Winbond Electronics Corporation W97BH6MBVA2E TR

Overview

W97BH6MBVA2E TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1066 Mbps data rate with 1.2V core/VDDQ supply, supporting burst lengths of 4/8 and CAS latencies of 3/5 for use in smartphone application processors and embedded multimedia SoCs.

For engineers reviewing the W97BH6MBVA2E TR datasheet, W97BH6MBVA2E TR pinout, W97BH6MBVA2E TR application, or W97BH6MBVA2E TR equivalent, key selection criteria include LPDDR2-1066 timing compliance, PASR bank/segment masking support, ZQ calibration capability, and deep power-down entry/exit timing under 100 µs.

Technical Context

This device implements JEDEC-standard LPDDR2-S4B interface with dual-channel 16-bit data bus (x16 organization), supports all mandatory LPDDR2 commands including auto-precharge, partial array self-refresh (PASR), and temperature-sensor-assisted DQ calibration via MR4 and MR32/MR40. It uses HSUL_12 I/O standard with differential CK/DQS and single-ended CA/CS_n signaling.

Power management includes three low-power states: Power-Down (tCKE ≤ 10 ns exit), Deep Power-Down (tDPD ≤ 100 µs exit), and Self-Refresh (tIS ≤ 100 ns entry). Initialization requires tRST ≥ 200 µs after VDD/VDDQ stabilization and mode register programming via MRW to MR63 reset.

Key Specifications

Pinout & Package

Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm footprint, 0.65 mm ball pitch, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LPDDR2 memory applications.

Compared with MT42L128M16D1KD-107 IT:E and K4P2G324EC-BCF7, the W97BH6MBVA2E TR provides unique integration of on-die temperature sensing with MR4, segment-level PASR control via MR17, and tighter tDPD ≤ 100 µs specification - critical for ultra-low-power always-on edge devices.

Availability

W97BH6MBVA2E TR is available at Aetrix Electronics and suitable for smartphone application processor memory, automotive infotainment DRAM, and industrial HMI display controller applications requiring stable component supply and full LPDDR2-1066 compliance.

Supply support for W97BH6MBVA2E TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, LPDDR, and mobile DRAM products for consumer, industrial, and automotive markets.

The W97BH6MBVA2E TR belongs to Winbond's LPDDR2-S4B product line, designed specifically for power-constrained mobile and embedded systems requiring JEDEC-compliant low-voltage, high-bandwidth memory with advanced power management features.

FAQ

What is the maximum data rate supported by the W97BH6MBVA2E TR?

The W97BH6MBVA2E TR supports LPDDR2-1066 operation with a maximum data rate of 1066 Mbps (533 MHz clock frequency). This is confirmed in the AC timing specifications section of the datasheet, where tCK = 1.876 ns is specified for all high-speed operations including burst reads/writes and command decoding. The device meets JEDEC JESD209-2A timing requirements at this rate under 1.2V ±5% supply and –25°C to +85°C case temperature.

Does the W97BH6MBVA2E TR support partial array self-refresh (PASR)?

Yes, the W97BH6MBVA2E TR supports both bank-level and segment-level PASR via mode registers MR16 (PASR_Bank Mask) and MR17 (PASR_Segment Mask). This allows selective refresh of active memory regions only, reducing self-refresh current significantly - down to ≤12 µA in optimized configurations. The feature is documented in Section 7.4.18 and 7.4.19 of the datasheet with timing constraints for tIS and tRFC.

What package type and ball count does the W97BH6MBVA2E TR use?

The W97BH6MBVA2E TR uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 12.5 mm with 0.65 mm ball pitch. This is explicitly stated in Section 3 (Order Information) and illustrated in Section 4 (Ball Assignment) of the datasheet. The "VA2E" suffix in the part number denotes this specific VFBGA variant with RoHS-compliant, lead-free finish.

How does ZQ calibration work on the W97BH6MBVA2E TR?

The W97BH6MBVA2E TR implements four ZQ calibration modes - ZQINIT, ZQSHORT, ZQLONG, and ZQRESET - accessed via MRW commands to MR24. These adjust RONPU and RONPD driver impedances using an external 240Ω ±1% ZQ resistor. Calibration timing is defined in Section 7.4.24, with ZQSHORT requiring ≤128 tCK cycles and ZQLONG up to 1024 tCK cycles, enabling precise I/O termination matching across voltage and temperature variations.

What is the minimum CKE pulse width required to exit Power-Down mode on the W97BH6MBVA2E TR?

The minimum CKE high pulse width required to exit Power-Down mode on the W97BH6MBVA2E TR is 10 ns, as specified in Section 7.4.25.1 (Basic Power Down Entry and Exit Timing). This tight timing enables sub-microsecond wake-up latency, critical for responsive touchscreen and sensor interrupt handling. The value is measured at the device ball and assumes proper signal integrity on the CKE net.