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Winbond Electronics Corporation W9812G6KB-6

Name: W9812G6KB-6
Brand: Winbond Electronics Corporation
SKU: W9812G6KB-6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9812G6KB-6

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 54-TFBGA

Datasheet:: W9812G6KB-6.pdf

Description:: IC DRAM 128MBIT LVTTL 54TFBGA

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Product details

Overview

W9812G6KB-6 from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V supply, and TFBGA-54 (8×8 mm²) packaging. It delivers 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page in sequential or interleave mode for high-throughput memory buffering in embedded controllers and industrial display systems.

For engineers reviewing the W9812G6KB-6 datasheet, W9812G6KB-6 pinout, W9812G6KB-6 application, or W9812G6KB-6 equivalent, key selection criteria include its -6 speed grade (166 MHz/CL3), 0°C to 70°C industrial temperature range, LVTTL interface compatibility, and support for auto-precharge, self-refresh (at ≤85°C), and power-down modes in space-constrained SDRAM subsystems.

Technical Context

This SDRAM implements a four-bank architecture with independent row activation and column access, enabling bank interleaving to hide tRCD and tRP delays. Its command decoder interprets RAS/CAS/WE/CS on CLK rising edges to execute bank activate, read/write, precharge, auto-precharge, burst stop, and self-refresh operations.

The device uses multiplexed address pins A0–A11 (row/column shared), BS0/BS1 for bank selection, and LDQM/UDQM for byte-level write masking. Mode register programming configures burst length, CAS latency (2 or 3), and burst type-critical for timing-critical applications requiring deterministic access latency and seamless page-to-page transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	2,097,152 words × 4 banks × 16 bits - provides 16 MB total capacity with bank-level parallelism for concurrent page access.
Clock Frequency	166 MHz - enables 166 Mwords/s peak bandwidth; requires stable 3.3V ±0.3V supply and matched trace routing for signal integrity.
CAS Latency	CL = 3 - defines 3-clock-cycle delay between column address strobe and first valid data output; impacts real-time latency in video frame buffers.
Burst Length	1, 2, 4, 8, or full page - selectable via mode register; full-page burst accesses all 512 columns in a row without address incrementing.
Refresh Requirement	4K cycles / 64 ms @ 0°C–70°C - mandates periodic refresh commands to retain data; supported by internal counter and CBR mode.
Operating Temperature	0°C to 70°C - validated for commercial-grade embedded systems; excludes self-refresh above 85°C per datasheet specification.
Interface Standard	LVTTL - compatible with 3.3V microcontrollers and FPGAs; requires termination and controlled impedance for >100 MHz operation.
Package	TFBGA-54 (8×8 mm², 0.8 mm pitch) - surface-mount package with VDDQ/VSSQ separation for reduced I/O noise and improved DQ signal integrity.

Pinout & Package

W9812G6KB-6 is packaged in a 54-ball thin fine-pitch ball grid array (TFBGA) with 8×8 mm² footprint and 0.8 mm ball pitch. The package uses lead-free, RoHS-compliant materials and separates VDDQ/VSSQ from core VDD/VSS to isolate I/O power domains and suppress switching noise on data lines.

Pin/Terminal	Circuit Role	Design Meaning
A0–A11	Multiplexed Address	Shared row/column address inputs; A10 controls all-bank precharge when asserted during command decode.
BS0, BS1	Bank Select	Two-bit input selecting one of four internal banks during row activation or column access.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; LDQM masks lower byte (DQ0–DQ7), UDQM masks upper byte (DQ8–DQ15) during writes.
/CS, /RAS, /CAS, /WE	Command Control	Active-low control signals decoded on CLK rising edge to initiate all operations including activate, read, write, precharge, and refresh.
CLK, CKE	Timing Control	CLK synchronizes all inputs; CKE gates clock domain - low enables power-down, self-refresh, or clock suspend modes.
VDD, VDDQ, VSS, VSSQ	Power/Ground	Dual-supply design: VDD/VSS for core logic, VDDQ/VSSQ for I/O buffers - reduces crosstalk and improves signal fidelity at 166 MHz.

Key Features

Feature	Design Value
Four-bank interleaved architecture	Enables concurrent row activation across banks to eliminate tRC dead time and sustain burst throughput across page boundaries.
Programmable burst mode	Supports both sequential and interleave addressing - interleave mode avoids carry propagation in column counters for predictable burst timing.
Auto-precharge capability	Automatically initiates bank precharge after read/write completion when A10 is high - eliminates explicit precharge command overhead in streaming applications.
Byte-selectable write masking	LDQM/UDQM independently gate lower/upper 8-bit lanes - allows partial-word writes without read-modify-write cycles in graphics or packet buffer use cases.
Low-power operational modes	Self-refresh (≤85°C), power-down, and clock suspend reduce active current to ≤2 mA - extends runtime in battery-backed or thermally constrained systems.

