Winbond Electronics Corporation W9816G6JB-7I

Overview

W9816G6JB-7I from Winbond is a 512K × 2 banks × 16-bit synchronous DRAM (SDRAM) operating at 143 MHz with CAS Latency 3, supporting industrial temperature range (–40°C to +85°C), LVTTL interface, and VFBGA-60 package. It delivers up to 286 Mwords/s bandwidth and supports burst lengths of 1, 2, 4, 8, or full page for embedded main memory in resource-constrained controllers and display subsystems.

For engineers reviewing the W9816G6JB-7I datasheet, W9816G6JB-7I pinout, W9816G6JB-7I application, or W9816G6JB-7I equivalent, key selection criteria include industrial-grade thermal reliability, programmable burst mode, auto-precharge timing compliance, and VFBGA-60 ball mapping for PCB layout verification.

Technical Context

This SDRAM implements dual-bank interleaving to hide precharge latency and uses a programmable Mode Register to configure burst length (1–8, full page), burst type (sequential/interleaved), and CAS latency (2 or 3). Its command decoder responds to standard LVTTL-level inputs (CS#, RAS#, CAS#, WE#) synchronized to CLK rising edges, with CKE enabling/disabling clock domain operation.

It supports self-refresh (2 mA max), power-down mode, clock suspend, and auto-refresh cycles (2K/32 ms). Data masking is implemented via separate LDQM and UDQM pins for byte-level write control, and I/O power is isolated (VDDQ/VSSQ) to minimize switching noise on core logic supplies (VDD/VSS).

Key Specifications

Pinout & Package

VFBGA-60 package with 0.65 mm pitch, RoHS-compliant, lead-free construction. Ball grid arranged in 7×7 array with corner balls omitted (60 functional balls).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SDRAM applications.

Compared with IS42S16160J-7BLI and MT48LC16M16A2P-75IT, W9816G6JB-7I uniquely combines industrial temperature rating, VFBGA-60 compactness, and 2.7–3.6 V supply flexibility-making it optimal for new designs where density, thermal resilience, and supply margin are critical.

Availability

W9816G6JB-7I is available at Aetrix Electronics and suitable for industrial HMI, automotive infotainment, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W9816G6JB-7I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, flash memory, and logic products, with over 30 years of DRAM design heritage.

The W9816G6JB series targets cost-sensitive, space-constrained embedded systems requiring industrial-grade SDRAM with LVTTL compatibility and flexible power supply operation.

FAQ

What is the maximum supported clock frequency for W9816G6JB-7I?

The W9816G6JB-7I is rated for a maximum clock frequency of 143 MHz at CAS Latency 3. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and under 2.7–3.6 V supply conditions. Operation beyond this frequency violates timing parameters including tAC, tRCD, and tRP, risking data corruption or initialization failure. The W9816G6JB-7I datasheet specifies AC characteristics only up to 143 MHz, and no higher-speed binning is defined for this speed grade.

Does W9816G6JB-7I support both sequential and interleaved burst addressing modes?

Yes, W9816G6JB-7I supports both sequential and interleaved burst addressing modes. The mode is selected via bit M3 in the Mode Register during the Mode Register Set command. Sequential mode increments column addresses linearly (e.g., n, n+1, n+2), while interleaved mode toggles specific address bits (A0, A1, A2 depending on burst length) to enable faster access across cache-line boundaries. Both modes are fully functional at all supported burst lengths (1, 2, 4, 8, full page) and CL2/CL3 settings.

What is the purpose of separate VDDQ and VSSQ pins on W9816G6JB-7I?

W9816G6JB-7I uses dedicated VDDQ and VSSQ pins to isolate the I/O buffer power domain from the core logic supply (VDD/VSS). This separation reduces switching noise coupling from the 16-bit DQ bus into sensitive internal circuitry, improving signal integrity and timing margin-especially critical at 143 MHz operation. VDDQ must be supplied within the same 2.7–3.6 V range as VDD, and VSSQ must be connected to the same ground plane as VSS but routed separately to minimize shared-impedance noise.

Can W9816G6JB-7I operate with a 2.7 V supply voltage?

Yes, W9816G6JB-7I is explicitly rated for 2.7 V to 3.6 V operation on both VDD and VDDQ supplies, unlike earlier speed grades (–5/–6/–6I) that require 3.0–3.6 V. This wider voltage range allows direct integration with newer low-voltage power management ICs and extends battery life in portable industrial equipment. All AC and DC specifications-including tRC, tRCD, and CL3 timing-are guaranteed across the full 2.7–3.6 V range at –40°C to +85°C.

How does auto-precharge function in W9816G6JB-7I, and what timing constraints apply?

In W9816G6JB-7I, auto-precharge is activated by setting A10 high during a READ or WRITE command. For reads, precharge begins before burst completion (delay = CL cycles); for writes, it starts two clocks after final data (tWR = 2 cycles). The bank cannot be reactivated until both tWR and tRP elapse (tDAL = tWR + tRP = 55 ns min). Auto-precharge is prohibited with full-page burst length and cannot be interrupted-ensuring deterministic timing for real-time systems relying on predictable memory latency.