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Winbond Electronics Corporation W97BH6MBVA2E
- Part No.:
- W97BH6MBVA2E
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH6MBVA2E.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,578
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Product details
Overview
W97BH6MBVA2E from Winbond Electronics is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1066 Mbps data rate with 1.2V core/VDDQ supply and 15ns tRCD/tRP timing. It supports burst lengths of 4/8, partial array self-refresh (PASR), and ZQ calibration for impedance matching-deployed in smartphone application processors and tablet SoC memory subsystems.
For engineers reviewing the W97BH6MBVA2E datasheet, W97BH6MBVA2E pinout, W97BH6MBVA2E application, or W97BH6MBVA2E equivalent, key selection criteria include LPDDR2-1066 compliance, 136-ball VFBGA footprint compatibility, PASR bank/segment masking capability, and support for seamless read/write bursts with tCCD = 2 cycles.
Technical Context
This device implements the JEDEC LPDDR2 standard (JESD209-2) with dual-channel 16-bit I/O architecture, supporting both single-ended CA/CS_n signaling and differential CK/DQS pairs. Its mode register set (MR0–MR63) enables runtime configuration of burst type, read/write latency (RL=3/5, WL=1), temperature-sensing, and DQ calibration patterns (MR32/MR40).
Power management includes three low-power states: Power-down (CKE-controlled), Deep Power-down (retains no state), and Self-refresh (all-bank or PASR). Initialization requires strict tRAMP ≥ 200μs, followed by MRW commands to configure MR5–MR8 for basic operation and MR10 for ZQ calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M x 8) organized as four 64M x 8 banks |
| Data Rate | 1066 Mbps (LPDDR2-1066, 533 MHz clock) |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; VREF = 0.6V ± 1% (DC) |
| Timing (tRCD / tRP) | 15 ns minimum (3 clock cycles at 533 MHz) |
| Burst Length | Configurable BL=4 or BL=8; supports non-wrap and seamless modes |
| Refresh Interval | 7.8 μs average refresh cycle (tREFI); supports all-bank and per-bank refresh |
| Operating Temp | Commercial grade: 0°C to +85°C ambient |
Pinout & Package
W97BH6MBVA2E uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) with 0.4 mm ball pitch and 8 mm × 11.5 mm body size. Ball assignment follows JEDEC-standard LPDDR2-S4B layout (16-bit data bus, 14-bit address/command, differential clocks/strobes).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O (bidirectional) | 16-bit wide data bus; HSUL_12 compatible; supports write mask via DM[1:0] |
| CK_t / CK_c | Differential clock input | System timing reference; 533 MHz max frequency; AC-coupled with internal termination |
| DQS_t / DQS_c | Differential strobe (read/write) | Source-synchronous timing for DQ; calibrated via ZQ and MR10 |
| CA0–CA13 | Command/address bus | Multiplexed row/column/bank address and command signals; single-ended, 1.2V logic |
| CS_n | Chip select | Active-low enable for command decoding; sampled on CK rising edge |
| CKE | Clock enable | Controls entry/exit from power-down and self-refresh states |
| RESET_n | Asynchronous reset | Initializes internal state machines and resets mode registers to default values |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces refresh power by masking inactive banks (MR16) or segments (MR17), critical for battery-constrained mobile SoCs |
| ZQ Calibration | On-die impedance tuning using external 240Ω ±1% resistor (RZQ) to maintain signal integrity across voltage/temperature drift |
| Temperature Sensor | Integrated sensor (MR4) enables dynamic thermal throttling and adaptive refresh rate adjustment per JEDEC spec |
| Seamless Burst Mode | Enables back-to-back read/write operations with tCCD = 2 cycles, eliminating pipeline stalls in high-throughput GPU/CPU memory access |
| HSUL_12 I/O Standard | Low-voltage swing (0.6V) differential signaling reduces EMI and crosstalk while maintaining noise margin for 1066 Mbps operation |
Applications
| Smartphone Application Processor Memory | Tablet SoC Main Memory |
|---|---|
Use Scenario: High-bandwidth memory interface between ARM Cortex-A series CPU/GPU and LPDDR2 controller in flagship smartphones. IC Role / Device Role / Timing Role: Primary system memory providing 1066 Mbps sustained bandwidth with low-latency tRCD/tRP for UI responsiveness and camera buffer handling. Use Value: PASR and Deep Power-down reduce active/idle power by up to 40% versus full-array refresh, extending battery life during background app execution. | Use Scenario: Dual-channel memory subsystem in Android-based tablets with integrated multimedia engines. IC Role / Device Role / Timing Role: 2Gb density supports 1GB physical memory mapping; HSUL_12 I/O ensures signal integrity across longer PCB traces typical in larger form factors. Use Value: Seamless burst and tCCD = 2 enable uninterrupted video decode/encode pipelines without memory arbitration bottlenecks. |
| Automotive Infotainment Head Unit | Industrial HMI with Embedded Linux |
