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Winbond Electronics Corporation W97BH6MBVA1E
- Part No.:
- W97BH6MBVA1E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH6MBVA1E.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,322
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Product details
Overview
W97BH6MBVA1E from Winbond Electronics is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1066 Mbps data rate with 1.2V core and I/O supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 for use in smartphone application processors and embedded multimedia SoCs.
For engineers reviewing the W97BH6MBVA1E datasheet, W97BH6MBVA1E pinout, W97BH6MBVA1E application, or W97BH6MBVA1E equivalent, key selection criteria include LPDDR2-1066 timing compliance, VFBGA-136 mechanical compatibility, partial array self-refresh (PASR) support, ZQ calibration capability, and MR10-based DQ calibration sequence.
Technical Context
This device implements JEDEC-standard LPDDR2-S4B interface with dual-channel 16-bit data bus (x16 organization), supports both single-ended CA/CS_n signaling and differential CK/DQS pairs, and uses mode register programming (MR0–MR63) to configure burst type, temperature compensation, PASR masking, and calibration patterns.
It features HSUL_12 I/O drivers with on-die termination calibrated via external 240Ω ZQ resistor, supports seamless burst reads/writes with tCCD = 2, and enables deep power-down (DPD) and partial array self-refresh to reduce system-level standby power in battery-constrained mobile platforms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M x 8, x16 configurable) |
| Data Rate | 1066 Mbps (LPDDR2-1066, tCK = 0.938 ns) |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V - defines logic threshold and driver strength |
| Burst Length | BL = 4 or 8 - determines minimum read/write transaction size |
| CAS Latency | CL = 3 or 5 - sets minimum clock cycles between READ command and first valid DQ |
| tRCD / tRP | 3 × tCK - defines minimum delay between ACTIVATE–READ/WRITE and PRECHARGE–ACTIVATE |
| ZQ Calibration | Supports MRW-based ZQINIT, ZQSHORT, ZQLONG - enables dynamic RON tuning for signal integrity |
Pinout & Package
W97BH6MBVA1E is housed in a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 12.0 mm × 10.0 mm × 0.8 mm with 0.5 mm ball pitch, compliant with JEDEC MO-270CA standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column/bank address during ACTIVATE, READ, WRITE, PRECHARGE |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK_t / CK_c | Differential Clock | Edge-triggered system timing reference; CK_t rising edge initiates commands |
| DQS_t / DQS_c | Differential Strobe | Source-synchronous read/write data capture; toggles with DQ during transfers |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus using HSUL_12 drivers with programmable ODT |
| DM0–DM1 | Data Mask | Byte-level write masking for DQ[7:0] and DQ[15:8] during burst writes |
| CKE | Clock Enable | Controls entry/exit from power-down, self-refresh, and deep power-down modes |
| CS_n | Chip Select | Active-low command enable; low during all valid command cycles |
| CA0–CA5 | Command Address | Carries command opcode (ACT, READ, WRITE, etc.) and mode register address |
| VREF | Reference Voltage | 0.6V ±1% input threshold reference for CA/CS_n; generated internally or supplied externally |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Configurable bank/segment masking via MR16/MR17 reduces refresh current by up to 75% in idle memory regions |
| HSUL_12 I/O Interface | Low-voltage swing (0.4V) differential signaling with on-die termination minimizes EMI and improves noise margin at 1066 Mbps |
| ZQ Calibration Support | Three calibration modes (ZQINIT, ZQSHORT, ZQLONG) dynamically adjust output driver resistance to maintain impedance matching across voltage/temperature |
| Temperature Sensor Integration | On-die thermal sensor feeds MR4 register to enable adaptive refresh rate scaling in high-temp environments |
| Deep Power-Down Mode | Reduces IDD6 current to ≤10 µA while retaining memory contents, enabling rapid wake-up (<100 µs) from ultra-low-power states |
Applications
| Smartphone Application Processor Memory | Automotive Infotainment DRAM |
|---|---|
Use Scenario: Main memory for ARM Cortex-A7x/A5x-based application processors in Android smartphones requiring LPDDR2-1066 bandwidth and low standby power. IC Role / Device Role / Timing Role: x16 LPDDR2 SDRAM providing 16-bit wide data path synchronized to 533 MHz differential clock (CK_t/CK_c). Use Value: Enables burst reads at CL=3 with tRCD=3 for sub-15 ns latency access to GPU and CPU caches while maintaining <150 mW active power. | Use Scenario: System memory for QNX- or Linux-based head-unit SoCs in automotive infotainment systems operating across -40°C to +105°C ambient range. IC Role / Device Role / Timing Role: Temperature-compensated LPDDR2 memory with MR4-based thermal monitoring and PASR for selective bank refresh during display rendering idle periods. Use Value: Reduces average refresh current by 42% at 85°C versus full-array refresh, extending thermal headroom in sealed dashboard enclosures. |
| Industrial Tablet Graphics Buffer | Medical Imaging Data Cache |
Use Scenario: Frame buffer memory for Mali-T860 GPU in ruggedized industrial tablets used in factory floor HMI applications. IC Role / Device Role / Timing Role: High-reliability LPDDR2 with ZQ calibration and seamless burst reads (tCCD=2) to sustain 60 fps video overlay rendering without frame tearing. Use Value: Maintains signal integrity over 8-layer PCB traces up to 85 mm length via HSUL_12 slew rate control and programmable ODT settings. | Use Scenario: Real-time DICOM image preprocessing cache in portable ultrasound devices requiring deterministic memory access and low power consumption. IC Role / Device Role / Timing Role: Deep power-down capable LPDDR2 supporting rapid acquisition-to-display pipeline with <100 µs wake-up from DPDD mode. Use Value: Achieves 92% reduction in standby current versus normal self-refresh, extending battery life to >8 hours per charge in handheld diagnostic units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 IT | 1.2V LPDDR2-1066, 2Gb x16, 136-ball VFBGA, but uses different MR register map and lacks MR17 segment masking | Requires modified initialization firmware due to distinct mode register layout and no MR17 PASR segment control | Preferred when existing design already uses Micron LPDDR2 stack and ZQ calibration tolerance is ≥±5% |
| IS42S16160F-107BLI | 1.2V LPDDR2-1066, 2Gb x16, 136-ball VFBGA, supports identical MR0–MR63 addressing but omits temperature sensor (no MR4 reporting) | No thermal-aware refresh adaptation; requires fixed tRFC values across full temperature range | Selected where cost sensitivity outweighs thermal management needs and board layout allows same footprint |
Compared with W97BH6MBVA1E, MT42L128M16D1KJ-107 IT offers tighter tDQSCK skew control but lacks MR17 segment-level PASR, while IS42S16160F-107BLI provides identical timing and pinout yet omits on-die temperature sensing-making W97BH6MBVA1E optimal for thermally adaptive mobile SoC designs.
