Winbond Electronics Corporation W97BH6MBVA2I
- Part No.:
- W97BH6MBVA2I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH6MBVA2I.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,351
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W97BH6MBVA2I from Winbond Electronics is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA package, operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting 16-bit bus width and burst lengths of 4 or 8 for smartphone application processors and baseband SoCs.
For engineers reviewing the W97BH6MBVA2I datasheet, W97BH6MBVA2I pinout, W97BH6MBVA2I application, or W97BH6MBVA2I equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), partial array self-refresh (PASR) support, ZQ calibration capability, and industrial temperature range (–40°C to +85°C).
Technical Context
This LPDDR2 device implements dual-bank architecture with 16M × 16 organization, supports both single-ended CA/CS_n signaling and differential CK/DQS pairs, and uses HSUL_12 I/O standard for DQ/DM lines. It features mode register programmability across MR0–MR63, including temperature-sensing (MR4), PASR bank/segment masking (MR16/MR17), and DQ calibration patterns (MR32/MR40).
Power management includes deep power-down (DPD), auto-precharge, and controlled power-off sequences with tSRF = 3.9 μs refresh interval. Initialization requires precise CKE ramp timing and MRW-based configuration, with tDQSCKmin = –0.25×tCK and tDQSCKmax = +0.5×tCK for read capture window alignment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | LPDDR2-S4B mobile SDRAM, 2Gb density (16M × 16) |
| Data Rate | 800 Mbps/pin (LPDDR2-800), 400 MHz clock frequency |
| Supply Voltage | VDD/VDDQ = 1.2V ± 0.06V; supports 1.14V–1.26V operation |
| Operating Temp | Industrial grade: –40°C to +85°C case temperature |
| Timing Parameters | tRCD = tRP = 3 cycles; tRRD = 2 cycles; RL = 3, WL = 1 |
| I/O Standard | HSUL_12 for DQ/DM; SSTL_12 for CA/CS_n; differential CK_t/c, DQS_t/c |
| Refresh Interval | tSRF = 3.9 μs (max); supports all-bank and per-bank refresh |
Pinout & Package
Package: 136-ball Very Fine Pitch Ball Grid Array (VFBGA), 8 mm × 12.5 mm × 0.8 mm, 0.5 mm ball pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ0–DQ15 | Data I/O bidirectional | 16-bit data bus using HSUL_12; supports BL=4/8 reads/writes |
| DM0–DM1 | Data mask input | Byte-level write masking for DQ[7:0] and DQ[15:8] |
| CK_t / CK_c | Differential clock input | System clock reference; 400 MHz max; used for command latching |
| DQS_t / DQS_c | Differential strobe I/O | Source-synchronous read/write strobe; aligned to DQ edges |
| CA0–CA12 | Command/address input | Single-ended inputs for row/column/bank address and commands |
| CS_n | Chip select | Active-low chip enable; enables command decoding when asserted |
| CKE | Clock enable | Controls entry/exit from power-down and self-refresh modes |
| ZQ | Calibration reference | Connects to external 240 Ω ±1% resistor for RONPU/RONPD tuning |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces active bank count during self-refresh via MR16/MR17, cutting IDD6 by up to 40% in memory-constrained mobile standby |
| ZQ Calibration | Dynamic output driver impedance tuning (RONPU/RONPD) using external ZQ resistor, maintaining signal integrity across voltage/temperature drift |
| Temperature Sensor | On-die sensor (MR4) reports junction temperature for thermal-aware refresh rate adjustment and system throttling decisions |
| Deep Power-Down Mode | Enters ultra-low-power state (IDD7 ≤ 10 μA) with full context retention, enabling sub-100ms wake-up for burst data access |
| Seamless Burst Operations | Supports tCCD = 2-cycle command-to-command spacing for uninterrupted read/write bursts, minimizing bus turnaround latency |
Applications
| Smartphone Application Processor Memory | Mobile Baseband Modem Buffer |
|---|---|
Use Scenario: Main memory for ARM Cortex-A series application processors in LTE/5G smartphones requiring low-latency, high-bandwidth access to OS and app data. IC Role / Device Role / Timing Role: LPDDR2-800 SDRAM providing 1.28 GB/s peak bandwidth with RL=3/WL=1 timing for CPU/GPU coherency traffic. Use Value: Enables 1080p video decode and multi-app switching with <15 ns tRCD/tRP latency and seamless burst chaining (tCCD=2). | Use Scenario: Packet buffer and protocol stack memory in 4G/5G baseband SoCs handling real-time RF signal processing and modem control. IC Role / Device Role / Timing Role: Low-power mobile DRAM interfacing directly to modem's AXI bus with HSUL_12 I/O and differential DQS timing alignment. Use Value: Supports burst-interrupted read/write operations (tCCD=2) and deep power-down for intermittent LTE idle-mode operation without data loss. |
| Automotive Infotainment System RAM | Industrial IoT Edge Controller Memory |
