VFBGA, LPDDR2-800, but uses 1.2V only (no 1.35V option); tRCD/tRP = 3 cycles; identical burst and PASR support. | Qualified for automotive (AEC-Q100 Grade 2); wider industrial temp range (-40°C to +105°C); same pinout but different ball assignment for VSS/VDDQ distribution. | Select for automotive programs requiring AEC-Q100 qualification and extended high-temp margin beyond W97BH2MBVA2I's +95°C limit. |
| K4P2G324EC-AC25 | 2Gb LPDDR2-1066 (1066 Mbps/pin), 136-ball VFBGA; higher speed grade; tRCD/tRP = 4 cycles; supports RL=4/6; no integrated temperature sensor. | Targets performance-critical applications needing >2 GB/s bandwidth; lacks MR4-based thermal refresh scaling; requires external thermal management for >85°C operation. | Select when bandwidth >1.6 GB/s is mandatory and thermal environment is controlled; avoid if temperature-adaptive refresh is required. |
Compared with MT42L128M16D1KJ-107 WT:A and K4P2G324EC-AC25, the W97BH2MBVA2I offers balanced speed (800 Mbps), industrial temperature support (+95°C), integrated temperature sensing, and lower power Deep Power-Down-making it optimal for cost-sensitive, thermally constrained mobile and IoT designs where 1066 Mbps is unnecessary.
Availability
W97BH2MBVA2I is available at Aetrix Electronics and suitable for smartphone main memory, tablet GPU frame buffers, automotive infotainment systems, and IoT edge gateway RAM requiring stable component supply, long-lifecycle availability, and consistent electrical performance across production lots.
Supply support for W97BH2MBVA2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR SDRAM, and mobile LPDDR products for consumer, industrial, and automotive markets.
The W97BH series is Winbond's LPDDR2 product line designed specifically for power-constrained mobile platforms, emphasizing low-voltage operation (1.2V), advanced power management (Deep PD, PASR), and JEDEC-compliant interoperability with major application processors.
FAQ
What is the maximum data rate supported by W97BH2MBVA2I?
The W97BH2MBVA2I supports LPDDR2-800 operation, delivering 800 Mbps per data pin. This corresponds to a 400 MHz differential clock frequency and yields 1.6 GB/s peak bandwidth across its 16-bit bus. The device does not support LPDDR2-1066; attempting higher frequencies violates timing specifications and risks data corruption.
Does W97BH2MBVA2I include an integrated temperature sensor?
Yes, the W97BH2MBVA2I includes an on-die temperature sensor accessible via Mode Register MR4 (MA[7:0] = 04H). This sensor enables automatic refresh interval adjustment (tREFI scaling) across its -40°C to +95°C operating range, eliminating the need for external thermal monitoring circuitry in most implementations.
What package type and ball count does W97BH2MBVA2I use?
The W97BH2MBVA2I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.5 mm ball pitch. Its ball assignment follows JEDEC MO-245AA, and the 'VA2I' suffix denotes Industrial temperature grade (-40°C to +95°C) and lead-free, RoHS-compliant construction.
Can W97BH2MBVA2I operate in Deep Power-Down mode, and what is its exit time?
Yes, the W97BH2MBVA2I supports Deep Power-Down mode (IDD6), achieving ≤10 µA typical current draw. Its maximum exit time from Deep Power-Down to active operation is 500 µs, as specified in the datasheet under tDPD parameter-enabling fast wake-up for responsive user interfaces in mobile devices.
What is the purpose of ZQ calibration in W97BH2MBVA2I?
ZQ calibration in the W97BH2MBVA2I adjusts internal output driver impedance (RONPU/RONPD) using an external 240Ω ±1% precision resistor (RZQ) to match PCB trace impedance. This ensures signal integrity for DQ/DQS/CK signals, minimizes reflections, and maintains timing margins-especially critical at 800 Mbps data rates.
W97BH2MBVA2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 64M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH2MBVA2I FAQ
1.How can I place an order for W97BH2MBVA2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH2MBVA2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH2MBVA2I reliable?
The price and inventory of W97BH2MBVA2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH2MBVA2I is usually 5 days.
3.What payment methods are accepted for W97BH2MBVA2I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH2MBVA2I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH2MBVA2I?
W97BH2MBVA2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH2MBVA2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH2MBVA2I?
For technical support, including W97BH2MBVA2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH2MBVA2I requirements.
6.How does Aetrix verify that W97BH2MBVA2I is sourced from the original manufacturer or authorized distributors?
All W97BH2MBVA2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH2MBVA2I meets industry standards.
7.What is the process for return or replacement of W97BH2MBVA2I?
All W97BH2MBVA2I units undergo pre-shipment inspection (PSI). If there is an issue with W97BH2MBVA2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH2MBVA2I part is unused and in its original packaging.
Return procedure for W97BH2MBVA2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH2MBVA2I Tags
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