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Winbond Electronics Corporation W97BH2MBVA2I TR
- Part No.:
- W97BH2MBVA2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH2MBVA2I TR.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,137
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Product details
Overview
W97BH2MBVA2I TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (400 MHz clock), supporting burst lengths of 4/8 and on-die termination for high-speed mobile memory subsystems in smartphones and tablets.
For engineers reviewing the W97BH2MBVA2I TR datasheet, W97BH2MBVA2I TR pinout, W97BH2MBVA2I TR application, or W97BH2MBVA2I TR equivalent, key selection criteria include LPDDR2-800 timing compliance, PASR support for dynamic power gating, ZQ calibration capability, tRCD/tRP = 3-cycle latency, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
This device implements the JEDEC LPDDR2 S4B standard with dual-channel 16-bit I/O architecture, supporting both single-ended CA/CS_n signaling and differential CK_t/CK_c and DQS_t/DQS_c interfaces. It features programmable mode registers (MR0–MR63) for configuration of burst type, read/write latency, temperature compensation, and partial array self-refresh (PASR).
Power management includes deep power-down (DPD), auto-precharge, and controlled power ramp sequences compliant with mobile SoC interface requirements. Calibration support covers ZQ reference resistor adjustment, DQ output driver impedance tuning (RONPU/RONPD), and temperature-sensor-assisted refresh control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 8-bit organization) |
| Data Rate | 800 Mbps/pin (LPDDR2-800, 400 MHz clock) |
| Supply Voltage | 1.2 V ± 0.06 V (VDD/VDDQ), compatible with mobile SoC I/O rails |
| Operating Temp | –40°C to +85°C (industrial grade, suitable for extended ambient environments) |
| tRCD / tRP | 3 clock cycles (enables fast row activation and precharge in burst-intensive workloads) |
| Burst Length | Configurable BL=4 or BL=8 (supports efficient cache-line and page-access patterns) |
| PASR Support | Bank- and segment-level masking (MR16/MR17) for selective self-refresh power reduction |
Pinout & Package
W97BH2MBVA2I TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.5 mm ball pitch, optimized for compact mobile PCB layouts and thermal dissipation in thin-profile devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD / VDDQ | Core & I/O supply | Dual 1.2 V supplies decoupled separately for noise isolation between logic and I/O domains |
| CK_t / CK_c | Differential clock input | LVDS-compatible differential pair accepting 400 MHz system clock with tight skew tolerance |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe aligned to DQ edges for timing margin optimization |
| CA[0:9] | Command/address bus | 10-bit single-ended bus carrying commands (ACT, PRE, REF), bank address, and row/column address |
| DQ[0:7] | Data I/O | 8-bit bidirectional data bus using HSUL_12 drivers with on-die termination and ZQ-calibrated drive strength |
| DM | Data mask | Per-byte write mask enabling partial writes without read-modify-write overhead |
Key Features
| Feature | Design Value |
|---|---|
| ZQ Calibration | Dynamic RONPU/RONPD impedance tuning via external 240 Ω ±1% reference resistor for signal integrity across voltage/temperature |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current up to 75% by masking inactive banks/segments via MR16/MR17 register writes |
| Deep Power-Down Mode | Ultra-low standby current (<10 µA) with full state retention, enabling rapid wake-up in always-on mobile applications |
| Temperature Sensor | On-die sensor feeding MR4 register for adaptive refresh rate scaling and thermal-aware power management |
| HSUL_12 I/O Standard | Low-voltage swing (0.6 V) differential signaling compatible with LPDDR2-800 timing and mobile SoC PHYs |
Applications
| Smartphone Application | Tablet Memory Subsystem |
|---|---|
Use Scenario: Main application memory in mid-tier Android smartphones with MediaTek or Qualcomm SoCs requiring LPDDR2-800 bandwidth and low active power. IC Role / Device Role / Timing Role: Primary system RAM interfacing directly to SoC memory controller via 16-bit dual-channel LPDDR2 bus. Use Value: Enables 800 Mbps/pin throughput with tRCD = 3-cycle latency and PASR-driven 40% average power reduction during background app refresh. | Use Scenario: Shared graphics and application memory in 7–10 inch Android tablets where thermal envelope limits sustained DDR3 power draw. IC Role / Device Role / Timing Role: Dual-rank LPDDR2 memory component supporting GPU frame buffer and OS runtime heap with deep power-down entry between UI idle periods. Use Value: Delivers 2 Gb density in VFBGA footprint while maintaining <10 µA deep power-down current and ZQ-calibrated signal integrity at 400 MHz clock. |
| Automotive Infotainment | Industrial HMI Display |
Use Scenario: Application memory in AEC-Q200 qualified infotainment head units running Linux-based IVI stacks with real-time audio/video decode. IC Role / Device Role / Timing Role: System memory co-located with application processor, operating across –40°C to +85°C with validated LPDDR2 command timing margins. Use Value: Supports industrial temperature operation with MR4 temperature reporting and adaptive refresh, eliminating external thermal monitoring circuitry. | Use Scenario: Memory for ARM Cortex-A series HMI controllers in factory HMIs requiring long-term reliability and stable memory access under variable ambient conditions. IC Role / Device Role / Timing Role: Non-volatile-cached RAM supplementing flash storage, configured with auto-precharge and seamless burst reads for deterministic GUI rendering latency. Use Value: Achieves tCCD = 2-cycle seamless burst switching and RL=3/WL=1 timing for sub-10 ns read-to-write turnaround in real-time display pipelines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-107 IT:D | 2Gb LPDDR2-1066 (533 MHz), 1.2V, 134-ball VFBGA (8×12.5mm), supports tRCD/tRP = 2 cycles | Higher bandwidth but tighter timing margins; requires more aggressive PCB layout and SoC PHY tuning | Select when system demands >800 Mbps/pin throughput and SoC supports LPDDR2-1066 timing compliance |
| K4P2G324EC-AC3 | 2Gb LPDDR2-800, 1.2V, 136-ball VFBGA (8×12.5mm), identical pinout and timing, Samsung second-source | No functional or timing deviation; fully interchangeable in existing designs with same JEDEC LPDDR2-S4B compliance | Preferred for supply chain diversification without design change or requalification |
Compared with MT42L256M16RE-107 IT:D and K4P2G324EC-AC3, W97BH2MBVA2I TR offers balanced LPDDR2-800 performance with industrial temperature support and Winbond's ZQ calibration implementation-making it optimal for cost-sensitive, thermally constrained mobile and embedded systems where 800 Mbps/pin suffices.
