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Winbond Electronics Corporation W97BH6MBVA2I TR
- Part No.:
- W97BH6MBVA2I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 134-VFBGA
- Datasheet:
-
W97BH6MBVA2I TR.pdf
- Description:
- IC DRAM 2GBIT HSUL 12 134VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,255
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Product details
Overview
W97BH6MBVA2I TR from Winbond is a 2Gb LPDDR2-S4B mobile SDRAM in 136-ball VFBGA (8mm × 12.5mm, 0.65mm pitch), operating at 1.2V core/VDDQ with 800 Mbps/pin data rate (LPDDR2-800), supporting burst lengths of 4/8 and on-die termination for high-speed mobile memory subsystems in smartphones and tablets.
For engineers reviewing the W97BH6MBVA2I TR datasheet, W97BH6MBVA2I TR pinout, W97BH6MBVA2I TR application, or W97BH6MBVA2I TR equivalent, key selection criteria include LPDDR2-800 timing compliance (tRCD = 3, tRP = 3, RL = 3/WL = 1), partial array self-refresh (PASR) support, ZQ calibration capability, and industrial temperature range (–40°C to +85°C).
Technical Context
This LPDDR2 SDRAM implements dual-channel 16-bit I/O architecture with 8 internal banks, supports both single-ended CA/CS_n and differential CK_t/CK_c/DQS_t/DQS_c signaling, and uses HSUL_12 I/O standard for DQ/DM lines. It features mode register programming across MR0–MR63 for configuration of burst type, read/write latency, temperature sensing, PASR masking, and DQ calibration patterns.
Power management includes deep power-down (DPD), auto-precharge, and controlled power-up/power-off sequences with tSRF refresh timing compliance. The device supports seamless burst reads/writes (tCCD = 2), burst terminate, write data mask, and per-bank refresh - all aligned with JEDEC JESD209-2A specification for LPDDR2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 2 Gb (256M × 8-bit organization) |
| Data Rate | 800 Mbps/pin (LPDDR2-800, 400 MHz clock) |
| Supply Voltage | 1.2 V ±0.06 V (VDD/VDDQ), 2.5 V for VDDCA |
| Operating Temp | –40°C to +85°C (industrial grade, suffix 'I') |
| Burst Length | Configurable BL = 4 or 8; supports non-wrap and wrap modes |
| Read Latency | RL = 3 or 5 cycles; WL = 1 cycle for writes |
| Refresh Interval | tREFI = 3.9 μs at 85°C; supports all-bank and per-bank refresh |
| ZQ Calibration | Supports ZQINIT, ZQSHORT, ZQLONG, and ZQRESET commands for RONPU/RONPD tuning |
Pinout & Package
Package: 136-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8.0 mm × 12.5 mm, 0.65 mm ball pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD, VDDQ | Power supply | 1.2 V core/I/O supply; separate planes reduce noise coupling |
| VDDCA | Command/address supply | 2.5 V supply for CA/CS_n inputs; independent rail improves signal integrity |
| CK_t / CK_c | Differential clock input | LVDS-compatible differential pair; defines system timing reference |
| DQS_t / DQS_c | Differential strobe | Source-synchronous read/write strobe; enables precise DQ sampling |
| DQ[0:15] | Data I/O | 16-bit bidirectional data bus using HSUL_12 driver standard |
| DM[0:1] | Data mask | Byte-level write masking for DQ[0:7] and DQ[8:15]; supports partial writes |
| CA[0:11] | Command/address bus | 12-bit single-ended bus for row/column/bank address and command encoding |
| CKE | Clock enable | Asynchronous active-high input controlling entry/exit from power-down states |
Key Features
| Feature | Design Value |
|---|---|
| Partial Array Self-Refresh (PASR) | Reduces dynamic power by masking inactive banks/segments via MR16/MR17 |
| On-Die Termination (ODT) | Programmable ODT for DQ/DM lines eliminates external resistors and improves signal integrity |
| ZQ Calibration | Dynamic RONPU/RONPD tuning using external 240 Ω ±1 % resistor for impedance matching |
| Temperature Sensor | Integrated sensor accessible via MR4; enables thermal-aware refresh and power management |
| Deep Power-Down Mode | Ultra-low IDD6 current (<10 μA) with fast wake-up (tDPDEX < 500 ns) |
| Seamless Burst Operations | tCCD = 2-cycle constraint enables back-to-back reads/writes without gap penalties |
Applications
| Smartphone Application | Tablet Memory Subsystem |
|---|---|
Use Scenario: Main application memory in mid-tier Android smartphones with ARM Cortex-A53/A55 SoCs. IC Role / Device Role / Timing Role: LPDDR2-800 SDRAM providing 1.28 GB/s peak bandwidth to SoC memory controller. Use Value: PASR and deep power-down reduce average system power by >35% during UI idle and background app suspension. | Use Scenario: Dual-channel memory interface in 7–10 inch tablets requiring low-profile, high-density memory. IC Role / Device Role / Timing Role: 16-bit × 2-channel LPDDR2 component supporting burst-8 reads with RL=5 for GPU texture streaming. Use Value: HSUL_12 I/O and differential strobes ensure signal integrity at 400 MHz clock with <15 ps jitter margin. |
| Industrial HMI Display | Automotive Infotainment |
Use Scenario: Graphics buffer memory in fanless industrial HMIs operating continuously at 70°C ambient. IC Role / Device Role / Timing Role: Temperature-compensated LPDDR2 with MR4-based thermal monitoring and adaptive refresh. Use Value: Industrial temp rating (–40°C to +85°C) and tSRF compliance guarantee reliable operation over full thermal lifecycle. | Use Scenario: Application memory in automotive infotainment head units with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Non-volatile boot-time memory interface supporting secure boot and firmware update buffers. Use Value: ZQ calibration and on-die termination maintain signal integrity across vehicle EMI environments and voltage transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar LPDDR2 memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT42L256M16RE-125:E | 2Gb LPDDR2-1066 (533 MHz), 1.2V, 153-ball VFBGA (9×13.5 mm); higher speed but larger footprint | Requires PCB redesign for ball count and pitch; supports RL=4/WL=2 for tighter timing margins | Select when bandwidth >1.7 GB/s is required and board space allows larger package |
| IS42S16160F-6BLI | 256Mb SDR SDRAM, 3.3V, 54-pin TSOP; not LPDDR2 - lacks differential clocks, ZQ, PASR, or deep power-down | Legacy design migration only; incompatible interface and power architecture | Use only for cost-sensitive, non-mobile designs where LPDDR2 features are unnecessary |
Compared with MT42L256M16RE-125:E and IS42S16160F-6BLI, the W97BH6MBVA2I TR delivers optimal balance of LPDDR2-800 performance, industrial temperature resilience, and power efficiency in space-constrained mobile and embedded platforms - without requiring layout changes needed for higher-speed or legacy alternatives.
