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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W9812G6KH-6I

Name: W9812G6KH-6I
Brand: Winbond Electronics Corporation
SKU: W9812G6KH-6I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W9812G6KH-6I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 54-TSOP (0.400", 10.16mm Width)

Datasheet:: W9812G6KH-6I.pdf

Description:: IC DRAM 128MBIT LVTTL 54TSOP II

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Product details

Overview

W9812G6KH-6I from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V LVTTL interface, and industrial temperature range (–40°C to +85°C). It delivers 332 MB/s peak bandwidth and supports burst lengths of 1/2/4/8/full page for high-throughput memory buffering in embedded controllers and display subsystems.

For engineers reviewing the W9812G6KH-6I datasheet, W9812G6KH-6I pinout, W9812G6KH-6I application, or W9812G6KH-6I equivalent, key selection criteria include its TSOP II-54 package, programmable mode register (burst type/length, CL), auto-precharge capability, self-refresh support at ≤85°C, and compatibility with standard SDRAM controllers requiring 16-bit data width and 4-bank architecture.

Technical Context

This SDRAM implements a fully synchronous interface synchronized to CLK rising edges, with command decoding controlled by CS/RAS/CAS/WE combinations. Its four independent banks enable interleaved access to hide precharge delays, while the internal column counter automates sequential burst addressing in both sequential and interleave modes.

Power management includes Power Down Mode (CKE-driven), Clock Suspend Mode (CKE low during active bank), and Self Refresh Mode (CKE low with all control inputs latched), with refresh cycles mandated at 4K/64 ms over –40°C to +85°C. The mode register configures burst length, CAS latency, and burst type-critical for timing alignment with host controller clock domains.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	2,097,152 words × 4 banks × 16 bits = 67,108,864 bits (8 MB)
Max Clock Frequency	166 MHz - defines maximum bus throughput and minimum tCK (6.0 ns)
CAS Latency	CL = 3 - fixed read access latency of 3 clock cycles after column address strobe
Burst Length	Programmable 1, 2, 4, 8, or full-page - determines consecutive data words per read/write command
Supply Voltage	3.3 V ± 0.3 V - requires dedicated LVTTL-compatible power rail with separate VDDQ/VSSQ for I/O noise isolation
Operating Temperature	–40°C to +85°C - validated for industrial-grade reliability without derating
Refresh Requirement	4K cycles / 64 ms - mandates host controller or external refresh controller to issue CBR commands at this interval

Pinout & Package

Package: TSOP II-54, 400 mil, RoHS-compliant lead-free construction with separate VDD/VDDQ and VSS/VSSQ power/ground pairs for signal integrity.

Pin/Terminal	Circuit Role	Design Meaning
A0–A11	Address Input	Multiplexed row/column address lines; A0–A11 for row, A0–A8 for column
BS0, BS1	Bank Select	Selects one of four internal banks during ACTIVATE or READ/WRITE command
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; LDQM/UDQM control byte masking for partial writes
CS, RAS, CAS, WE	Command Control	Four-input command decoder; logic levels at CLK rising edge define operation (e.g., ACTIVATE, READ, WRITE)
CLK, CKE	Clock Interface	CLK synchronizes all inputs; CKE enables/disables internal clock domain (Power Down/Self Refresh entry)
LDQM, UDQM	I/O Mask	High-Z output control (read) or write blocking (write) with zero latency for DQ0–7 (LDQM) and DQ8–15 (UDQM)

Key Features

Feature	Design Value
Programmable Mode Register	Enables runtime configuration of burst length, CAS latency, and sequential/interleave addressing - critical for optimizing bandwidth vs. latency trade-offs in real-time systems
Auto-precharge Support	A10-high on READ/WRITE triggers automatic bank precharge - eliminates explicit PRECHARGE command overhead and reduces command bus contention
Interleaved Bank Architecture	Four independent banks allow pipelined access across pages - hides tRP and tRCD delays to sustain >90% bus utilization under burst-heavy workloads
Self Refresh Mode	Internal refresh controller maintains data retention with CKE low - enables low-power suspend states in portable or fanless industrial devices
LVTTL-Compatible Interface	3.3V signaling with separate VDDQ/VSSQ rails - ensures clean signal integrity for 166 MHz operation on cost-sensitive PCB layouts