Applications

Industrial HMI Display Controller	Embedded Network Router Buffer
Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with real-time update requirements. IC Role / Device Role / Timing Role: Primary SDRAM serving as dual-port frame buffer - accepts pixel data from ARM processor via AXI and outputs synchronized to display controller's RGB interface. Use Value: 166 MHz clock and CL3 latency ensure sub-100 ns average read access; four-bank interleaving sustains >90% bandwidth utilization during simultaneous GUI rendering and video overlay.	Use Scenario: Packet buffering in Layer 3 Ethernet switches handling 100 Mbps–1 Gbps traffic with deep queueing for QoS enforcement. IC Role / Device Role / Timing Role: Shared packet memory accessed by ingress/egress engines - configured with burst length 8 and auto-precharge to minimize command overhead per packet. Use Value: Full-page burst and interleave mode enable 512-byte packet reads/writes in ≤8 clocks; VDDQ/VSSQ isolation prevents data corruption during high-speed switching noise events.
Medical Imaging Data Acquisition	Automotive ADAS Preprocessing Module
Use Scenario: Capturing and staging raw sensor data from ultrasound transducer arrays before FPGA-based beamforming. IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer - receives parallel 16-bit ADC samples at 50 MSPS and streams to DMA controller using burst-length-4 reads. Use Value: 166 Mwords/sec bandwidth matches ADC throughput; CL3 latency ensures deterministic transfer timing critical for time-of-flight calculations.	Use Scenario: Temporary storage for radar point cloud data in 24 GHz ADAS modules prior to CAN FD transmission to ECU. IC Role / Device Role / Timing Role: Low-latency scratchpad memory - holds up to 16k points (each 16 bytes) with rapid random-access capability for clustering algorithms. Use Value: TFBGA-54 package fits tight PCB layouts; self-refresh mode maintains data integrity during vehicle ignition-off periods without external refresh controller.

Industrial HMI Display Controller

Embedded Network Router Buffer

Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with real-time update requirements.

IC Role / Device Role / Timing Role: Primary SDRAM serving as dual-port frame buffer - accepts pixel data from ARM processor via AXI and outputs synchronized to display controller's RGB interface.

Use Value: 166 MHz clock and CL3 latency ensure sub-100 ns average read access; four-bank interleaving sustains >90% bandwidth utilization during simultaneous GUI rendering and video overlay.

Use Scenario: Packet buffering in Layer 3 Ethernet switches handling 100 Mbps–1 Gbps traffic with deep queueing for QoS enforcement.

IC Role / Device Role / Timing Role: Shared packet memory accessed by ingress/egress engines - configured with burst length 8 and auto-precharge to minimize command overhead per packet.

Use Value: Full-page burst and interleave mode enable 512-byte packet reads/writes in ≤8 clocks; VDDQ/VSSQ isolation prevents data corruption during high-speed switching noise events.

Medical Imaging Data Acquisition

Automotive ADAS Preprocessing Module

Use Scenario: Capturing and staging raw sensor data from ultrasound transducer arrays before FPGA-based beamforming.

IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer - receives parallel 16-bit ADC samples at 50 MSPS and streams to DMA controller using burst-length-4 reads.

Use Value: 166 Mwords/sec bandwidth matches ADC throughput; CL3 latency ensures deterministic transfer timing critical for time-of-flight calculations.

Use Scenario: Temporary storage for radar point cloud data in 24 GHz ADAS modules prior to CAN FD transmission to ECU.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory - holds up to 16k points (each 16 bytes) with rapid random-access capability for clustering algorithms.

Use Value: TFBGA-54 package fits tight PCB layouts; self-refresh mode maintains data integrity during vehicle ignition-off periods without external refresh controller.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16100E-6BLI	Same 2M×4×16 organization, 166 MHz, CL3, TFBGA-54; but rated -40°C to 85°C and supports self-refresh up to 85°C.	Broader temperature range suits extended industrial or outdoor deployments where ambient exceeds 70°C.	Select IS42S16100E-6BLI if system must operate reliably beyond 70°C or require guaranteed self-refresh at full spec.
MT48LC16M16A2P-6A	Identical density and speed grade; uses TSOP-54 instead of TFBGA-54 and lacks LDQM/UDQM byte masking.	TSOP package eases hand-soldering and prototyping; absence of per-byte masking limits partial-word write efficiency.	Choose MT48LC16M16A2P-6A for cost-sensitive, non-space-constrained designs where board area and thermal profile allow TSOP mounting.

