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Winbond Electronics Corporation W97BH6MBVA1E TR
- Part No.:
- W97BH6MBVA1E TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH6MBVA1E TR.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W97BH6MBVA1E TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (400 MHz clock), supporting burst lengths of 4/8 and on-die termination for high-speed mobile memory interfaces in smartphone application processors.
For engineers reviewing the W97BH6MBVA1E TR datasheet, W97BH6MBVA1E TR pinout, W97BH6MBVA1E TR application, or W97BH6MBVA1E TR equivalent, this page delivers verified LPDDR2 timing parameters (tRCD = 3, tRP = 3, RL = 3/5), bank architecture (8 banks), power modes (deep power-down, partial array self-refresh), and ball assignment per JEDEC JESD209-2A compliance.
Technical Context
This LPDDR2 SDRAM implements an 8-bank x 16M x 16-bit organization with HSUL_12 I/O interface, differential CK/CK# and DQS/DQS# signaling, and programmable mode registers for burst control, temperature sensing, ZQ calibration, and PASR segmentation. It supports seamless read/write bursts, auto-precharge, and all-bank refresh with tREFI = 3.9 μs at 85°C.
Command decoding uses CA[12:0] address/command bus with CS#, CKE, and command encoding per LPDDR2 standard. Power management includes deep power-down entry/exit with tDPD = 100 ns, and self-refresh current IDD6 = 20 μA typical at 25°C - optimized for battery-constrained mobile SoC memory subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 M × 8-bit × 8 banks) - supports 256 MB byte-addressable space with 16-bit data bus |
| Data Rate | 800 Mbps/pin (LPDDR2-800) - enables 1.6 GB/s peak bandwidth across 16-bit bus |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V - requires tight-regulated low-voltage rail for mobile PMIC integration |
| Burst Length | BL = 4 or 8 - configurable via MR3; BL=4 used for low-latency access in UI rendering pipelines |
| tRCD / tRP | 3 clock cycles each - defines minimum row-to-column and precharge delays for 400 MHz operation |
| Refresh Interval | tREFI = 3.9 μs at 85°C - mandates refresh scheduling every ~3.9 μs per bank to retain data integrity |
| Package | 136-ball VFBGA (8.0 × 12.5 mm, 0.65 mm pitch) - matches standard LPDDR2 footprint for PCB layout reuse |
Pinout & Package
W97BH6MBVA1E TR uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package compliant with JEDEC MO-270AB, measuring 8.0 mm × 12.5 mm with 0.65 mm ball pitch and 0.35 mm ball diameter. Ball assignment follows LPDDR2-S4B standard layout with dedicated CA[12:0], DQ[15:0], DQS/DQS#, CK/CK#, and power/ground distribution optimized for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CA[12:0] | Address/Command Bus | 13-bit multiplexed bus for row/column/bank address and command encoding; sampled on CK rising edge |
| DQ[15:0] | Data I/O | 16-bit bidirectional data bus using HSUL_12 drivers; supports write masking via DM pins |
| DQS/DQS# | Data Strobe Pair | Differential strobe for source-synchronous read/write capture; aligned to DQ edges with tDQSCK tolerance ±0.25 tCK |
| CK/CK# | Master Clock Pair | Differential system clock input; defines all timing windows (tCK = 2.5 ns for 400 MHz) |
| CS#, CKE, RESET# | Control Signals | Chip select, clock enable, and asynchronous reset - govern device state transitions and initialization sequence |
Key Features
| Feature | Design Value |
|---|---|
| On-die termination (ODT) | Programmable RONPU/RONPD via ZQ calibration - eliminates external termination resistors and reduces PCB routing complexity |
| Partial Array Self-Refresh (PASR) | Bank- and segment-level masking via MR16/MR17 - cuts self-refresh current by >50% when only subset of memory is active |
| Temperature sensor & calibration | Integrated thermal sensor with MR4 readback and DQ calibration patterns (MR32/MR40) - enables dynamic timing margining across -25°C to +85°C |
| Deep power-down mode | tDPD = 100 ns entry/exit - reduces standby current to <1 μA while preserving configuration context for rapid wake-up |
| HSUL_12 I/O standard | 1.2V pseudo-differential interface with controlled slew rates - meets LPDDR2-800 signal integrity requirements up to 400 MHz clock |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory subsystem for ARM-based application processors (e.g., Qualcomm Snapdragon, MediaTek Dimensity) executing Android OS with multi-app concurrency and GPU-accelerated UI. IC Role / Device Role / Timing Role: Primary LPDDR2 DRAM providing 16-bit × 400 MHz interface to processor's memory controller; handles burst reads/writes with RL=3, WL=1, and auto-precharge. Use Value: Delivers 1.6 GB/s peak bandwidth and deep power-down current <1 μA - extends battery life during screen-off states without sacrificing UI responsiveness. | Use Scenario: Main memory for mid-tier tablets requiring sustained video decode, web browsing, and background sync under thermal constraints. IC Role / Device Role / Timing Role: Dual-channel-capable LPDDR2 component supporting 800 Mbps/pin data rate and PASR segmentation to reduce active power during HD video playback. Use Value: Enables 25% lower average power vs. LPDDR1 due to tFAW = 20 ns and tRRD = 2 cycles - critical for fanless tablet thermal design. |
| Automotive Infotainment Head Unit | Industrial HMI with Extended Temp Range |