Applications

Industrial HMI Display Buffer	Network Router Packet Buffer
Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with ambient temperatures up to 85°C. IC Role / Device Role / Timing Role: Primary SDRAM for graphics controller; provides 16-bit wide, burst-4/8 reads aligned to pixel clock timing. Use Value: 166 MHz clock and CL3 latency ensure sub-100 ns pixel fetch response; TSOP II package allows compact layout near display SoC.	Use Scenario: Temporary storage of Ethernet frames in Layer 3 switches handling 1 Gbps traffic with deterministic latency requirements. IC Role / Device Role / Timing Role: Shared packet buffer accessed by multiple MAC engines; uses interleaved bank reads to sustain line-rate forwarding. Use Value: Four-bank architecture enables concurrent read/write operations across banks, reducing average access latency by 40% vs. single-bank DRAM.
Medical Imaging Data Acquisition	Automated Test Equipment Memory Cache
Use Scenario: Capturing raw sensor data streams from ultrasound transducers at 50 MSPS before FPGA-based compression. IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer interfaced to FPGA via SDRAM controller IP; configured for burst-8 writes. Use Value: 332 MB/s peak bandwidth matches ADC output rate; industrial temp rating ensures stability during extended thermal soak tests.	Use Scenario: Storing test pattern sequences and measurement results in benchtop ATE systems requiring deterministic memory access timing. IC Role / Device Role / Timing Role: Local cache for pattern generator engine; uses auto-precharge to minimize command overhead between vector bursts. Use Value: Programmable mode register allows tuning burst length and CL to match pattern clock domain, eliminating setup/hold violations.

Industrial HMI Display Buffer

Network Router Packet Buffer

Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with ambient temperatures up to 85°C.

IC Role / Device Role / Timing Role: Primary SDRAM for graphics controller; provides 16-bit wide, burst-4/8 reads aligned to pixel clock timing.

Use Value: 166 MHz clock and CL3 latency ensure sub-100 ns pixel fetch response; TSOP II package allows compact layout near display SoC.

Use Scenario: Temporary storage of Ethernet frames in Layer 3 switches handling 1 Gbps traffic with deterministic latency requirements.

IC Role / Device Role / Timing Role: Shared packet buffer accessed by multiple MAC engines; uses interleaved bank reads to sustain line-rate forwarding.

Use Value: Four-bank architecture enables concurrent read/write operations across banks, reducing average access latency by 40% vs. single-bank DRAM.

Medical Imaging Data Acquisition

Automated Test Equipment Memory Cache

Use Scenario: Capturing raw sensor data streams from ultrasound transducers at 50 MSPS before FPGA-based compression.

IC Role / Device Role / Timing Role: High-bandwidth acquisition buffer interfaced to FPGA via SDRAM controller IP; configured for burst-8 writes.

Use Value: 332 MB/s peak bandwidth matches ADC output rate; industrial temp rating ensures stability during extended thermal soak tests.

Use Scenario: Storing test pattern sequences and measurement results in benchtop ATE systems requiring deterministic memory access timing.

IC Role / Device Role / Timing Role: Local cache for pattern generator engine; uses auto-precharge to minimize command overhead between vector bursts.

Use Value: Programmable mode register allows tuning burst length and CL to match pattern clock domain, eliminating setup/hold violations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS42S16100E-6BLI	Same 2M×4×16 organization, 166 MHz, CL3, TSOP-54; differs in refresh timing (4K/64 ms same), but supports CL2 at 143 MHz	Validated in automotive infotainment reference designs; wider voltage tolerance (3.3V ± 0.5V)	Prefer when board-level voltage regulation is marginal or automotive qualification is required
MT48LC16M16A2P-6A:L	Identical speed grade (-6A), same pinout and electrical specs; differs in manufacturer-specific AC timing margins (tRCD/tRP tighter by 0.5 ns)	Used in legacy telecom baseband cards; longer production lifecycle visibility	Choose for drop-in replacement where existing layout uses Micron's footprint and timing margin analysis confirms compatibility

Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A:L, the W9812G6KH-6I offers identical functional and pinout compatibility but with Winbond's industrial temperature validation and documented self-refresh behavior at 85°C - making it preferable for thermally constrained embedded systems where sustained refresh reliability is critical.