Availability
W97BH6MBVA2I TR is available at Aetrix Electronics and suitable for smartphone memory modules, tablet SoC interfaces, and industrial HMI display buffers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for W97BH6MBVA2I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and low-power DRAM for mobile, automotive, and industrial markets.
The W97BH series targets LPDDR2 memory applications in resource-constrained portable devices, emphasizing power efficiency, JEDEC compliance, and robustness across extended temperature ranges.
FAQ
What is the maximum supported data rate for W97BH6MBVA2I TR?
The W97BH6MBVA2I TR supports LPDDR2-800 operation at 800 Mbps per pin, corresponding to a 400 MHz differential clock frequency. This is confirmed in the AC timing specifications (Section 7.4.3.3–7.4.3.4) and electrical characteristics table (Section 8.2.3), with tCK = 2.5 ns minimum. The device does not support LPDDR2-1066 or higher rates.
Does W97BH6MBVA2I TR support on-die termination (ODT)?
Yes, W97BH6MBVA2I TR supports programmable on-die termination for DQ and DM lines via mode register MR3 (MA[7:0] = 03H). ODT values are configurable to match system impedance, eliminating need for external termination resistors and improving signal integrity in high-speed layouts.
What is the purpose of the VDDCA supply pin on W97BH6MBVA2I TR?
The VDDCA pin supplies 2.5 V to the command/address input buffers (CA[0:11], CS_n) of the W97BH6MBVA2I TR. This separate rail isolates sensitive control signaling from noisy core/I/O supplies, ensuring robust setup/hold timing and noise immunity for critical command decoding - as specified in Section 8.2.1 and Table 5.2.
How does W97BH6MBVA2I TR implement partial array self-refresh (PASR)?
W97BH6MBVA2I TR implements PASR through mode registers MR16 (bank mask) and MR17 (segment mask), allowing selective refresh of active memory regions only. This reduces refresh current by up to 75% compared to full-array refresh, directly lowering system power - verified in Sections 7.4.18–7.4.19 and MR definition tables.
Is W97BH6MBVA2I TR compatible with JEDEC LPDDR2 standard JESD209-2A?
Yes, W97BH6MBVA2I TR fully complies with JEDEC JESD209-2A. All timing parameters (tRCD, tRP, tRRD, tFAW, tCCD), command encodings, state diagrams, and electrical specifications align with the standard - explicitly stated in Section 1 (General Description) and validated across Sections 7.4 and 8.2.
W97BH6MBVA2I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 134-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - Mobile LPDDR2-S4B
- Memory Size:
- 2Gbit
- Memory Organization:
- 128M x 16
- Memory Interface:
- HSUL_12
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- -
- Voltage - Supply:
- 1.14V ~ 1.3V, 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 134-VFBGA (10x11.5)
W97BH6MBVA2I TR FAQ
1.How can I place an order for W97BH6MBVA2I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W97BH6MBVA2I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W97BH6MBVA2I TR reliable?
The price and inventory of W97BH6MBVA2I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W97BH6MBVA2I TR is usually 5 days.
3.What payment methods are accepted for W97BH6MBVA2I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W97BH6MBVA2I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W97BH6MBVA2I TR?
W97BH6MBVA2I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W97BH6MBVA2I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W97BH6MBVA2I TR?
For technical support, including W97BH6MBVA2I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W97BH6MBVA2I TR requirements.
6.How does Aetrix verify that W97BH6MBVA2I TR is sourced from the original manufacturer or authorized distributors?
All W97BH6MBVA2I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W97BH6MBVA2I TR meets industry standards.
7.What is the process for return or replacement of W97BH6MBVA2I TR?
All W97BH6MBVA2I TR units undergo pre-shipment inspection (PSI). If there is an issue with W97BH6MBVA2I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W97BH6MBVA2I TR part is unused and in its original packaging.
Return procedure for W97BH6MBVA2I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W97BH6MBVA2I TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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AT24C08C-STUM-T
Microchip Technology
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