Winbond Electronics Corporation W9816G6JB-6 TR
- Part No.:
- W9816G6JB-6 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 60-TFBGA
- Datasheet:
-
W9816G6JB-6 TR.pdf
- Description:
- IC DRAM 16MBIT 60-VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W9816G6JB-6 TR from Winbond is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at 166 MHz with CAS Latency 3, 3.3V ±0.3V supply, and VFBGA-60 (0.65 mm pitch) packaging. It delivers 332 MB/s peak bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for high-throughput memory buffering in embedded controllers and industrial display systems.
For engineers reviewing the W9816G6JB-6 TR datasheet, W9816G6JB-6 TR pinout, W9816G6JB-6 TR application, or W9816G6JB-6 TR equivalent, key selection considerations include its -6 speed grade timing compliance (tRCD = 20 ns, tRP = 20 ns), dual-bank interleaving capability, LVTTL interface compatibility, and industrial-grade thermal margin when paired with -6I variants.
Technical Context
This SDRAM implements fully synchronous operation synchronized to the rising edge of CLK, with command decoding controlled by CS#, RAS#, CAS#, and WE# inputs. Its internal architecture features two independent 512K-word banks, a programmable Mode Register for burst length and latency configuration, and dedicated VDDQ/VSSQ rails for I/O noise isolation.
It supports auto-precharge (via A10 high), self-refresh (CKE low + CS#/RAS#/CAS# low), and power-down modes to reduce active and standby current. Burst addressing operates in sequential or interleave mode, and DQ masking is managed via LDQM/UDQM with zero-latency write blocking and 2-cycle read tri-state activation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 524,288 words × 2 banks × 16 bits = 16 Mbit total capacity; enables efficient page-mode access across two independently activated banks. |
| Max Clock Frequency | 166 MHz (–6 grade); defines maximum system bus speed and determines tCK = 6 ns timing constraint for all AC parameters. |
| CAS Latency | CL = 3 cycles; fixes minimum delay between column address strobe and first valid data output on DQ pins. |
| Burst Length | 1, 2, 4, 8, or full page; configurable via Mode Register to match controller burst requirements and optimize bandwidth utilization. |
| Supply Voltage | 3.3V ±0.3V (VDD/VDDQ); requires single regulated rail; separates core logic (VDD/VSS) from I/O drivers (VDDQ/VSSQ) for signal integrity. |
| Refresh Rate | 2K cycles / 32 ms (64 ms refresh interval); mandates periodic refresh commands to retain data; compatible with standard SDRAM controllers. |
| Operating Temperature | 0°C to +70°C; validated for commercial-grade applications including network edge devices and human-machine interfaces. |
| Package | VFBGA-60, 0.65 mm ball pitch, RoHS-compliant lead-free; surface-mount footprint optimized for compact PCB layouts with high I/O density. |
Pinout & Package
VFBGA-60 package with 0.65 mm ball pitch, RoHS-compliant lead-free construction. Ball layout supports standard SDRAM command/address/data routing and separate I/O power/ground domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Input (multiplexed) | Row/column address lines shared across banks; A0–A10 used for row; A0–A7 used for column during latch. |
| BA | Bank Address | Selects one of two internal banks during ACTIVATE, READ, or WRITE; enables bank interleaving to hide precharge latency. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; supports byte masking via LDQM/UDQM for partial writes without read-modify-write overhead. |
| CS#, RAS#, CAS#, WE# | Command Control | Active-low command inputs decoded synchronously on CLK rising edge; define all operations including refresh, precharge, and burst control. |
| CLK, CKE | Clock Interface | CLK provides synchronous timing reference; CKE enables/disables clock domain - low entry triggers Power Down or Self Refresh. |
| LDQM / UDQM | Data Mask | Low-active masks lower/upper 8 bits of DQ bus; enables byte-select writes and prevents read bus contention during interrupt sequences. |
| VDD / VSS | Core Power / Ground | 3.3V supply and return for internal logic and command decoder; must be decoupled near package per datasheet guidelines. |