Compared with W9812G6KB-6, IS42S16100E-6BLI offers wider temperature compliance but same pinout and timing; MT48LC16M16A2P-6A trades TFBGA miniaturization and byte masking for TSOP manufacturability and legacy compatibility - neither is pin-compatible, requiring layout revision for substitution.

Availability

W9812G6KB-6 is available at Aetrix Electronics and suitable for industrial HMI displays, network packet buffering, medical imaging acquisition, automotive ADAS preprocessing, and embedded controller memory expansion requiring stable component supply across production lifecycles.

Supply support for W9812G6KB-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR Flash, RAM, and DRAM products for industrial, automotive, and consumer applications.

The W9812G6KB series belongs to Winbond's standard SDRAM product line, designed specifically for cost-effective, high-reliability main memory in resource-constrained embedded systems requiring LVTTL compatibility and compact packaging.

FAQ

What is the maximum operating frequency and CAS latency supported by W9812G6KB-6?

W9812G6KB-6 is rated for 166 MHz operation with CAS Latency 3 (CL3) at 0°C to 70°C. It also supports CL2 under specific voltage and timing conditions, but CL3 is the guaranteed latency at full speed. The -6 suffix explicitly denotes this speed grade, and the device will not meet AC specifications if operated above 166 MHz or outside its specified temperature range. W9812G6KB-6 requires precise setup/hold timing relative to CLK for reliable command registration.

Does W9812G6KB-6 support self-refresh mode, and what are the temperature limitations?

Yes, W9812G6KB-6 supports self-refresh mode, but only within the 0°C to 85°C case temperature range - and the datasheet explicitly states "Not support self refresh function with TCASE > 85°C". Since W9812G6KB-6 is rated for 0°C to 70°C operation, self-refresh is fully supported across its entire qualified temperature range. The self-refresh entry command requires CS/RAS/CAS/WE low and CKE low on CLK rising edge, and exit requires CKE high followed by tXSR delay before new commands.

What package type and ball count does W9812G6KB-6 use, and are VDDQ/VSSQ pins physically separated?

W9812G6KB-6 uses a TFBGA-54 package with an 8×8 mm² footprint and 0.8 mm ball pitch. Yes, VDDQ and VSSQ are physically separate balls - specifically allocated to improve I/O noise immunity: VDDQ powers the DQ output drivers and input receivers, while VSSQ serves as their dedicated return path, decoupled from core VDD/VSS. This separation is confirmed in the Ball Description table and directly impacts signal integrity at 166 MHz.

How does the auto-precharge function work in W9812G6KB-6, and when is it enabled?

Auto-precharge in W9812G6KB-6 is enabled by asserting A10 high during a Read or Write command. When activated, the SDRAM automatically initiates precharge of the accessed bank after burst completion - for reads, precharge begins tCL clocks before burst end; for writes, it starts two clocks after final data-in (tWR). W9812G6KB-6 prohibits interrupting auto-precharge cycles, and the bank remains inactive until tRP elapses. A10 must be low for standard (non-auto) precharge commands.

Can W9812G6KB-6 be used in systems requiring byte-level write masking, and how is it implemented?

Yes, W9812G6KB-6 supports byte-level write masking via LDQM (lower DQ0–DQ7) and UDQM (upper DQ8–DQ15) pins. During a write cycle, sampling either DQM high blocks corresponding byte lanes with zero latency - no read-modify-write needed. This is essential for efficient partial-word updates in graphics buffers or protocol stacks. The function is defined in the Ball Description section and verified in functional timing diagrams showing DQM-controlled DQ tri-state behavior.

W9812G6KB-6 Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 54-TFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM

Memory Size:: 128Mbit

Memory Organization:: 8M x 16

Memory Interface:: LVTTL

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TFBGA (8x8)

W9812G6KB-6 FAQ

1.How can I place an order for W9812G6KB-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for W9812G6KB-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9812G6KB-6 reliable?

The price and inventory of W9812G6KB-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9812G6KB-6 is usually 5 days.

3.What payment methods are accepted for W9812G6KB-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9812G6KB-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9812G6KB-6?

W9812G6KB-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9812G6KB-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9812G6KB-6?

For technical support, including W9812G6KB-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9812G6KB-6 requirements.

6.How does Aetrix verify that W9812G6KB-6 is sourced from the original manufacturer or authorized distributors?

All W9812G6KB-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9812G6KB-6 meets industry standards.

7.What is the process for return or replacement of W9812G6KB-6?

All W9812G6KB-6 units undergo pre-shipment inspection (PSI). If there is an issue with W9812G6KB-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9812G6KB-6 part is unused and in its original packaging.

Return procedure for W9812G6KB-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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