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Winbond Electronics Corporation W9812G6JB-6I TR

Part No.:
W9812G6JB-6I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
54-TFBGA
Datasheet:
AetrixW9812G6JB-6I TR.pdf
Description:
IC DRAM 128MBIT PAR 54TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,447

Please send an inquiry. Send us your inquiry, and we will respond immediately.

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Product details

Overview

W9812G6JB-6I TR from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, supporting burst lengths of 1/2/4/8/full-page and auto-precharge functionality. It delivers up to 166 million words per second bandwidth and is rated for industrial temperature range (–40°C to +85°C), making it suitable for embedded control, industrial HMI, and network edge device main memory.

For engineers reviewing the W9812G6JB-6I TR datasheet, W9812G6JB-6I TR pinout, W9812G6JB-6I TR application, or W9812G6JB-6I TR equivalent, key selection criteria include its TFBGA-54 (8×8 mm) package, LVTTL interface compatibility, self-refresh capability (2 mA max), 4K refresh cycles/64 ms timing, and programmable mode register for burst/latency configuration.

Technical Context

This SDRAM implements four independent 2M-word banks with interleaved access support to hide precharge latency. Its command decoder accepts standard LVTTL-level inputs (CLK, CKE, /CS, /RAS, /CAS, /WE, BS0/BS1, A0–A11, DQ0–DQ15, LDQM/UDQM) and executes bank activate, read/write, auto-precharge, self-refresh, and power-down operations synchronized to the rising edge of CLK.

The device uses multiplexed row/column addressing with A0–A11, where A10 controls all-bank vs. bank-specific precharge, and supports both sequential and interleave burst addressing modes. Internal refresh counter ensures compliance with 64 ms refresh interval via 4,096 auto-refresh cycles, while separate VDDQ/VSSQ rails reduce I/O noise coupling.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization2,097,152 words × 4 banks × 16 bits = 128 Mbit total capacity
Max Clock Frequency166 MHz - defines maximum data throughput and system timing budget
CAS LatencyCL = 3 - determines minimum read-to-data-valid delay in clock cycles
Burst Length1, 2, 4, 8, or full-page - configurable via mode register for optimized sequential access efficiency
Refresh Requirement4,096 cycles / 64 ms - mandates periodic refresh controller intervention to retain data
Operating Temperature–40°C to +85°C - validated for industrial-grade reliability without derating
Supply VoltageVDD = VDDQ = 3.0–3.6 V - compatible with 3.3 V ±0.3 V systems; dual-rail design isolates I/O noise

Pinout & Package

W9812G6JB-6I TR is housed in a RoHS-compliant, lead-free TFBGA-54 package (8 mm × 8 mm, 0.8 mm pitch). Ball layout follows JEDEC-standard SDRAM pinout with dedicated address, control, data, and power/ground balls.

Pin/Terminal Circuit Role Design Meaning
A0–A11Address InputMultiplexed row/column address lines; A10 selects all-bank precharge when high during command
BS0, BS1Bank SelectEncode active bank (0–3) during row activation or column access
DQ0–DQ15Data I/O16-bit bidirectional data bus; LDQM/UDQM mask lower/upper byte during reads/writes
/CS, /RAS, /CAS, /WECommand ControlActive-low signals decoded on CLK rising edge to execute bank activate, read, write, precharge, etc.
CLK, CKETiming ControlCLK synchronizes all inputs; CKE enables/disables internal clock and enters power-down/self-refresh modes
VDD, VDDQ, VSS, VSSQPower/GroundVDD/VSS power core logic; VDDQ/VSSQ isolate I/O buffers to minimize switching noise on data lines

Key Features

Feature Design Value
Programmable Mode RegisterEnables runtime configuration of burst length, CAS latency, and burst type (sequential/interleave) without hardware change
Auto-precharge SupportAutomatically initiates bank precharge after read/write completion-reduces software overhead and improves memory controller efficiency
Self-refresh ModeRetains data with only CKE held low; consumes ≤2 mA-enables low-power suspend states in battery-backed or energy-constrained systems
Interleaved Bank AccessAllows concurrent activation of multiple banks to overlap precharge and access delays-increases effective bandwidth in burst-intensive workloads
LVTTL-Compatible InterfaceDirect connection to 3.3 V microcontrollers, FPGAs, and ASICs without level-shifting-simplifies PCB routing and reduces BOM count

Applications

Industrial Human-Machine Interface (HMI) Network Edge Router Buffering

Use Scenario: Touchscreen-based control panels in factory automation requiring local frame buffer and application code storage.

IC Role / Device Role / Timing Role: Main system memory for ARM Cortex-A series processors running Linux-based UI stacks.

Use Value: 166 MHz operation and 4-bank interleaving sustain >130 MB/s sustained read bandwidth needed for real-time graphics rendering and multitasking.

Use Scenario: Packet buffering in Layer 3 switches handling 100 Mbps–1 Gbps Ethernet traffic with deep queue requirements.

IC Role / Device Role / Timing Role: External packet buffer memory interfaced to switch fabric ASICs via parallel SDRAM controller.

Use Value: Auto-precharge and burst-length flexibility reduce memory controller latency penalties during variable-size packet writes and reads.

Medical Diagnostic Imaging Module Smart Energy Meter Data Logger

Use Scenario: Portable ultrasound devices capturing and temporarily storing raw sensor frames before compression and transmission.

