Winbond Electronics Corporation W9812G2KB-6I

Overview

W9812G2KB-6I from Winbond is a 1M × 4 banks × 32-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, supporting sequential/interleaved burst lengths of 1–8, and rated for industrial temperature range (−40°C to +85°C). It delivers up to 166 million words per second bandwidth and uses LVTTL interface for compatibility with legacy embedded controllers and FPGA-based memory subsystems in industrial HMI and network edge devices.

For engineers reviewing the W9812G2KB-6I datasheet, W9812G2KB-6I pinout, W9812G2KB-6I application, or W9812G2KB-6I equivalent, key selection criteria include its dual-die-package (DDP) architecture, TFBGA-90 (8×13 mm²) ball layout, auto-precharge timing constraints, self-refresh current (≤4 mA), and bank interleaving capability for latency hiding in real-time buffer applications.

Technical Context

This SDRAM implements four independent 1M × 32-bit banks with shared address/command bus and separate DQ[31:0] I/O lines. Its internal architecture includes programmable mode register control for burst length (1/2/4/8/full page), CAS latency (2 or 3), and burst type (sequential or interleave), enabling optimization for throughput versus access latency trade-offs in burst-oriented data streaming.

It supports full command set compliance including Bank Activate, Read/Write with auto-precharge, Burst Stop, Self Refresh, and Power Down modes. Timing is fully synchronous to CLK rising edge; CKE gating controls clock enable, and DQM0–DQM3 provide per-byte write masking and output tri-state control during read bursts.

Key Specifications

Pinout & Package

W9812G2KB-6I is packaged in a 90-ball Thin Fine-Pitch Ball Grid Array (TFBGA) with 8 mm × 13 mm footprint and 0.8 mm ball pitch. The package integrates two identical 64 Mbit (4M × 16) SDRAM dies in a Dual-Die-Package (DDP) configuration, sharing control and address signals while doubling data width to 32 bits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16160B-6BLI and MT48LC16M16A2P-6A:G, W9812G2KB-6I provides native 32-bit width in a single TFBGA-90 package, reducing PCB layer count and eliminating inter-device skew - critical for timing-critical embedded systems where signal integrity and layout simplicity outweigh marginal cost differences.

Availability

W9812G2KB-6I is available at Aetrix Electronics and suitable for industrial HMI, network edge buffering, and medical imaging subsystems requiring stable component supply, long-term lifecycle assurance, and guaranteed −40°C to +85°C operation without derating.

Supply support for W9812G2KB-6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR Flash, PSRAM, and SDRAM products for industrial, automotive, and communications markets.

The W9812G2KB series belongs to Winbond's industrial-grade SDRAM product line, designed specifically for embedded systems demanding reliable, low-power, wide-temperature memory with pin-compatible scalability across density and speed grades.

FAQ

What is the maximum data bandwidth of the W9812G2KB-6I?

The W9812G2KB-6I achieves a maximum data bandwidth of 166 million words per second. This is derived from its 166 MHz clock frequency and 32-bit data bus width, delivering 531.2 MB/s peak throughput. The actual sustained bandwidth depends on burst length, CAS latency, and bank interleaving efficiency in the target application.

Does the W9812G2KB-6I support both sequential and interleaved burst modes?

Yes, the W9812G2KB-6I supports both sequential and interleaved burst addressing modes, configurable via the Mode Register Set command. Sequential mode increments column address linearly (e.g., n, n+1, n+2); interleaved mode toggles lower address bits for cache-friendly access patterns. Both modes are supported for burst lengths of 1, 2, 4, 8, and full page.

How does the Dual-Die-Package (DDP) architecture affect W9812G2KB-6I functionality?

The W9812G2KB-6I integrates two identical 64 Mbit SDRAM dies in one TFBGA-90 package, combining their 16-bit data buses into a unified 32-bit interface. Address, command, and clock signals are shared; each die operates as two banks within the 4-bank logical structure. This eliminates inter-chip skew and simplifies PCB layout versus discrete dual-SRAM solutions.

What is the minimum setup time required before issuing the first Mode Register Set command after power-up?

After power-up, the W9812G2KB-6I requires a minimum 200 µs pause before any command, followed by a precharge-all command. Only after all banks are precharged may the Mode Register Set command be issued. Additionally, eight Auto Refresh cycles must be completed either before or after Mode Register programming to ensure stable internal state prior to normal operation.

Can the W9812G2KB-6I operate in Self Refresh mode at its full industrial temperature range?

Yes, the W9812G2KB-6I is fully specified for Self Refresh operation across its entire industrial temperature range (−40°C to +85°C), with maximum self-refresh current limited to 4 mA. The device enters Self Refresh when CS#, RAS#, CAS#, and CKE are held low with WE# high; it exits upon CKE return high, requiring tXSR delay before next command.