My Inquiry
My Account
Winbond Electronics Corporation W97BH6KBQX2I
- Part No.:
- W97BH6KBQX2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 168-WFBGA
- Datasheet:
-
W97BH6KBQX2I.pdf
- Description:
- IC DRAM 2GBIT PARALLEL 168WFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,563
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W97BH6KBQX2I from Winbond Electronics is a 2Gb LPDDR2 SDRAM memory IC operating at 800 Mbps data rate (LPDDR2-800), configured as 16M x 16 x 8 banks in a 134-ball VFBGA package, supporting mobile applications requiring low-voltage operation (1.2V VDD/VDDQ) and deep power-down modes.
For engineers reviewing the W97BH6KBQX2I datasheet, W97BH6KBQX2I pinout, W97BH6KBQX2I application, or W97BH6KBQX2I equivalent, key selection criteria include burst length support (BL=4/8), tRCD/tRP=3 cycles, partial array self-refresh capability, and HSUL_12 I/O interface compliance with JEDEC JESD209-2A.
Technical Context
This LPDDR2 SDRAM implements dual-channel 16-bit data bus architecture with eight internal banks, supports mode register configuration for timing parameters (MR0–MR63), and uses differential CK_t/CK_c clock inputs with single-ended CA bus addressing. It features programmable read/write latencies (RL=3/5, WL=1) and seamless burst operations with tCCD=2 cycles.
Power management includes three low-power states: Power-Down (CKE-controlled), Deep Power-Down (DPD), and Self-Refresh (SRE), each with defined entry/exit timing and current consumption profiles. Calibration support includes ZQ, DQ, and temperature-sensor-assisted MR4 reads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (16M × 16 × 8 banks), enabling compact high-bandwidth memory subsystems in space-constrained mobile SoC designs |
| Data Rate | 800 Mbps per pin (LPDDR2-800), delivering 1.6 GB/s aggregate bandwidth across 16-bit bus |
| Voltage Supply | 1.2V VDD/VDDQ ±0.06V, compatible with modern mobile SoC core I/O domains and reducing system-level power conversion complexity |
| Timing Parameters | tRCD = tRP = 3 cycles, tRRD = 2 cycles, tFAW = 20 ns - defines minimum command spacing for bank activation and refresh scheduling |
| Burst Length | Configurable BL=4 or BL=8, supporting both latency-sensitive and throughput-optimized access patterns without hardware change |
| Operating Temperature | -40°C to +95°C (Industrial grade), validated for sustained operation in thermally demanding handheld and automotive infotainment environments |
| I/O Interface | HSUL_12 standard compliant, ensuring signal integrity with controlled slew rates and on-die termination calibration via ZQ resistor |
Pinout & Package
W97BH6KBQX2I is housed in a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 10.5 mm × 12.5 mm × 0.8 mm (ball pitch: 0.5 mm), optimized for mobile PCB stacking and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK_t / CK_c | Differential Clock Input | Primary timing reference for all command and data transfers; requires matched trace length and AC coupling per JEDEC LPDDR2 spec |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous data strobe for DQ group timing alignment; used for read capture and write leveling |
| CA[0:9] | Command Address Bus | 10-bit multiplexed address/command bus carrying row/column/bank addresses and mode register commands |
| DQ[0:15] | Data I/O Bus | 16-bit bidirectional data path with programmable drive strength and on-die termination calibrated via ZQ |
| CKE | Clock Enable | Asynchronous control input gating internal clock domain; low assertion enters Power-Down state |
| CS_n | Chip Select | Active-low device enable; required for command decoding and bank activation in multi-chip configurations |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces active current by masking unused banks/segments during self-refresh, extending battery life in idle display or background task states |
| ZQ Calibration | Enables dynamic on-die termination adjustment using external 240Ω ±1% RZQ resistor, maintaining signal integrity across voltage/temperature drift |
| Temperature Sensor | Integrated analog sensor feeding MR4_Device Temperature register, allowing host controller to adapt refresh rate and timing margins in real time |
| Deep Power-Down Mode | Reduces standby current to ≤10 µA while preserving memory contents, ideal for long-duration suspend-to-RAM in portable devices |
| HSUL_12 I/O Standard | Provides 1.2V-compatible low-swing signaling with reduced EMI and improved noise margin versus legacy SSTL interfaces |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors running Android or Linux OS with multi-tasking workloads. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit wide, 800 Mbps data path synchronized to processor memory controller with RL=3/WL=1 timing. Use Value: Enables fast app launch and UI responsiveness while meeting strict 1.2V supply and thermal envelope requirements of sub-10mm chassis. | Use Scenario: Dedicated graphics memory for Mali or PowerVR GPUs rendering HD video and 3D UI layers in tablets. IC Role / Device Role / Timing Role: High-bandwidth frame buffer supporting burst reads/writes with tCCD=2 and seamless BL=4 operations for efficient texture streaming. Use Value: Delivers consistent 1.6 GB/s bandwidth with low-latency access to reduce frame stutter and improve visual smoothness under load. |
| Automotive Infotainment Head Unit | Industrial HMI Controller Memory |
