Winbond Electronics Corporation W9812G6IH-6

Overview

W9812G6IH-6 from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V LVTTL interface, and TSOP II-54 package. It delivers 166 million words/second bandwidth and supports burst lengths of 1–8 and full-page, enabling high-throughput memory access in embedded controllers and legacy industrial systems.

For engineers reviewing the W9812G6IH-6 datasheet, W9812G6IH-6 pinout, W9812G6IH-6 application, or W9812G6IH-6 equivalent, key selection criteria include its 166 MHz/CL3 timing compliance, 4K refresh cycles per 64 ms, self-refresh capability, TSOP II-54 mechanical footprint, and support for interleaved bank operations to hide precharge latency.

Technical Context

This SDRAM implements a fully synchronous architecture with programmable mode register control over burst length (1, 2, 4, 8, full page), burst type (sequential or interleave), and CAS latency (2 or 3). Its four internal banks enable true interleaving-allowing one bank to be accessed while another precharges-reducing effective access latency.

It supports auto-precharge (via A10 high during read/write), controlled precharge, self-refresh (CKE low), and power-down modes. All command decoding occurs on the rising edge of CLK; DQ masking is managed independently via LDQM and UDQM for byte-level write control.

Key Specifications

Pinout & Package

W9812G6IH-6 uses a 54-pin TSOP II (Type II) thin small-outline package, 400 mil wide, with lead-free RoHS-compliant construction. Pin 1 is located at the bottom-left corner when the marking side faces up and the notch is oriented left.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with W9812G6IH-6, IS42S16100E-6BLI extends temperature range without changing footprint or timing, while MT48LC16M16A2P-6A offers identical performance but demands board-level rework due to incompatible pin assignment and power delivery structure.

Availability

W9812G6IH-6 is available at Aetrix Electronics and suitable for industrial HMI controllers, legacy networking switches, medical diagnostic displays, and automated test equipment requiring stable component supply across extended production lifecycles.

Supply support for W9812G6IH-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and trusted computing solutions, with global manufacturing and distribution infrastructure.

W9812G6IH-6 belongs to Winbond's legacy SDR SDRAM product line, designed specifically for cost-sensitive, long-lifecycle embedded systems requiring proven 3.3V LVTTL compatibility and TSOP II mechanical fit.

FAQ

What is the maximum operating frequency and CAS latency of the W9812G6IH-6?

The W9812G6IH-6 is rated for 166 MHz maximum clock frequency with CAS Latency 3 (CL3). This means the device requires exactly three clock cycles between issuing a column address strobe (CAS) and the appearance of the first valid data word on DQ pins. Its AC timing parameters-including tAC, tRCD, and tRP-are guaranteed only under these conditions, and it is not rated for 200 MHz operation like the -5 variant.

Does the W9812G6IH-6 support self-refresh mode, and how is it activated?

Yes, the W9812G6IH-6 supports self-refresh mode. It is activated by asserting CS, RAS, CAS, and WE low while holding CKE low on the rising edge of CLK. Once entered, the SDRAM internally manages all refresh cycles without external clock or command input-only CKE must remain low. Exit occurs when CKE returns high, followed by tXSR delay before new commands are accepted.

What is the purpose of the LDQM and UDQM pins on the W9812G6IH-6?

LDQM (Lower Data Mask) and UDQM (Upper Data Mask) provide byte-level write masking for the 16-bit DQ bus. LDQM controls DQ0–DQ7, and UDQM controls DQ8–DQ15. When sampled high during a write cycle, the corresponding byte lane is blocked with zero latency-enabling partial-word writes without read-modify-write overhead. During reads, they place the masked byte outputs in high-impedance state.

Can the W9812G6IH-6 be used in automotive applications?

No-the W9812G6IH-6 is specified for 0°C to +70°C operation and is not qualified for automotive use. Winbond offers the W9812G6IH-6A variant, which is explicitly rated for –40°C to +85°C and undergoes additional AEC-Q100 stress testing. Substituting W9812G6IH-6 in automotive designs risks data retention failure or timing violation outside its validated temperature envelope.

How does auto-precharge work on the W9812G6IH-6, and what pin controls it?

Auto-precharge on the W9812G6IH-6 is enabled by driving A10 high during a READ or WRITE command. When activated, the SDRAM automatically initiates precharge of the accessed bank shortly before burst completion-eliminating the need for a separate PRECHARGE command. For reads, precharge starts tCL clocks before burst end; for writes, it begins two clocks after final data-in (tWR), followed by tRP before reactivation.