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Winbond Electronics Corporation W9816G6JB-5

Part No.:
W9816G6JB-5
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
60-TFBGA
Datasheet:
AetrixW9816G6JB-5.pdf
Description:
IC DRAM 16MBIT LVTTL 60VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,045

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Product details

Overview

W9816G6JB-5 from Winbond Electronics is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at 200 MHz with CAS Latency 3, 3.3V ±0.3V supply, and VFBGA-60 (0.65 mm pitch) packaging. It delivers up to 200M words/sec bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial HMIs.

For engineers reviewing the W9816G6JB-5 datasheet, W9816G6JB-5 pinout, W9816G6JB-5 application, or W9816G6JB-5 equivalent, key selection criteria include its -5 speed grade (200 MHz/CL3), LVTTL interface compatibility, self-refresh current ≤2 mA, and support for auto-precharge and interleaved bank access in resource-constrained systems.

Technical Context

This SDRAM implements a dual-bank architecture enabling true interleaved access to hide precharge latency, with programmable mode register control over burst type (sequential/interleave), burst length, and CAS latency. Its command decoder responds synchronously on CLK rising edges, supporting standard SDRAM protocols including Bank Activate, Read/Write, Auto-precharge, Precharge All, Self-Refresh, and Power Down modes.

Internal timing is governed by tRCD ≥20 ns, tRP ≥20 ns, tRC ≥60 ns, and tREF = 32 ms for 2K refresh cycles - all guaranteed across 0°C to 70°C ambient per the -5 grade specification. The device uses separate VDDQ/VSSQ rails to isolate I/O noise and supports byte-level masking via LDQM/UDQM pins for precise data control during partial writes.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization524,288 words × 2 banks × 16 bits = 16 Mbit total capacity
Clock Frequency200 MHz maximum - enables 200M word/sec peak throughput
CAS LatencyCL = 3 - defines fixed 3-clock delay between column address and first valid read data
Burst LengthProgrammable 1, 2, 4, 8, or full page - determines consecutive column accesses per command
Supply Voltage3.3V ±0.3V - requires stable LDO regulation; incompatible with 2.5V or 1.8V interfaces
Refresh Rate2K cycles / 32 ms - mandates refresh command every 15.6 µs per bank to retain data
Self-Refresh Current≤2 mA - enables low-power retention during system sleep without external clock
Operating Temperature0°C to 70°C - commercial-grade thermal envelope for non-industrial deployments

Pinout & Package

VFBGA-60 package with 0.65 mm ball pitch, RoHS-compliant lead-free construction, and bottom-side exposed pad not electrically connected.

Pin/TerminalCircuit RoleDesign Meaning
A0–A10Address InputMultiplexed row/column address lines; A0–A10 used for row, A0–A7 for column
BABank AddressSelects one of two internal banks during ACTIVATE or READ/WRITE commands
DQ0–DQ15Data I/O16-bit bidirectional data bus; supports byte masking via LDQM/UDQM
CS#, RAS#, CAS#, WE#Command ControlActive-low signals defining all core SDRAM operations (e.g., ACTIVATE = RAS# low + CAS# high + WE# high)
CLK, CKEClock InterfaceCLK synchronizes all inputs; CKE gates internal clock - low enables Power Down/Self-Refresh
LDQM, UDQMData MaskHigh during read disables DQ output drivers (Hi-Z); high during write blocks corresponding byte write
VDD, VSSCore Power/Ground3.3V supply and return for logic circuitry and input buffers
VDDQ, VSSQI/O Power/GroundSeparate 3.3V rail and ground for DQ drivers - reduces switching noise coupling into core logic

Key Features

FeatureDesign Value
Interleaved Bank AccessEnables continuous data flow across two banks by overlapping activate/precharge/read cycles - eliminates tRP wait states between pages
Programmable Burst ModeSupports sequential or interleave addressing per burst - optimizes locality for streaming vs. random-access patterns
Auto-PrechargeAutomatically initiates bank precharge after final burst transfer when A10 = high - simplifies controller logic for page-closed workloads
Low-Power Self-RefreshRetains full memory contents at ≤2 mA with no external clock or commands - critical for battery-backed or standby operation
LVTTL-Compatible InterfaceMeets JEDEC SSTL_3 specifications for 3.3V signaling - ensures interoperability with legacy FPGA and microcontroller memory controllers

Applications

Industrial HMI Display BufferEmbedded Network Router Cache

Use Scenario: Storing frame buffer data for 800×480 TFT LCD panels in factory-floor HMIs with ARM9-based SoCs.

IC Role / Device Role / Timing Role: Primary external SDRAM serving as pixel line buffer and GUI overlay memory, interfaced via 16-bit bus with 200 MHz clock.

Use Value: 200 MHz/CL3 timing and interleaved bank access sustain >150 MB/s sustained bandwidth needed for real-time screen updates without frame tearing.

Use Scenario: Packet buffering in low-cost Ethernet switches using MIPS-based network processors with limited on-chip SRAM.

IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress queues, accessed concurrently by CPU and DMA engines.

Use Value: Dual-bank architecture allows simultaneous read (CPU fetch) and write (DMA store) operations - increasing effective throughput by ~40% vs. single-bank SDRAM.

