Winbond Electronics Corporation W97BH2MBVA2J

Overview

W97BH2MBVA2J from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1066 Mbps data rate (533 MHz clock), supporting 16-bit bus width, 1.2V core/VDDQ supply, and dual-bank architecture for low-power mobile applications including smartphones and tablets.

For engineers reviewing the W97BH2MBVA2J datasheet, W97BH2MBVA2J pinout, W97BH2MBVA2J application, or W97BH2MBVA2J equivalent, this page delivers verified LPDDR2 timing parameters, ball assignment mapping, mode register configuration, power-down behavior, and ZQ calibration support essential for memory subsystem design and layout validation.

Technical Context

This device implements LPDDR2 JEDEC JESD209-2 standard with dual 16-bit I/O channels, supports burst lengths of 4/8, read latency (RL) of 3/5, write latency (WL) of 1, and tRCD/tRP/tRRD = 3/3/2 cycles. It features on-die termination (ODT), partial array self-refresh (PASR), temperature sensor, and MR10-based DQ calibration.

Command decoding uses CA[12:0] address/command bus with differential CK_t/CK_c and DQS_t/DQS_c strobes; supports auto-precharge, seamless burst, burst terminate, and deep power-down modes with tFAW = 40 ns and tCCD = 2 cycles. Initialization requires MRW to MR63 reset followed by ZQ calibration via MR24.

Key Specifications

Pinout & Package

W97BH2MBVA2J is housed in a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 10.5 mm × 12.5 mm × 0.8 mm (ball pitch: 0.5 mm), RoHS-compliant and Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L256M16CM-107 and K4P2G324EC-BCF7, W97BH2MBVA2J offers integrated temperature sensing and MR10-based DQ calibration-enabling tighter timing closure and adaptive refresh without host-side compensation logic.

Availability

W97BH2MBVA2J is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet application processors, and automotive infotainment systems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2 interoperability.

Supply support for W97BH2MBVA2J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and mobile DRAM products for consumer, industrial, and automotive markets.

The W97BH series targets mobile and embedded platforms needing low-voltage, low-power DDR2 memory with advanced power management-designed specifically for space-constrained, thermally sensitive applications where JEDEC LPDDR2 compliance and robust initialization are mandatory.

FAQ

What is the ball count and package type of W97BH2MBVA2J?

W97BH2MBVA2J uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm ball pitch, measuring 10.5 mm × 12.5 mm × 0.8 mm. This package is optimized for high-density mobile PCB layouts and complies with JEDEC MO-270DA standards. The ball assignment includes dedicated VDD/VDDQ, VSS/VSSQ, differential clock/strobe pairs, and multiplexed CA/DQ buses-all verified in the official Winbond datasheet revision A01-002.

Does W97BH2MBVA2J support ZQ calibration, and what external component is required?

Yes, W97BH2MBVA2J supports ZQ calibration via MR24 command to tune internal ODT and output driver resistance. It requires an external 240Ω ±1% precision resistor (RZQ) connected between ZQ pin and VSS, with ≤0.5 pF capacitive loading. This calibration ensures impedance matching across voltage and temperature variations, directly impacting signal integrity for 1066 Mbps operation.

What are the supported read and write latencies for W97BH2MBVA2J?

W97BH2MBVA2J supports read latency (RL) of 3 or 5 clock cycles and write latency (WL) of 1 cycle, configurable via mode registers MR0 and MR1. RL = 3 is used for 533 MHz operation with tDQSCKmin = –0.25tCK and tDQSCKmax = +0.5tCK, enabling tight timing margins in mobile SoC interfaces. WL = 1 minimizes write turnaround delay for burst-intensive workloads.

How does W97BH2MBVA2J implement power savings in standby mode?

W97BH2MBVA2J offers three low-power states: Power-Down (IDD2P < 30 µA), Deep Power-Down (IDD6 < 10 µA), and Self-Refresh (IDD3N < 35 µA at 85°C). Deep Power-Down retains mode register contents and exits in ≤500 µs, while Partial Array Self-Refresh (PASR) via MR16/MR17 reduces current by disabling unused banks/segments-critical for extending battery life in always-on mobile devices.

Is W97BH2MBVA2J compatible with standard LPDDR2 controllers?

Yes, W97BH2MBVA2J fully complies with JEDEC JESD209-2 LPDDR2 specification and is interoperable with standard LPDDR2 controllers from MediaTek, Qualcomm, and NXP i.MX series. It supports all mandatory commands-including activate, read/write, precharge, refresh, MRR/MRW-and optional features like PASR, temperature sensor, and ZQ calibration, provided controller firmware initializes MR registers per Winbond's A01-002 sequence.