Availability
W97BH2MBVA2I TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet application memory, automotive infotainment platforms, and industrial HMI displays requiring stable component supply, long-lifecycle availability, and JEDEC-compliant LPDDR2 integration.
Supply support for W97BH2MBVA2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, PSRAM, and low-power DRAM for mobile, automotive, and industrial markets.
W97BH2MBVA2I TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for space-constrained, battery-powered devices requiring JEDEC-standard mobile memory with industrial temperature resilience and advanced power management.
FAQ
What is the maximum data rate supported by the W97BH2MBVA2I TR?
The W97BH2MBVA2I TR supports a maximum data rate of 800 Mbps per pin, corresponding to an LPDDR2-800 speed grade with a 400 MHz differential clock input. This is confirmed in the device's AC timing specifications (tCK = 2.5 ns) and electrical characterization section, where all high-speed timing parameters-including tDQSCK, tRCD, and tRP-are specified at this rate under 1.2 V and industrial temperature conditions.
Does the W97BH2MBVA2I TR support partial array self-refresh (PASR)?
Yes, the W97BH2MBVA2I TR supports PASR via MR16 (bank mask) and MR17 (segment mask) mode registers, allowing selective self-refresh of active memory regions only. This feature reduces typical self-refresh current by up to 75% compared to full-array refresh, as verified in the "Partial Array Self-Refresh" subsection (Section 7.4.18–7.4.19) of the official datasheet.
What package type and dimensions does the W97BH2MBVA2I TR use?
The W97BH2MBVA2I TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.5 mm ball pitch. This is explicitly defined in Section 4 ("Ball Assignment") and Section 5 ("Ball Configuration") of the datasheet, and matches the mechanical drawing referenced in the order information table.
Is ZQ calibration required for proper operation of the W97BH2MBVA2I TR?
Yes, ZQ calibration is required to configure output driver impedance (RONPU/RONPD) for signal integrity. The W97BH2MBVA2I TR mandates connection of a 240 Ω ±1% external reference resistor to the ZQ pin, and supports ZQ initialization, short/long calibration, and reset sequences per Section 7.4.24. Omitting ZQ calibration results in undefined drive strength and potential timing violations.
What is the operating temperature range for the W97BH2MBVA2I TR?
The W97BH2MBVA2I TR is rated for industrial temperature operation from –40°C to +85°C, as stated in Section 8.2.3 ("Operating Temperature Conditions") and confirmed in the ordering information table where the "I" suffix denotes industrial grade. This range is validated across all AC/DC specifications including tRCD, tRP, and IDD parameters.
W97BH2MBVA2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 64M x 32
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH2MBVA2I TR FAQ
1.How can I place an order for W97BH2MBVA2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH2MBVA2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH2MBVA2I TR reliable?
The price and inventory of W97BH2MBVA2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH2MBVA2I TR is usually 5 days.
3.What payment methods are accepted for W97BH2MBVA2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH2MBVA2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH2MBVA2I TR?
W97BH2MBVA2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH2MBVA2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH2MBVA2I TR?
For technical support, including W97BH2MBVA2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH2MBVA2I TR requirements.
6.How does Aetrix verify that W97BH2MBVA2I TR is sourced from the original manufacturer or authorized distributors?
All W97BH2MBVA2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH2MBVA2I TR meets industry standards.
7.What is the process for return or replacement of W97BH2MBVA2I TR?
All W97BH2MBVA2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97BH2MBVA2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH2MBVA2I TR part is unused and in its original packaging.
Return procedure for W97BH2MBVA2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH2MBVA2I TR Tags
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