Winbond Electronics Corporation W9812G2KB-6 TR

Overview

W9812G2KB-6 TR from Winbond is a 1M × 4 banks × 32-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V supply, and TFBGA-90 (8×13 mm²) dual-die package. It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page in sequential or interleave mode for high-throughput memory buffering in embedded controllers.

For engineers reviewing the W9812G2KB-6 TR datasheet, W9812G2KB-6 TR pinout, W9812G2KB-6 TR application, or W9812G2KB-6 TR equivalent, key selection criteria include CL3 timing compliance at 166 MHz, dual-die 64Mbit density per die, LVTTL interface compatibility, auto-precharge support, and industrial-grade thermal margin validation for sustained burst read/write cycles in real-time systems.

Technical Context

This SDRAM implements four independent 1M×32-bit banks with programmable mode register control over burst length, CAS latency (CL2/CL3), and burst type (sequential/interleave). Its dual-die-package (DDP) architecture integrates two identical 4M×16-bit SDRAM dies sharing clock, command, and address buses while maintaining separate DQ groups (DQ[15:0] and DQ[31:16]) and dedicated DQM lines per 16-bit segment.

Functional operation relies on precise timing coordination: tRCD ≥ 20 ns, tRP ≥ 20 ns, tRC ≥ 60 ns, and tDAL = tWR + tRP for auto-precharge writes. The device requires eight CBR auto-refresh cycles post-mode-register initialization and supports self-refresh with ≤4 mA current draw, enabling low-power retention during system sleep states without external refresh controller intervention.

Key Specifications

Pinout & Package

W9812G2KB-6 TR uses a 90-ball TFBGA package (8 mm × 13 mm, 0.8 mm pitch) with VDD/VSS power segregation and dedicated VDDQ/VSSQ I/O rails to minimize switching noise on DQ lines. Ball assignments follow JEDEC-standard SDRAM layout with multiplexed address (A0–A11), bank select (BS0/BS1), and command (CS#, RAS#, CAS#, WE#) inputs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16400F-6BLI and MT48LC16M16A2P-6A, W9812G2KB-6 TR uniquely delivers 32-bit bus width and 128 Mbit density in a single TFBGA-90 package-reducing component count, simplifying layout, and minimizing interconnect skew critical for timing-closure in high-speed memory interfaces.

Availability

W9812G2KB-6 TR is available at Aetrix Electronics and suitable for industrial HMI display buffering, network packet forwarding, automotive ADAS preprocessing, and medical imaging data capture requiring stable component supply across multi-year production cycles.

Supply support for W9812G2KB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, SDR/DDR SDRAM, and mobile RAM products for industrial, communications, and consumer markets.

W9812G2KB-6 TR belongs to Winbond's legacy SDR SDRAM product line designed for cost-sensitive, high-reliability embedded systems requiring JEDEC-compliant 3.3V synchronous DRAM with extended temperature support and robust dual-die integration.

FAQ

What is the exact memory organization and density of W9812G2KB-6 TR?

W9812G2KB-6 TR is organized as 1M × 4 banks × 32 bits, totaling 128 Mbit (16 MB) of memory. It achieves this density via a dual-die-package (DDP) containing two identical 4M × 16-bit SDRAM dies, each contributing 64 Mbit. The specification explicitly confirms "two pieces of 64M bits chip sealed in one package" and validates the 1M × 4 × 32 structure in both General Description and Features sections.

Does W9812G2KB-6 TR support CAS Latency 2 or only CL3?

W9812G2KB-6 TR supports both CAS Latency 2 and CAS Latency 3, as confirmed in the Features section: "CAS Latency: 2 & 3". However, the -6 speed grade is specifically sorted and guaranteed for 166 MHz / CL3 operation per the Order Information table. CL2 operation may be possible at reduced frequencies but is not characterized or warranted for the -6 variant.

What package type and ball count does W9812G2KB-6 TR use?

W9812G2KB-6 TR uses a TFBGA-90 package measuring 8 mm × 13 mm with 0.8 mm ball pitch, as stated in the Features section and illustrated in the Ball Configuration diagram. The "90 Ball" designation is explicitly called out, and the ball map (pages 5–6) confirms 90 functional and NC positions, including VDD, VSS, VDDQ, VSSQ, address, command, and DQ terminals.

How does the dual-die architecture of W9812G2KB-6 TR affect signal routing and timing?

W9812G2KB-6 TR's dual-die design shares CLK, CKE, CS#, RAS#, CAS#, WE#, BS0/BS1, and A0–A11 across both dies but splits DQ into two 16-bit groups (DQ[15:0] and DQ[31:16]) with independent DQM0–DQM3 control. This requires matched trace lengths only within each 16-bit segment-not across the full 32-bit bus-reducing PCB routing complexity while preserving timing closure per die.

Is W9812G2KB-6 TR compatible with standard SDRAM controllers targeting 3.3V LVTTL interfaces?

Yes, W9812G2KB-6 TR is fully compatible with JEDEC-standard 3.3V SDRAM controllers. Its Features section explicitly lists "Interface: LVTTL", and electrical characteristics (Section 9) confirm 3.3V ± 0.3V supply, TTL-compatible input thresholds, and output drive strength meeting LVTTL specifications. No level-shifting or interface adaptation is required for controllers compliant with PC100/PC133 standards.