| VDDQ / VSSQ | I/O Power / Ground | Separate 3.3V supply and return for DQ drivers/receivers; reduces switching noise coupling into core logic. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable Mode Register | Configures burst length, CAS latency, and burst type (sequential/interleave) dynamically - enabling runtime optimization for varying data access patterns. |
| Dual-Bank Architecture | Enables true bank interleaving: while one bank is precharging, the other can accept new ACTIVATE/READ/WRITE commands - reducing effective access latency. |
| Auto-Precharge Support | Automatically initiates bank precharge after burst completion when A10 = high; eliminates need for explicit PRECHARGE command and simplifies controller firmware. |
| LVTTL-Compatible Interface | Meets JEDEC-standard voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and timing - ensures plug-and-play interoperability with FPGA, ASIC, and microcontroller SDRAM controllers. |
| Self-Refresh Mode | Retains data with CKE held low and external clocks halted; draws only 2 mA typical - ideal for low-power suspend states in portable or battery-backed systems. |
| Power-Down Mode | Reduces active power by gating internal receivers (except CKE); requires exit sequence with NOP before resuming operation - useful for short idle periods. |
Applications
| Industrial HMI Display Buffer | Network Edge Router Packet Buffer |
|---|---|
|
Use Scenario: Storing frame buffers and GUI assets for 720p LCD panels in factory-floor HMIs with ambient temperature up to 70°C. IC Role / Device Role / Timing Role: Primary SDRAM serving as double-buffered display memory, interfaced directly to ARM Cortex-A5/A7 SoC SDRAM controller. Use Value: 166 MHz clock rate and CL3 timing deliver sufficient bandwidth for 60 Hz refresh with alpha-blended overlays; VFBGA-60 footprint fits tight board space constraints. |
Use Scenario: Temporary storage of Ethernet packets in Layer 3 switches handling 100 Mbps line-rate traffic with bursty ingress/egress patterns. IC Role / Device Role / Timing Role: Shared packet buffer supporting concurrent read/write access across two banks to sustain back-to-back forwarding decisions. Use Value: Dual-bank interleaving hides tRP/tRC delays, enabling sustained 332 MB/s throughput; auto-precharge minimizes command overhead during rapid packet dequeue. |
| Medical Imaging Front-End Controller | POS Terminal Secure Boot Memory |
|
Use Scenario: Capturing and staging real-time ultrasound scan line data prior to DSP processing in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-reliability frame buffer with deterministic latency; operated in sequential burst mode for predictable transfer timing. Use Value: CL3 and tRCD = 20 ns guarantee worst-case access predictability; 2K/32 ms refresh satisfies medical-grade data retention requirements over extended operation. |
Use Scenario: Loading and verifying encrypted firmware images during cold boot in PCI-compliant point-of-sale terminals with tamper-resistant enclosures. IC Role / Device Role / Timing Role: Non-volatile boot memory supplement - holds decrypted image segments under secure processor control before execution. Use Value: Low-power self-refresh (2 mA max) maintains image integrity during secure boot sequence pauses; LVTTL interface ensures compatibility with legacy secure MCU buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS42S16100E-6BLI | Same 512K×2×16 organization, 166 MHz, CL3, but uses TSOP-54 package and supports 2.5V–3.6V VDD range. | Preferred where board-level rework or hand-soldering is required; lacks VFBGA thermal performance for high-density layouts. | Select IS42S16100E-6BLI only if TSOP-54 mechanical compatibility or wider voltage tolerance is mandatory. |
| MT48LC16M16A2P-6A:G | Identical speed grade and organization, but requires 3.3V ±0.3V and specifies tighter tRCD = 18 ns; offered in TSOP-54 and BGA-60 variants. | Better suited for designs requiring margin against timing skew or operating near thermal limits; G-grade indicates green RoHS compliance. | Choose MT48LC16M16A2P-6A:G when tighter AC specs or alternate qualification (JEDEC JESD22) are required for automotive-adjacent use cases. |
Compared with W9816G6JB-6 TR, IS42S16100E-6BLI trades VFBGA miniaturization for TSOP manufacturability, while MT48LC16M16A2P-6A:G offers tighter timing margins at equivalent speed - making W9816G6JB-6 TR optimal for cost-sensitive, space-constrained commercial embedded systems requiring proven reliability at 166 MHz.