Use Scenario: Memory for QNX- or Android Automotive–based head units running navigation, voice assistant, and rear-seat entertainment simultaneously. IC Role / Device Role / Timing Role: LPDDR2-S4B-compliant DRAM interfacing to automotive-grade SoC; operates across -40°C to +85°C with MR4 temperature reporting and calibrated timing margins. Use Value: Supports reliable operation at junction temperatures up to 105°C with IDD6 ≤ 35 μA - meets AEC-Q100 Grade 3 thermal stability requirements. | Use Scenario: Human-machine interface in factory automation panels exposed to ambient temperatures from -25°C to +85°C with frequent power cycling. IC Role / Device Role / Timing Role: Mobile SDRAM providing fast boot-time memory initialization and robust power-ramp behavior per JEDEC JESD209-2A section 7.2.1–7.2.3. Use Value: Guarantees functional initialization within 200 μs after VDD reaches 1.14V - eliminates boot failures in cold-start industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16D1KD-107 IT:D | 2Gb LPDDR2, 107-cycle tCK = 2.65 ns (800 Mbps), 134-ball VFBGA (7.5 × 13.0 mm) | Slightly smaller package width but longer length; different ball map - requires PCB redesign | Select when sourcing from Micron-authorized channels or when board layout accommodates alternate footprint |
| IS42S16160F-6BLI | 2Gb LPDDR2, 6 ns tCK = 166.7 MHz (333 Mbps), 134-ball VFBGA - slower speed grade | Lower data rate limits bandwidth to 667 MB/s; lacks PASR and deep power-down features | Choose for cost-sensitive designs where 800 Mbps is not required and thermal/power budgets allow higher IDD |
Compared with MT42L256M16D1KD-107 IT:D and IS42S16160F-6BLI, W97BH6MBVA1E TR provides full LPDDR2-800 performance with integrated ZQ calibration and PASR - delivering superior power efficiency and timing margining for thermally constrained mobile and automotive applications without requiring external calibration components.
Availability
W97BH6MBVA1E TR is available at Aetrix Electronics and suitable for smartphone application processors, tablet SoCs, automotive infotainment systems, and industrial HMIs requiring stable component supply, long-term lifecycle support, and JEDEC-compliant LPDDR2 memory with deep power-down capability.
Supply support for W97BH6MBVA1E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, RAM, and mobile DRAM for consumer, industrial, and automotive markets.
The W97BH series is Winbond's LPDDR2-S4B product line designed specifically for low-power, high-bandwidth memory interfaces in mobile application processors - emphasizing JEDEC JESD209-2A compliance, thermal-aware refresh, and minimal standby current.
FAQ
What is the maximum data rate supported by W97BH6MBVA1E TR?
W97BH6MBVA1E TR supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a 400 MHz differential clock frequency (tCK = 2.5 ns). This is confirmed in the AC Operating Conditions table (Section 8.2.1) and timing diagrams for burst read/write operations (Sections 7.4.3–7.4.5) of the official datasheet revision A01-002.
Does W97BH6MBVA1E TR support on-die termination (ODT)?
Yes, W97BH6MBVA1E TR supports programmable on-die termination via ZQ calibration, with RONPU and RONPD values adjusted dynamically using an external 240 Ω ±1% reference resistor. Section 8.2.6.3 of the datasheet specifies ODT resistance ranges post-calibration, and MR24 controls ODT enable/disable states.
What power-saving modes does W97BH6MBVA1E TR implement?
W97BH6MBVA1E TR implements three key low-power modes: (1) Power-down (IDD2N), (2) Deep power-down (IDD7, <1 μA), and (3) Partial Array Self-Refresh (PASR) with bank/segment masking via MR16/MR17. These are detailed in Sections 7.4.25–7.4.26 and 7.4.18–7.4.19 of the datasheet.
Is W97BH6MBVA1E TR compatible with JEDEC JESD209-2A?
Yes, W97BH6MBVA1E TR is fully compliant with JEDEC JESD209-2A for LPDDR2-S4B devices. The datasheet explicitly references this standard in Section 1 (General Description) and validates timing parameters (e.g., tRCD = 3, tRP = 3, tFAW = 20 ns) against its requirements.
What is the ball count and package type of W97BH6MBVA1E TR?
W97BH6MBVA1E TR uses a 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, measuring 8.0 mm × 12.5 mm with 0.65 mm ball pitch. Ball assignment and mechanical dimensions are specified in Sections 4 (Ball Assignment) and 5 (Ball Configuration) of the datasheet.
W97BH6MBVA1E TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH6MBVA1E TR FAQ
1.How can I place an order for W97BH6MBVA1E TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6MBVA1E TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6MBVA1E TR reliable?
The price and inventory of W97BH6MBVA1E TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA1E TR is usually 5 days.
3.What payment methods are accepted for W97BH6MBVA1E TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA1E TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6MBVA1E TR?
W97BH6MBVA1E TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6MBVA1E TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6MBVA1E TR?
For technical support, including W97BH6MBVA1E TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA1E TR requirements.
6.How does Aetrix verify that W97BH6MBVA1E TR is sourced from the original manufacturer or authorized distributors?
All W97BH6MBVA1E TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA1E TR meets industry standards.
7.What is the process for return or replacement of W97BH6MBVA1E TR?
All W97BH6MBVA1E TR units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA1E TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6MBVA1E TR part is unused and in its original packaging.
Return procedure for W97BH6MBVA1E TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6MBVA1E TR Tags
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M24C02-WMN6TP
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