IC Role / Device Role / Timing Role: Frame buffer and intermediate processing memory for FPGA-accelerated image pipeline.

Use Value: Industrial temperature rating (–40°C to +85°C) and self-refresh ensure reliable operation in uncontrolled clinical environments with intermittent power.

Use Scenario: Tamper-resistant electricity meters logging voltage/current waveforms over 30-day intervals with local time-stamped storage.

IC Role / Device Role / Timing Role: High-reliability working memory for real-time waveform sampling and cryptographic signing routines.

Use Value: 2 mA self-refresh current and 64 ms refresh interval enable >10-year battery-backed retention without external refresh controller.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS42S16160J-6BLISame 128 Mbit organization, 166 MHz/CL3, TFBGA-54, but requires VDD = VDDQ = 3.3 V ±0.15 V (tighter tolerance)Valid for industrial temp; lacks explicit support for full-page burst mode per datasheetPrefer when tighter supply regulation is already present and full-page burst is unused
MT48LC16M16A2P-6A:J128 Mbit, 166 MHz/CL3, TSOP-54; higher tRC (12 ns vs. 10 ns) and no self-refresh current spec below 10 mATSOP package increases board area and limits thermal performance in sealed enclosuresSelect only if legacy TSOP footprint compatibility is mandatory and self-refresh current is not critical

Compared with W9812G6JB-6I TR, IS42S16160J-6BLI offers identical timing but stricter supply tolerance, while MT48LC16M16A2P-6A:J trades industrial-grade self-refresh for TSOP packaging-making W9812G6JB-6I TR optimal for new designs prioritizing low-power suspend and compact TFBGA integration.

Availability

W9812G6JB-6I TR is available at Aetrix Electronics and suitable for industrial HMI, network edge buffering, medical imaging modules, and smart energy metering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9812G6JB-6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontroller solutions, with over 30 years of DRAM design heritage and ISO 9001/14001 certified manufacturing.

W9812G6JB-6I TR belongs to Winbond's W98xxG6xJ SDRAM product line, engineered for cost-sensitive, high-reliability embedded systems needing industrial-temperature operation, low-power self-refresh, and standard LVTTL interface compatibility.

FAQ

What is the exact memory capacity and organization of W9812G6JB-6I TR?

W9812G6JB-6I TR provides 128 Mbit total capacity, organized as 2,097,152 words × 4 banks × 16 bits. This structure enables efficient bank-interleaved access and supports standard SDRAM controllers targeting 16-bit data paths. The 4-bank architecture allows overlapping row activation and column access to improve effective bandwidth beyond single-bank limits.

Does W9812G6JB-6I TR support self-refresh mode, and what is its typical current draw?

Yes, W9812G6JB-6I TR supports self-refresh mode with a maximum current draw of 2 mA at industrial temperature (–40°C to +85°C). This low-current self-refresh capability allows the device to retain data during system suspend states without external refresh control, making it suitable for battery-backed or energy-harvesting applications where power conservation is critical.

What package type and ball count does W9812G6JB-6I TR use?

W9812G6JB-6I TR uses a RoHS-compliant, lead-free TFBGA-54 package measuring 8 mm × 8 mm with 0.8 mm ball pitch. The 54-ball layout includes dedicated address, control, data, and split power/ground balls (VDD/VSS for core, VDDQ/VSSQ for I/O), ensuring signal integrity and thermal performance in space-constrained industrial PCBs.

What are the supported burst lengths and CAS latency settings for W9812G6JB-6I TR?

W9812G6JB-6I TR supports burst lengths of 1, 2, 4, 8, and full-page, all configurable via its programmable mode register. CAS latency is fixed at CL = 3 for the -6I speed grade, guaranteeing consistent 3-cycle read-to-data-valid timing at 166 MHz operation-enabling predictable memory controller timing closure in deterministic real-time systems.

How does the auto-precharge function operate in W9812G6JB-6I TR?

In W9812G6JB-6I TR, auto-precharge is triggered by asserting A10 high during a read or write command. For reads, precharge begins before burst completion; for writes, it starts two clocks after the final burst write cycle (tWR delay). This eliminates manual precharge commands, reducing memory controller overhead and improving bandwidth utilization in burst-heavy workloads.

W9812G6JB-6I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
54-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Size:
128Mbit
Memory Organization:
8M x 16
Memory Interface:
Parallel
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TFBGA (8x8)

W9812G6JB-6I TR FAQ

1.How can I place an order for W9812G6JB-6I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W9812G6JB-6I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9812G6JB-6I TR reliable?

The price and inventory of W9812G6JB-6I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9812G6JB-6I TR is usually 5 days.

3.What payment methods are accepted for W9812G6JB-6I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9812G6JB-6I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9812G6JB-6I TR?

W9812G6JB-6I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9812G6JB-6I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9812G6JB-6I TR?

For technical support, including W9812G6JB-6I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9812G6JB-6I TR requirements.

6.How does Aetrix verify that W9812G6JB-6I TR is sourced from the original manufacturer or authorized distributors?

All W9812G6JB-6I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9812G6JB-6I TR meets industry standards.

7.What is the process for return or replacement of W9812G6JB-6I TR?

All W9812G6JB-6I TR units undergo pre-shipment inspection (PSI). If there is an issue with W9812G6JB-6I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9812G6JB-6I TR part is unused and in its original packaging.

Return procedure for W9812G6JB-6I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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