Winbond Electronics Corporation W9816G6JB-5 TR

Overview

W9816G6JB-5 TR from Winbond Electronics is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at up to 200 MHz with CAS Latency 3, supporting LVTTL interface and burst lengths of 1/2/4/8/full page, used as main memory in embedded controllers and industrial display systems.

For engineers reviewing the W9816G6JB-5 TR datasheet, W9816G6JB-5 TR pinout, W9816G6JB-5 TR application, or W9816G6JB-5 TR equivalent, key selection criteria include clock frequency grade (-5 = 200 MHz), VFBGA-60 package compatibility, self-refresh current (2 mA max), and support for auto-precharge and interleaved bank access in resource-constrained designs.

Technical Context

This SDRAM implements a dual-bank architecture with programmable mode register control over burst type (sequential/interleave), burst length, and CAS latency. It uses multiplexed address pins (A0–A10) and bank address (BA) to manage row/column access across two independent 512K-word banks.

Timing compliance includes tRCD ≥ 20 ns, tRP ≥ 20 ns, and tRC ≥ 60 ns at 200 MHz; it supports power-down mode (CKE-controlled), self-refresh (with CKE low), and clock suspend-enabling dynamic power management in battery-sensitive or thermally constrained applications.

Key Specifications

Pinout & Package

VFBGA-60 package with 0.65 mm ball pitch, RoHS-compliant lead-free construction. Ball grid arranged in 7×7 array with corner balls omitted; mechanical dimensions per JEDEC MO-240AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with W9816G6JB-5 TR, IS42S16100E-5BLI offers identical electrical timing but demands PCB redesign for TSOP-54, while MT48LC16M16A2P-6A:G trades 1 mA higher self-refresh current for industrial temperature range-making W9816G6JB-5 TR optimal for cost-sensitive commercial-grade embedded systems with strict height and power budgets.

Availability

W9816G6JB-5 TR is available at Aetrix Electronics and suitable for industrial HMI display buffers, embedded network router memory, and medical diagnostic imaging modules requiring stable component supply across multi-year production cycles.

Supply support for W9816G6JB-5 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including SPI NOR Flash, PSRAM, and SDRAM for embedded and industrial markets.

The W9816G6JB series targets cost-optimized, high-reliability SDRAM applications in commercial-grade industrial control, human-machine interfaces, and multimedia edge devices where density, speed, and power efficiency intersect.

FAQ

What is the maximum clock frequency supported by the W9816G6JB-5 TR?

The W9816G6JB-5 TR supports a maximum clock frequency of 200 MHz with CAS Latency 3. This speed grade is confirmed in the device's order information table and validated across AC characteristics including tAC (access time), tRCD (RAS-to-CAS delay), and tRC (RAS cycle time). Operation above 200 MHz is not guaranteed and may violate setup/hold timing margins specified in the datasheet.

Does the W9816G6JB-5 TR support both sequential and interleaved burst modes?

Yes, the W9816G6JB-5 TR supports both sequential and interleaved burst addressing modes, configured via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles address bits for cache-friendly access patterns. The burst type is selected during Mode Register Set command and applies to all subsequent burst operations until reprogrammed.

What is the self-refresh current specification for the W9816G6JB-5 TR?

The W9816G6JB-5 TR has a maximum self-refresh current of 2 mA at 25°C, as specified in the Order Information table and Electrical Characteristics section. This value is measured under standard conditions (VDD = 3.3 V, TA = 25°C) and remains stable across the commercial temperature range (0°C to 70°C), enabling predictable power budgeting in low-power standby modes.

Can the W9816G6JB-5 TR be used with a 2.7 V supply?

No, the W9816G6JB-5 TR is rated for 3.3 V ± 0.3 V operation only, per its −5 speed grade specification. While later grades (−7/−7I) support 2.7 V–3.6 V, the −5 variant requires minimum 3.0 V and maximum 3.6 V on both VDD and VDDQ. Using 2.7 V will violate recommended DC operating conditions and may cause initialization failure or data corruption.

How many banks does the W9816G6JB-5 TR have, and how are they controlled?

The W9816G6JB-5 TR contains two internal banks (Bank #0 and Bank #1), selected using the BA (Bank Address) input pin. Each bank operates independently, allowing interleaved access-e.g., activating Bank #0 while Bank #1 is precharging-to hide tRP latency. Bank activation, precharge, and read/write commands all require explicit BA assertion to target the correct bank.