Availability
W9816G6JB-6 TR is available at Aetrix Electronics and suitable for industrial HMI display buffering, network packet buffering, medical imaging front-end controllers, and POS terminal secure boot memory requiring stable component supply across multi-year production cycles.
Supply support for W9816G6JB-6 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and SDRAM products for industrial, communications, and consumer markets.
The W9816G6JB series belongs to Winbond's legacy SDR SDRAM product line designed for cost-effective, pin-compatible memory expansion in resource-constrained embedded systems requiring JEDEC-compliant synchronous DRAM functionality.
FAQ
What is the maximum operating frequency supported by W9816G6JB-6 TR?
W9816G6JB-6 TR supports a maximum clock frequency of 166 MHz, corresponding to a 6 ns clock period (tCK). This speed grade is validated under commercial temperature conditions (0°C to +70°C) with CAS Latency 3 and meets all specified AC timing parameters including tRCD = 20 ns and tRP = 20 ns as defined in the official Winbond datasheet revision A01.
Does W9816G6JB-6 TR support both sequential and interleaved burst modes?
Yes, W9816G6JB-6 TR supports both sequential and interleaved burst addressing modes, selectable via the Mode Register. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles specific address bits (A0–A2 depending on burst length) to enable cache-friendly access patterns - both modes are fully functional at 166 MHz with CL3 timing.
What package type and ball count does W9816G6JB-6 TR use?
W9816G6JB-6 TR uses a VFBGA-60 package with 0.65 mm ball pitch and RoHS-compliant lead-free finish. The 60-ball layout includes dedicated VDDQ/VSSQ rails, dual DQM signals (LDQM/UDQM), and standard SDRAM command/address/data assignments verified in the official Winbond ball description table.
Can W9816G6JB-6 TR operate with a 2.5V supply voltage?
No, W9816G6JB-6 TR requires a 3.3V ±0.3V supply (VDD and VDDQ) as specified for the -6 speed grade. Operation below 3.0V or above 3.6V violates recommended DC operating conditions and may result in timing violations, data corruption, or premature device failure - unlike -7/-7I grades which support 2.7V–3.6V.
How many refresh cycles are required per 32 ms for W9816G6JB-6 TR?
W9816G6JB-6 TR requires 2,048 (2K) refresh cycles every 32 ms, equivalent to one refresh command every 15.625 µs on average. This aligns with JEDEC SDRAM standards and ensures data retention across the full commercial temperature range; refresh commands may be issued to individual banks or all banks simultaneously.
W9816G6JB-6 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 60-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- -
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-VFBGA (6.4x10.1)
W9816G6JB-6 TR FAQ
1.How can I place an order for W9816G6JB-6 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W9816G6JB-6 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W9816G6JB-6 TR reliable?
The price and inventory of W9816G6JB-6 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W9816G6JB-6 TR is usually 5 days.
3.What payment methods are accepted for W9816G6JB-6 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W9816G6JB-6 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W9816G6JB-6 TR?
W9816G6JB-6 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W9816G6JB-6 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W9816G6JB-6 TR?
For technical support, including W9816G6JB-6 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W9816G6JB-6 TR requirements.
6.How does Aetrix verify that W9816G6JB-6 TR is sourced from the original manufacturer or authorized distributors?
All W9816G6JB-6 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W9816G6JB-6 TR meets industry standards.
7.What is the process for return or replacement of W9816G6JB-6 TR?
All W9816G6JB-6 TR units undergo pre-shipment inspection (PSI). If there is an issue with W9816G6JB-6 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W9816G6JB-6 TR part is unused and in its original packaging.
Return procedure for W9816G6JB-6 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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