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Winbond Electronics Corporation W97BH6MBVA1I

Part No.:
W97BH6MBVA1I
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
134-VFBGA
Datasheet:
AetrixW97BH6MBVA1I.pdf
Description:
IC DRAM 2GBIT HSUL 12 134VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,215

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Product details

Overview

W97BH6MBVA1I from Winbond Electronics is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1066 Mbps data rate (533 MHz clock), with 1.2V core/VDDQ supply, 8-bit prefetch architecture, and support for partial array self-refresh (PASR) and ZQ calibration. It serves as main memory in power-constrained mobile SoC platforms such as LTE smartphones and embedded tablets.

For engineers reviewing the W97BH6MBVA1I datasheet, W97BH6MBVA1I pinout, W97BH6MBVA1I application, or W97BH6MBVA1I equivalent, key selection criteria include LPDDR2-1066 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), HSUL_12 I/O interface, temperature-sensor-enabled thermal management, and VFBGA-136 mechanical compatibility with mobile PCB stack-ups.

Technical Context

This LPDDR2 device implements dual-channel 16-bit × 16M organization (2Gb total), with four internal banks and programmable burst lengths (BL = 4/8). Its command interface uses CA[0:9] address/command bus, CK/CK#, DQS/DQS# differential strobes, and HSUL_12-compatible DQ/DM signals.

Power management includes deep power-down (DPD), auto-precharge, per-bank refresh, and PASR via MR16/MR17 mode registers. Calibration relies on internal ZQ resistor (RZQ = 240 Ω ±1%) and supports DQ timing adjustment through MR32/MR40 patterns.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 Gb (256 M × 8-bit configuration)
Data Rate1066 Mbps (533 MHz clock, RL = 3, WL = 1)
Supply VoltageVDD/VDDQ = 1.2 V ±0.06 V - matches LPDDR2 system rail requirements
Burst LengthProgrammable BL = 4 or 8 - enables flexible bandwidth allocation per access
Refresh ModeAll-bank and per-bank refresh - reduces power during partial active usage
Self-RefreshPartial Array Self-Refresh (PASR) with bank/segment masking - cuts leakage by disabling unused arrays
Temperature SensorOn-die sensor with MR4 register readout - enables dynamic thermal throttling in mobile SoCs

Pinout & Package

W97BH6MBVA1I is housed in a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 10.5 mm × 12.5 mm × 0.8 mm (ball pitch = 0.5 mm), optimized for high-density mobile PCB layouts with strict height constraints.

Pin/TerminalCircuit RoleDesign Meaning
CK_t / CK_cDifferential Clock InputHSUL_12-compliant clock pair; defines all timing windows (tCK = 1.87 ns @ 533 MHz)
DQS_t / DQS_cDifferential StrobeSource-synchronous read/write strobe aligned to DQ edges; supports tDQSCKmin/tDQSCKmax tracking
CA[0:9]Command/Address BusMultiplexed row/column/bank/address and command inputs; sampled on CK rising edge
DQ[0:7]Data I/O8-bit bidirectional data bus with DM support; HSUL_12 drive strength calibrated via ZQ
CKEClock EnableAsynchronous enable controlling entry/exit from power-down and self-refresh states
RESET_nHardware ResetActive-low asynchronous reset initiating initialization sequence without power ramp

Key Features

FeatureDesign Value
ZQ Calibration SupportEnables precise output driver impedance matching (RONPU/RONPD) to external 240 Ω reference resistor, reducing signal integrity margin loss
Partial Array Self-Refresh (PASR)MR16/MR17-controlled bank or segment masking cuts self-refresh current up to 50% vs full-array mode
Deep Power-Down (DPD)Reduces standby current to ≤10 µA while retaining memory state - critical for long-idle mobile use cases
On-Die Temperature SensorProvides real-time junction temperature via MR4 register, enabling closed-loop thermal management in application processors
HSUL_12 I/O InterfaceLow-voltage swing (0.6 V) differential signaling compatible with LPDDR2-1066 timing and mobile SoC PHYs

Applications

Smartphone Baseband MemoryTablet Application Processor Cache

Use Scenario: Main memory for LTE/5G baseband processors requiring low-latency, low-power DRAM access during voice/data bursts.

IC Role / Device Role / Timing Role: LPDDR2-S4B interface provides 1066 Mbps bandwidth with tRCD = 3, tRP = 3, supporting real-time packet buffering and protocol stack execution.

Use Value: Deep power-down and PASR reduce average current consumption by >40% during idle intervals between cellular transmissions.

Use Scenario: Shared system memory for ARM Cortex-A series application processors in Android/iOS tablets.

IC Role / Device Role / Timing Role: 2Gb density and HSUL_12 I/O meet bandwidth and signal integrity needs of GPU-accelerated UI rendering and video decode pipelines.

Use Value: On-die temperature sensor feeds thermal feedback to SoC DVFS controller, preventing throttling during sustained multi-core workloads.

Automotive Infotainment RAMIndustrial HMI Display Buffer

Use Scenario: Memory subsystem for QNX/Linux-based infotainment head units operating across -40°C to +85°C ambient range.

IC Role / Device Role / Timing Role: Industrial-grade temperature rating (I-temp) and robust ZQ calibration ensure stable operation under automotive thermal cycling.

Use Value: Per-bank refresh and auto-precharge minimize latency jitter during concurrent audio/video/telematics processing threads.

Use Scenario: Frame buffer for 720p/1080p industrial HMIs with touch GUIs and real-time PLC communication.

