Winbond Electronics Corporation W9816G6IB-6

Overview

W9816G6IB-6 from Winbond is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V ±0.3V supply, and VFBGA-60 packaging. It delivers up to 166M words/second bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for embedded main memory in industrial controllers and legacy display subsystems.

For engineers reviewing the W9816G6IB-6 datasheet, W9816G6IB-6 pinout, W9816G6IB-6 application, or W9816G6IB-6 equivalent, key selection criteria include its -6 speed grade timing compliance (tRCD = 20 ns, tRP = 20 ns), LVTTL interface compatibility, self-refresh current ≤2 mA, and support for auto-precharge and interleaved bank access in resource-constrained systems.

Technical Context

This SDRAM implements a dual-bank architecture with independent row activation and column access, enabling bank interleaving to hide precharge latency. Its programmable Mode Register configures burst length (1–8, full page), burst type (sequential/interleaved), and CAS latency (2 or 3).

It supports standard SDRAM command protocol including ACTIVE, READ/WRITE, AUTO-PRECHARGE, PRECHARGE ALL, SELF-REFRESH, and POWER DOWN modes. Timing is fully synchronous to CLK with CKE-controlled clock enable, and DQ masking via LDQM/UDQM enables byte-level write control without external logic.

Key Specifications

Pinout & Package

VFBGA-60 package (6.4 mm × 10.1 mm, 0.65 mm ball pitch, Ø0.4 mm balls), RoHS-compliant, lead-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16100E-6BLI and MT48LC16M16A2P-6A, W9816G6IB-6 offers superior thermal packaging (VFBGA-60), tighter tRC (50 ns), and lower self-refresh current (2 mA), making it optimal for space-constrained, thermally demanding, or battery-backed industrial applications where long-term availability and RoHS compliance are mandatory.

Availability

W9816G6IB-6 is available at Aetrix Electronics and suitable for industrial HMI displays, legacy set-top box upgrades, medical data loggers, automotive instrument clusters, and embedded control systems requiring stable component supply across extended product lifecycles.

Supply support for W9816G6IB-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory and microcontrollers, with over 30 years of DRAM design heritage and global manufacturing scale.

W9816G6IB-6 belongs to Winbond's legacy SDR SDRAM product line, engineered for cost-effective, pin-compatible replacement of aging memory in industrial and consumer electronics where JEDEC-compliant 3.3 V SDRAM functionality is required without DDR complexity.

FAQ

What is the maximum operating frequency and CAS latency supported by W9816G6IB-6?

W9816G6IB-6 is rated for 166 MHz operation with CAS Latency 3 (CL3). This means the device requires a minimum clock period of 6 ns (tCK ≤ 6 ns) and outputs read data exactly three clock cycles after the CAS# signal is asserted. The -6 speed grade guarantees this timing across 0°C to 70°C ambient temperature, and CL2 is also supported but not default-optimized for this variant.

Does W9816G6IB-6 support auto-precharge, and how is it enabled?

Yes, W9816G6IB-6 supports auto-precharge. It is enabled by setting address pin A10 high during issuance of a READ or WRITE command. When active, the SDRAM automatically initiates precharge of the accessed bank before burst completion-reducing controller overhead and improving effective bandwidth. Auto-precharge is invalid for full-page burst length and requires tRAS(min) compliance between bank activate and internal precharge start.

What package type and ball count does W9816G6IB-6 use?

W9816G6IB-6 uses a VFBGA-60 package: 60-ball very thin fine-pitch ball grid array measuring 6.4 mm × 10.1 mm with 0.65 mm ball pitch and 0.4 mm solder ball diameter. It is RoHS-compliant and lead-free, designed for high-density PCB layouts and improved thermal dissipation compared to TSOP alternatives.

Can W9816G6IB-6 operate in self-refresh mode, and what is its typical current draw?

Yes, W9816G6IB-6 supports self-refresh mode entered via the SELF-REFRESH command (CS#, RAS#, CAS#, WE# all low, CKE low). In this mode, the device maintains data integrity without external refresh commands. Its maximum self-refresh current is specified as 2 mA, enabling low-power retention in battery-backed or energy-harvesting systems where continuous external refresh is impractical.

What are the key timing parameters for W9816G6IB-6 at 166 MHz operation?

At 166 MHz (tCK = 6 ns), W9816G6IB-6 requires tRCD (RAS-to-CAS delay) ≤ 20 ns, tRP (precharge time) ≤ 20 ns, tRC (row cycle time) ≤ 50 ns, and tRFC (refresh cycle time) ≤ 66 ns. These values define minimum intervals between critical commands and constrain memory controller state machine design-especially for burst chaining and bank interleaving.