Winbond Electronics Corporation W9812G6JB-6I

Overview

W9812G6JB-6I from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, supporting burst lengths of 1/2/4/8/full page, and designed for industrial temperature range (–40°C to +85°C). It delivers up to 166 million words per second bandwidth and features self-refresh, auto-precharge, and LVTTL-compatible interface for embedded main memory applications.

For engineers reviewing the W9812G6JB-6I datasheet, W9812G6JB-6I pinout, W9812G6JB-6I application, or W9812G6JB-6I equivalent, key selection considerations include its TFBGA-54 (8×8 mm²) package, industrial-grade thermal rating, programmable mode register, dual DQM masking, and bank-interleaved access architecture optimized for sustained data throughput in resource-constrained systems.

Technical Context

This SDRAM implements four independent 2M-word banks with shared address multiplexing (A0–A11), bank-select inputs (BS0/BS1), and LVTTL-compatible control signals (CLK, CKE, /CS, /RAS, /CAS, /WE). Its internal refresh counter supports 4K cycles per 64 ms, and clock-suspend and power-down modes reduce active power consumption during idle periods.

The device uses a programmable Mode Register to configure burst type (sequential/interleave), burst length, and CAS latency. It supports full-page burst reads/writes, read/write interruption handling via DQM-controlled tri-state, and auto-precharge triggered by A10 assertion - enabling efficient page-mode access across banks without external refresh management.

Key Specifications

Pinout & Package

W9812G6JB-6I is housed in a 54-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 mm × 8 mm with 0.8 mm ball pitch. The package separates core logic power (VDD/VSS) from I/O power (VDDQ/VSSQ) to minimize switching noise on data lines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16160J-6BLI and MT48LC16M16A2P-6A:G, W9812G6JB-6I offers the lowest self-refresh current (2 mA), guaranteed industrial temperature compliance without derating, and native TFBGA-54 footprint - making it optimal for new compact, thermally constrained, and long-lifecycle embedded designs.

Availability

W9812G6JB-6I is available at Aetrix Electronics and suitable for industrial HMI systems, network edge routers, medical diagnostic devices, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W9812G6JB-6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and SDRAM products for industrial, communications, and consumer markets.

W9812G6JB-6I belongs to Winbond's W98 series of high-reliability SDRAMs, engineered specifically for industrial and networking applications demanding robust timing margins, extended temperature operation, and long-term supply stability.

FAQ

What is the maximum supported clock frequency for W9812G6JB-6I?

W9812G6JB-6I is rated for a maximum clock frequency of 166 MHz, corresponding to a 6 ns clock period. This speed grade is validated across the full industrial temperature range (–40°C to +85°C) and supports CAS Latency 3 timing. Operation above this frequency violates AC specifications and may result in data corruption or command misinterpretation.

Does W9812G6JB-6I support both sequential and interleave burst addressing modes?

Yes, W9812G6JB-6I supports both sequential and interleave burst addressing modes, configured via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleave mode toggles address bits starting from A0. The selected mode affects burst address generation and must match system controller expectations to avoid data misalignment.

How does auto-precharge function in W9812G6JB-6I, and what triggers it?

Auto-precharge in W9812G6JB-6I is triggered when A10 is driven high during a Read or Write command. Upon activation, the SDRAM automatically initiates precharge of the accessed bank after the final burst transfer, eliminating the need for a separate Precharge command. This reduces command overhead and improves bandwidth efficiency in page-mode applications.

What is the purpose of separate VDDQ and VSSQ pins on W9812G6JB-6I?

VDDQ and VSSQ provide dedicated power and ground for the DQ input/output buffers, electrically isolated from core logic supplies (VDD/VSS). This separation minimizes switching noise coupling from data bus activity into sensitive internal logic, improving signal integrity, timing margin, and noise immunity - especially critical for high-speed 166 MHz operation with 16-bit parallel data paths.

Can W9812G6JB-6I operate in self-refresh mode without external clocks or commands?

Yes, W9812G6JB-6I enters self-refresh mode when CS, /RAS, /CAS, and CKE are all held low with /WE high at a CLK rising edge. Once entered, the device suspends all external command recognition, disables its internal clock, and executes internal refresh cycles autonomously using an on-chip timer. Only CKE high is required to exit - no clock restart sequence or initialization is needed.