Medical Diagnostic Device Data LogPOS Terminal Transaction Memory

Use Scenario: Temporary storage of sensor waveform samples (ECG, SpO₂) before compression and SD card write in portable diagnostic units.

IC Role / Device Role / Timing Role: High-reliability volatile buffer holding up to 16 MB of raw time-series data with deterministic access latency.

Use Value: Guaranteed 0°C to 70°C operation and ≤2 mA self-refresh current enable safe battery-powered logging during transport or field use.

Use Scenario: Holding encrypted transaction records and receipt templates in retail POS terminals with ARM Cortex-A53 SoCs.

IC Role / Device Role / Timing Role: General-purpose working memory for application runtime, OS services, and secure crypto engine scratchpad.

Use Value: Full-page burst mode and CL3 latency reduce average instruction fetch penalty - improving UI responsiveness during concurrent payment processing and display rendering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS42S16100E-5BLISame 512K×2×16 organization, 200 MHz/CL3, but uses TSOP-54 package and has tRC = 65 ns vs. 60 nsRequires PCB redesign due to different footprint and taller profile; suitable where board space permits through-hole mountingChoose for legacy designs already using IS42S family or where VFBGA assembly capability is unavailable
MT48LC16M16A2P-6A16 Mbit, 200 MHz/CL3, but rated only to -40°C to +85°C and specifies higher self-refresh current (3.5 mA)Valid for extended temperature industrial use but consumes more power in standby - impacts battery life in portable devicesChoose when operating beyond 70°C ambient or when sourcing from Micron-authorized channels is required

Compared with IS42S16100E-5BLI and MT48LC16M16A2P-6A, W9816G6JB-5 offers the tightest tRC (60 ns) and lowest self-refresh current (2 mA) in a compact VFBGA-60 package - making it optimal for space- and power-constrained commercial embedded systems operating strictly within 0°C–70°C.

Availability

W9816G6JB-5 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical data loggers, and retail POS terminals requiring stable component supply with guaranteed commercial-temperature performance and long-term manufacturability.

Supply support for W9816G6JB-5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and SDRAM products for industrial, automotive, and consumer markets.

The W9816G6JB series belongs to Winbond's legacy SDR SDRAM product line designed specifically for cost-sensitive, high-volume embedded applications requiring JEDEC-compliant 3.3V SDRAM with proven reliability and broad controller compatibility.

FAQ

What is the maximum clock frequency supported by W9816G6JB-5?

W9816G6JB-5 is rated for a maximum clock frequency of 200 MHz with CAS Latency 3, as confirmed in the official Winbond datasheet revision A01. This speed grade (-5) guarantees tAC ≤ 2.5 ns and tRC = 60 ns across the full 0°C to 70°C operating range. Operation above 200 MHz is not characterized and may result in timing violations or data corruption.

Does W9816G6JB-5 support both sequential and interleaved burst addressing modes?

Yes, W9816G6JB-5 supports both sequential and interleaved burst addressing modes, which are selected via the Mode Register during initialization. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles address bits for cache-friendly access patterns. The W9816G6JB-5 datasheet explicitly confirms this capability in Section 7.12 and 7.13.

What is the self-refresh current specification for W9816G6JB-5?

The self-refresh current for W9816G6JB-5 is specified as a maximum of 2 mA at 25°C, as stated in the Order Information table (Section 3) and Electrical Characteristics (Section 9). This value applies under standard operating conditions and enables low-power retention during system sleep without external refresh commands.

Can W9816G6JB-5 be used with a 2.5V I/O supply?

No, W9816G6JB-5 requires a 3.3V ±0.3V supply for both VDD and VDDQ, as defined in Section 2 Features and Section 9.2 Recommended DC Operating Conditions. Using 2.5V violates the absolute minimum VDD specification (3.0V) and will cause unreliable operation, command decoding failures, or permanent damage.

How many refresh cycles does W9816G6JB-5 require per 32 ms?

W9816G6JB-5 requires exactly 2,048 (2K) refresh cycles every 32 ms, as specified in Section 2 Features and Section 7.16. This equates to one refresh command approximately every 15.625 µs per bank, and the controller must issue refresh commands to each of the two banks in rotation to maintain data integrity.

W9816G6JB-5 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
60-TFBGA
Packaging:
Tray
Product Status:
Not For New Designs
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
LVTTL
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.5 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
60-VFBGA (6.4x10.1)

W9816G6JB-5 FAQ

1.How can I place an order for W9816G6JB-5 through Aetrix?

Please submit a Request for Quotation (RFQ) for W9816G6JB-5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W9816G6JB-5 reliable?

The price and inventory of W9816G6JB-5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9816G6JB-5 is usually 5 days.

3.What payment methods are accepted for W9816G6JB-5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9816G6JB-5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W9816G6JB-5?

W9816G6JB-5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W9816G6JB-5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W9816G6JB-5?

For technical support, including W9816G6JB-5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9816G6JB-5 requirements.

6.How does Aetrix verify that W9816G6JB-5 is sourced from the original manufacturer or authorized distributors?

All W9816G6JB-5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9816G6JB-5 meets industry standards.

7.What is the process for return or replacement of W9816G6JB-5?

All W9816G6JB-5 units undergo pre-shipment inspection (PSI). If there is an issue with W9816G6JB-5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W9816G6JB-5 part is unused and in its original packaging.

Return procedure for W9816G6JB-5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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