IC Role / Device Role / Timing Role: VFBGA-136 footprint enables compact layout in space-constrained DIN-rail enclosures; supports seamless burst reads (tCCD = 2).

Use Value: Low 0.8 mm profile avoids interference with heatsinks and shields in sealed industrial chassis designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT42L256M16RE-125:E2Gb LPDDR2, 125-ball VFBGA, 1066 Mbps, but requires VDDQ = 1.2V ±0.03V (tighter tolerance than W97BH6MBVA1I's ±0.06V)Designed for Micron-validated SoC reference designs; less flexible for custom voltage regulation schemesSelect when using Micron-qualified power delivery ICs and require JEDEC-compliant MRW timing tables
K4P2G324EC-ACF62Gb LPDDR2, 136-ball VFBGA, same pinout, but supports only tRCD = 4 (vs W97BH6MBVA1I's tRCD = 3) at 1066 MbpsTargeted at Samsung Exynos platforms; lacks on-die temperature sensor and PASR segment maskingChoose for cost-sensitive designs where thermal monitoring and fine-grained refresh control are not required

Compared with MT42L256M16RE-125:E and K4P2G324EC-ACF6, W97BH6MBVA1I offers tighter tRCD = 3 timing, broader VDDQ tolerance, integrated temperature sensing, and granular PASR - making it optimal for thermally adaptive, power-budget-constrained mobile SoCs.

Availability

W97BH6MBVA1I is available at Aetrix Electronics and suitable for smartphone baseband memory, tablet application processor cache, and automotive infotainment RAM requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W97BH6MBVA1I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.

The W97BH series targets LPDDR2 memory applications in battery-powered devices, emphasizing power efficiency, thermal awareness, and JEDEC-compliant interoperability with leading mobile SoCs.

FAQ

What is the maximum data rate supported by the W97BH6MBVA1I?

The W97BH6MBVA1I supports a maximum data rate of 1066 Mbps, achieved at a clock frequency of 533 MHz with read latency (RL) = 3 and write latency (WL) = 1. This performance level complies with JEDEC LPDDR2-1066 specifications and is validated under VDD/VDDQ = 1.2 V ±0.06 V and industrial temperature range (-40°C to +85°C). The W97BH6MBVA1I achieves this speed using HSUL_12 I/O drivers and precise ZQ calibration.

Does the W97BH6MBVA1I include an on-die temperature sensor?

Yes, the W97BH6MBVA1I integrates an on-die temperature sensor accessible via Mode Register MR4 (MA[7:0] = 04H). The sensor provides real-time junction temperature readings used by host SoCs for dynamic thermal management. This feature is confirmed in Section 7.4.21 of the official datasheet and distinguishes W97BH6MBVA1I from many competing LPDDR2 devices lacking embedded thermal monitoring.

What package type and ball count does the W97BH6MBVA1I use?

The W97BH6MBVA1I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with dimensions of 10.5 mm × 12.5 mm × 0.8 mm and 0.5 mm ball pitch. This package is explicitly documented in Section 4 (Ball Assignment) and Section 5 (Ball Configuration) of the Winbond datasheet revision A01-002. The VFBGA-136 footprint ensures compatibility with high-density mobile PCB layouts and automated assembly processes.

How does the W97BH6MBVA1I implement partial array self-refresh (PASR)?

The W97BH6MBVA1I implements PASR using two dedicated mode registers: MR16 (PASR_Bank Mask) and MR17 (PASR_Segment Mask). These registers allow selective disabling of inactive memory banks or segments during self-refresh, reducing current draw by up to 50%. This capability is detailed in Sections 7.3.13–7.3.14 of the datasheet and is enabled only when configured via MRW commands - not automatic.

What is the purpose of ZQ calibration in the W97BH6MBVA1I?

ZQ calibration in the W97BH6MBVA1I adjusts output driver impedance (RONPU/RONPD) to match an external 240 Ω ±1% reference resistor, ensuring consistent signal integrity across voltage and temperature variations. Supported via MRW commands to MR24, ZQ calibration is mandatory before high-speed operation and directly impacts tDQSCK timing margins. This function is specified in Sections 7.4.24 and 8.2.6 of the official datasheet.

W97BH6MBVA1I Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
134-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - Mobile LPDDR2-S4B
Memory Size:
2Gbit
Memory Organization:
128M x 16
Memory Interface:
HSUL_12
Clock Frequency:
533 MHz
Write Cycle Time - Word, Page:
15ns
Access Time:
-
Voltage - Supply:
1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
134-VFBGA (10x11.5)

W97BH6MBVA1I FAQ

1.How can I place an order for W97BH6MBVA1I through Aetrix?

Please submit a Request for Quotation (RFQ) for W97BH6MBVA1I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W97BH6MBVA1I reliable?

The price and inventory of W97BH6MBVA1I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA1I is usually 5 days.

3.What payment methods are accepted for W97BH6MBVA1I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA1I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W97BH6MBVA1I?

W97BH6MBVA1I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W97BH6MBVA1I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W97BH6MBVA1I?

For technical support, including W97BH6MBVA1I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA1I requirements.

6.How does Aetrix verify that W97BH6MBVA1I is sourced from the original manufacturer or authorized distributors?

All W97BH6MBVA1I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA1I meets industry standards.

7.What is the process for return or replacement of W97BH6MBVA1I?

All W97BH6MBVA1I units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA1I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W97BH6MBVA1I part is unused and in its original packaging.

Return procedure for W97BH6MBVA1I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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