Winbond Electronics Corporation W9812G6KB-6 TR

Overview

W9812G6KB-6 TR from Winbond is a 2 M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3 V ± 0.3 V supply, and TFBGA-54 (8×8 mm²) packaging. It delivers up to 166 million words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page in sequential or interleave mode for embedded main memory applications.

For engineers reviewing the W9812G6KB-6 TR datasheet, W9812G6KB-6 TR pinout, W9812G6KB-6 TR application, or W9812G6KB-6 TR equivalent, key selection criteria include its -6 speed grade (166 MHz/CL3), industrial-grade thermal range (0°C to 70°C), LVTTL interface compatibility, self-refresh capability (2 mA max), and bank-interleaved access architecture optimized for burst-oriented data throughput in resource-constrained systems.

Technical Context

This SDRAM implements a four-bank architecture with programmable Mode Register control over burst length, CAS latency (2 or 3), and burst type (sequential/interleave). Its internal refresh counter supports 4K cycles per 64 ms at case temperatures ≤85°C and per 16 ms above 85°C, with dedicated Auto-precharge and Controlled Precharge commands.

Operation is fully synchronous to CLK rising edges; command decoding relies on RAS, CAS, WE, CS, CKE, and BS0/BS1 inputs. The device uses separate VDDQ/VSSQ rails for I/O buffers to reduce DQ noise, and LDQM/UDQM pins enable byte-level write masking with zero-latency blocking during writes and 2-cycle high-Z assertion during reads.

Key Specifications

Pinout & Package

W9812G6KB-6 TR is housed in a lead-free, RoHS-compliant TFBGA-54 package (8 mm × 8 mm, 0.8 mm ball pitch) with exposed thermal pad (non-electrical). Ball assignments follow JEDEC-standard SDRAM layout conventions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A:G, W9812G6KB-6 TR offers optimal balance of BGA footprint efficiency, commercial-temperature performance, and low active current-making it ideal for volume consumer and industrial edge devices where layout density and power budget are primary constraints.

Availability

W9812G6KB-6 TR is available at Aetrix Electronics and suitable for industrial HMI displays, network packet buffering, and medical imaging modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for W9812G6KB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, DDR/SDRAM, and TrustME secure memory products.

W9812G6KB-6 TR belongs to Winbond's legacy SDR SDRAM product line, designed specifically for cost-sensitive, high-reliability embedded systems requiring proven synchronous DRAM functionality without DDR complexity.

FAQ

What is the maximum supported clock frequency for W9812G6KB-6 TR?

The W9812G6KB-6 TR is rated for a maximum clock frequency of 166 MHz, corresponding to a 6 ns clock period. This speed grade is validated under recommended DC operating conditions (VDD = 3.3 V ± 0.3 V) and case temperatures from 0°C to 70°C. Exceeding this frequency may result in setup/hold violations or data corruption.

Does W9812G6KB-6 TR support self-refresh mode, and what is its typical current draw?

Yes, W9812G6KB-6 TR supports self-refresh mode with a typical current draw of 2 mA at 0°C to 70°C ambient. Self-refresh is entered via the Self Refresh Command (CS/RAS/CAS/CKE low, WE high) and maintains data retention without external refresh commands. Operation above 85°C case temperature disables self-refresh per datasheet specification.

How does the W9812G6KB-6 TR handle byte-level write masking?

W9812G6KB-6 TR uses LDQM and UDQM pins to enable independent masking of the lower (DQ0–DQ7) and upper (DQ8–DQ15) 8-bit lanes during write operations. When either DQM signal is sampled high at the rising edge of CLK coincident with a WRITE command, that byte lane is blocked with zero latency-no read-modify-write sequence is required.

What package type and ball count does W9812G6KB-6 TR use?

W9812G6KB-6 TR uses a TFBGA-54 package measuring 8 mm × 8 mm with 0.8 mm ball pitch. It contains 54 solder balls, including 16 data I/Os (DQ0–DQ15), 12 address/control lines (A0–A11, BS0, BS1), 7 power/ground (VDD, VDDQ, VSS, VSSQ), and 9 command/timing signals (/CS, /RAS, /CAS, /WE, CLK, CKE, LDQM, UDQM, NC).

Can W9812G6KB-6 TR be used in place of a DDR SDRAM?

No, W9812G6KB-6 TR is an SDR SDRAM (single data rate), not DDR. It transfers one word per clock cycle on the rising edge only, lacks differential strobes (DQS), and uses different command encoding and timing parameters than DDR/DDR2/DDR3. Substitution would require full controller firmware and PCB layout redesign.