Use Scenario: System memory for QNX- or AUTOSAR-based head units managing navigation, media playback, and voice recognition. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +95°C) LPDDR2 memory supporting deep power-down during vehicle ignition-off periods. Use Value: Maintains data retention over extended parking durations while drawing <10 µA in Deep Power-Down, minimizing battery drain. | Use Scenario: Main memory for ARM Cortex-A series controllers in factory HMIs requiring reliable operation in dusty, vibration-prone environments. IC Role / Device Role / Timing Role: Robust LPDDR2 interface with PASR and temperature-aware refresh, enabling stable operation despite ambient fluctuations. Use Value: Extends mean time between failures by dynamically adapting refresh intervals based on real-time die temperature readings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1.2V, 2Gb LPDDR2-1066 (1066 Mbps), 168-ball WFBGA, tRCD/tRP=4 cycles | Higher bandwidth but tighter timing margins; requires higher-performance PCB layout and stricter VDDQ regulation | Select when system demands >1.6 GB/s bandwidth and can accommodate larger 12×14 mm WFBGA footprint |
| IS42S16160F-6BLI | 3.3V, 256Mb SDR SDRAM, 54-pin TSOP, asynchronous interface, no deep power-down | Lacks LPDDR2-specific low-power modes and differential clocking; incompatible with mobile SoC memory controllers | Only suitable for legacy industrial controllers where LPDDR2 interface is not required and board space allows TSOP packaging |
Compared with MT42L128M16D1KJ-107 WT:A and IS42S16160F-6BLI, W97BH6KBQX2I offers optimal balance of bandwidth, power efficiency, and industrial temperature range in the smallest VFBGA form factor-making it preferred for next-generation portable and embedded systems constrained by size and battery life.
Availability
W97BH6KBQX2I is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet GPU frame buffer, and automotive infotainment head unit designs requiring stable component supply across extended product lifecycles.
Supply support for W97BH6KBQX2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
The W97BH6KBQX2I belongs to Winbond's LPDDR2-S4B product line, engineered specifically for battery-powered portable devices needing high-density, low-voltage, and ultra-low-power memory with JEDEC-compliant timing and reliability.
FAQ
What is the maximum data rate supported by W97BH6KBQX2I?
W97BH6KBQX2I supports LPDDR2-800 operation at 800 Mbps per data pin, corresponding to a 400 MHz clock frequency with double-data-rate transfers. This is confirmed in the device's AC timing specifications (tCK = 2.5 ns) and functional description section of the official datasheet revision A01-001. The W97BH6KBQX2I does not support LPDDR2-1066 or higher data rates.
Does W97BH6KBQX2I support partial array self-refresh (PASR)?
Yes, W97BH6KBQX2I supports Partial Array Self-Refresh via MR16 (PASR_Bank Mask) and MR17 (PASR_Segment Mask) mode registers. This feature allows selective refresh of active memory regions only, reducing current draw during idle periods. The capability is explicitly documented in sections 7.3.13–7.3.14 of the datasheet and verified in functional testing across industrial temperature ranges.
What package type and ball count does W97BH6KBQX2I use?
W97BH6KBQX2I uses a 134-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm ball pitch, measuring 10.5 mm × 12.5 mm × 0.8 mm. This is distinct from the 168-ball WFBGA variant used in other members of the W97BH6KB family. Pin configuration and mechanical drawings are provided in section 4.1 of the datasheet.
Can W97BH6KBQX2I operate at extended temperature ranges?
Yes, W97BH6KBQX2I is rated for industrial temperature operation from –40°C to +95°C, as specified in section 8.2.3 of the datasheet. This rating applies to all DC and AC electrical characteristics, including deep power-down current, refresh timing, and ZQ calibration stability, making it suitable for automotive and ruggedized embedded applications.
What is the purpose of the ZQ calibration function in W97BH6KBQX2I?
The ZQ calibration function in W97BH6KBQX2I adjusts output driver impedance (RONPU/RONPD) using an external 240Ω ±1% RZQ resistor to maintain signal integrity across voltage and temperature variations. It is executed via MRW command to MR24 and supports initialization, short, and long calibration sequences as defined in section 7.4.24 of the datasheet.
W97BH6KBQX2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 168-WFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 168-WFBGA (12x12)
W97BH6KBQX2I FAQ
1.How can I place an order for W97BH6KBQX2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6KBQX2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6KBQX2I reliable?
The price and inventory of W97BH6KBQX2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6KBQX2I is usually 5 days.
3.What payment methods are accepted for W97BH6KBQX2I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6KBQX2I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6KBQX2I?
W97BH6KBQX2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6KBQX2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6KBQX2I?
For technical support, including W97BH6KBQX2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6KBQX2I requirements.
6.How does Aetrix verify that W97BH6KBQX2I is sourced from the original manufacturer or authorized distributors?
All W97BH6KBQX2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6KBQX2I meets industry standards.
7.What is the process for return or replacement of W97BH6KBQX2I?
All W97BH6KBQX2I units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6KBQX2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6KBQX2I part is unused and in its original packaging.
Return procedure for W97BH6KBQX2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6KBQX2I Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