Use Scenario: Memory for QNX- or Android Automotive–based head units requiring AEC-Q200–compatible components. IC Role / Device Role / Timing Role: System memory interfacing with automotive-grade SoC; operates within 0°C to +85°C ambient range with validated thermal derating. Use Value: Built-in temperature sensor (MR4) feeds real-time die temperature to host firmware for dynamic refresh rate scaling, meeting ASIL-B functional safety requirements. | Use Scenario: Memory for ARM-based industrial HMIs running Yocto Linux with deterministic GUI rendering and data logging. IC Role / Device Role / Timing Role: Reliable main memory supporting ECC-capable controllers; supports MRW-based runtime calibration for long-term field stability. Use Value: ZQ calibration (MR10) compensates for PCB trace aging and temperature cycling, maintaining timing margins over 10+ year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 IT | 1.2V 2Gb LPDDR2, 1066 Mbps, 134-ball VFBGA (slightly different ball map) | Same JEDEC LPDDR2-1066 compliance but requires PCB layout review for CA/DQ routing alignment | Select when sourcing from Micron-authorized channels; verify MR register mapping matches Winbond's MR0–MR63 implementation |
| K4P2G324EC-BCF7 | 2Gb LPDDR2-1066, 1.2V, 136-ball VFBGA, Samsung-specific MR layout and ZQ behavior | Identical mechanical footprint but divergent initialization sequence (e.g., MR10 ZQ timing differs by ±2 cycles) | Prefer for Samsung SoC platforms; cross-compatibility requires validation of PASR segment mask behavior and tFAW timing |
Compared with W97BH6MBVA2E, MT42L128M16D1KJ-107 IT offers identical electrical specs but demands ball-level routing verification, while K4P2G324EC-BCF7 shares the same package yet requires SoC firmware adaptation for mode register initialization and ZQ calibration flow.
Availability
W97BH6MBVA2E is available at Aetrix Electronics and suitable for smartphone application processor memory, tablet SoC main memory, and automotive infotainment head unit designs requiring stable component supply, long-lifecycle support, and qualified LPDDR2-1066 performance.
Supply support for W97BH6MBVA2E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile and embedded markets.
The W97BH series targets mobile and portable electronics, delivering JEDEC-compliant LPDDR2 memory with optimized power efficiency, thermal resilience, and integration-ready features like PASR and on-die calibration.
FAQ
What is the maximum data rate supported by the W97BH6MBVA2E?
The W97BH6MBVA2E supports a maximum data rate of 1066 Mbps (LPDDR2-1066), corresponding to a 533 MHz clock frequency. This is confirmed in the device's AC timing specifications (tCK = 1.875 ns) and validated across commercial temperature range (0°C to +85°C). The W97BH6MBVA2E achieves this rate using HSUL_12 I/O signaling with differential CK/DQS and calibrated output drivers.
Does the W97BH6MBVA2E support partial array self-refresh (PASR)?
Yes, the W97BH6MBVA2E fully supports PASR via mode registers MR16 (bank masking) and MR17 (segment masking). This feature allows selective refresh of active memory regions only, reducing current consumption during idle periods. PASR behavior is defined in section 7.4.18–7.4.19 of the official datasheet and is functionally identical across the W97BH6MB/W97BH2MB family.
What package type and ball count does the W97BH6MBVA2E use?
The W97BH6MBVA2E uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.4 mm ball pitch and 8 mm × 11.5 mm body dimensions. Ball assignment follows JEDEC LPDDR2-S4B standard layout, verified in Section 4 (Ball Assignment) and Section 5 (Ball Configuration) of the datasheet revision A01-002.
How is ZQ calibration implemented on the W97BH6MBVA2E?
ZQ calibration on the W97BH6MBVA2E is performed using an external 240Ω ±1% precision resistor connected to the ZQ pin. Calibration is initiated via MRW command to MR10 and adjusts RONPU/RONPD driver impedances to maintain 40Ω output resistance. Full calibration sequences (long/short/reset) are detailed in Section 7.4.24 of the datasheet.
What is the operating temperature range for the W97BH6MBVA2E?
The W97BH6MBVA2E is specified for commercial temperature operation from 0°C to +85°C ambient, as stated in Section 8.2.3 (Operating Temperature Conditions) of the datasheet. It includes an integrated temperature sensor (accessed via MR4) to support dynamic thermal management, but extended temperature grades (e.g., industrial −40°C to +85°C) are not supported by this specific variant.
W97BH6MBVA2E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -25°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH6MBVA2E FAQ
1.How can I place an order for W97BH6MBVA2E through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6MBVA2E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6MBVA2E reliable?
The price and inventory of W97BH6MBVA2E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA2E is usually 5 days.
3.What payment methods are accepted for W97BH6MBVA2E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA2E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6MBVA2E?
W97BH6MBVA2E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6MBVA2E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6MBVA2E?
For technical support, including W97BH6MBVA2E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA2E requirements.
6.How does Aetrix verify that W97BH6MBVA2E is sourced from the original manufacturer or authorized distributors?
All W97BH6MBVA2E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA2E meets industry standards.
7.What is the process for return or replacement of W97BH6MBVA2E?
All W97BH6MBVA2E units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA2E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6MBVA2E part is unused and in its original packaging.
Return procedure for W97BH6MBVA2E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6MBVA2E Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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M24C02-FMC6TG
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AT24C04C-SSHM-T
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