Availability

W9812G6KH-6I is available at Aetrix Electronics and suitable for industrial HMI, network infrastructure, medical imaging, and automated test equipment requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W9812G6KH-6I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and ISO/TS 16949-certified manufacturing.

The W9812G6KH series belongs to Winbond's industrial-grade SDRAM product line, engineered for reliable operation in harsh environments where extended temperature range, long-term supply stability, and proven interoperability with FPGA and ASIC memory controllers are mandatory.

FAQ

What is the maximum data bandwidth achievable with the W9812G6KH-6I?

The W9812G6KH-6I achieves a peak data bandwidth of 332 MB/s, calculated as 166 MHz × 16 bits ÷ 8 bits/byte. This assumes continuous burst-8 reads with no command overhead and full bus utilization. Real-world throughput depends on host controller efficiency, bank interleaving, and refresh scheduling - typical sustained bandwidth in embedded applications ranges from 220–280 MB/s.

Does the W9812G6KH-6I support CAS Latency 2?

No, the W9812G6KH-6I is specified only for CAS Latency 3 at 166 MHz. While the datasheet notes CL2 support for higher-speed grades (e.g., -5/-5I at 200 MHz), the -6I speed grade is explicitly rated for CL3 operation. Attempting CL2 timing violates tAC and tCAC specifications and risks read data corruption.

Can the W9812G6KH-6I operate reliably above 85°C?

No - the W9812G6KH-6I is qualified for operation from –40°C to +85°C. Self-refresh functionality is disabled above 85°C per datasheet Note in Section 2, and refresh timing parameters (4K/64 ms) are only guaranteed within this range. For 105°C operation, the W9812G6KH-6J variant must be used.

What is the purpose of separate VDDQ and VSSQ pins on the W9812G6KH-6I?

VDDQ and VSSQ provide dedicated power and ground for the 16-bit DQ I/O buffers, isolating them from core logic (VDD/VSS). This separation reduces switching noise coupling into data lines, ensuring signal integrity at 166 MHz and enabling stable eye diagrams for high-speed SDRAM interfaces - especially critical in dense PCB layouts with shared power planes.

How does auto-precharge function in the W9812G6KH-6I, and when is it triggered?

Auto-precharge in the W9812G6KH-6I is activated when A10 is driven high during a READ or WRITE command. It initiates automatic bank precharge after the burst completes (for reads) or two clocks after the final write (for writes). This eliminates the need for a separate PRECHARGE command, reducing command bus load and improving memory controller efficiency in burst-intensive applications.

W9812G6KH-6I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 54-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM

Memory Size:: 128Mbit

Memory Organization:: 8M x 16

Memory Interface:: LVTTL

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 54-TSOP II

W9812G6KH-6I FAQ

1.How can I place an order for W9812G6KH-6I through Aetrix?

Please submit a Request for Quotation (RFQ) for W9812G6KH-6I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9812G6KH-6I reliable?

The price and inventory of W9812G6KH-6I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9812G6KH-6I is usually 5 days.

3.What payment methods are accepted for W9812G6KH-6I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9812G6KH-6I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9812G6KH-6I?

W9812G6KH-6I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9812G6KH-6I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9812G6KH-6I?

For technical support, including W9812G6KH-6I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9812G6KH-6I requirements.

6.How does Aetrix verify that W9812G6KH-6I is sourced from the original manufacturer or authorized distributors?

All W9812G6KH-6I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9812G6KH-6I meets industry standards.

7.What is the process for return or replacement of W9812G6KH-6I?

All W9812G6KH-6I units undergo pre-shipment inspection (PSI). If there is an issue with W9812G6KH-6I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9812G6KH-6I part is unused and in its original packaging.

Return procedure for W9812G6KH-6I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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