Winbond Electronics Corporation W9812G6KH-6I TR

Overview

W9812G6KH-6I TR from Winbond is a 2M × 4 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V LVTTL interface, and industrial temperature range (–40°C to +85°C). It delivers up to 332 MB/s peak bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and legacy PC-compatible systems.

For engineers reviewing the W9812G6KH-6I TR datasheet, W9812G6KH-6I TR pinout, W9812G6KH-6I TR application, or W9812G6KH-6I TR equivalent, key selection criteria include its TSOP II-54 package, programmable mode register (burst type/length, CL), auto-precharge capability, self-refresh support at ≤85°C, and compatibility with standard SDRAM controllers requiring 2M×16 organization and 166 MHz timing.

Technical Context

This SDRAM implements four independent 512-row × 4096-column banks, enabling bank interleaving to hide precharge latency. Its command decoder interprets RAS/CAS/WE/CS combinations on CLK rising edges to execute activate, read, write, precharge, auto-precharge, burst stop, self-refresh, and power-down operations.

It features dual I/O power domains (VDDQ/VSSQ) for noise isolation, LDQM/UDQM per-byte masking, and a mode register that configures burst length (1–8/full page), burst type (sequential/interleaved), and CAS latency (2 or 3). Refresh is managed via 4K cycles per 64 ms at –40°C to +85°C.

Key Specifications

Pinout & Package

W9812G6KH-6I TR is housed in a RoHS-compliant, lead-free TSOP II-54 package (400 mil width), with 54 pins arranged in two rows. Pin functions follow JEDEC-standard SDRAM layout, including multiplexed address/data control, dedicated DQM masking, and separated VDD/VDDQ and VSS/VSSQ rails.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with W9812G6KH-6I TR, IS42S16100E-6BLI offers marginally faster cycle time but demands tighter power delivery, while MT48LC16M16A2P-6A:L provides identical timing compliance with stricter supply specs - both require verification of mode register initialization sequences and burst termination behavior in target firmware.

Availability

W9812G6KH-6I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, legacy PC-based data acquisition systems, and network edge router buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W9812G6KH-6I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM and Flash manufacturing experience and global foundry partnerships.

W9812G6KH-6I TR belongs to Winbond's legacy SDRAM product line designed for cost-sensitive, industrial-grade applications where JEDEC-compatibility, thermal robustness, and long-term supply stability are prioritized over cutting-edge bandwidth.

FAQ

What is the maximum data bandwidth achievable with W9812G6KH-6I TR?

W9812G6KH-6I TR achieves a peak data bandwidth of 332 MB/s, calculated as 166 MHz × 16 bits ÷ 8 bits/byte. This assumes continuous burst-8 reads with no command overhead or bank conflicts. Real-world sustained throughput depends on controller efficiency, bank interleaving, and refresh scheduling - typically 260–300 MB/s in optimized embedded implementations using W9812G6KH-6I TR.

Does W9812G6KH-6I TR support CAS Latency 2 operation?

Yes, W9812G6KH-6I TR supports both CAS Latency 2 and CAS Latency 3, as confirmed in its official datasheet Section 2 (Features). The selected CL value is programmed into the mode register during initialization. However, the -6I speed grade is characterized and guaranteed only for CL3 operation at 166 MHz; CL2 use requires system-level timing validation and may not be supported across the full industrial temperature range.

Can W9812G6KH-6I TR operate in self-refresh mode at 105°C?

No. W9812G6KH-6I TR explicitly disables self-refresh functionality above 85°C, as stated in the Features section: "Not support self refresh function with TA > 85°C". At 105°C, the device must rely on external auto-refresh commands issued by the memory controller every 64 ms. This limitation applies strictly to W9812G6KH-6I TR and is not overridden by its -6J counterpart's higher temperature rating.

What is the purpose of the A10/AP pin on W9812G6KH-6I TR?

The A10 pin on W9812G6KH-6I TR serves dual function: as address bit A10 during normal row/column addressing, and as the Auto-precharge enable signal when asserted high during read/write command registration. When A10 = HIGH at the rising edge of CLK with CS/CAS/WE asserted, the SDRAM automatically initiates precharge after burst completion - eliminating the need for a separate precharge command in W9812G6KH-6I TR designs.

Is W9812G6KH-6I TR compatible with standard SDRAM controllers designed for 2M×16 devices?

Yes, W9812G6KH-6I TR is fully JEDEC-compliant for 2M × 4 banks × 16-bit SDRAMs and interoperates with industry-standard controllers (e.g., NXP i.MX28, Microchip PIC32MZ, Intel 810/820 chipsets). Its command encoding, timing parameters (tRCD, tRP, tRC), and mode register layout match JEDEC specification JESD21C, ensuring drop-in compatibility - provided the controller supports CL3 at 166 MHz and the TSOP II-54 pinout alignment.