Winbond Electronics Corporation W9812G6KH-5I TR

Overview

W9812G6KH-5I TR from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V supply, and TSOP II-54 package. It delivers 200M words/s bandwidth and supports self-refresh, auto-precharge, and burst lengths of 1/2/4/8/full page for high-performance main memory in industrial embedded systems.

For engineers reviewing the W9812G6KH-5I TR datasheet, W9812G6KH-5I TR pinout, W9812G6KH-5I TR application, or W9812G6KH-5I TR equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), LVTTL interface compatibility, 4K refresh cycles/64 ms, programmable mode register, and TSOP II-54 mechanical footprint.

Technical Context

This SDRAM implements four independent 2M-word banks with interleaved access to hide precharge latency. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute bank activate, read/write, precharge, auto-precharge, self-refresh, and power-down operations.

The device uses multiplexed address pins (A0–A11) for row/column addressing, dual DQM masking (LDQM/UDQM) for byte-level write control, and separate VDDQ/VSSQ rails to isolate I/O noise. Mode register programming configures burst type (sequential/interleave), length, and CAS latency-critical for timing alignment in DDR-capable controllers.

Key Specifications

Pinout & Package

W9812G6KH-5I TR uses a 54-pin Thin Small Outline Package (TSOP II), 400 mil width, with lead-free and RoHS-compliant construction. Pin 1 is located at bottom-left corner when notch faces up; pin numbering proceeds counterclockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-5BLI and MT48LC16M16A2P-6A:L, W9812G6KH-5I TR delivers higher 200 MHz bandwidth at same industrial temp grade and lower 2 mA self-refresh current - making it optimal for thermally constrained, high-throughput embedded memory subsystems.

Availability

W9812G6KH-5I TR is available at Aetrix Electronics and suitable for industrial HMI, network packet buffering, medical imaging acquisition, factory automation PLCs, and embedded vision systems requiring stable component supply across long production lifecycles.

Supply support for W9812G6KH-5I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash memory, and microcontrollers, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.

The W9812G6KH series belongs to Winbond's industrial-grade SDRAM product line, designed specifically for cost-sensitive, high-reliability embedded applications where extended temperature operation and long-term supply stability are mandatory.

FAQ

What is the maximum clock frequency supported by W9812G6KH-5I TR?

W9812G6KH-5I TR supports a maximum clock frequency of 200 MHz, compliant with the 200 MHz/CL3 specification. This rating is guaranteed across the full industrial temperature range of –40°C to +85°C, with all AC timing parameters met under 3.3 V ± 0.3 V supply conditions. The -5I speed grade is explicitly sorted and tested to this performance level.

Does W9812G6KH-5I TR support self-refresh mode, and what are its operational limits?

Yes, W9812G6KH-5I TR supports self-refresh mode, entered via the Self Refresh Command (CS/RAS/CAS/WE = L/L/L/H with CKE = L). It is fully functional within –40°C to +85°C, consuming only 2 mA typical current. Self-refresh is not supported above +85°C per datasheet specification, and the device must be held in idle state before entry.

How many banks does W9812G6KH-5I TR have, and how does bank interleaving improve performance?

W9812G6KH-5I TR has four independent memory banks. Bank interleaving allows concurrent activation and access across banks - for example, while Bank 0 is precharging, Bank 1 can be reading - effectively hiding tRP and tRC delays. This enables sustained burst throughput exceeding single-bank theoretical limits, especially critical in video and packet-processing applications.

What is the purpose of LDQM and UDQM pins on W9812G6KH-5I TR?

LDQM (Lower Data Mask) and UDQM (Upper Data Mask) provide byte-level write masking for the 16-bit DQ bus. When asserted high during a write cycle, LDQM blocks writes to DQ0–DQ7, and UDQM blocks writes to DQ8–DQ15 - enabling precise 8-bit updates without read-modify-write sequences. During reads, they place corresponding DQ pins in high-impedance state.

Can W9812G6KH-5I TR be used as a drop-in replacement for other 128 Mbit SDRAMs like IS42S16100E?

No, W9812G6KH-5I TR is not a drop-in replacement for IS42S16100E despite matching density and package. Differences in AC timing (e.g., tRCD, tRP), mode register encoding, and power-up initialization sequence require controller firmware validation. Pin compatibility exists, but electrical and functional behavior must be verified per JEDEC-standard SDRAM initialization flow.