Winbond Electronics Corporation W9812G6KH-5 TR

Overview

W9812G6KH-5 TR from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V supply, and TSOP II-54 package. It delivers up to 200M words/second bandwidth and supports burst lengths of 1–8 and full-page, enabling high-throughput memory access in embedded controllers and industrial displays.

For engineers reviewing the W9812G6KH-5 TR datasheet, W9812G6KH-5 TR pinout, W9812G6KH-5 TR application, or W9812G6KH-5 TR equivalent, key selection considerations include CL3 timing compliance at 200 MHz, TSOP II-54 mechanical compatibility, self-refresh support at ≤85°C, and LVTTL interface requirements for legacy SDRAM controller integration.

Technical Context

This SDRAM implements four independent 2M-word banks with interleaved activation to hide precharge latency. Its command decoder synchronizes all operations-including Bank Activate, Read/Write, Auto-precharge, and Self Refresh-to the rising edge of CLK, requiring strict tRCD ≥ 20 ns and tRP ≥ 20 ns for reliable operation at 200 MHz.

The Mode Register enables runtime configuration of burst type (sequential/interleave), burst length (1–8/full), and CAS latency (2 or 3). Internal refresh counter executes 4K cycles per 64 ms at 0–70°C, while LDQM/UDQM provide per-byte write masking and output tri-state control during read bursts.

Key Specifications

Pinout & Package

W9812G6KH-5 TR uses a 54-pin TSOP II (400 mil) package with dedicated power/ground separation: VDD/VSS for core logic and VDDQ/VSSQ for I/O buffers. Pin 1 is DQ0; pins 36 and 40 are NC; pins 1, 14, 27 are VDD; pins 28, 41, 54 are VSS; pins 3, 9, 43, 49 are VDDQ; pins 6, 12, 46, 52 are VSSQ.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-5BLI and MT48LC16M16A2P-6A:L, W9812G6KH-5 TR offers optimal balance of 200 MHz performance, TSOP II-54 drop-in compatibility, and commercial-temperature cost efficiency for legacy SDRAM controller platforms.

Availability

W9812G6KH-5 TR is available at Aetrix Electronics and suitable for industrial HMI displays, legacy embedded PCs, network packet buffers, and medical imaging modules requiring stable component supply across multi-year production cycles.

Supply support for W9812G6KH-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory, flash, and logic ICs, with over 30 years of DRAM design heritage.

W9812G6KH-5 TR belongs to Winbond's legacy SDRAM product line, engineered for cost-sensitive, long-lifecycle embedded systems requiring JEDEC-compliant 3.3V SDRAM with proven reliability and broad controller compatibility.

FAQ

What is the maximum operating frequency and CAS latency of the W9812G6KH-5 TR?

The W9812G6KH-5 TR operates at a maximum clock frequency of 200 MHz with a fixed CAS latency of 3. This means the device requires exactly three clock cycles between the issuance of a column address strobe (CAS) and the appearance of the first valid read data on DQ pins. The -5 speed grade is specifically sorted and tested to meet this timing specification under commercial temperature conditions (0°C to 70°C), ensuring deterministic performance in timing-critical SDRAM interfaces.

Does the W9812G6KH-5 TR support self-refresh mode, and what are its limitations?

Yes, the W9812G6KH-5 TR supports self-refresh mode, which maintains data integrity using an internal refresh counter while external clocks are suspended. However, self-refresh is only guaranteed functional within the commercial temperature range (0°C to 70°C); the datasheet explicitly states it is not supported above 85°C. During self-refresh, CKE must be held low, and the device exits the mode only after CKE returns high and tXSR delay elapses before accepting new commands.

What package type and pin count does the W9812G6KH-5 TR use?

The W9812G6KH-5 TR uses a 54-pin TSOP II (Thin Small Outline Package, Type II) with 400 mil body width. It features RoHS-compliant lead-free terminations and separates core power (VDD/VSS) from I/O power (VDDQ/VSSQ) to reduce noise coupling. Pin 1 is DQ0, and pins 36 and 40 are no-connect (NC) terminals - critical for correct PCB layout and signal routing in legacy SDRAM designs.

How does the W9812G6KH-5 TR handle burst read interruptions, and what role do DQM pins play?

The W9812G6KH-5 TR allows burst reads to be interrupted by subsequent read or write commands. During a read-to-read interruption, the new address overrides the remaining burst sequence, and output data transitions after the new CAS latency. For read-to-write interruption, LDQM and UDQM must be asserted high before the write command to place corresponding DQ byte lanes in high-impedance state - preventing bus contention while preserving data integrity on unmasked lanes.

What are the refresh requirements for reliable operation of the W9812G6KH-5 TR?

The W9812G6KH-5 TR requires 4,096 refresh cycles every 64 ms at operating temperatures from 0°C to 70°C. This equates to one refresh command approximately every 15.6 µs. Refresh may be performed as distributed auto-refresh commands or as a burst of 4K commands - the latter is required just before entering and immediately after exiting self-refresh mode. Failure to meet this refresh interval results in irreversible data loss from charge leakage in memory cells.