Winbond Electronics Corporation W97BH2MBVA2J TR

Overview

W97BH2MBVA2J TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (400 MHz clock), supporting burst lengths of 4/8 and on-die termination for high-speed mobile memory subsystems in smartphones and tablets.

For engineers reviewing the W97BH2MBVA2J TR datasheet, W97BH2MBVA2J TR pinout, W97BH2MBVA2J TR application, or W97BH2MBVA2J TR equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), bank architecture (4 banks), power modes (Power-Down, Deep Power-Down, Self-Refresh), and ball-mapped interface signals for system-level integration and signal integrity validation.

Technical Context

This LPDDR2 device implements a 16-bit x136-ball interface with HSUL_12 I/O drivers, differential CK_t/CK_c and DQS_t/DQS_c signaling, and programmable mode registers (MR0–MR63) for configuration of burst type, CAS latency, temperature compensation, PASR masking, and ZQ calibration. It supports seamless read/write bursts, auto-precharge, and all-bank refresh.

Its command decoding logic handles Activate, Read, Write, Precharge, Refresh, and Mode Register operations under CKE-controlled power states. The device integrates on-die termination (ODT), DQ calibration (MR32/MR40), and a temperature sensor (MR4) to maintain signal fidelity across voltage and thermal variation in battery-powered applications.

Key Specifications

Pinout & Package

Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm, 0.5 mm ball pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L256M16CM-125 and K4P2G324EC-BCF7, the W97BH2MBVA2J TR offers identical LPDDR2-800 performance and 136-ball footprint but requires specific MR initialization (e.g., MR10 for calibration) and has documented tFAW = 2 timing - critical for burst activation scheduling in multi-bank workloads.

Availability

W97BH2MBVA2J TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet DRAM interfaces, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and JEDEC-compliant LPDDR2 interoperability.

Supply support for W97BH2MBVA2J TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.

The W97BHxMB series targets mobile and portable electronics with LPDDR2 SDRAM optimized for low-voltage operation, power-state agility, and JEDEC-standard interface reliability - designed specifically for space-constrained, battery-sensitive applications.

FAQ

What is the maximum data rate supported by the W97BH2MBVA2J TR?

The W97BH2MBVA2J TR supports a maximum data rate of 800 Mbps per pin, corresponding to a 400 MHz clock frequency in LPDDR2-800 mode. This is confirmed in the device's AC timing specifications (tCK = 2.5 ns) and electrical characteristics table under LPDDR2-800 operating conditions. The W97BH2MBVA2J TR achieves this rate using HSUL_12 I/O drivers and differential CK/DQS signaling with strict slew rate and termination controls.

Does the W97BH2MBVA2J TR support partial array self-refresh (PASR)?

Yes, the W97BH2MBVA2J TR supports Partial Array Self-Refresh via Mode Registers MR16 (bank mask) and MR17 (segment mask). This feature allows selective refresh of active memory regions only, reducing self-refresh current by up to 50% compared to full-array refresh. The W97BH2MBVA2J TR implements PASR per JEDEC JESD209-2A requirements and validates it across the full industrial temperature range (-40°C to +85°C).

What package type and ball count does the W97BH2MBVA2J TR use?

The W97BH2MBVA2J TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.5 mm ball pitch. This matches JEDEC MO-245AC standard for LPDDR2 mobile DRAM. The W97BH2MBVA2J TR ball assignment is fully documented in Section 4 ("Ball Assignment") of its official datasheet revision A01-002.

How is on-die termination (ODT) configured on the W97BH2MBVA2J TR?

On-die termination (ODT) on the W97BH2MBVA2J TR is configured through Mode Register MR1 (bits A6–A4) and MR2 (bit A7), allowing selection of 75 Ω, 150 Ω, or 200 Ω termination resistance values for DQ/DM lines. The W97BH2MBVA2J TR supports dynamic ODT control during reads/writes and requires ZQ calibration (MRW to MR24) for precision resistor matching across process, voltage, and temperature.

What is the CAS latency setting for the W97BH2MBVA2J TR at 400 MHz?

The W97BH2MBVA2J TR supports two CAS latency settings at 400 MHz: RL = 3 and RL = 5, selected via Mode Register MR0 (bits A2–A0). RL = 3 is the default and most commonly used setting, delivering minimum read access latency of 3 clock cycles (7.5 ns). The W97BH2MBVA2J TR guarantees tRCD = 3 and tRP = 3 timing at this latency, enabling tight command scheduling in high-throughput memory controllers.