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Winbond Electronics Corporation W97BH6MBVA1I TR
- Part No.:
- W97BH6MBVA1I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH6MBVA1I TR.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,068
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Product details
Overview
W97BH6MBVA1I TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.5mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and on-die termination for high-speed mobile SoC memory interfaces in smartphones and tablets.
For engineers reviewing the W97BH6MBVA1I TR datasheet, W97BH6MBVA1I TR pinout, W97BH6MBVA1I TR application, or W97BH6MBVA1I TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), partial array self-refresh (PASR) support, ZQ calibration capability, and industrial temperature range (–40°C to +85°C) operation.
Technical Context
This LPDDR2 SDRAM implements dual-bank architecture with 8K-word deep x 16-bit organization, supporting burst lengths of 4 and 8, programmable read/write latencies (RL/WL), and auto-precharge. It uses HSUL_12 I/O standard with differential CK/CK# and DQS/DQS# signaling, and supports command-based power-down, deep power-down, and self-refresh modes.
Mode register configuration enables dynamic control of features including PASR bank/segment masking (MR16/MR17), temperature-sensor readout (MR4), DQ calibration patterns (MR32/MR40), and ZQ calibration initialization (MRW to MR0x0A). Initialization requires strict tRST minimum (200μs) and power-ramp sequencing per JEDEC JESD209-2A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256 Mword × 16-bit), enabling compact 256MB memory subsystems in space-constrained mobile PCBs. |
| Data Rate | 800 Mbps/pin (LPDDR2-800), supporting 1.6 GB/s peak bandwidth on 16-bit bus for mid-tier application processors. |
| Supply Voltage | VDD/VDDQ = 1.2V ±0.06V, requiring tight-regulated low-noise power delivery for stable high-speed operation. |
| Operating Temp | –40°C to +85°C (Industrial grade), validated for sustained operation in thermally demanding handheld enclosures. |
| Timing (tRCD/tRP) | tRCD = tRP = 3 cycles @ 400 MHz clock, defining minimum row activation-to-read/write and precharge delays. |
| Burst Length | Configurable BL = 4 or 8, allowing optimization between latency (BL4) and throughput (BL8) per memory access. |
| ZQ Calibration | Supports ZQ short/long calibration via MRW to MR0x0A, enabling dynamic output driver impedance tuning to compensate for voltage/temperature drift. |
Pinout & Package
Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm body, 0.5 mm ball pitch, RoHS-compliant, lead-free matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Edge-triggered system clock pair; CK rising edge initiates commands; CK# inverted reference for jitter rejection. |
| DQS / DQS# | Differential Strobe | Source-synchronous read/write strobe pair aligned to DQ edges; used for timing capture in high-speed interfaces. |
| CA[0:9] | Command Address Bus | 10-bit multiplexed address/command bus carrying row/column/bank addresses and mode register commands. |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus using HSUL_12 signaling; supports write data mask (DM) and on-die termination. |
| CKE | Clock Enable | Active-high input controlling entry/exit from power-down and self-refresh; gated with clock for state transitions. |
| CS# | Chip Select | Active-low chip select enabling command decoding; multiple devices supported via shared CA/DQ buses. |
Key Features
| Feature | Design Value |
|---|---|
| LPDDR2-800 Compliance | Fully conforms to JEDEC JESD209-2A spec, ensuring interoperability with certified LPDDR2 controllers (e.g., Qualcomm Snapdragon, MediaTek MT series). |
| Partial Array Self-Refresh (PASR) | Reduces active memory bank count during self-refresh via MR16/MR17, cutting refresh current by up to 50% in background tasks. |
| ZQ Calibration Support | Enables real-time RONPU/RONPD adjustment using external 240Ω ±1% ZQ resistor, maintaining signal integrity across voltage/temperature variation. |
| Temperature Sensor Interface | Read-only MR4 register reports die temperature in 2's complement format, supporting thermal-aware OS power management. |
| Deep Power-Down Mode | Enters ultra-low IDD6 state (<10 μA) with full retention loss; used for extended standby where memory contents need not be preserved. |
Applications
| Smartphone Application Processor Memory | Tablet GPU Frame Buffer |
|---|---|
Use Scenario: Main system memory for ARM-based application processors (e.g., Exynos, Helio) running Android OS with multi-tasking and camera preview buffers. IC Role / Device Role / Timing Role: LPDDR2 SDRAM providing 16-bit × 800 Mbps interface to processor memory controller; handles burst reads/writes with RL=3/WL=1 timing. Use Value: Delivers 1.6 GB/s bandwidth within 1.2V power envelope, enabling smooth UI rendering and app switching while meeting thermal limits. | Use Scenario: Dedicated graphics memory for Mali or PowerVR GPUs in 7–10 inch tablets rendering HD video and UI overlays. IC Role / Device Role / Timing Role: Frame buffer memory accessed via GPU memory controller with burst-length-8 reads for texture streaming and display line buffering. Use Value: PASR support reduces idle power during static screen display, extending battery life without compromising frame rate stability. |
| Automotive Infotainment DRAM | Industrial HMI Controller Memory |
Use Scenario: System memory in automotive head units supporting navigation, voice recognition, and rear-seat entertainment with ASIL-B functional safety alignment. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 memory interfacing to automotive SoCs (e.g., NXP i.MX8QuadMax); operates continuously at 85°C ambient. Use Value: Validated –40°C to +85°C operation and robust ZQ calibration ensure reliable memory access under engine-bay thermal cycling. | Use Scenario: Memory subsystem for ruggedized human-machine interface controllers in factory automation panels with fanless enclosure design. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A7/A9-based controllers executing real-time PLC logic and graphical HMI rendering. Use Value: Deep power-down mode enables <10 μA standby current during panel sleep, meeting stringent energy budgets for 24/7 deployed systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-107 WT:D | 2Gb LPDDR2-1066 (1066 Mbps/pin), 1.2V, 134-ball VFBGA (7.5×13mm); higher speed but tighter timing margins (tRCD = 4). | Requires controller support for LPDDR2-1066; better suited for performance-critical designs needing >2GB/s bandwidth. | Select when higher bandwidth justifies increased layout sensitivity and power consumption. |
| EM6AB160BS-107H | 2Gb LPDDR2-800, 1.2V, 136-ball VFBGA (8×12.5mm); identical timing and package footprint but different manufacturer-specific MR settings. | Drop-in compatible in most layouts; requires validation of MR initialization sequence and ZQ resistor tolerance (240Ω ±0.5% vs. ±1%). | Preferred for second-source assurance where Winbond supply constraints exist; verify MR3/MR5 defaults match system firmware. |
Compared with W97BH6MBVA1I TR, MT42L256M16RE-107 WT:D offers +33% bandwidth but increases power and timing validation complexity, while EM6AB160BS-107H provides mechanical and electrical equivalence with minor firmware adaptation for mode register behavior.