Availability
W97BH6MBVA1E is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment DRAM, and industrial tablet graphics buffer applications requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2-1066 performance.
Supply support for W97BH6MBVA1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
The W97BH series targets mobile and embedded systems requiring JEDEC LPDDR2 compliance, low-voltage operation, and advanced power management features such as deep power-down and partial array self-refresh.
FAQ
What is the ball count and package type of W97BH6MBVA1E?
W97BH6MBVA1E uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package conforming to JEDEC MO-270CA, with dimensions of 12.0 mm × 10.0 mm × 0.8 mm and 0.5 mm ball pitch. This package is optimized for high-density mobile PCB layouts and supports automated reflow assembly with standard lead-free processes. The W97BH6MBVA1E pinout includes dedicated differential clock (CK_t/CK_c), strobe (DQS_t/DQS_c), and 16-bit data (DQ0–DQ15) terminals.
Does W97BH6MBVA1E support ZQ calibration, and how is it implemented?
Yes, W97BH6MBVA1E supports ZQ calibration through three defined modes: ZQINIT (full calibration at power-up), ZQSHORT (fast recalibration), and ZQLONG (high-accuracy recalibration). It requires an external 240Ω ±1% ZQ resistor connected to the ZQ pin. Calibration adjusts RONPU and RONPD driver resistances to maintain impedance match across voltage and temperature variations, directly improving signal integrity for W97BH6MBVA1E's HSUL_12 I/O interface at 1066 Mbps.
What is the maximum data rate and corresponding clock frequency for W97BH6MBVA1E?
W97BH6MBVA1E operates at a maximum data rate of 1066 Mbps per pin, corresponding to a differential clock frequency of 533 MHz (tCK = 0.938 ns). This is specified under LPDDR2-1066 conditions with VDD/VDDQ = 1.2V ±0.06V and operating temperature range of –25°C to +85°C. The W97BH6MBVA1E timing parameters-including tRCD, tRP, and tFAW-are defined relative to this clock period and must be met for reliable burst read/write operations.
How does W97BH6MBVA1E implement partial array self-refresh (PASR)?
W97BH6MBVA1E implements PASR via two dedicated mode registers: MR16 (PASR_Bank Mask) and MR17 (PASR_Segment Mask). These allow software to selectively disable refresh in unused banks or segments, reducing refresh current by up to 75% compared to full-array self-refresh. This feature is critical for W97BH6MBVA1E deployments in battery-powered devices where dynamic power optimization is required without compromising data retention integrity.
Is W97BH6MBVA1E compatible with LPDDR2-S4B interface specifications?
Yes, W97BH6MBVA1E fully complies with JEDEC LPDDR2-S4B specification (JESD209-2), supporting all mandatory commands, timing parameters, electrical characteristics, and mode register definitions required for S4B-class mobile SDRAM. Its ball assignment, command encoding (CA0–CA5), and differential signaling architecture align precisely with LPDDR2-S4B requirements-ensuring interoperability with certified LPDDR2 controllers in W97BH6MBVA1E-based designs.
W97BH6MBVA1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH6MBVA1E FAQ
1.How can I place an order for W97BH6MBVA1E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6MBVA1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6MBVA1E reliable?
The price and inventory of W97BH6MBVA1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA1E is usually 5 days.
3.What payment methods are accepted for W97BH6MBVA1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6MBVA1E?
W97BH6MBVA1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6MBVA1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6MBVA1E?
For technical support, including W97BH6MBVA1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA1E requirements.
6.How does Aetrix verify that W97BH6MBVA1E is sourced from the original manufacturer or authorized distributors?
All W97BH6MBVA1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA1E meets industry standards.
7.What is the process for return or replacement of W97BH6MBVA1E?
All W97BH6MBVA1E units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6MBVA1E part is unused and in its original packaging.
Return procedure for W97BH6MBVA1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6MBVA1E Tags
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M24C02-WMN6TP
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AT21CS01-STUM10-T
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