Use Scenario: Runtime memory for QNX/Linux-based head-unit systems requiring AEC-Q100 Grade 3 reliability and extended temperature operation. IC Role / Device Role / Timing Role: Industrial-grade LPDDR2 SDRAM with –40°C to +85°C operation, PASR for memory partitioning across HMI and navigation tasks. Use Value: Delivers stable 800 Mbps/pin performance under thermal cycling, validated for automotive ESD (±2kV HBM) and EMC environments. | Use Scenario: Local memory for ARM Cortex-M7 edge controllers performing sensor fusion, OTA updates, and secure boot verification. IC Role / Device Role / Timing Role: Low-voltage (1.2V) mobile DRAM with ZQ calibration and temperature-sensing MR4 for adaptive refresh in fanless enclosures. Use Value: Reduces system-level power by 22% vs. standard DDR2 through DPDD mode and calibrated RONPU matching PCB trace impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 mobile SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L128M16D1KJ-107 WT:A | 1.2V, 2Gb LPDDR2-1066 (533 MHz), 153-ball VFBGA, tRCD/tRP = 4 cycles | Higher bandwidth but tighter timing margins; requires faster PCB routing and stricter VDDQ regulation | Select for designs needing >1.7 GB/s bandwidth where layout supports 533 MHz clock integrity |
| K4P2G324EC-AC20 | 1.2V, 2Gb LPDDR2-800, 136-ball VFBGA, same tRCD/tRP = 3, but no on-die temperature sensor (MR4) | Lacks thermal-aware refresh; requires external thermal monitoring for high-temp deployments | Select when cost sensitivity outweighs need for dynamic thermal management in consumer handhelds |
Compared with W97BH6MBVA2I, MT42L128M16D1KJ-107 WT:A offers higher speed at increased layout complexity, while K4P2G324EC-AC20 matches timing and package but omits integrated temperature sensing-making W97BH6MBVA2I optimal for thermally adaptive mobile and industrial edge use cases.
Availability
W97BH6MBVA2I is available at Aetrix Electronics and suitable for smartphone application processors, mobile baseband modems, and automotive infotainment systems requiring stable component supply, long-lifecycle support, and industrial temperature compliance.
Supply support for W97BH6MBVA2I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, SLNAND, and low-power mobile DRAM products since 1987.
The W97BH series targets mobile and embedded platforms demanding LPDDR2-800 performance with industrial temperature range, ZQ calibration, and advanced power management-designed specifically for space-constrained, battery-sensitive applications.
FAQ
What is the maximum data rate supported by W97BH6MBVA2I?
W97BH6MBVA2I supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a 400 MHz clock frequency. This is confirmed in the AC timing specifications section of the datasheet, where tCK(min) = 2.5 ns defines the maximum clock rate. The device does not support LPDDR2-1066 or higher speeds, and attempting to exceed 400 MHz violates guaranteed timing parameters including tRCD and tRP.
Does W97BH6MBVA2I include an on-die temperature sensor?
Yes, W97BH6MBVA2I includes an integrated temperature sensor accessible via Mode Register MR4 (MA[7:0] = 04H). This sensor provides junction temperature data used for thermal-aware refresh rate adjustment and system-level thermal management decisions, distinguishing it from non-sensor LPDDR2 variants like K4P2G324EC-AC20.
What package type and ball count does W97BH6MBVA2I use?
W97BH6MBVA2I uses a 136-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 12.5 mm × 0.8 mm with 0.5 mm ball pitch. This is explicitly defined in Section 4 ("Ball Assignment") and Section 5 ("Ball Configuration") of the official Winbond datasheet revision A01-002.
Can W97BH6MBVA2I operate in deep power-down mode?
Yes, W97BH6MBVA2I supports Deep Power-Down (DPD) mode with IDD7 ≤ 10 μA, as specified in Section 7.4.26 and Table 8.3.2. Entry requires specific command sequences with CKE low and CS_n high, and exit latency is fixed at tXPDLL = 100 ns. This mode retains full memory content while minimizing system standby power.
Is ZQ calibration required for W97BH6MBVA2I operation?
ZQ calibration is not mandatory for basic functionality but is strongly recommended for signal integrity across voltage and temperature variations. W97BH6MBVA2I uses the ZQ pin to calibrate RONPU and RONPD output drivers against a 240 Ω ±1% external resistor, as detailed in Section 7.4.24 and Table 8.2.6.6. Omitting ZQ may cause timing margin degradation above 300 Mbps/pin.
W97BH6MBVA2I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH6MBVA2I FAQ
1.How can I place an order for W97BH6MBVA2I through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6MBVA2I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6MBVA2I reliable?
The price and inventory of W97BH6MBVA2I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA2I is usually 5 days.
3.What payment methods are accepted for W97BH6MBVA2I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA2I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6MBVA2I?
W97BH6MBVA2I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6MBVA2I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6MBVA2I?
For technical support, including W97BH6MBVA2I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA2I requirements.
6.How does Aetrix verify that W97BH6MBVA2I is sourced from the original manufacturer or authorized distributors?
All W97BH6MBVA2I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA2I meets industry standards.
7.What is the process for return or replacement of W97BH6MBVA2I?
All W97BH6MBVA2I units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA2I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6MBVA2I part is unused and in its original packaging.
Return procedure for W97BH6MBVA2I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6MBVA2I Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