Availability
W97BH6MBVA1I TR is available at Aetrix Electronics and suitable for smartphone memory subsystems, tablet GPU frame buffers, and automotive infotainment systems requiring stable component supply across long production lifecycles.
Supply support for W97BH6MBVA1I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM products for consumer, industrial, and automotive markets.
The W97BH series targets LPDDR2 memory needs in cost-sensitive, thermally constrained mobile platforms, emphasizing industrial temperature reliability, low-power modes, and JEDEC-compliant interoperability with mainstream application processors.
FAQ
What is the maximum data rate supported by the W97BH6MBVA1I TR?
The W97BH6MBVA1I TR supports a maximum data rate of 800 Mbps per pin (LPDDR2-800), corresponding to a 400 MHz clock frequency with double-data-rate transfers. This is confirmed in the AC timing specifications section of the datasheet, where tCK(min) = 2.5 ns defines the fastest supported cycle time. The W97BH6MBVA1I TR does not support LPDDR2-1066 or higher speeds.
Does the W97BH6MBVA1I TR support ZQ calibration, and what external component is required?
Yes, the W97BH6MBVA1I TR supports both ZQ short and long calibration via mode register write to MR0x0A. It requires an external 240Ω ±1% precision resistor connected between ZQ pin and VSS, as specified in section 7.4.24.5 of the datasheet. The W97BH6MBVA1I TR uses this resistor to calibrate output driver impedance (RONPU/RONPD) dynamically across voltage and temperature variations.
What is the operating temperature range for the W97BH6MBVA1I TR?
The W97BH6MBVA1I TR is rated for industrial temperature operation from –40°C to +85°C, as defined in section 8.2.3 of the datasheet. This rating applies to all DC and AC specifications, including timing parameters and power consumption values. The W97BH6MBVA1I TR includes a built-in temperature sensor (accessible via MR4) to support thermal monitoring in this range.
How many banks and what organization does the W97BH6MBVA1I TR use?
The W97BH6MBVA1I TR implements a dual-bank architecture organized as 8,192 rows × 2,048 columns × 16 bits, totaling 2 Gb (256 Mword × 16-bit). This structure is detailed in section 7.3.3.1 and the addressing table (section 5.2). The W97BH6MBVA1I TR uses BA[1:0] to select between two independent banks for concurrent row activation and improved memory bandwidth utilization.
Is the W97BH6MBVA1I TR pin-compatible with other Winbond LPDDR2 devices like W97BH2MBVA1I TR?
No, the W97BH6MBVA1I TR is not pin-compatible with W97BH2MBVA1I TR despite sharing the same 136-ball VFBGA package outline. The W97BH2MBVA1I TR is a 1Gb device with different internal bank organization and distinct ball assignments for certain CA and DQ signals, as shown in the separate ball configuration tables for each density in sections 4 and 5 of the datasheet. Interchangeability requires full schematic and layout verification.
W97BH6MBVA1I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 533 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH6MBVA1I TR FAQ
1.How can I place an order for W97BH6MBVA1I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6MBVA1I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6MBVA1I TR reliable?
The price and inventory of W97BH6MBVA1I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA1I TR is usually 5 days.
3.What payment methods are accepted for W97BH6MBVA1I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA1I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6MBVA1I TR?
W97BH6MBVA1I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6MBVA1I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6MBVA1I TR?
For technical support, including W97BH6MBVA1I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA1I TR requirements.
6.How does Aetrix verify that W97BH6MBVA1I TR is sourced from the original manufacturer or authorized distributors?
All W97BH6MBVA1I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA1I TR meets industry standards.
7.What is the process for return or replacement of W97BH6MBVA1I TR?
All W97BH6MBVA1I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA1I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6MBVA1I TR part is unused and in its original packaging.
Return procedure for W97BH6MBVA1I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6MBVA1I TR Tags
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M24C02-WMN6TP
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